MJE172 datasheet and application note, data sheet, circuit, pdf, cross reference, pinout

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MJE172 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results

		1 - 21 of about 21 for MJE172
MJE172	Central Semiconductor	Silicon Power Transistor, TO-126	66.37 Kb, 1 Pages.

MJE172	Continental Device India Limited	Plastic Power Transistor	57.56 Kb, 2 Pages.

MJE172	Continental Device India Limited	Semiconductor Device Data Book 1996	117.09 Kb, 1 Pages.

MJE172	Fairchild Semiconductor	PNP EPITAXIAL SILICON TRANSISTOR	132.24 Kb, 3 Pages.

MJE172	Fairchild Semiconductor	PNP EPITAXIAL SILICON TRANSISTOR	226.47 Kb, 4 Pages.

MJE172	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor	48.78 Kb, 5 Pages.

MJE172	Mospec Semiconductor	POWER TRANSISTORS(3.0A,40-80V,12.5W)	227.86 Kb, 4 Pages.

MJE172	Motorola	Semiconductor Data Library Volume 3 1974	39.51 Kb, 1 Pages.

MJE172	Motorola	Semiconductor Data Library Volume 3 1974	142.78 Kb, 3 Pages.

MJE172	Motorola / Freescale Semiconductor	3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS	171.56 Kb, 4 Pages.

MJE172	National Semiconductor	PNP Power Transistors	182.41 Kb, 5 Pages.

MJE172	On Semiconductor	Complementary Plastic Silicon Power Transistors	79.31 Kb, 6 Pages.

MJE172	Samsung Electronics	PNP (LOW FREQUENCY AMPLIFIER)	193.89 Kb, 5 Pages.

MJE172	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS	52.54 Kb, 4 Pages.

MJE172	N/A	Shortform Data and Cross References (Misc Datasheets)	31.5 Kb, 1 Pages.

MJE172	N/A	Shortform Transistor Datasheet Guide	85.35 Kb, 1 Pages.

MJE172	N/A	Shortform IC and Component Datasheets (Plus Cross Reference Data)	94.55 Kb, 1 Pages.

MJE172	N/A	Semiconductor Master Cross Reference Guide	113.76 Kb, 1 Pages.

MJE172G	On Semiconductor	Bipolar Power C77 PNP 3A 80V FG	79.31 Kb, 6 Pages.

MJE172STU	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor	48.77 Kb, 5 Pages.

MJE172STU_NL	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor	48.76 Kb, 5 Pages.

	1 - 50 of about 84 for MJE172
First line: MJE170 MJE171 MJE172 RoHS Compliant Product suffix "-C" specifies halogen lead free General Purpose Transistor Abstract: .. MJE170 MJE170 / MJE171 MJE171 / MJE172 PNP General Purpose Transistor. Elektronische Bauelemente. 25-Nov-2010 25-Nov-2010 Rev. A Page 1 of 3. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed .. Tags: MJE170 MJE171 MJE172	106.3 Kb	3 Pages	Original

First line: MJE172 MJE182 Abstract: .. MJE172 MJE182 MJE182 . COMPLEMENTARY SILICON POWER TRANSISTORS. ■ SGS-THOMSON PREFERRED SALESTYPES. ■ COMPLEMENTARY PNP - NPN DEVICES. DESCRIPTION. The MJE172 PNP type and MJE182 MJE182 NPN type are silicon .. Tags: PNP POWER TRANSISTOR "SOT-32" mje182 MJE172 MJE182	52.53 Kb	4 Pages	Original

First line: MJE170/171 /172 EPITAXIAL SILICON TRANSISTOR POWER AUDIO AMPLIFIER CURRENT, HIGH SPEED SWITCHING APPLICATIONS Characteristic Symbol Rating Unit Collector-Base Voltage MJE170 VcbO MJE171 MJE172 -100 Collector-Emitter Voltage MJE170 VcEO Abstract: .. -Base Voltage : MJE170 MJE170 VcbO -60 V : MJE171 MJE171 -80 V : MJE172 -100 V Collector-Emitter Voltage : MJE170 MJE170 VcEO -40 V : MJE171 MJE171 -60 V : MJE172 -80 V Emitter-Base Voltage Iebo -7 V Collector Current DC lc -3 .. Tags: datasheet abstract..	150.81 Kb	3 Pages	OCR Scan

First line: COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS designed power amplifier current, high speed applications. FEATURES: Collector-Emitter Sustaining Voltage- vceo(SUS) (Min) MJE170.MJE180 (Min) MJE171.MJE181 (Min) MJE172.MJE182 Current Gain- hFE=30(Min) =12(Min)@ THERMAL CHARACTERISTICS Abstract: .. - vceo SUS = 40 v Min " MJE170 MJE170 .MJE180 MJE180 = 60 V Min - MJE171 MJE171 .MJE181 MJE181 = 80 V Min - MJE172.MJE182 MJE182 * DC Current Gain- hFE=30 Min @ lc = 0.5 A =12 Min @ lc= 1.5 A MAXIMUM RATINGS THERMAL CHARACTERISTICS .. Tags: datasheet abstract..	246.38 Kb	4 Pages	OCR Scan

