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First line: MJE3055T Silicon Power Transistors MJE3055T Abstract: .. SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE3055T DESCRIPTION ·With TO-220 TO-220 package ·Complement to type MJE2955T MJE2955T ·DC current gain -hFE = 20–70 @ IC = 4 Adc .. Tags: MJE3055t MJE3055T |
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First line: UNISONIC TECHNOLOGIES CO., MJE3055T MJE3055T designed general purpose amplifier switching applications. Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. MJE3055T NPN SILICON TRANSISTOR. www.unisonic.com.tw 1 of 2. Copyright © 2005 Unisonic Technologies Co., Ltd QW-R203-011 QW-R203-011 ,B . HIGH VOLTAGE TRANSISTOR. DESCRIPTION .. Tags: MJE3055t MJE3055T |
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First line: MJE2955T "Silicon Power Transistors" 4 npn transistor ic TO-220 TO-220 JEDEC MJE2955T MJE3055T Abstract: .. MJE2955T MJE2955T MJE3055T. COMPLEMENTARY SILICON POWER TRANSISTORS. â– STMicroelectronics PREFERRED. SALESTYPES â– COMPLEMENTARY PNP - NPN DEVICES. DESCRIPTION. The MJE3055T is a silicon Epitaxial-Base .. Tags: TO-220 JEDEC TO-220 4 npn transistor ic "Silicon Power Transistors" STMicroelectronics POWER SWITCHING MJE3055t MJE2955T MJE2955T MJE3055T |
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First line: MJE3055TG UNISONIC TECHNOLOGIES CO., MJE3055T MJE3055T designed general purpose amplifier switching applications. Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. MJE3055T NPN SILICON TRANSISTOR. www.unisonic.com.tw 1 of 2. Copyright © 2009 Unisonic Technologies Co., Ltd QW-R203-011 QW-R203-011 .C. HIGH VOLTAGE TRANSISTOR. Ñ DESCRIPTION .. Tags: MJE3055TG MJE3055t mje3055* MJE3055T |
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First line: MJE3055T Abstract: .. UTC MJE3055T NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R203-011 QW-R203-011 ,A HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of .. Tags: MJE3055t MJE3055T |
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First line: l5 transistor PNP MJE2955T MJE3055T SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY DEVICES Abstract: .. MJE2955T MJE2955T MJE3055T. COMPLEMENTARY SILICON POWER TRANSISTORS. â– SGS-THOMSON PREFERRED SALESTYPES. â– COMPLEMENTARY PNP - NPN DEVICES. DESCRIPTION. The MJE3055T is a silicon epitaxial-base NPN transistor .. Tags: l5 transistor PNP MJE3055t MJE2955T MJE3055T |
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First line: MJE2955T MJE3055T wllllUI Cain#Bi COMPLEMENTARY SILICON atSllllwOViaUwXOr WOiPi PLASTIC POWER TRANSISTORS Adams Avenue, Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 Manufacturers World Class Discrete Semiconductors JEDEC T0-220AB CASE Abstract: .. Data Sheet MJE2955T MJE2955T PNP MJE3055T NPN wllllUI Cain#Bi COMPLEMENTARY SILICON atSllllwOViaUwXOr WOiPi PLASTIC POWER TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 .. Tags: datasheet abstract.. |
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First line: MJE3055T Abstract: .. INCHANGE Semiconductor isc Product Specification. isc Silicon NPN Power Transistor MJE3055T. DESCRIPTION. ·Collector-Emitter Breakdown Voltage- : V BR CEO = 60V Min ·High DC Current Gain .. Tags: MJE3055t MJE3055T |
