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MJD50T4G ON Semiconductor 1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL visit Digikey
MJD50G ON Semiconductor 1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE visit Digikey
NJVMJD50T4G ON Semiconductor 1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL visit Digikey

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Part : MJD50G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 5,142 Best Price : $0.1860 Price Each : $0.60
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 1,575 Best Price : €0.2089 Price Each : €0.2962
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.1999 Price Each : €0.3961
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1690 Price Each : $0.1848
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 52,500 Best Price : €0.1833 Price Each : €0.2065
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.3040 Price Each : $0.57
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.2529 Price Each : $0.2765
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1531 Price Each : $0.1621
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : - Best Price : $0.1930 Price Each : $0.7090
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 393 Best Price : $0.1860 Price Each : $0.60
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : - Best Price : $0.2070 Price Each : $0.7070
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 4,800 Best Price : $0.2430 Price Each : $0.57
Part : MJD50TF Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : - Best Price : $0.1660 Price Each : $0.1840
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.2150 Price Each : $0.25
Part : MJD50TF Supplier : Fairchild Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.1770 Price Each : $0.1770
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2,360 Best Price : $0.22 Price Each : $0.27
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 20,000 Best Price : $0.34 Price Each : $0.42
Part : MJD50TF Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 16,181 Best Price : $0.21 Price Each : $0.25
Part : NJVMJD50T4G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2,000 Best Price : $0.24 Price Each : $0.29
Part : MJD50TF Supplier : Fairchild Semiconductor Manufacturer : America II Electronics Stock : 3,210 Best Price : - Price Each : -
Part : MJD50T4 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 2,480 Best Price : $0.1470 Price Each : $0.5250
Part : MJD50T4 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 375 Best Price : $0.2025 Price Each : $0.6750
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 6,663 Best Price : - Price Each : -
Part : MJD50G Supplier : ON Semiconductor Manufacturer : RS Components Stock : 375 Best Price : £0.27 Price Each : £0.3920
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : RS Components Stock : 998 Best Price : £0.29 Price Each : £0.43
Part : MJD50TF Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 1,320 Best Price : £0.1460 Price Each : £0.2020
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : TME Electronic Components Stock : 2,467 Best Price : $0.15 Price Each : $0.22
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 3 Best Price : $0.3289 Price Each : $0.3289
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 33 Best Price : $0.4070 Price Each : $0.4070
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 22,500 Best Price : $0.1920 Price Each : $0.1920
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 490 Best Price : $0.3442 Price Each : $0.5058
Part : MJD50G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 393 Best Price : $0.21 Price Each : $0.7770
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.23 Price Each : $0.8240
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.25 Price Each : $0.2750
Part : MJD50T4G. Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 4,800 Best Price : $0.23 Price Each : $0.8240
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 2,914 Best Price : £0.1630 Price Each : £0.4650
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : - Best Price : £0.2150 Price Each : £0.5090
Part : MJD50T4G. Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 4,800 Best Price : £0.3230 Price Each : £0.4790
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 2,000 Best Price : $0.25 Price Each : $0.38
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MJD50 Datasheet

Part Manufacturer Description PDF Type
MJD50 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
MJD50 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
MJD50 Kexin NPN Epitaxial Silicon Transistor Original
MJD50 Motorola NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS Original
MJD50 On Semiconductor High Voltage Power Transistors Original
MJD50 ON Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS POWER NPN 1A 400V DPAK Original
MJD50 STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Original
MJD50 STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Original
MJD50 TY Semiconductor NPN Epitaxial Silicon Transistor - TO-252 Original
MJD50 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
MJD50 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJD50 Motorola NPN Silicon Power Transistors 1 Amp 250,400 Volts, 15W Scan
MJD50 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
MJD50-1 Motorola NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS Original
MJD50-1 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJD50-1 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
MJD50G On Semiconductor Bipolar Power DPAK NPN 1A 400V; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Rail; Qty per Container: 75 Original
MJD50G On Semiconductor MJD50 - TRANSISTOR 1 A, 400 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, PLASTIC, CASE 369C, DPAK-3, BIP General Purpose Power Original
MJD50-I Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
MJD50I Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
Showing first 20 results.