First line: Complementary Plastic Silicon Power Transistors designed power audio amplifier current, high speed switching applications. MJE171* MJE172 MJE181* MJE182 Abstract: .. ∞ Collector‐Emitter Sustaining Voltage — VCEO sus = 60 Vdc — MJE171 MJE171 , MJE181 MJE181 = 80 Vdc — MJE172, MJE182 MJE182 . ∞ DC Current Gain — hFE = 30 Min @ IC = 0.5 Adc = 12 Min @ IC = 1.5 Adc. ∞ Current‐Gain — Bandwidth .. Tags: MJE171 MJE172 MJE181 MJE182	83.03 Kb	8 Pages	Original

First line: Silicon Power Transistors MJE170/171/172 Abstract: .. MJE172 VCB=-100V -100V ; IE=0 TC=150 �C -0.1 -0.1 μA mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 μA hFE-1 DC current gain IC=-100mA -100mA ; VCE=-1V 50 250 hFE-2 DC current gain IC=-500mA -500mA ; VCE .. Tags: MJE170 MJE170 171 172	113.89 Kb	3 Pages	Original

First line: Silicon Power Transistors MJE170/171/172 Abstract: .. MJE172 VCB=-100V -100V ; IE=0 TC=150 -0.1 -0.1 μA mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 μA hFE-1 DC current gain IC=-100mA -100mA ; VCE=-1V 50 250 hFE-2 DC current gain IC=-500mA -500mA ; VCE .. Tags: MJE170 MJE170 171 172	99.13 Kb	3 Pages	Original

First line: MJE172 MJE182 Abstract: .. MJE172 MJE182 MJE182 . COMPLEMENTARY SILICON POWER TRANSISTORS. ■ STMicroelectronics PREFERRED. SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES. DESCRIPTION. The MJE172 PNP type and MJE182 MJE182 NPN type are .. Tags: MJE172 MJE182	49.63 Kb	4 Pages	Original

First line: MJE172 MJE182 Abstract: .. MJE172 MJE182 MJE182 . COMPLEMENTARY SILICON POWER TRANSISTORS. ■ SGS-THOMSON PREFERRED SALESTYPES. ■ COMPLEMENTARY PNP - NPN DEVICES. DESCRIPTION The MJE172 PNP type and MJE182 MJE182 NPN type are silicon .. Tags: MJE172 MJE182	31.83 Kb	4 Pages	Original

First line: Complementary Plastic Silicon Power Transistors designed power audio amplifier current, high speed switching applications. MJE171* MJE172 MJE181* MJE182 Abstract: .. ∞ Collector‐Emitter Sustaining Voltage — VCEO sus = 60 Vdc — MJE171 MJE171 , MJE181 MJE181 = 80 Vdc — MJE172, MJE182 MJE182 . ∞ DC Current Gain — hFE = 30 Min @ IC = 0.5 Adc = 12 Min @ IC = 1.5 Adc. ∞ Current‐Gain — Bandwidth .. Tags: MJE171 MJE172 MJE181 MJE182	82.23 Kb	8 Pages	Original

First line: MJE182G MJE181G MJE172G MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors MJE170/180 series designed power audio amplifier current, high speed switching applications. Abstract: .. MJE170 MJE170 , MJE171 MJE171 , MJE172 PNP , MJE180 MJE180 , MJE181 MJE181 , MJE182 MJE182 NPN Preferred Device. Complementary Plastic Silicon Power Transistors The MJE170 MJE170 /180 series is designed for low power audio amplifier .. Tags: MJE172G MJE182G MJE181G MJE170 MJE171 MJE172 MJE180 MJE181 MJE182 MJE170 180	79.38 Kb	6 Pages	Original

First line: Semiconductor Corp. Adams Avenue, Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 Manufacturers World Class Discrete Semiconductors MJE170 MJE171 MJE172 MJE180 MJE181 MJE182 SILICON COMPLEMENTARY POWER TRANSISTOR JEDEC TO-126 CASE Abstract: .. Manufacturers of World Class Discrete Semiconductors MJE170 MJE170 MJE171 MJE171 MJE172 PNP MJE180 MJE180 MJE181 MJE181 MJE182 MJE182 NPN SILICON COMPLEMENTARY POWER TRANSISTOR JEDEC TO-126 TO-126 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR .. Tags: datasheet abstract..	84.86 Kb	1 Pages	OCR Scan

First line: MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors designed power audio amplifier current, high speed switching applications. Collector-Emitter Sustaining Voltage VCEO(sus) MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 Current Gain (Min) (Min) C Abstract: .. MJE170 MJE170 , MJE171 MJE171 , MJE172 PNP , MJE180 MJE180 , MJE181 MJE181 , MJE182 MJE182 NPN Preferred Device. Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low current, high .. Tags: MJE170 MJE171 MJE172 MJE180 MJE181 MJE182	83.66 Kb	6 Pages	Original