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First line: MJE2955T MJE2955T, MJE3055T MJE2955T PLASTIC POWER TRANSISTOR MJE3055T PLASTIC POWER TRANSISTOR Genera^, Purpose Amplifier Switching Applications configuration base collector emitter collector 14,42 16,51 Abstract: .. MJE2955T MJE2955T , MJE3055T MJE2955T MJE2955T PNP PLASTIC POWER TRANSISTOR MJE3055T NPN PLASTIC POWER TRANSISTOR Genera^, Purpose Amplifier and Switching Applications pin configuration 1. base 2. collector .. Tags: MJE2955T datasheet abstract.. |
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First line: MJE30*T MJE2955T MJE3055T SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY DEVICES Abstract: .. MJE2955T MJE2955T MJE3055T. COMPLEMENTARY SILICON POWER TRANSISTORS. â– SGS-THOMSON PREFERRED SALESTYPES. â– COMPLEMENTARY PNP - NPN DEVICES. DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor .. Tags: MJE30*T TCA 700 v TCA 700 MJE3055t MJE2955T MJE3055T |
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First line: MJE3055T/MJE2955T Complementary, high power transistors plastic envelope, primarily audio general purpose Abstract: .. MJE3055T/MJE2955T MJE2955T SILICON EPITAXIAL PLANAR TRANSISTOR .. Tags: MJE3055t MJE3055T MJE2955T |
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First line: MJE2955T PLANAR SILICON TRANSISTOR Abstract: .. High Current Capability High Power Dissipation Complementary to MJE3055T. ABSOLUTE MAXIMUM RATING TA=25 °C °C °C °C Characteristic Symbol Rating Unit. Collector-Base Voltage Collector-Emitter .. Tags: MJE3055t MJE2955T |
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First line: MJE3055T GENERAL PURPOSE SWITCHING APPLICATIONS CURRENT GAIN SPECIFIED AMPERES High Current Gain-Bandwidth Product 2kHz (MIN)) Characteristic Symbol Rating Unit Collector Base Voltage VcbO Collector-Emitter Voltage VcEO Abstract: .. MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES †¢ High Current Gain-Bandwidth Product fT = 2kHz MIN ABSOLUTE MAXIMUM .. Tags: datasheet abstract.. |
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First line: PLASTIC POWER TRANSISTORS MJE2955T MJE3055T TO-220 Plastic Package Abstract: .. PLASTIC POWER TRANSISTORS MJE2955T MJE2955T PNP. MJE3055T NPN. TO-220 TO-220 . Plastic Package. With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications. ABSOLUTE MAXIMUM .. Tags: MJE2955T MJE3055T |
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First line: IS/ISO 9002 Lic# QSC/L- 000019.3 PLASTIC POWER TRANSISTORS Abstract: .. MJE3055T-2955TRev_1 291102E 291102E . Disclaimer. The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device s best suited for application .. Tags: datasheet abstract.. |
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First line: IS/ISO 9002 Lic# QSC/L- 000019.3 PLASTIC POWER TRANSISTORS Abstract: .. MJE3055T-2955TRev_1 291102E 291102E . Disclaimer. The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device s best suited for application .. Tags: datasheet abstract.. |
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First line: MJE3055T MJE3055T General Purpose Switching Applications Current Gain Specified =10A High Current Gain-Bandwidth Product 2MHz (Min.) Abstract: .. ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001. MJE3055T. NPN Silicon Transistor Absolute Maximum Ratings TC=25 °C unless otherwise noted. Electrical Characteristics TC .. Tags: MJE3055t MJE3055T |
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First line: PLASTIC POWER TRANSISTORS MJE2955T MJE3055T TO-220 Plastic Package Abstract: .. PLASTIC POWER TRANSISTORS MJE2955T MJE2955T PNP. MJE3055T NPN. TO-220 TO-220 . Plastic Package. With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications. ABSOLUTE MAXIMUM .. Tags: MJE3055t MJE2955T MJE3055T |