MJD50

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Transistors SMD Type Product specification MJD47;MJD50 +0.15 6.50-0.15 +0.2 5.30-0.2 , otherwise noted Parameter Collector-Emitter Voltage Rating Unit 350 V MJD50 Collector-Emitter Voltage Symbol 500 V MJD47 250 V 400 V MJD47 VCBO VCEO MJD50 , Gain Bandwidth Product *Pulse Test: PW Unit VCE = 500, VEB = 0 ICES MJD50 DC Current Gain * Max VCE = 300V, IB = 0 ICEO MJD50 Emitter Cut-off Current Typ 400 VCEO TY Semiconductor
Original
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD47* MJD50* High Voltage Power Transistors DPAK , Rating Collector-Emitter Voltage MJD47 MJD50 400 Vdc 500 Vdc Unit VCEO 250 , Collector-Emitter Sustaining Voltage (1) MJD47 OC - 30 mAdc, Ià - 0) MJD50 Collector Cutoff Current (V c E -1 5 0 V d c , Ib = 0) (V c e â' 300 Vdc, Ià - 0) MJD47 MJD50 â'" mAdc 0.2 0.2 * When , MJD47 MJD50 ELECTRICAL CHARACTERISTICS - continued (Tq . 25°C unless otherwise noted) Symbol -
OCR Scan
TIP47 TIP50
Abstract: Rating Symbol MJD47 MJD50 Unit Collector-Emitter Voltage VCEO 250 400 Vdc Collector-Base Voltage VCB , Collector-Emitter Sustaining Voltage (1) MJD47 (IC = 30mAdc, Ib = 0) MJD50 VcEO(sus) 250 400 â'" Vdc Collector Cutoff Current ICEO mAdc (Vce= 150 Vdc, Ib = 0) MJD47 _ 0.2 (Vqe = 300 Vdc, Ib = 0) MJD50 â'" 0.2 MJD47* MJD50* 'Motorola Preferred Device NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 , value. REV 1 - fM) MOTOROLA > Motorola, Inc. 1995 MJD47 MJD50 ELECTRICAL CHARACTERISTICS - -
OCR Scan
A 673 transistor transistor 228 T3 369A-13 MJD47/D
Abstract: : Pulse Width v 300 ms, Duty Cycle v 2%. ORDERING INFORMATION Device MJD47 MJD47T4 MJD50 MJD50T4 , MJD47, MJD50 Preferred Device High Voltage Power Transistors DPAK For Surface Mount , Collector-Emitter Voltage MJD47 MJD50 Collector-Base Voltage MJD47 MJD50 Emitter-Base Voltage Collector Current - , ) MJD47 MJD50 VCEO(sus) Vdc 250 400 - - MJD47, MJD50 - ICEO mAdc MJD47 MJD50 - - 0.2 , Current (VBE = 5 Vdc, IC = 0) ICES mAdc MJD47 MJD50 - - 0.1 0.1 1 IEBO mAdc ON ON Semiconductor
Original
Abstract: MJD50 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s , ) uc d DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology , January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA R , MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter , ) t( ro P so Ob - Collector-Base Capacitance let o bs O 3/6 MJD50 STMicroelectronics
Original
P032P
Abstract: ON Semiconductort MJD47 * MJD50 * High Voltage Power Transistors DPAK For Surface Mount , MJD47 MJD50 Unit VCEO 250 400 Vdc Collector­Base Voltage VCB 350 500 , 300 Vdc, IB = 0) ICEO MJD47 MJD50 mAdc - - *When surface mounted on minimum pad , Collector­Emitter Sustaining Voltage (1) MJD47 (IC = 30 mAdc, IB = 0) MJD50 0.063 1.6 OFF CHARACTERISTICS , Vdc, VBE = 0) (VCE = 500 Vdc, VBE = 0) MJD47 MJD50 ICES mAdc mAdc OFF CHARACTERISTICS ON Semiconductor
Original
Abstract: ) 2500 / Tape & Reel 369C MJD50G 369C (Pb-Free) MJD50T4 75 Units / Rail 369C , MJD47, MJD50 Preferred Device High Voltage Power Transistors DPAK For Surface Mount , RATINGS Rating Symbol Collector-Emitter Voltage Max VCEO MJD47 MJD50 Collector-Base Voltage Vdc 250 400 VCB Vdc 350 500 MJD47 MJD50 Emitter-Base Voltage DPAK CASE 369C , ) IEBO Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47 MJD50 ON Semiconductor