First line: 2SA1046 2N4001 diode BUV48I mje2055 BD699 BIPOLAR TRANSISTOR INTRODUCTION BIPOLAR CROSS REFERENCE order improve overall service, SGS-THOMSON introduced system preferred transistor sales types. following cross-reference intended guide identify sales types that suitable replacements application. " Abstract: .. 2N6406 2N6406 MJE171 MJE171 MJE172. 2N6407 2N6407 MJE172 MJE172. 2N6408 2N6408 MJE181 MJE181 MJE182 MJE182 . 2N6409 2N6409 MJE182 MJE182 MJE182 MJE182 . 2N6410 2N6410 MJE200 MJE200 MJE200 MJE200 . 2N6411 2N6411 MJE210 MJE210 MJE210 MJE210 . 2N6412 2N6412 MJE181 MJE181 MJE182 MJE182 . 2N6413 2N6413 MJE181 MJE181 MJE182 MJE182 . 2N6414 2N6414 MJE171 MJE171 MJE172 .. Tags: BD699 mje2055 BUV48I 2N4001 diode 2SA1046 transistor mje29 transistor mj10005 transistor bu932 transistor BDX94 transistor BDV95 transistor BD912 transistor BD901 transistor bd610 transistor BD312 transistor BD245 transistor bd170 datasheet abstract..	273.9 Kb	38 Pages	Original

First line: 2n3055 replacement 2SA1046 mje2055 dk52 DK53 Bipolar Transistors Cross Reference INDUSTY STANDARD REPLACEMENT NEAREST PREFERRED INDUSTY STANDARD REPLACEMENT NEAREST PREFERRED 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 Abstract: .. 2N6414 2N6414 MJE172 2N6415 2N6415 MJE172 2N6469 2N6469 BDW52C BDW52C 2N6470 2N6470 BDW51C BDW51C 2N6471 2N6471 BDW51C BDW51C 2N6472 2N6472 BDW51C BDW51C .. 2SA963 2SA963 MJE172 2SA966 2SA966 TIP32A TIP32A 2SA980 2SA980 BDW52C BDW52C 2SA1008 2SA1008 TIP32C TIP32C 2SA1010 2SA1010 TIP42C TIP42C 2SA1012 2SA1012 .. Tags: DK53 dk52 mje2055 2SA1046 2n3055 replacement weight transducer transistors BDV64B TIPL763A* TIPL763 TIP75C* TIP75 TIP74C tip74 TIP73C tip73a* TIP63 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240 2N3419 2N3420 2N3421 2N3439 2N3440 2N3445 2N3446	160.72 Kb	35 Pages	Original

First line: MJE102 bu808 equivalent 2sb673 BD699 DK53 BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240 2 Abstract: .. 2N6414 2N6414 MJE172 2N6415 2N6415 MJE172 2N6469 2N6469 BDW52C BDW52C 2N6470 2N6470 BDW51C BDW51C 2N6471 2N6471 BDW51C BDW51C 2N6472 2N6472 BDW51C BDW51C .. 2SA963 2SA963 MJE172 2SA966 2SA966 TIP32A TIP32A 2SA980 2SA980 BDW52C BDW52C 2SA1008 2SA1008 TIP32C TIP32C 2SA1010 2SA1010 TIP42C TIP42C 2SA1012 2SA1012 .. Tags: DK53 BD699 2sb673 bu808 equivalent MJE102 weight transducer upd6254cx* transistor 2sk2176 TIPL790 TIPL763A TIPL763* TIP75C* TIP74C tip74 TIP73C tip73a* 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240 2N3419 2N3420 2N3421 2N3439 2N3440 2N3445 2N3446	217.38 Kb	47 Pages	Original

First line: designed power audio amplifier current, high speed switching applications. Collector-Emitter Sustaining Voltage VCEO(sus) MJE171, MJE181 VCEO(sus) MJE172, MJE182 Current Gain (Min) (Min) Current-Gain Bandwidth Product (Min) mAdc Annular Construction Leakages ICBO (Max) Rated THERMAL CHARACTERISTICS Abstract: .. sus = 60 Vdc — MJE171 MJE171 , MJE181 MJE181 VCEO sus = 80 Vdc — MJE172, MJE182 MJE182 ∞ DC Current Gain — hFE = 30 Min @ IC = 0.5 Adc hFE = 12 Min @ IC = 1.5 Adc ∞ Current‐Gain — Bandwidth Product — fT = 50 MHz Min @ IC = 100 .. Tags: MJE171 MJE181 MJE172 MJE182	171.57 Kb	4 Pages	Original

First line: MJE170/171/172 POWER AUDIO AMPLIFIER CURRENT, HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage MJE170 MJE171 MJE172 Collector-Emitter Voltage MJE170 MJE171 MJE172 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) C Abstract: .. : MJE172. Collector-Emitter Voltage : MJE170 MJE170 . : MJE171 MJE171 . : MJE172. Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current DC Collector Dissipation TA=25 �C Collector .. Tags: MJE170 171 172 MJE171 MJE172	226.47 Kb	4 Pages	Original