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First line: MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices designed general-purpose amplifier switching applications. Abstract: .. MJE2955T MJE2955T PNP MJE3055T NPN Preferred Device. Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications .. Tags: MJE3055TG MJE3055t MJE2955T MJE3055T |
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First line: Complementary Silicon Plastic Power Transistors designed general-purpose amplifier switching applications. MJE2955T MJE3055T Abstract: .. Total Power Dissipation @ TC = 25C Derate above 25C MJE3055T, MJE2955T MJE2955T . PD†75. 0.6. Watts. W/C. Operating and Storage Junction Temperature Range. TJ, Tstg. â€55 to +150. C. THERMAL CHARACTERISTICS. Characteristic .. Tags: MJE3055t MJE2955T MJE3055T |
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First line: .designed general-purpose amplifier switching applications Power Dissipation Current Gain vCE(sat) (Max @'c Abstract: .. A * vCE sat = 1 1 v Max > @'c = 4 0 A IB = 400 mA MAXIMUM RATINGS PNP NPN MJE2955T MJE2955T MJE3055T Characteristic Symbol Rating Unit Collector-Emitter Voltage VcEO 60 V Collector-Base Voltage vCBO 70 V Emitter .. Tags: datasheet abstract.. |
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First line: MJE2955TG* MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices designed general-purpose amplifier switching applications. Current Gain Specified High Current Gain Bandwidth Product Abstract: .. MJE2955T MJE2955T PNP MJE3055T NPN Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current .. Tags: MJE2955TG* MJE3055TG MJE3055t MJE2955T MJE3055T |
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First line: Semiconductor Complementary Silicon Plastic Power Transistors designed general-purpose amplifier switching applications. MJE2955T MJE3055T Abstract: .. Total Power Dissipation @ TC = 25C Derate above 25C MJE3055T, MJE2955T MJE2955T . PD†75. 0.6. Watts. W/C. Operating and Storage Junction Temperature Range. TJ, Tstg. â€55 to +150. C. THERMAL CHARACTERISTICS. Characteristic .. Tags: MJE3055t MJE2955T MJE3055T |
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First line: BUD48A transistor 2SA1046 BD699 buv18a BUV48I BIPOLAR TRANSISTOR INTRODUCTION BIPOLAR CROSS REFERENCE order improve overall service, SGS-THOMSON introduced system preferred transistor sales types. following cross-reference intended guide identify sales types that suitable replacements application. & Abstract: .. 2N5490 2N5490 MJE3055T MJE3055T. 2N5491 2N5491 MJE3055T MJE3055T. 2N5492 2N5492 BD707 BD707 BD707 BD707 . 2N5493 2N5493 2N6292 2N6292 2N6292 2N6292 . 2N5494 2N5494 BD705 BD705 BD707 BD707 . 2N5495 2N5495 MJE3055T MJE3055T. 2N5496 2N5496 BD709 BD709 BD709 BD709 . 2N5497 2N5497 2N6292 2N6292 2N6292 2N6292 . 2N5559 2N5559 2N5672 2N5672 .. Tags: BUV48I buv18a BD699 transistor 2SA1046 BUD48A transistor mje29 transistor mj10005 transistor bu932 transistor BDX94 transistor BDV95 transistor BD912 transistor BD901 transistor bd610 transistor BD312 transistor BD245 transistor bd170 datasheet abstract.. |
