NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| MJD50 | Fairchild Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR |
2 pages, |
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| MJD50 | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
4 pages, |
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| MJD50 | Fairchild Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR |
3 pages, |
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| MJD50 | Motorola / Freescale Semiconductor | NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
6 pages, |
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| MJD50 | Motorola / Freescale Semiconductor | NPN Silicon Power Transistors 1 Amp 250,400 Volts, 15W |
4 pages, |
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| MJD50 | On Semiconductor | High Voltage Power Transistors |
5 pages, |
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| MJD50 | STMicroelectronics | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
6 pages, |
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| MJD50 | STMicroelectronics | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
6 pages, |
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| MJD50 | Motorola | Motorola Semiconductor Data & Cross Reference Book |
6 pages, |
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| MJD50-1 | Motorola / Freescale Semiconductor | NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
6 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Transistors SMD Type NPN Epitaxial Silicon Transistor MJD47 MJD47;MJD50 +0.15 6.50-0.15 +0.2 , otherwise noted Parameter Collector-Emitter Voltage Rating Unit 350 V MJD50 Collector-Emitter Voltage Symbol 500 V MJD47 MJD47 250 V 400 V MJD47 MJD47 VCBO VCEO MJD50 , ICES MJD50 DC Current Gain * Max VCE = 300V, IB = 0 ICEO MJD50 Emitter Cut-off Current Typ 400 VCEO(sus) MJD50 Collector Cut-off Current Min 250 150 1 10 V ... | Original |
1 pages, |
smd transistor 2A MJD50 MJD47 300V transistor npn 2a npn smd 2a MJD47 abstract |
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| Abstract: Characteristic Symbol Rating Unit Collector Base Voltage : MJD47 MJD47 VcBO 350 V : MJD50 500 V Collector Emitter Voltage : MJD47 MJD47 VcEO 250 V : MJD50 400 V Emitter Base Voltage Vebo 5 V Collector Current (DC) lc 1 A , 250 V : MJD50 400 V Collector Cutoff Current : MJD47 MJD47 IcEO VCE= 150V, lB=0 0.2 mA : MJD50 Vce = 300V, lB=0 0.2 mA Collector Cutoff Current : MJD47 MJD47 Ices Vce= 350, Veb= 0 0.1 mA : MJD50 Vce= ... | OCR Scan |
2 pages, |
TIP50 TIP47 MJD50 MJD47 MJD47/50 MJD47/50 abstract |
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| Abstract: MJD50 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s , ) DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a , January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA R , 150 MHz MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage , MJD50 Switching Time Inductive Load Switching Time Inductive Load Switching Time Inductive Load ... | Original |
6 pages, |
TIP50 application notes TIP50 MJD50 MJD50 abstract |
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| Abstract: MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s SGS-THOMSON PREFERRED , s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD50 is manufactured using Medium , Temperature 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA R t hj-ca se , 150 MHz MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage , MJD50 Switching Time Inductive Load Switching Time Inductive Load Switching Time Inductive Load ... | Original |
6 pages, |
TIP50 MJD50 MJD50 abstract |
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| Abstract: MJD50 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s , "T4") DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology , emperature January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA , MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Capacitance 3/6 MJD50 ... | Original |
6 pages, |
TIP50 MJD50 MJD50 abstract |
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| Abstract: ) 2500 / Tape & Reel 369C MJD50G 369C (Pb-Free) MJD50T4 75 Units / Rail 369C , MJD47 MJD47, MJD50 Preferred Device High Voltage Power Transistors DPAK For Surface Mount , RATINGS Rating Symbol Collector-Emitter Voltage Max VCEO MJD47 MJD47 MJD50 Collector-Base Voltage Vdc 250 400 VCB Vdc 350 500 MJD47 MJD47 MJD50 Emitter-Base Voltage DPAK CASE 369C , ) IEBO Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47 MJD47 MJD50 ... | Original |
4 pages, |
TIP50 MJD47G MJD47T4 MJD47T4G MJD50 MJD47 MJD50T4G TIP47 MJD50T4 MJD50G MJD47 abstract |
