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Part Manufacturer Description PDF Samples Ordering
MJD50TF Fairchild Semiconductor Corporation NPN Epitaxial Silicon Transistor, 3LD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK), 2000/TAPE REEL ri Buy

MJD50 Datasheet

Part Manufacturer Description PDF Type Ordering
MJD50 Motorola Motorola Semiconductor Data & Cross Reference Book
ri

6 pages,
209.21 Kb

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MJD50-1 Motorola Motorola Semiconductor Data & Cross Reference Book
ri

1 pages,
43.06 Kb

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MJD50 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
ri

1 pages,
41.29 Kb

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MJD50-1 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
ri

1 pages,
41.29 Kb

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MJD50RL N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
ri

1 pages,
40.48 Kb

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MJD50 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR
ri

2 pages,
147.47 Kb

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MJD50 Fairchild Semiconductor NPN Epitaxial Silicon Transistor
ri

4 pages,
43.4 Kb

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MJD50 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR
ri

3 pages,
242.05 Kb

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MJD50 Motorola NPN Silicon Power Transistors 1 Amp 250,400 Volts, 15W
ri

4 pages,
276.87 Kb

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MJD50 Motorola NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS
ri

6 pages,
183 Kb

Original Buy
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MJD50

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Transistors SMD Type Product specification MJD47 MJD47;MJD50 +0.15 6.50-0.15 +0.2 5.30-0.2 , otherwise noted Parameter Collector-Emitter Voltage Rating Unit 350 V MJD50 Collector-Emitter Voltage Symbol 500 V MJD47 MJD47 250 V 400 V MJD47 MJD47 VCBO VCEO MJD50 , Gain Bandwidth Product *Pulse Test: PW Unit VCE = 500, VEB = 0 ICES MJD50 DC Current Gain * Max VCE = 300V, IB = 0 ICEO MJD50 Emitter Cut-off Current Typ 400 VCEO ... TY Semiconductor
Original
datasheet

1 pages,
61.6 Kb

TEXT
datasheet frame
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD47 MJD47* MJD50* High Voltage Power Transistors DPAK , Rating Collector-Emitter Voltage MJD47 MJD47 MJD50 400 Vdc 500 Vdc Unit VCEO 250 , Collector-Emitter Sustaining Voltage (1) MJD47 MJD47 OC - 30 mAdc, Iß - 0) MJD50 Collector Cutoff Current (V c E -1 5 0 V d c , Ib = 0) (V c e “ 300 Vdc, Iß - 0) MJD47 MJD47 MJD50 — mAdc 0.2 0.2 * When , MJD47 MJD47 MJD50 ELECTRICAL CHARACTERISTICS - continued (Tq . 25°C unless otherwise noted) Symbol ... OCR Scan
datasheet

4 pages,
99.58 Kb

MJD47 MJD50 TEXT
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Abstract: Rating Symbol MJD47 MJD47 MJD50 Unit Collector-Emitter Voltage VCEO 250 400 Vdc Collector-Base Voltage VCB , Collector-Emitter Sustaining Voltage (1) MJD47 MJD47 (IC = 30mAdc, Ib = 0) MJD50 VcEO(sus) 250 400 — Vdc Collector Cutoff Current ICEO mAdc (Vce= 150 Vdc, Ib = 0) MJD47 MJD47 _ 0.2 (Vqe = 300 Vdc, Ib = 0) MJD50 — 0.2 MJD47 MJD47* MJD50* 'Motorola Preferred Device NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 , value. REV 1 - fM) MOTOROLA > Motorola, Inc. 1995 MJD47 MJD47 MJD50 ELECTRICAL CHARACTERISTICS - ... OCR Scan
datasheet

5 pages,
247.84 Kb

TIP50 TIP47 MJD50 MJD47 369A-13 transistor 228 T3 A 673 transistor MJD47/D TEXT
datasheet frame
Abstract: : Pulse Width v 300 ms, Duty Cycle v 2%. ORDERING INFORMATION Device MJD47 MJD47 MJD47T4 MJD47T4 MJD50 MJD50T4 , MJD47 MJD47, MJD50 Preferred Device High Voltage Power Transistors DPAK For Surface Mount , Collector-Emitter Voltage MJD47 MJD47 MJD50 Collector-Base Voltage MJD47 MJD47 MJD50 Emitter-Base Voltage Collector Current - , ) MJD47 MJD47 MJD50 VCEO(sus) Vdc 250 400 - - MJD47 MJD47, MJD50 - ICEO mAdc MJD47 MJD47 MJD50 - - 0.2 , Current (VBE = 5 Vdc, IC = 0) ICES mAdc MJD47 MJD47 MJD50 - - 0.1 0.1 1 IEBO mAdc ON ... ON Semiconductor
Original
datasheet