First line: MJE170 thru MJE172 (SILICON) MJE180 thru MJE182 COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS designed power audio amplifier current, high speed switching applications. Collector-Emitter Sustaining Voltage vCEO(sus) MJE170, MJE180 MJE171, MJE18T MJE172, MJE182 Current Gain (Min) (Min) Current-Gain Abstract: .. MJE170 MJE170 thru MJE172 PNP SILICON MJE180 MJE180 thru MJE182 MJE182 NPN COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS . . . designed for low power audio amplifier and low current, high speed switching applications .. Tags: datasheet abstract..	57.99 Kb	1 Pages	OCR Scan

First line: MJE70/7/72 MJE70/7/72 Power Audio Amplifier Current, High Speed Switching Applications Abstract: .. BVCEO Collector-Emitter Breaksown Voltage : MJE170 MJE170 : MJE171 MJE171 : MJE172. IC = 10mA 10mA , IB = 0. -40 -60 -80. V V V. ICBO. Collector Cut-off Current : MJE170 MJE170 : MJE171 MJE171 : MJE172 : MJE170 MJE170 : MJE171 MJE171 : MJE172. VCB = - 60V, IB .. Tags: MJE170 171 172	47.9 Kb	5 Pages	Original

First line: MJE70/7/72 MJE70/7/72 Power Audio Amplifier Current, High Speed Switching Applications Abstract: .. BVCEO Collector-Emitter Breaksown Voltage : MJE170 MJE170 : MJE171 MJE171 : MJE172. IC = 10mA 10mA , IB = 0. -40 -60 -80. V V V. ICBO. Collector Cut-off Current : MJE170 MJE170 : MJE171 MJE171 : MJE172 : MJE170 MJE170 : MJE171 MJE171 : MJE172. VCB = - 60V, IB .. Tags: MJE170 171 172	48.77 Kb	5 Pages	Original

First line: transistor mje 170 JE170 MJE170, MJE171, W1JE172, MJE180, MJE181, MJE182 (continued) ELECTRICAL CHARACTERISTICS (Tc= unless otherwise noted) Characteristic Symbol Unit CHARACTERISTICS Collector-Emitter Sustaining Voltage vCEO(sus) mAdc, MJE170, MJE180 MJE171, MJE181 MJE172, Collector Cutoff Current Abstract: .. Vdc lc - 10 mAdc, lB = Ol MJE170 MJE170 , MJE180 MJE180 40 - MJE171 MJE171 , MJE181 MJE181 60 _ MJE172, MJE 182 80 â€” Collector Cutoff Current 'CBO /iAdc IVcb" 60 Vdc, lE = O MJE 170, MJE 180 â€” 0.1 Vqb = 80 Vdc, lE = O MJE 171, MJE .. Tags: JE170 transistor mje 170 datasheet abstract..	161.3 Kb	3 Pages	OCR Scan

First line: MJE70, MJE7, MJE72 MJE80, MJE8, MJE82 MJE70, PLASTIC POWER TRANSISTORS MJE80, PLASTIC POWER TRANSISTORS 'Low Power Audio Amplifier Current, High Speed Switching Applications CONFIGURATION EMITTER COLLECTOR Abstract: .. MJE170 MJE170 , MJE171 MJE171 , MJE172 MJE180 MJE180 , MJE181 MJE181 , MJE182 MJE182 MJE170 MJE170 , 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180 MJE180 , 181, 182 NPN PLASTIC POWER TRANSISTORS 'Low Power Audio Amplifier and Low Current, High .. Tags: datasheet abstract..	76.09 Kb	2 Pages	OCR Scan

First line: DESCRIPTION Sustaining Voltage-- VCEO(SUS) Current Gain-- 30(Min) 12(Min) Type MJE172 Abstract: .. : hFE = 30 Min @ IC= 0.5 A = 12 Min @ IC= 1.5 A �Complement to Type MJE172. APPLICATIONS �Low power audio amplifier �Low current high speed switching applications. ABSOLUTE MAXIMUM RATINGS Ta .. Tags: MJE172	99.32 Kb	3 Pages	Original

First line: TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 Abstract: .. MJE170 MJE170 , MJE171 MJE171 , MJE172 MJE180 MJE180 , MJE181 MJE181 , MJE182 MJE182 . ALL DIMENSIONS IN MM. PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE. 1. 3. 2. TO-126 TO-126 SOT-32 SOT-32 Plastic Package. Continental Device India Limited An .. Tags: MJE170 MJE171 MJE172 MJE180 MJE181 MJE182	61 Kb	3 Pages	Original

First line: MJE720 Power nransistors TO-126 Case (Continued) TYPE BVCBO BVCEO VCE(SA (itiA) (MHz) mje180 mje170 mje181 mje171 Abstract: .. .0 15 60 40 50 250 100 0.3 0.5 50 mje181 mje181 mje171 mje171 3.0 15 80 60 50 250 100 0.3 0.5 50 mje182 mje182 mje172 3.0 15 100 80 50 250 100 0.3 0.5 50 mje200 mje200 mje210 mje210 5.0 15 40 25 45 180 2,000 0.3 0.5 65 mje220 mje220 mje230 mje230 4.0 15 60 40 40 .. Tags: MJE720 datasheet abstract..	57.53 Kb	1 Pages	OCR Scan

