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Part : MMBA811C8T1 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 1,200 Best Price : - Price Each : -
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MMBA811C8 Datasheet

Part Manufacturer Description PDF Type
MMBA811C8 Motorola PNP silicon amplifier transistor. Scan
MMBA811C8 Samsung Electronics PNP (DRIVER TRANSISTOR) Scan
MMBA811C8L Motorola SOT-23 General Purpose Transistors Scan

MMBA811C8

Catalog Datasheet MFG & Type PDF Document Tags

MMBA811C6

Abstract: MMBA812M5 C6; MMBA811C7 = C7; MMBA811C8 = C8 ELECTRICAL CHARACTERISTICS |Ta = 25°C unless otherwise noted , MMBA811C8 Collector-Emitter Saturation Voltage (Iq = 20 mAdc, Ig = 2.0 mAdc) Base-Emitter On Voltage dp =
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OCR Scan
BSS79B BSS79C MMBC1622D6 MMBA811C6 MMBA812M5 fr5 transistor MMBA812M6 417 TRANSISTOR MMBC1622D7 MPS3904

2N3904

Abstract: MMBA812M7 MMBA811C5 MMBA811C6 MMBA811C7 MMBA811C8 MMBT200 MMBT2907 KST2907 TMPT4403 MMBT4403 KST4403
Taitron Components
Original
BC848A BC848B BC848C BC818-16 BC818-25 BC818-40 2N3904 MMBA812M7 2N3906 kst2222 MMBA812M3 TMPT3904

LM8550

Abstract: KTD2026 NEC KRC114S MMBA811C8 Motorola KTA1504S MPSA64 Motorola MPSA64 DTC144WE Rohm
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LM8550 KTD2026 2SC2320 equivalent 2sc2240 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A

MMBD2103

Abstract: ZENER DIODE t2d MMBT2907AL 2F 60 50 â'" 500 200 MMBA811C8L C8 45 450 900 5 50 BC807-16L 5A 45 100 250 100 200 BC807-25L 5B
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MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

MMBD2104

Abstract: Transistor NEC 05F ic MMBA811C8L CASE 318-03, STYLE 6 SOT-23 (TO-236AB) PD PD ·FR-5 = 1.0 x 0.75 x 0.062 in , ; MMBA811C7L = C7¡ MMBA811C8L = C8 AMPLIFIER TRANSISTORS PNP SILICON Refer to 2N5086 fo r graphs , Reference Only) (Ic = 0.5 mAdc, Vce " 3.0 Vdc) hFE 150 135 MMBA811C5L MMBA811C6L MMBA811C7L MMBA811C8L v CE
SMD Code Book
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Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor T2D DIODE 3w NDS358N mmbf4932 BAV105 LL4148 LL4448 BB241 BB249 LL914

SMD Codes

Abstract: TRANSISTOR SMD T1P C6; MMBA811C7 = C7; MMBA811C8 = C8 ELECTRICAL CHARACTERISTICS |Ta = 25°C unless otherwise noted , MMBA811C8 Collector-Emitter Saturation Voltage (Iq = 20 mAdc, Ig = 2.0 mAdc) Base-Emitter On Voltage dp =
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Original
TRANSISTOR SMD T1P BAW92 schottky diode s6 81A smd transistor A6a a4s smd transistor Transistor SMD a7s LL4150 BB219 LL300 BA682 BA683 BA423L