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First line: dk52 2SC4977 BUX98PI BD263 DK53 Bipolar Transistors Cross Reference INDUSTY STANDARD REPLACEMENT NEAREST PREFERRED INDUSTY STANDARD REPLACEMENT NEAREST PREFERRED 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N319 Abstract: .. 2N5979 2N5979 MJE3055T 2N5980 2N5980 MJE2955T MJE2955T 2N5981 2N5981 MJE2955T MJE2955T 2N5982 2N5982 2N6490 2N6490 2N5983 2N5983 MJE3055T 2N5984 2N5984 .. 2SC2397 2SC2397 MJE3055T 2SC2402 2SC2402 2N6547 2N6547 2SC2428 2SC2428 BUX41 BUX41 2SC2431 2SC2431 2N3055 2N3055 2SC2432 2SC2432 BDW51C BDW51C .. Tags: DK53 BD263 BUX98PI 2SC4977 dk52 weight transducer transistors BDV64B TIPL763A* TIPL763 TIP75C* TIP75 TIP74C tip74 TIP73C tip73a* TIP63 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240 2N3419 2N3420 2N3421 2N3439 2N3440 2N3445 2N3446 |
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First line: dk52 2SC4977 BD699 mje102 DK53 BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240 2N3419 2N342 Abstract: .. 2N5978 2N5978 MJE3055T 2N5979 2N5979 MJE3055T 2N5980 2N5980 MJE2955T MJE2955T 2N5981 2N5981 MJE2955T MJE2955T BIPOLAR TRANSISTORS .. 2N5984 2N5984 MJE3055T 2N5985 2N5985 TIP33C TIP33C 2N5986 2N5986 2N6490 2N6490 2N5987 2N5987 2N6490 2N6490 2N5990 2N5990 TIP33C TIP33C .. Tags: DK53 mje102 BD699 2SC4977 dk52 weight transducer upd6254cx* transistor 2sk2176 TIPL790 TIPL763A TIPL763* TIP75C* TIP74C tip74 TIP73C tip73a* 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240 2N3419 2N3420 2N3421 2N3439 2N3440 2N3445 2N3446 |
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First line: MJE3055T GENERAL PURPOSE SWITCHING APPLICATIONS CURRENT GAIN SPECIFIED AMPERES High Current Gain-Bandwidth Product 2kHz (MIN)) Abstract: .. MJE3055T NPN SILICON TRANSISTOR. GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High Current Gain-Bandwidth Product fT = 2kHz MIN ABSOLUTE MAXIMUM .. Tags: MJE3055t MJE3055T |
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First line: MJE3055T DISCETE SEMICONDUCTOS Abstract: .. MJE3055T. DISCRETE SEMICONDUCTORS. R. DC COMPONENTS CO., LTD.. TECHNICAL SPECIFICATIONS OF NPN .. Tags: MJE3055t MJE3055T |
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First line: Silicon Power Transistors MJE2955T Abstract: .. ·With TO-220 TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE = 20–70 @ IC = -4 Adc ·Collector–emitter saturation voltage - VCE sat = -1.1 Vdc Max @ IC =- 4 Adc APPLICATIONS ·Designed .. Tags: MJE3055t MJE2955T MJE2955T |
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First line: SILICON LASTIC POWER TRANSISTOR MJE3055T .designed general-purpose switching amplifier application. Abstract: .. SILICON P LASTIC POWER TRANSISTOR NPN MJE3055T 10A 75W Technical Data. ..designed for general-purpose switching and amplifier application. DC Current Gain - h FE = 20 †100 @ IC = 4Adc Collector .. Tags: MJE3055t MJE3055T |
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First line: Silicon Power Transistors MJE2955T Abstract: .. DESCRIPTION ·With TO-220 TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE = 20–70 @ IC = -4 Adc ·Collector–emitter saturation voltage - VCE sat = -1.1 Vdc Max @ IC =- 4 Adc APPLICATIONS .. Tags: MJE3055t MJE2955T |
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First line: IS/ISO 9002 IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Lic# QSC/L- 000019.2 IECQC 700000 IECQC 750100 Abstract: .. MJE2955T MJE2955T PNP PLASTIC POWER TRANSISTOR MJE3055T NPN PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS Collector-base voltage open .. Tags: MJE3055t datasheet abstract.. |
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First line: Order this document MJE2955T/D Complementary Silicon Plastic Power Transistors Abstract: .. Total Power Dissipation @ TC = 25 C Derate above 25 C MJE3055T, MJE2955T MJE2955T . PD†75. 0.6. Watts. W/ C. Operating and Storage Junction Temperature Range. TJ, Tstg. †55 to + 150. C. THERMAL CHARACTERISTICS. Characteristic .. Tags: MJE3055t MJE2955T |