First line: TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 Abstract: .. MJE170 MJE170 , MJE171 MJE171 , MJE172 MJE180 MJE180 , MJE181 MJE181 , MJE182 MJE182 . ALL DIMENSIONS IN MM. PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE. 1. 3. 2. TO-126 TO-126 SOT-32 SOT-32 Plastic Package. Continental Device India Limited An .. Tags: MJE170 MJE171 MJE172 MJE180 MJE181 MJE182	65.14 Kb	3 Pages	Original

First line: UTV005 Watt, Volts, Class Television Band COMMON EMITTER transistor capable providing Watt Peak, Class Output Power over band MHz. Gold Metalization Diffused Ballasting used provide high reliability supreme ruggedness. Abstract: .. R2=4.7 KOHM, 1/4 W R3= 47 OHM 1/4 W R4=1 OHM, 3 Watt, 1% CR1=IN4148 IN4148 Q1=MJE172. Vbe. C11 C10. RL1 C9. C8. L7. L1. C1. L2. C2 C3. C4. L3 L4. C12. C13. L8. RL2. L5. C5 C6. C7. C14 C15. Vce. L6. C1. R1. R3. Vcc. R4. August 1996 .. Tags: UTV005	379.2 Kb	3 Pages	Original

First line: MJE720 MJE520 datasheet MJE520 equivalent Power Transistors TO-126 Case (Continued) View Bottom View TYPE Abstract: .. MJE182 MJE182 MJE172 3.0 15 100 80 50 250 100 0.3 0.5 50. MJE200 MJE200 MJE210 MJE210 5.0 15 40 25 45 180 2,000 0.3 0.5 65. MJE220 MJE220 MJE230 MJE230 4.0 15 60 40 40 200 200 0.3 0.5 50. MJE221 MJE221 MJE231 MJE231 4.0 15 60 40 40 150 200 0.3 0.5 50. MJE222 MJE222 MJE232 MJE232 .. Tags: MJE800 MJE721 MJE720 MJE702 MJE521 MJE520 equivalent MJE520 datasheet MJE520* MJE370 mje350 MJE340 datasheet abstract..	32.97 Kb	1 Pages	Original

First line: UTV200 Watts, 26.5 Volts, Class Television Band COMMON EMITTER transistor capable providing Watt Peak, Class Output Power over band MHz. transistor includes double input prematching full broadband capability. Gold Metalization Diffused Ballasting used provide high reliability supreme ruggedness. Abstract: .. TRANSISTORS Q1=GHz UTV-200 UTV-200 Q2,Q3=MJE172. TRANSFORMERS T1,T2,T3,T4=50 Ohm semi-rigid coax cable 0.056" X 1.1" soldered to 0.035" X 1.1" microstrip. INDUCTORS L1,L2=0.46 microHenry molded .. Tags: UTV200 MF-50 IN4148 33 ohm 1/4W carbon resistor UTV200	314.41 Kb	3 Pages	Original

First line: MMBTA29* bipolar transistor bc107 transistor 2N4033 SO2222A STMICROELECTRONICS Bipolar Small Signal Abstract: .. 511-MJE172 MJE172 SOT-32 SOT-32 80 3 1.7 3 50/----/250 0.1 50/---- 0.1 .46 .39 .35 .32. 511-2N5195 511-2N5195 2N5195 2N5195 SOT-32 SOT-32 80 4 1.2 4 20/----/80 1.5 2/---- 1 .52 .44 .39 .36. 511-BD680A 511-BD680A BD680A BD680A SOT-32 SOT-32 80 4 2.8 2 750/----/---- 2 .. Tags: SO2222A bipolar transistor bc107 MMBTA29* transistor BD912 transistor bc107b transistor 2N5415 transistor 2N4033 Transistor 2N2219A TO 39 TIP2955 TIP147 tip137 TIP127 STZTA92 datasheet abstract..	106.09 Kb	1 Pages	Original

First line: B0180* 2N4923 BD167 MOTOROLA (XSTRS/R fc.3b?254 OQTBHm TABLE PLASTIC TO-225 Type (Formerly TO-126 Type) T-$2> STYLE vS^fe STYLE EMITTER BASE COLLECTOR J^&OT COLLECTOR BASE EMITTER CASE 77-07 (TO-225AA) Resistive Switching IcCont Amps vCEO(sus) Volts Device Type Min/Max (Case) Watts Abstract: .. /250 0.1 0.6 typ 0.12 typ 0.1 50 12.5 80 BD179 BD179 BD180 BD180 40/250 0.15 3 30 MJE182 MJE182 Hi MJE172 [3 50/250 0.1 0.6 typ 0.12 typ 0.1 50 12.5 200 BUY49P BUY49P 30 min 0.5 25 20 â€ �Case 77 Style 3 , # Ihfel @ 1 MHz, ## Dartington .. Tags: BD167 2N4923 B0180* datasheet abstract..	116.72 Kb	1 Pages	OCR Scan