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| Abstract: MJD47/50 MJD47/50 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK · Load Formed for Surface Mount Application (No Suffix) · Straight Lead (I.PACK, "- I" Suffix) · Electrically Similar to Popular TIP47 TIP47 and TIP50 TIP50 1 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : MJD47 MJD47 : MJD50 Collector Emitter Voltage : MJD47 MJD47 : MJD50 Emitter Base , : MJD47 MJD47 : MJD50 Collector Cutoff Current : MJD47 MJD47 : MJD50 Collector Cutoff Current : MJD47 MJD47 : MJD50 ... | Original |
3 pages, |
TIP50 TIP47 MJD50 MJD47 MJD47/50 MJD47/50 abstract |
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| Abstract: MAXIMUM RATINGS Rating Symbol MJD47 MJD47 MJD50 Unit Collector-Emitter Voltage VCEO 250 400 Vdc , Collector-Emitter Sustaining Voltage (1) MJD47 MJD47 dC = 30 mAdc, lB = 0) MJD50 VcEO(sus) 250 400 - Vdc Collector Cutoff Current (Vqe = 160 Vdc, Ib = 0) MJD47 MJD47 (Vce = 300 Vdc, lg = 0) MJD50 ICEO - 0.2 0.2 mAdc MJD47 MJD47 MJD50 NPN , b3b75S4 MJD47 MJD47, MJD50 G0êS25â ^ I ELECTRICAL CHARACTERISTICS - continued (Tc = 25°C unless otherwise , Current ices mAdc (Vce = 350 Vdc, VBe = 0) MJD47 MJD47 - 0.1 (Vce = 500 Vdc, Vbe = 0) mjd50 - 0.1 ... | OCR Scan |
4 pages, |
transistor MJD47 TIP50 TIP47 MJD50 MJD47 T-33- T-33- abstract |
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| Abstract: MJD50 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s , ) uc d DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology , January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA R , MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter , ) t( ro P so Ob - Collector-Base Capacitance let o bs O 3/6 MJD50 ... | Original |
6 pages, |
TIP50 MJD50 MJD50 abstract |
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| Abstract: MJD47TF MJD47TF MJD47 MJD47 D-PAK Tape & Reel MJD50TF MJD50 D-PAK Tape & Reel © 2012 Fairchild , otherwise noted Symbol VCBO 1 Value Units Collector-Emitter Voltage : MJD47 MJD47 : MJD50 Parameter 350 500 V V Collector-Emitter Voltage : MJD47 MJD47 : MJD50 250 400 V V VEBO , 0 IC = 30mA, IB = 0 : MJD50 Min. Max. 250 400 Units V V Collector Cut-off Current : MJD47 MJD47 : MJD50 VCE = 150V, IB = 0 VCE = 300V, IB = 0 0.2 0.2 mA mA Collector ... | Original |
5 pages, |
MJD47/50 MJD47/50 abstract |
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| Abstract: ® MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s ) s ( t c u d o ) r s , DPAK TO-252 (Suffix "T4") DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial , 2000 1/6 MJD50 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal , Curves 2/6 MJD50 DC Current Gain DC Current Gain ) s ( t c u d o ) r s ( P t c e t u e d l o o , Collector-Base Capacitance 3/6 MJD50 Switching Time Inductive Load Switching Time Inductive Load ) s ... | Original |
6 pages, |
MJD50 MJD50 abstract |
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| Abstract: ON Semiconductort MJD47 MJD47 * MJD50 * High Voltage Power Transistors DPAK For Surface Mount , MJD47 MJD47 MJD50 Unit VCEO 250 400 Vdc Collector╜Base Voltage VCB 350 500 , , IB = 0) (VCE = 300 Vdc, IB = 0) ICEO MJD47 MJD47 MJD50 mAdc *When surface mounted on minimum , Collector╜Emitter Sustaining Voltage (1) MJD47 MJD47 (IC = 30 mAdc, IB = 0) MJD50 0.063 1.6 OFF CHARACTERISTICS , Vdc, VBE = 0) (VCE = 500 Vdc, VBE = 0) MJD47 MJD47 MJD50 ICES mAdc mAdc OFF CHARACTERISTICS ... | Original |
8 pages, |
TIP50 TIP47 MJD50 MJD47 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| element component template mjd50t4 c b e #* # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE * # Contains Proprietary Information * # Which is The Property of * # SYMMETRY OR ITS LICENSORS * # Modeling services provided by * # Interface Technologies www.i-t.com * #* # MODPEX model for BJT transistor mjd50t4 # Model generated on Dec 18, 2003 electrical c,b,e { # BODY www.datasheetarchive.com/files/on_semiconductor/simulation-models/mjd50t4.sin |
On Semiconductor | 30/03/2009 | 1.11 Kb | SIN | mjd50t4.sin |
| Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 Document 25/01/2000 6 Raw Text Format MJD50 HIGH VOLTAGE FAST The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a Operating Area Derating Curves MJD50 2/6 DC Current Gain Collector-Emitter Saturation Voltage -Base Capacitance MJD50 3/6 Switching Time Inductive Load Switching Time Inductive Load Switching Time www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5290-v3.htm |
STMicroelectronics | 25/05/2000 | 6.63 Kb | HTM | 5290-v3.htm |
| Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 Document Format Size Raw Text Format MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n DESCRIPTION The MJD50 is manufactured using Derating Curves MJD50 2/6 DC Current Gain Collector-Emitter Saturation Voltage Base Switching Time Inductive Load MJD50 4/6 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 2.20 2.40 0 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5290.htm |