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First line: 3055t MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors designed general-purpose amplifier switching applications. Abstract: .. MJE3055T MJE2955T MJE2955T . Figure - 3 Active-Region Safe Operating Area There are two limitations on the power handling ability of a. transistor: average junction temperature and second. breakdown safe .. Tags: 3055t* 3055* MJE2955T |
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First line: b0951 b0949 bu508at TO-220 Power Package Transistors (NPN) Maximum Ratings Electrical Characteristics (Ta=25*C, Unless Otherwise Specified) Type VC80 Mifl vebo P'D 'cao 'ces (ma) (PF) (MHz) (mA) BD243B BD243C BD949 bd951 bd953 bd955 Abstract: .. 1.2 1.6 1 2 4 4 500 MJE13007 MJE13007 700 #400 9 80 8 Ã ®1000 700 8 5 60 30 2 5 5 5 1 2 3 1.2 1.6 2 5 8 110 4 500 MJE3055T 70 60 5 75 10 1000 70 20 5 100 4 10 4 4 1.1 8 4 10 2 500 SJE1349 SJE1349 73 63 7 65 6 300 63 300 73 43 4 4. 1.07 3 4 10 20 500 tip110 tip110 .. Tags: bu508at b0949 b0951 datasheet abstract.. |
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First line: BU4060 045h11* TO-220 Case (Continued) type BVCBO bvceo vce(sat) (MHz) 2n6497 2n6498 2n6499 2n6530 1,000 10,000 Abstract: .. 2.0 2.8 2.0 1.0 mje2801t mje2801t mje2901t mje2901t 10 75 60 60 25 100 3.0    mje3055t mje2955t mje2955t 10 75 70 60 20 100 4.0 1.1 4.0 2.0 mje13004 mje13004 4.0 75 600 300 8.0 40 2.0 0.5 1.0 4.0 mje13005 mje13005 4.0 75 700 400 8.0 40 2.0 0 .. Tags: 045h11* BU4060 datasheet abstract.. |
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First line: b0949 bu508at TO-220 Power Package Transistors (NPN) Maximum Ratings Electrical (Ta=25'C, Unless Otherwise Specified) Type Vc80 MiTi ^ceo ^ebo '(so (MA) 8(V) 'ces (ma) (pf) (MHz) (mA) BD243B BD243C BD949 BD951 BD953 BD955 Abstract: .. .6 1 1.2 1.6 1 2 4 4 500 MJE13007 MJE13007 700 #400 9 80 8 $1000 700 8 5 60 30 2 5 5 5 1 2 3 1.2 1.6 2 5 8 110 4 500 MJE3055T 70 60 5 75 10 1000 70 20 5 100 4 10 4 4 1.1 8 4 10 2 500 SJE1349 SJE1349 73 63 7 65 6 300 63 300 73 43 4 4. 1.07 3 4 10 20 500 TIP110 TIP110 .. Tags: bu508at b0949 datasheet abstract.. |
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First line: MJE800T equivalent bu408 equivalent Optional Power Transistors TO-220 Case (Continued) TO-220 TYPE D45H11 MJE700T MJE701T MJE702T MJE703T MJE2901T MJE2955T BVCBO BVCEO 1,000 1,000 1,000 --------40 10,000 10,000 10,000 10,000 -------------100 --------1.0 TO-220FP Full (MHz) --40 -2.0 Abstract: .. MJE3055T MJE2955T MJE2955T 10 75 70 60 20 100 4.0 1.1 4.0 2.0. MJE13004 MJE13004 4.0 75 600 300 8.0 40 2.0 0.5 1.0 4.0. MJE13005 MJE13005 4.0 75 700 400 8.0 40 2.0 0.5 1.0 4.0. MJE13006 MJE13006 8.0 80 600 300 5.0 30 5.0 1.0 2.0 4.0. MJE13007 MJE13007 8.0 80 .. Tags: bu408 equivalent MJE800T equivalent MJE2801T mje13009 MJE13007A mje13007 equivalent BU807 bu806 BU407D BU406D 2N6531 MJE700T MJE701T MJE702T MJE703T MJE2901T MJE2955T |
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First line: MJE800T equivalent MJE13009 Power Transistors TO-220 Case (Continued) TO-220 TO-220FP Full Fully Isolated Standard TYPE D45H11 MJE700T MJE701T MJE702T MJE703T MJE2901T MJE2955T BVCBO BVCEO 1,000 1,000 1,000 --------20 10,000 10,000 10,000 10,000 --------------100 --------2.0 Abstract: .. MJE3055T MJE2955T MJE2955T 10 75 70 60 20 100 4.0 1.1 4.0 2.0. MJE13004 MJE13004 4.0 75 600 300 8.0 40 2.0 0.5 1.0 4.0. MJE13005 MJE13005 4.0 75 700 400 8.0 40 2.0 0.5 1.0 4.0. MJE13006 MJE13006 8.0 80 600 300 5.0 30 5.0 1.0 2.0 4.0. MJE13007 MJE13007 8.0 80 .. Tags: MJE800T equivalent MJE2801T mje13009 equivalent mje13009 mje13007 equivalent D44C11 Data D44C11 BU807 bu806 BU406D 330.150 2N6531 MJE700T MJE701T MJE702T MJE703T MJE2901T MJE2955T |