First line: UTV120 Watts, 26.5 Volts, Class Television Band COMMON EMITTER transistor capable providing Watts Peak, Class Output Power over band MHz. transistor includes double input prematching full broadband capability. Gold Metalization Diffused Ballasting used provide high reliability supreme ruggedness. Abstract: .. TRANSISTORS Q1=GHz UTV-120 UTV-120 Q2,Q3=MJE172. TRANSFORMERS T1,T2,T3,T4=50 Ohm semi-rigid coax cable 0.056" X 1.1" soldered to. 0.035" X 1.1" microstrip. INDUCTORS L1,L2=0.46 microHenry molded .. Tags: UTV120 UTV120	261.57 Kb	3 Pages	Original

First line: SAMSUNG SEMICONDUCTOR 7^145 0007^3 MJE172 EPITAXIAL SILICON TRANSISTOR FREQUENCY AMPLIFIER CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Vcao -100 Collector-Emitter Voltage VcEO Emitter-Base Voltage Vebo Base Current Abstract: .. SAMSUNG SEMICONDUCTOR INC D \| 7^145 0007^3 4 \| MJE172 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta=25Â .. Tags: datasheet abstract..	212.42 Kb	5 Pages	OCR Scan

First line: BD234(-6...-16) MJE520 equivalent MJE720 BD683 Power Transistors TO-126 Case View Bottom View TYPE 0.05 0.05 Abstract: .. MJE182 MJE182 MJE172 3.0 15 100 80 50 250 100 0.3 0.5 50. MJE200 MJE200 MJE210 MJE210 5.0 15 40 25 45 180 2,000 0.3 0.5 65. MJE220 MJE220 MJE230 MJE230 4.0 15 60 40 40 200 200 0.3 0.5 50. MJE221 MJE221 MJE231 MJE231 4.0 15 60 40 40 150 200 0.3 0.5 50. MJE222 MJE222 MJE232 MJE232 .. Tags: BD683 MJE720 BD234(-6...-16) MJE800 MJE721 MJE521 MJE520 equivalent MJE520 datasheet MJE520* MJE371 equivalent mje350 MJE3440 MJE340 datasheet MJE340 datasheet abstract..	39.58 Kb	2 Pages	Original

First line: ACRIAN 0001531 MMMMB HMOBW UTV-005 designed Class UHF, applications 10.5 power gain MHz. Surface passivation eliminates contamination, together with thermal resistance package, extends MTTF. Gold metallization diffused emitter ballast resistors provide excellent reliability ruggedness. Maximum Power Abstract: .. KOHM, 1/4 W IR3 â€” 47 OHM 1/4 W ÃœR4 â€” 1 OHM, 3 Watt, 1% ICR1 - IN4148 IN4148 â€ � iÂ �Â � Â �Q1 â€” MJE172 SPECIFICATIONS MAY BE SUBJECT TO CHANGE WITHOUT NOTICE ACRIAN INC. 97. DE 10182998 000153-1- 2 ~ r- ..J3 .. Tags: datasheet abstract..	490.54 Kb	4 Pages	OCR Scan

First line: 0182998 agrian DDDISBS UTV-010 designed Class (Band applications. 10.5dB power gain 860MHz. Surface passivation, diffused emitter resistors gold metallization provide high reliability, ruggedness Improved MTTF. Maximum Power Dissipation Case Temperature Maximum Voltage Current BVces Collector Emitte Abstract: .. ohm Pot R2 â€” 4.7 Kohm 1/4W R3 ~ 47 ohm 1/4 W R4 â€” 1 ohm 3Watt, 1% Crl â€” IN 4148 Q1-MJE172 iVcc Y 60 SPECIFICATIONS SUBJECT-TO CHANGE WfTHOUT NOTICE 0182998 ACRIAN INC. 97. DEI0182998 DEI0182998 0001535 0. T'--3J .. Tags: lt 860 datasheet abstract..	479.38 Kb	4 Pages	OCR Scan

First line: 0182998 ACRI (GIAS^a DDDlSaT mumm wjmk.' mmmm MMWB Mina miai UTV-020 specifically designed Class (Band applications providing Watts power output 860MHz with 10db power gain. features, include improved intermoduiation distortion, higher gain, higher efficiency, gold metalization diffused emitter ball Abstract: .. ohm Pot R2 â€” 4.7 Kohm 1/4 W R3 - 47 ohm 1/4 W R4 â€” 1 ohm 3 Watt, 1% CRj - IN 4148 Q1 - MJE172 oVcc Substrate - 20 mil teflon glass Sr - 2.55,1 oz. copper_ C1, C4 â€”-100 pf ATC "B" C2 â€”10 pf ATC C3 â€”- 2.0 pf .. Tags: datasheet abstract..	448.74 Kb	4 Pages	OCR Scan

First line: BD436 B0180* TO-126 Plastic PackageTransistors ^ftfeffiffi-" Maximum Ratings Electrical Cnaracteristics Unless Otherwise Specified) Type Polarity VcBO VCE0 Vebo (UA) VcEjSAT, (PF) (MHz) BD175 30.0 3.00 100.00 0.15 0.25 BD176 30.0 3.00 100.00 0.15 0.25 BD177 30.0 3.00 100.00 0.15 0.25 BD17B 30.0 Abstract: .. 60.0" 50.0 0.1 MJE171 MJE171 PNP 80 60 7 12.5 3.00 0.10 80 50 250.00 0.10 1.0 0.3 0.5 60.0' 50.0 0.1 MJE172 PNP 100 80 7 12.5 3.00 0.10 100 50 250.00 0.10 1.0 0.3 0.5 60.0' 50.0 0.1 MJE180 MJE180 NPN 60 40 7 12.5 3.00 0.10 .. Tags: B0180* BD436 datasheet abstract..	135.59 Kb	1 Pages	OCR Scan