4 pages,
89.18 Kb

MJD47 MJD50 TEXT
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Abstract: MJD50 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s , ) uc d DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology , January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA R , MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter , ) t( ro P so Ob - Collector-Base Capacitance let o bs O 3/6 MJD50 ... STMicroelectronics
Original
datasheet

6 pages,
154.14 Kb

TIP50 MJD50 TEXT
datasheet frame
Abstract: ON Semiconductort MJD47 MJD47 * MJD50 * High Voltage Power Transistors DPAK For Surface Mount , MJD47 MJD47 MJD50 Unit VCEO 250 400 Vdc Collector­Base Voltage VCB 350 500 , 300 Vdc, IB = 0) ICEO MJD47 MJD47 MJD50 mAdc - - *When surface mounted on minimum pad , Collector­Emitter Sustaining Voltage (1) MJD47 MJD47 (IC = 30 mAdc, IB = 0) MJD50 0.063 1.6 OFF CHARACTERISTICS , Vdc, VBE = 0) (VCE = 500 Vdc, VBE = 0) MJD47 MJD47 MJD50 ICES mAdc mAdc OFF CHARACTERISTICS ... ON Semiconductor
Original
datasheet

8 pages,
83.3 Kb

TIP50 TIP47 MJD50 MJD47 TEXT
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Abstract: ) 2500 / Tape & Reel 369C MJD50G 369C (Pb-Free) MJD50T4 75 Units / Rail 369C , MJD47 MJD47, MJD50 Preferred Device High Voltage Power Transistors DPAK For Surface Mount , RATINGS Rating Symbol Collector-Emitter Voltage Max VCEO MJD47 MJD47 MJD50 Collector-Base Voltage Vdc 250 400 VCB Vdc 350 500 MJD47 MJD47 MJD50 Emitter-Base Voltage DPAK CASE 369C , ) IEBO Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47 MJD47 MJD50 ... ON Semiconductor
Original
datasheet

4 pages,
55.8 Kb

TIP50 MJD47G MJD47T4 MJD47T4G MJD50 MJD47 MJD50T4G TIP47 MJD50T4 MJD50G TEXT
datasheet frame
Abstract: MJD50 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s , ) DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a , January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA R , 150 MHz MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage , MJD50 Switching Time Inductive Load Switching Time Inductive Load Switching Time Inductive Load ... STMicroelectronics
Original
datasheet

6 pages,
141.46 Kb

TIP50 application notes TIP50 MJD50 TEXT
datasheet frame
Abstract: Transistors SMD Type NPN Epitaxial Silicon Transistor MJD47 MJD47;MJD50 +0.15 6.50-0.15 +0.2 , otherwise noted Parameter Collector-Emitter Voltage Rating Unit 350 V MJD50 Collector-Emitter Voltage Symbol 500 V MJD47 MJD47 250 V 400 V MJD47 MJD47 VCBO VCEO MJD50 , Gain Bandwidth Product *Pulse Test: PW Unit VCE = 500, VEB = 0 ICES MJD50 DC Current Gain * Max VCE = 300V, IB = 0 ICEO MJD50 Emitter Cut-off Current Typ 400 VCEO ... Kexin
Original
datasheet

1 pages,
36.71 Kb

smd transistor 2A MJD47 300V transistor npn 2a MJD50 npn smd 2a TEXT
datasheet frame
Abstract: VCBO VCEO Parameter Collector-Emitter Voltage : MJD47 MJD47 : MJD50 Value 350 500 V V 250 400 Collector-Emitter Voltage : MJD47 MJD47 : MJD50 Units V V VEBO Emitter-Base , ) Parameter * Collector-Emitter Sustaining Voltage : MJD47 MJD47 : MJD50 ICEO Test Condition IC = 30mA, IB = 0 Min. 250 400 Max. Units V V Collector Cut-off Current : MJD47 MJD47 : MJD50 0.2 0.2 mA mA : MJD47 MJD47 : MJD50 ICES VCE = 150V, IB = 0 VCE = 300V, IB = 0 VCE = 350, VEB = ... Fairchild Semiconductor
Original
datasheet