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First line: D45VH4 BD807 Baza/Base Kolektor/Collector Emitor/Emitter J0,7maks 5,2mgks Sl./Fig. Silicijevi transistorji Silicon transistors Tip/Type Uceo Ptoi pri/at Si./ min/maks (MHz) Fig. Abstract: .. 40 min 4 D45H9 D45H9 â– 50 , 40 min 4 MJE3055T MJE2955T MJE2955T ^- '-V-- -i* - 75 20/70 4 2N6387 2N6387 : 65 1k/420k 420k 5 20 D44E3 D44E3 D45E3 D45E3 80 50 1000 min 5 D45H12 D45H12 50 40 min 4 2N6388 2N6388 2N6668 2N6668 rft ''v-rv -.65 †̆ 1k/20k 5 20 D44H10 D44H10 D45H10 D45H10 .. Tags: BD807 D45VH4 datasheet abstract.. |
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First line: BC557 sot-23 2sa1015 sot-23 2SC945 SOT-23 pcr306 BC547 sot package sot-23 Components Cross Reference Industry Type Type 2N2955 2N2955 TO-3 2N3055 2N3055 TO-3 2SB1426 2SB1426 2SB507 2SB507 TO-220AB 2N3772 2N3772 TO-3 2SB564A 2SB564A 2N3773 2N3773 TO-3 2N3904 2N3904 TO-92 2SB772 2SB772 TO-126 2N3906 2 Abstract: .. MJD112 MJD112 TO-251 TO-251 MID112 MID112 TO-251 TO-251 MJE3055T MJE3055T TO-220AB TO-220AB MJD112 MJD112 TO-252 TO-252 MJD112 MJD112 TO-252 TO-252 MMBT1015 MMBT1015 DMBT1015 DMBT1015 SOT-23 SOT-23 MJD117 MJD117 TO-251 TO-251 MID117 MID117 TO-251 TO-251 MMBT1815 MMBT1815 DMBT1815 DMBT1815 SOT-23 SOT-23 MJD117 MJD117 TO-252 TO-252 .. Tags: BC547 sot package sot-23 pcr306 2SC945 SOT-23 2sa1015 sot-23 BC557 sot-23 2SC1213 2SC1623 2SC1674 2SC1815 2SC1959 2SC2001 2SC2120 2SC4242 2SC945 2SA1015 2SA1300 2SA673 2SA733 2SA812 2SA950 2SB1426 2SB507 2SB564A 2SB772 2SB857 2SD1616A 2SD227 2SD313 2SD667A 2SD879 2SD880 2SD882 2SD965 2N2955 2N3055 2N3772 2N3773 2N3904 2N3906 |
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First line: box54c transistor box54c box33c* BOX53C* BOX53C POWER TRANSISTORS BIPOLAR PLASTIC (continued) TO-220AB Package (continued) Resistive Switching (Case) lcCont VcEO (SUS) Device Type Watts Amps Volts Min/Max 25"C 2N6386 k/20k BDX53 BDX54 BD895 BD896 BD895A BD896A Abstract: .. 2.0 typ 0.5 typ 10 50 D44H7 D44H7 D45H7 D45H7 20 min 4 50 D44H8 D44H8 D45H8 D45H8 40 min 4 50 D45H9 D45H9 40 min 4 50 MJE3055T MJE2955T MJE2955T 20/70 4 75 2N6387 2N6387 1k/20k 5 20# 65 80 D44E3 D44E3 D45E3 D45E3 1000 min 5 2.0 typ 0.5 typ 10 50 D45H12 D45H12 40 min 4 50 2N6388 2N6388 .. Tags: BOX53C BOX53C* box33c* transistor box54c box54c datasheet abstract.. |
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First line: MJE2955T MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS Abstract: .. AND MJE3055T. APPLICATIONS â– GENERAL PURPOSE SWITCHING AND. AMPLIFIER. DESCRIPTION The MJD2955 MJD2955 and MJD3055 MJD3055 form. complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology .. Tags: MJE2955T M*2955 MJD2955 MJD3055 |
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First line: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS Abstract: .. AND MJE3055T. APPLICATIONS. â– GENERAL PURPOSE SWITCHING AND. AMPLIFIER. DESCRIPTION. The MJD2955 MJD2955 .. Tags: M*2955 MJD2955 MJD3055 |