First line: BD167 2sc1162 TO-126 Plastic Package Transistors Abstract: .. 60.0" 50.0 0.1 MJE171 MJE171 PNP 80 60 7 12.5 3.00 0.10 80 50 250.00 0.10 1.0 0.3 0.5 60.0" 50.0 0.1 MJE172 PNP 100 80 7 12.5 3.00 0.10 100 50 250.00 0.10 1.0 0.3 0.5 60.0" 50.0 0.1 MJE180 MJE180 NPN 60 40 7 12.5 3.00 0.10 .. Tags: 2sc1162 BD167 datasheet abstract..	219.42 Kb	2 Pages	OCR Scan

First line: hk relay fsp 250 gt L3037 MONOCHIP SILICON SLIC SUITABLE PUBLIC/PRIVATE APPLICATIONS IMPLEMENTS FEATURES BORSCHT FUNCTION SOFT BATTERY REVERSAL WITH PROGRAMMABLE TRANSITION TIME 100ms) METERING PULSE INJECTION FILTERING WITH MINIMAL COMPONENTS COUNT TRIMMING REQUIRED). PROTECTION RESISTOR MISMATCH C Abstract: .. * ex: BD140 BD140 ; MJE172;MJE350 MJE350 .. ST32 ST32 or SOT82 SOT82 package available also for surface mount . For low power application reduced battery voltage BCP53 BCP53 SOT223 SOT223 surface mount package can be .. Tags: fsp 250 gt hk relay ZA 398 SGS transistor BD140 resistor 400ohm datasheet mje350 L3035 bd140 cross reference PLCC44 PQFP44	263.65 Kb	22 Pages	Original

First line: L3037 MONOCHIP SILICON SLIC SUITABLE PUBLIC/PRIVATE APPLICATIONS IMPLEMENTS FEATURES BORSCHT FUNCTION SOFT BATTERY REVERSAL WITH PROGRAMMABLE TRANSITION TIME 100ms) METERING PULSE INJECTION FILTERING WITH MINIMAL COMPONENTS COUNT TRIMMING REQUIRED). PROTECTION RESISTOR MISMATCH COMPENSATION HOOK TRA Abstract: .. * ex: BD140 BD140 ; MJE172;MJE350 MJE350 .. ST32 ST32 or SOT82 SOT82 package available also for surface mount . For low power application reduced battery voltage BCP53 BCP53 SOT223 SOT223 surface mount package can be .. Tags: transistor BD140 TIP BD140 bd140 cross reference L3037 L3037T	351.6 Kb	22 Pages	Original

First line: L3037 MONOCHIP SILICON SLIC SUITABLE PUBLIC/PRIVATE APPLICATIONS IMPLEMENTS FEATURES BORSCHT FUNCTION SOFT BATTERY REVERSAL WITH PROGRAMMABLE TRANSITION TIME 100ms) METERING PULSE INJECTION FILTERING WITH MINIMAL COMPONENTS COUNT TRIMMING REQUIRED). PROTECTION RESISTOR MISMATCH COMPENSATION HOOK TRA Abstract: .. * ex: BD140 BD140 ; MJE172;MJE350 MJE350 .. ST32 ST32 or SOT82 SOT82 package available also for surface mount . For low power application reduced battery voltage BCP53 BCP53 SOT223 SOT223 surface mount package can be .. Tags: bd140 cross reference PLCC44 PQFP44	9892.22 Kb	22 Pages	Original

First line: f tip42c NJ 20 U1 W 2N6124 d45hb* d45hb NATL SENICOND {DISCRETE} tSDllBD 6501130 NATL SEMICOND, (DISCRETE) Abstract: .. MJE172. TO �126. 80. 0.1. 100. ~ U1. MJE712 MJE712 . TO �126. 80. lOOt soot soot 500t 500t . 80. 2N6489 2N6489 2N6490 2N6490 2N6491 2N6491 . TO �220 .. Tags: d45hb d45hb* 2N6124 NJ 20 U1 W f tip42c datasheet abstract..	201.02 Kb	5 Pages	OCR Scan