4 pages,
42.57 Kb

TIP50 TIP47 MJD50 MJD47 MJD47/50 TEXT
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Abstract: ic iß pd MJD47 MJD47 250 350 5 MJD50 400 500 Unit Vdc Vdc Vdc Ade Ade Watts W/°C Watts W/°C °C M , MJD50 MJD47 MJD47 MJD50 VcEO(sus) ICEO 250 400 - - - Vdc mAdc 1.6 0.063 2.3 M in M ax Unit 0.2 , D | b3fe,?aS4 G 0 ê S 2 5 â 3 3 - T | MJD47 MJD47, MJD50 T 0 7 ELECTRICAL CHARACTERISTICS - , MJD50 , | b 3 b 7 S S 4 D âS 2 S cï Q | MJD47 MJD47, MJD50 Figu re 3. D C C u rre n t G a in F igu re 4. " ... OCR Scan
datasheet

4 pages,
254.58 Kb

TEXT
datasheet frame
Abstract: Parameter Collector-Emitter Voltage : MJD47 MJD47 : MJD50 Collector-Emitter Voltage : MJD47 MJD47 : MJD50 Emitter-Base , : MJD47 MJD47 : MJD50 Collector Cut-off Current : MJD47 MJD47 : MJD50 ICES Collector Cut-off Current : MJD47 MJD47 : MJD50 , 0u PC[W], POWER DISSIPATION 1000 s 15 1m s 0.1 10 0.01 MJD47 MJD47 MJD50 , Production ©2001 Fairchild Semiconductor Corporation Rev. H3 Product Folder - Fairchild P/N MJD50 - , Semiconductor space space space space space space >> Find products >> Home find products space space space MJD50 ... Fairchild Semiconductor
Original
datasheet

6 pages,
89.4 Kb

MJD47/50 TIP47 TIP50 TEXT
datasheet frame
Abstract: MJD47 MJD47, NJVMJD47T4G NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK for Surface Mount Applications , Voltage MJD47 MJD47, NJVMJD47T4G NJVMJD47T4G MJD50 Collector-Base Voltage MJD47 MJD47, NJVMJD47T4G NJVMJD47T4G MJD50 Emitter-Base Voltage , Publication Order Number: MJD47/D MJD47/D MJD47 MJD47, NJVMJD47T4G NJVMJD47T4G, MJD50 THERMAL CHARACTERISTICS Characteristic , Collector-Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) MJD47 MJD47, NJVMJD47T4G NJVMJD47T4G MJD50 Collector Cutoff Current (VCE = 150 Vdc, IB = 0) MJD47 MJD47, NJVMJD47T4G NJVMJD47T4G (VCE = 300 Vdc, IB = 0) MJD50 VCEO(sus) Vdc ... ON Semiconductor
Original
datasheet