Original
MJD47T4G MJD47G BRD8011/D
Abstract: MJD50 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s , ) DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a , January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA R , 150 MHz MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage , MJD50 Switching Time Inductive Load Switching Time Inductive Load Switching Time Inductive Load STMicroelectronics
Original
TIP50 application notes TO252-DPAK
Abstract: Transistors SMD Type NPN Epitaxial Silicon Transistor MJD47;MJD50 +0.15 6.50-0.15 +0.2 , otherwise noted Parameter Collector-Emitter Voltage Rating Unit 350 V MJD50 Collector-Emitter Voltage Symbol 500 V MJD47 250 V 400 V MJD47 VCBO VCEO MJD50 , Gain Bandwidth Product *Pulse Test: PW Unit VCE = 500, VEB = 0 ICES MJD50 DC Current Gain * Max VCE = 300V, IB = 0 ICEO MJD50 Emitter Cut-off Current Typ 400 VCEO Kexin
Original
npn smd 2a 300V transistor npn 2a smd transistor 2A
Abstract: VCBO VCEO Parameter Collector-Emitter Voltage : MJD47 : MJD50 Value 350 500 V V 250 400 Collector-Emitter Voltage : MJD47 : MJD50 Units V V VEBO Emitter-Base , ) Parameter * Collector-Emitter Sustaining Voltage : MJD47 : MJD50 ICEO Test Condition IC = 30mA, IB = 0 Min. 250 400 Max. Units V V Collector Cut-off Current : MJD47 : MJD50 0.2 0.2 mA mA : MJD47 : MJD50 ICES VCE = 150V, IB = 0 VCE = 300V, IB = 0 VCE = 350, VEB = Fairchild Semiconductor
Original
MJD47/50
Abstract: MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s SGS-THOMSON PREFERRED , s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD50 is manufactured using Medium , Temperature 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA R t hj-ca se , 150 MHz MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage , MJD50 Switching Time Inductive Load Switching Time Inductive Load Switching Time Inductive Load STMicroelectronics
Original
0068772-B
Abstract: MJD50 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s , "T4") DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology , emperature January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA , MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Capacitance 3/6 MJD50 STMicroelectronics
Original
Abstract: Collector Current MAXIMUM RATINGS Rating Symbol MJD47 MJD50 Unit Collector-Emitter Voltage VCEO 250 400 , CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) MJD47 dC = 30 mAdc, lB = 0) MJD50 VcEO(sus) 250 400 â'" Vdc Collector Cutoff Current (Vqe = 160 Vdc, Ib = 0) MJD47 (Vce = 300 Vdc, lg = 0) MJD50 ICEO - 0.2 0.2 mAdc MJD47 MJD50 NPN SIUCON POWER TRANSISTORS 1 AMPERE 250,400 VOLTS 15 WATTS CASE 369A-04 , Manufacturer MOTOROLA SC XSTRS/R F 12E D J b3b75S4 MJD47, MJD50 G0êS25â ^ I ELECTRICAL CHARACTERISTICS â -
OCR Scan
t337 motorola transistor s46 transistor MJD47 T-33- Y115M M-0051 19S2- MJD47-T
Abstract: Device MJD47G MJD47T4G NJVMJD47T4G MJD50G MJD50T4G Package 369C (Pb-Free) 369C (Pb-Free) 369C (Pb-Free , MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK for Surface Mount Applications , Voltage MJD47, NJVMJD47T4G MJD50 Collector-Base Voltage MJD47, NJVMJD47T4G MJD50 Emitter-Base Voltage , Publication Order Number: MJD47/D MJD47, NJVMJD47T4G, MJD50 THERMAL CHARACTERISTICS Characteristic , Collector-Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) MJD47, NJVMJD47T4G MJD50 Collector Cutoff ON Semiconductor