First line: BJT BD139 Power General Purpose Products VCEO VCBO VEBO (sat) TO-126 Configuration KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD157 BD158 KSE340 MJE340 BD159 KSC2690A BD135 BD137 BD139 BD233 BD375 BD235 BD377 BD237 BD379 KSD882 KSE180 MJE180 BD175 KSD794 BD177 KSE181 MJE181 12.5 12.5 1 Abstract: .. MJE172 3 80 100 7 12.5 50 250 0.1 - 0.3 BD434 BD434 4 22 22 5 36 40 140 0.01 0.2 0.5 BD436 BD436 4 32 32 5 36 40 140 0.01 0.2 0.5 BD438 BD438 4 45 45 5 36 30 140 0.01 0.2 0.6 BD440 BD440 4 60 60 5 36 20 140 0.01 - 0.8 BD442 BD442 4 80 80 5 36 15 140 .. Tags: BJT BD139 tip41c tip42c MJE340 mjd350 ksh210 equivalent KSH200* KSE350 KSD73 KSD288 KSD201* KSD1273 KSC1173 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 KSE340 MJE340 KSC2690A KSD882 KSE180 MJE180 KSD794 KSE181 MJE181	115.8 Kb	9 Pages	Original

First line: ptc resistor THERMAL PROTECTION ZA 398 SGS SGS-TtiOMSON L3037 PLCC44 PQFP44(10x10) ORDERING NUMBERS: L3037FN L3037QN MONOCHIP SILICON SLIC SUITABLE PUBLIC/PRIVATE APPLICATIONS IMPLEMENTS FEATURES BORSCHT FUNCTION Abstract: .. * ex: BD140 BD140 ; MJE172;MJE350 MJE350 .. ST32 ST32 or SOT82 SOT82 package available also for surface mount . For low power application reduced battery voltage BCP53 BCP53 SOT223 SOT223 surface mount package can be .. Tags: ZA 398 SGS ptc resistor THERMAL PROTECTION datasheet abstract..	816.53 Kb	21 Pages	OCR Scan

First line: SGS-TtiOMSON L3037 PLCC44 PQFP44(10x10) ORDERING NUMBERS: L3037FN L3037QN MONOCHIP SILICON SLIC SUITABLE PUBLIC/PRIVATE APPLICATIONS IMPLEMENTS FEATURES BORSCHT FUNCTION Abstract: .. * ex: BD140 BD140 ; MJE172;MJE350 MJE350 .. ST32 ST32 or SOT82 SOT82 package available also for surface mount . For low power application reduced battery voltage BCP53 BCP53 SOT223 SOT223 surface mount package can be .. Tags: datasheet abstract..	815.97 Kb	21 Pages	OCR Scan

First line: LM391N National Semiconductor LM391 Audio Power Driver LM391 audio power driver designed drive external power transistors watt power amplifier designs. High power supply voltage operation true high fidelity performance distinguish this LM391 internally protected output faults thermal overloads; circ Abstract: .. NPN 20w @ en 30W @ 4il MJE711 MJE711 MJE171 MJE171 D43C8 D43C8 MJE721 MJE721 MJE181 MJE181 D42C8 D42C8 40W @ 8 il 60W @ 4il MJE712 MJE712 MJE172 D43C11 D43C11 MJE722 MJE722 MJE182 MJE182 D42C11 D42C11 TIP42A TIP42A 2N6490 2N6490 TIP41A TIP41A 2N6487 2N6487 2N5882 2N5882 2N5880 2N5880 _ 1-49 ■ bSDHE4 00^1523 54T ■ This .. Tags: LM391N datasheet abstract..	393.97 Kb	11 Pages	OCR Scan

First line: BD912 MJ802 EQUIVALENT BU808DFI equivalent BUH515 BU808DFI DEVICE TYPE VCEO 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 Abstract: .. MJE172 80 100 3.0 12.5 SOT-32 SOT-32 General Purpose MJE182 MJE182 80 100 3.0 12.5 SOT-32 SOT-32 General Purpose MJE210 MJE210 25 40 5.0 15 SOT-32 SOT-32 General Purpose MJE340 MJE340 300 300 0.5 20 SOT-32 SOT-32 Switching MJE350 MJE350 300 300 0 .. Tags: BU808DFI BUH515 BU808DFI equivalent MJ802 EQUIVALENT BD912 TO-218 TO 39 tip41c tip42c tip35c equivalent TIP32B TIP147 TIP135 STPSA42* STD616A STB13005 ST901T 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490 2N6547 2N6577 2N6668	471.79 Kb	8 Pages	Original

First line: capacitor 100MF 100v BD140 ST MICROELECTRONICS L3234 100nF/5V capacitor L3234 L3235 HIGHLY INTEGRATED SLIC TARGETED PABX SYSTEM APPLICATIONS HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE PABX SYSTEM APPLICATIONS IMPLEMENTS ELEMENTS BORSCHT FUNCTION INTEGRATED ZERO CROSSING BALANCED RINGING INJECTION E Abstract: .. 3 ex: BD140 BD140 ; MJE172; MJE350 MJE350 .. SOT32 SOT32 or SOT82 SOT82 package available also for surface mount . For low power application reduced battery voltage BCP53 BCP53 SOT223 SOT223 surface mount package can be .. Tags: L3234 BD140 ST MICROELECTRONICS capacitor 100MF 100v SGS-Thomson telephone ic CR injector driver bd140 cross reference 10uF 160v 100nF/5V capacitor 100MF 160v L3234 L3235 L3234 L3235 L3234T L3235T	513.82 Kb	26 Pages	Original

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MJE172	N/A	Silicon PNP	Specification

MJE172	N/A	High Power, High Voltage, General Purpose	Specification