6 pages,
109.15 Kb

MJD47 NJVMJD47T4G MJD50 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Document Number: 5290 Date formats: Portable Document Format and Raw Text Format MJD50 HIGH VOLTAGE DESCRIPTION The MJD50 is manufactured using Medium Derating Curves MJD50 2/6 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Capacitance MJD50 3/6
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5290-v1.htm
STMicroelectronics 02/04/1999 4.96 Kb HTM 5290-v1.htm
MJD50 Document Format Size Document Number Date Update Pages MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n STMicroelectronics PREFERRED SALESTYPE n DESCRIPTION The MJD50 is manufactured using Operating Area Derating Curves MJD50 2/6 DC Current Gain Collector-Emitter Saturation Voltage Capacitance MJD50 3/6 Switching Time Inductive Load Switching Time Inductive Load Switching Time
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5290-v3.htm
STMicroelectronics 25/05/2000 6.63 Kb HTM 5290-v3.htm
MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Document Number: 5290 Date formats: Portable Document Format and Raw Text Format MJD50 HIGH VOLTAGE DESCRIPTION The MJD50 is manufactured using Medium Derating Curves MJD50 2/6 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Capacitance MJD50 3/6
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5290-v2.htm
STMicroelectronics 14/06/1999 4.92 Kb HTM 5290-v2.htm
MJD50 Document Format Size Document Number Date Update Pages Portable Document Format 5290 25/01/2000 6 Raw Text Format MJD50 The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged * Pulsed: Pulse duration = 300 m s, duty cycle 1.5 % Safe Operating Area Derating Curves MJD50 2/6 DC Collector-Emitter Saturation Voltage Collector-Base Capacitance MJD50 3/6 Switching Time Inductive Load Switching
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5290.htm
STMicroelectronics 20/10/2000 6.93 Kb HTM 5290.htm
ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 Document Format Size Document Number Date Update Pages Portable Document Format 5290 25/01/2000 6 Raw Text Format
/datasheets/files/stmicroelectronics/stonline/books/all/5290-v3.htm
STMicroelectronics 20/10/2000 2.72 Kb HTM 5290-v3.htm
ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Document Number: 5290 Date Update: 30/09/97 Pages: 6 The document is available in the following formats: Portable Document Format and Raw Text Format
/datasheets/files/stmicroelectronics/stonline/books/all/5290-v1.htm
STMicroelectronics 31/03/1999 0.91 Kb HTM 5290-v1.htm
ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 Document Format Size Document Number Date Update Pages Portable Document Format 5290 25/01/2000 6 Raw Text Format
/datasheets/files/stmicroelectronics/books/all/5290.htm
STMicroelectronics 25/05/2000 2.72 Kb HTM 5290.htm
ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Document Number: 5290 Date Update: 30/09/97 Pages: 6 The document is available in the following formats: Portable Document Format and Raw Text Format
/datasheets/files/stmicroelectronics/stonline/books/all/5290-v2.htm
STMicroelectronics 14/06/1999 0.89 Kb HTM 5290-v2.htm
TRANSISTORS 5 846 Datasheets MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 5
/datasheets/files/stmicroelectronics/stonline/pnsearch/static/204.htm
STMicroelectronics 31/03/1999 15.52 Kb HTM 204.htm
ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 Document Format Size Document Number Date Update Pages Portable Document Format 5290 25/01/2000 6 Raw Text Format
/datasheets/files/stmicroelectronics/stonline/books/all/5290-v4.htm
STMicroelectronics 25/05/2000 2.68 Kb HTM 5290-v4.htm

Shortform Datasheet Search

Part Manufacturer Description Shortform Datasheet Ordering
MJD50 N/A Transistor

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MJD50 N/A High Power, High Voltage, General Purpose

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MJD50-1 N/A High Power, High Voltage, General Purpose

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MJD50T4 N/A High Power, High Voltage, General Purpose

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Central Cross Reference Results

Central Part Industry Part Type Description
CJD50 Buy MJD50 Buy Exact electrical and mechanical. SMD Small Signal Transistor NPN High Voltage

On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
MJD47G Buy MJD50T4 Buy STMicroelectronics Direct
MJD50G Buy 2SC4505 Buy Rohm Close
MJD50G Buy BUJ103AD Buy NXP Semiconductors Close
MJD50G Buy CJD50 Buy Central Semiconductor Close
MJD50G Buy FCX658A Buy Zetex Semiconductors Close
MJD50G Buy FZT658 Buy Zetex Semiconductors Close
MJD50G Buy MJD47 Buy Fairchild Semiconductor Direct
MJD50G Buy MJD50 Buy Fairchild Semiconductor Direct

STMicroelectronics Cross Reference Results

STMicroelectronics Part Industry Part Manufacturer Type Description
MJD50T4 Buy KSC3233 Buy Fairchild Semiconductor Nearest Preferred Power Bipolar - Medium and High Voltage ( > 150 V) Switching Transistors
MJD50T4 Buy KSC5054 Buy Fairchild Semiconductor Nearest Preferred Power Bipolar - Medium and High Voltage ( > 150 V) Switching Transistors
MJD50T4 Buy KSH50 Buy Fairchild Semiconductor Nearest Preferred Power Bipolar - Medium and High Voltage ( > 150 V) Switching Transistors

Misc. Cross Reference Results

Part Similar Part Notes
MJD50-1 Buy 2SC3362 Buy
MJD50-1 Buy 2SC3632 Buy
MJD50T4 Buy 2SC3632 Buy