Original
AEC-Q101
Abstract: Parameter Collector-Emitter Voltage : MJD47 : MJD50 Collector-Emitter Voltage : MJD47 : MJD50 Emitter-Base , : MJD47 : MJD50 Collector Cut-off Current : MJD47 : MJD50 ICES Collector Cut-off Current : MJD47 : MJD50 , 0u PC[W], POWER DISSIPATION 1000 s 15 1m s 0.1 10 0.01 MJD47 MJD50 , Production ©2001 Fairchild Semiconductor Corporation Rev. H3 Product Folder - Fairchild P/N MJD50 - , Semiconductor space space space space space space >> Find products >> Home find products space space space MJD50 Fairchild Semiconductor
Original
MJD47TF
Abstract: ® MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s ) s ( t c u d o ) r s , DPAK TO-252 (Suffix "T4") DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial , 2000 1/6 MJD50 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal , Curves 2/6 MJD50 DC Current Gain DC Current Gain ) s ( t c u d o ) r s ( P t c e t u e d l o o , Collector-Base Capacitance 3/6 MJD50 Switching Time Inductive Load Switching Time Inductive Load ) s STMicroelectronics
Original
Abstract: / Rail 369C MJD47T4G MJD50 369C (Pb-Free) 2500 / Tape & Reel 369C MJD50G 369C (Pb-Free) MJD50T4 75 Units / Rail 369C MJD50T4G 369C (Pb-Free) 2500 / Tape & Reel For , MJD47, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications D e s i g n e d , MJD50 MJD47 MJD50 Emitter-Base Voltage VCEO VCB 3 Max Unit Vdc 250 400 , Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47 MJD50 Collector ON Semiconductor
Original
Abstract: ) 2500 / Tape & Reel 369C MJD50G 369C (Pb-Free) MJD50T4 75 Units / Rail 369C , MJD47, MJD50 Preferred Device High Voltage Power Transistors DPAK For Surface Mount , 2 3 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Max VCEO MJD47 MJD50 Collector-Base Voltage Vdc 250 400 VCB Vdc 350 500 MJD47 MJD50 Emitter-Base Voltage DPAK , ) IEBO Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47 MJD50 ON Semiconductor
Original
Abstract: Characteristic Symbol Rating Unit Collector Base Voltage : MJD47 VcBO 350 V : MJD50 500 V Collector Emitter Voltage : MJD47 VcEO 250 V : MJD50 400 V Emitter Base Voltage Vebo 5 V Collector Current (DC) lc 1 A , , lB= 0 250 V : MJD50 400 V Collector Cutoff Current : MJD47 IcEO VCE= 150V, lB=0 0.2 mA : MJD50 Vce = 300V, lB=0 0.2 mA Collector Cutoff Current : MJD47 Ices Vce= 350, Veb= 0 0.1 mA : MJD50 -
OCR Scan
0J52
Abstract: ic iß pd MJD47 250 350 5 MJD50 400 500 Unit Vdc Vdc Vdc Ade Ade Watts W/°C Watts W/°C °C M , MJD50 MJD47 MJD50 VcEO(sus) ICEO 250 400 - - - Vdc mAdc 1.6 0.063 2.3 M in M ax Unit 0.2 , D | b3fe,?aS4 G 0 ê S 2 5 â 3 3 - T | MJD47, MJD50 T 0 7 ELECTRICAL CHARACTERISTICS - , MJD50 , | b 3 b 7 S S 4 D âS 2 S cï Q | MJD47, MJD50 Figu re 3. D C C u rre n t G a in F igu re 4. " -
OCR Scan
T2500M CL24S MJD47-1
Abstract: MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications , Collector-Emitter Voltage MJD47, NJVMJD47T4G MJD50 Collector-Base Voltage MJD47, NJVMJD47T4G MJD50 Emitter-Base , , NJVMJD47T4G, MJD50 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction-to-Case Thermal , Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) MJD47, NJVMJD47T4G MJD50 VCEO(sus) 250 400 - 2. These , Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47, NJVMJD47T4G MJD50 MJD47 ON Semiconductor
Original
Showing first 20 results.