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MMG3006NT1 NXP Semiconductors 400MHz - 2400MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER visit Digikey

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MMG3006NT1 Datasheet

Part Manufacturer Description PDF Type
MMG3006NT1 Freescale Semiconductor Heterojunction Bipolar Transistor Technology (InGaP HBT) Original
MMG3006NT1 Freescale Semiconductor Heterojunction Bipolar Transistor Technology (InGaP HBT) Original

MMG3006NT1

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 0, 1/2008 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a , Semiconductor MMG3006NT1 1 Table 4. Electrical Characteristics (VDC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm , temperature should not exceed 150°C. MMG3006NT1 2 RF Device Data Freescale Semiconductor Table 5 Freescale Semiconductor
Original
Abstract: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 2, 3/2008 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a , MMG3006NT1 1 Table 4. Electrical Characteristics (VDC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in , exceed 150°C. MMG3006NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Freescale Semiconductor
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ECUV1H150JCV FR408 06035J6R8BS C101 C0603C104J5RAC C0603C103J5RAC
Abstract: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 3, 5/2010 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a , rights reserved. RF Device Data Freescale Semiconductor MMG3006NT1 1 Table 4. Electrical , reliable operation, the junction temperature should not exceed 150°C. MMG3006NT1 2 RF Device Data Freescale Semiconductor
Original
1008CS-150XJB 020 gp 1500 4x4 erj8geyj101 CRCW06030000FKEA AVX Manufacture Label AN1955
Abstract: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a , Data Freescale Semiconductor MMG3006NT1 1 Table 4. Electrical Characteristics (VDC = 5 Vdc, 900 , junction temperature should not exceed 150"C. MMG3006NT1 2 RF Device Data Freescale Semiconductor Freescale Semiconductor
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Abstract: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3006NT1 is a , Reel. MMG3006NT1 400-2400 MHz, 17.5 dB 33 dBm InGaP HBT CASE 1898-01 QFN 4x4 PLASTIC Table , - AN1955. © Freescale Semiconductor, Inc., 2008, 2010-2011. All rights reserved. MMG3006NT1 1 , °C. MMG3006NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Name VBA RFin Freescale Semiconductor
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Abstract: MRF5S9070NR1(18a) MRFE6P3300HR3(18i)! MRF6VP3450H(46a) 1000-3800 MHz MMG3005NT1(18f) MMG3006NT1(18f)! Freescale Semiconductor
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power transistors table MW6S010NR1 MHW6342TN mrfe6s9060n Motorola Microwave power Transistor
Abstract: MMG3005NT1 MMG3006NT1 Frequency Band MHz Supply Voltage (Typ) Volts Supply Current (Typ) mA Freescale Semiconductor
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MRF8P9040N MRF1513NT1 s2p rf Amplifier mhz Doherty 470-860 MRF8S21100H MRF8S21100HS MRF8S9220HR3
Abstract: MMG3001NT1 (18f) MMG3002NT1 (18f) MMG3003NT1 (18f) MMG3004NT1 (46b) MMG3005NT1(46b) MMG3006NT1(46c Freescale Semiconductor
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SG187 MC9S12XDP384 MPX7007 MPC8548 DSP56F803BU80E DSPA56371AF150 SG1000CRQ32005 EIA-724 SG1001Q32005 SG1002Q32005 SG1003Q22005