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First line: MJD3055 MJD3055 General Purpose Amplifier Speed Switching Applications D-PACK Surface Mount Applications Lead Formed Surface Mount Applications Suffix) Straight Lead PACK, Suffix) Electrically Similar Popular MJE3055T Current Gain Specified High Current Gain Bandwidth Product: 2MHz (MIN), 500mA Abstract: .. Suffix Straight Lead I. PACK, “ -I “ Suffix Electrically Similar to Popular MJE3055T DC Current Gain Specified to 10A High Current Gain - Bandwidth Product: fT = 2MHz MIN , IC = 500mA 500mA . 1.Base .. Tags: MJD3055 MJE3055T |
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First line: MJD3055 MJD3055 General Purpose Amplifier Speed Switching Applications D-PAK Surface Mount Applications Lead Formed Surface Mount Applications Suffix) Straight Lead (I-PAK, Suffix) Electrically Similar Popular MJE3055T Current Gain Specified High Current Gain Bandwidth Product: 2MHz (MIN), 500mA Abstract: .. Suffix • Straight Lead I-PAK, “ -I “ Suffix • Electrically Similar to Popular MJE3055T • DC Current Gain Specified to 10A • High Current Gain - Bandwidth Product: fT = 2MHz MIN , IC = 500mA 500mA . 1.Base .. Tags: MJD3055 MJE3055T |
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First line: 9CV* TIP298 SAMSUNG SEMICONDUCTOR MJE3055T 7^4142 0007710 GENERAL PURPOSE SWITCHING APPLICATIONS CURRENT GAIN SPECIFIED AMPERES High Current Gain-Bandwidth Product 2MHz (MIN)) ABSOLUTE MAXIMUM RATINGS TO-220 Abstract: .. SAMSUNG SEMICONDUCTOR INC MJE3055T 14E D | 7^4142 0007710 0 | : T- NPN SILICON TRANSISTOR GENERAL PURPOSE AN6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Gain-Bandwidth .. Tags: TIP298 9CV* datasheet abstract.. |
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First line: Transistor MJF3055 MJF3055 (NPN), MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed general purpose amplifier switching applications. Abstract: .. Volts RMS Min • Electrically Similar to the Popular MJE3055T and MJE2955T MJE2955T • Collector−Emitter Sustaining Voltage − VCEO sus 90 Volts. • 10 Amperes Rated Collector Current • No Isolating Washers .. Tags: Transistor MJF3055 MJF2955G MJF2955* MJF3055 MJF2955 |
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First line: MJE800T equivalent MJE13009 Power Transistors TO-220 Case TO-220 TO-220FP Full Fully Isolated Standard TYPE 2N6040 2N6041 2N6042 2N6124 2N6125 2N6126 2N6132 2N6133 2N6134 2N6111 2N6109 2N6107 2N6666 2N6667 2N6668 2N6475 2N6476 2N6489 2N6490 2N6491 BVCBO BVCEO 1,000 1,000 1,000 1,000 1,000 1,000 20,0 Abstract: .. MJE3055T MJE2955T MJE2955T 10 75 70 60 20 100 4.0 1.1 4.0 2.0. MJE13004 MJE13004 4.0 75 600 300 8.0 40 2.0 0.5 1.0 4.0. MJE13005 MJE13005 4.0 75 700 400 8.0 40 2.0 0.5 1.0 4.0. MJE13006 MJE13006 8.0 80 600 300 5.0 30 5.0 1.0 2.0 4.0. MJE13007 MJE13007 8.0 80 .. Tags: MJE800T equivalent tip41c tip42c TIP41C EQUIVALENT TIP41/TIP42 tip41 TIP30C tip137 equivalent TIP135 TIP102 SE9302 MJE2801T mje13009 2N6040 2N6041 2N6042 2N6124 2N6125 2N6126 2N6132 2N6133 2N6134 2N6111 2N6109 2N6107 2N6666 2N6667 2N6668 2N6475 2N6476 2N6489 2N6490 2N6491 |
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First line: Transistor MJF3055 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data specifically designed general purpose amplifier switching applications. Abstract: .. RMS Min ∞ Electrically Similar to the Popular MJE3055T and MJE2955T MJE2955T ∞ Collectorâ€Emitter Sustaining Voltage — V CEO sus 90 Volts ∞ 10 Amperes Rated Collector Current ∞ No Isolating Washers Required .. Tags: Transistor MJF3055 datasheet abstract.. |
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Datasheets per page: 50 | 250 | 500 |