STMicroelectronics | 20/10/2000 | 6.93 Kb | HTM | 5290.htm |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 HIGH VOLTAGE FAST Format MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n ST PREFERRED SALESTYPE n HIGH The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged m s, duty cycle 1.5 % Safe Operating Area Derating Curves MJD50 2/6 DC Current Gain Collector Collector-Base Capacitance MJD50 3/6 Switching Time Inductive Load Switching Time Inductive Load Switching www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5290-v2.htm |
STMicroelectronics | 14/06/1999 | 4.92 Kb | HTM | 5290-v2.htm |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 HIGH VOLTAGE FAST Format MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n ST PREFERRED SALESTYPE n HIGH The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged m s, duty cycle 1.5 % Safe Operating Area Derating Curves MJD50 2/6 DC Current Gain Collector Collector-Base Capacitance MJD50 3/6 Switching Time Inductive Load Switching Time Inductive Load Switching www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5290-v1.htm |
STMicroelectronics | 02/04/1999 | 4.96 Kb | HTM | 5290-v1.htm |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .MODEL mjd50t4 npn +IS=7.25559e-11 BF=26.7185 NF=1.5 VAF=25.4206 +IKF=6.11331 ISE=4.74986e-12 NE=3 www.datasheetarchive.com/files/on_semiconductor/simulation-models/mjd50t4.sp3 |
On Semiconductor | 30/03/2009 | 0.95 Kb | SP3 | mjd50t4.sp3 |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 Document Format Size Document Number Date Update Pages Portable Document Format 5290 25/01/2000 6 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/books/all/5290.htm |
STMicroelectronics | 25/05/2000 | 2.72 Kb | HTM | 5290.htm |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 Document Format Size Document Number Date Update Pages Portable Document Format 5290 25/01/2000 6 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/5290-v3.htm |
STMicroelectronics | 20/10/2000 | 2.72 Kb | HTM | 5290-v3.htm |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 Document Format Size Document Number Date Update Pages Portable Document Format 5290 25/01/2000 6 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/5290-v4.htm |
STMicroelectronics | 25/05/2000 | 2.68 Kb | HTM | 5290-v4.htm |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Document Number: 5290 Date Update: 30/09/97 Pages: 6 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/5290-v2.htm |
STMicroelectronics | 14/06/1999 | 0.89 Kb | HTM | 5290-v2.htm |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| MJD50 | N/A | Transistor | |
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| MJD50 | N/A | High Power, High Voltage, General Purpose | |
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| MJD50-1 | N/A | High Power, High Voltage, General Purpose | |
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| MJD50T4 | N/A | High Power, High Voltage, General Purpose | |
| Central Part | Industry Part | Type | Description |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| KSH50 | KSH50 Buy | MJD50 Buy | ON Semiconductor | Close | PowerBJT | NPN Epitaxial Silicon Transistor |
| KSH50 | KSH50 Buy | MJD50T4 Buy | ON Semiconductor | Direct | PowerBJT | NPN Epitaxial Silicon Transistor |
| MJD50TF | MJD50TF Buy | CJD50 Buy | Central Semi | Direct | PowerBJT | NPN Epitaxial Silicon Transistor |
| MJD50TF | MJD50TF Buy | MJD50 Buy | Fairchild | Direct | PowerBJT | NPN Epitaxial Silicon Transistor |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| MJD47G Buy | MJD50T4 Buy | STMicroelectronics | Direct |
| MJD50G Buy | 2SC4505 Buy | Rohm | Close |
| MJD50G Buy | BUJ103AD Buy | NXP Semiconductors | Close |
| MJD50G Buy | CJD50 Buy | Central Semiconductor | Close |
| MJD50G Buy | FCX658A Buy | Zetex Semiconductors | Close |
| MJD50G Buy | FZT658 Buy | Zetex Semiconductors | Close |
| MJD50G Buy | MJD47 Buy | Fairchild Semiconductor | Direct |
| MJD50G Buy | MJD50 Buy | Fairchild Semiconductor | Direct |
| STMicroelectronics Part | Industry Part | Manufacturer | Type | Description |
| MJD50T4 Buy | KSC3233 Buy | Fairchild Semiconductor | Nearest Preferred | Power Bipolar - Medium and High Voltage ( > 150 V) Switching Transistors |
| MJD50T4 Buy | KSC5054 Buy | Fairchild Semiconductor | Nearest Preferred | Power Bipolar - Medium and High Voltage ( > 150 V) Switching Transistors |
| MJD50T4 Buy | KSH50 Buy | Fairchild Semiconductor | Nearest Preferred | Power Bipolar - Medium and High Voltage ( > 150 V) Switching Transistors |
| Part | Similar Part | Notes |