500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 4,500 Best Price : €0.2559 Price Each : €0.2585
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 4,842 Best Price : $0.1870 Price Each : $0.61
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 525 Best Price : €0.2559 Price Each : €0.2585
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1690 Price Each : $0.1848
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.3350 Price Each : $0.63
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.1581 Price Each : €0.1597
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1531 Price Each : $0.1621
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.2529 Price Each : $0.2765
Part : MJD50TF Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : 2,000 Best Price : - Price Each : -
Part : MJD50TF Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : 2,000 Best Price : $0.1976 Price Each : $0.2125
Part : MJD50TF Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.1861 Price Each : €0.2896
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.2150 Price Each : $0.25
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.3550 Price Each : $0.3750
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : 57,500 Best Price : $0.30 Price Each : $0.30
Part : MJD50TF Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.1820 Price Each : $0.1840
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2,360 Best Price : $0.22 Price Each : $0.27
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 20,000 Best Price : $0.34 Price Each : $0.42
Part : MJD50TF Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 16,181 Best Price : $0.21 Price Each : $0.25
Part : NJVMJD50T4G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2,000 Best Price : $0.24 Price Each : $0.29
Part : MJD50T4 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 375 Best Price : $0.2025 Price Each : $0.6750
Part : MJD50T4 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 2,480 Best Price : $0.1470 Price Each : $0.5250
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 1,162 Best Price : - Price Each : -
Part : MJD50G Supplier : ON Semiconductor Manufacturer : RS Components Stock : 1,710 Best Price : £0.27 Price Each : £0.3590
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : RS Components Stock : 836 Best Price : £0.29 Price Each : £0.43
Part : MJD50TF Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 1,320 Best Price : £0.1460 Price Each : £0.1980
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : TME Electronic Components Stock : 1 Best Price : $0.2041 Price Each : $0.3542
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 98 Best Price : $0.2590 Price Each : $0.3340
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 1,589 Best Price : $0.2073 Price Each : $0.3054
Part : MJD50TF Supplier : Fairchild Semiconductor / ON Semiconductor Manufacturer : Chip1Stop Stock : 2,000 Best Price : $0.2233 Price Each : $0.2233
Part : MJD50G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 1 Best Price : $0.22 Price Each : $0.79
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.25 Price Each : $0.2750
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 510 Best Price : $0.23 Price Each : $0.8160
Part : MJD50T4G. Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 3,510 Best Price : $0.23 Price Each : $0.8160
Part : MJD50G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 2,141 Best Price : £0.1630 Price Each : £0.4650
Part : MJD50T4G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 360 Best Price : £0.2520 Price Each : £0.5960
Part : MJD50T4G. Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 3,510 Best Price : £0.2950 Price Each : £0.5540
Shipping cost not included. Currency conversions are estimated. 

MJD50 Datasheet

Part Manufacturer Description PDF Type
MJD50 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
MJD50 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
MJD50 Kexin NPN Epitaxial Silicon Transistor Original
MJD50 Motorola NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS Original
MJD50 ON Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS POWER NPN 1A 400V DPAK Original
MJD50 On Semiconductor High Voltage Power Transistors Original
MJD50 STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Original
MJD50 STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Original
MJD50 TY Semiconductor NPN Epitaxial Silicon Transistor - TO-252 Original
MJD50 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
MJD50 Motorola NPN Silicon Power Transistors 1 Amp 250,400 Volts, 15W Scan
MJD50 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJD50 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
MJD50-1 Motorola NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS Original
MJD50-1 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJD50-1 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
MJD50G On Semiconductor MJD50 - TRANSISTOR 1 A, 400 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, PLASTIC, CASE 369C, DPAK-3, BIP General Purpose Power Original
MJD50G On Semiconductor Bipolar Power DPAK NPN 1A 400V; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Rail; Qty per Container: 75 Original
MJD50-I Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
MJD50I Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
Showing first 20 results.

MJD50

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Transistors SMD Type Product specification MJD47;MJD50 +0.15 6.50-0.15 +0.2 5.30-0.2 , otherwise noted Parameter Collector-Emitter Voltage Rating Unit 350 V MJD50 Collector-Emitter Voltage Symbol 500 V MJD47 250 V 400 V MJD47 VCBO VCEO MJD50 , Gain Bandwidth Product *Pulse Test: PW Unit VCE = 500, VEB = 0 ICES MJD50 DC Current Gain * Max VCE = 300V, IB = 0 ICEO MJD50 Emitter Cut-off Current Typ 400 VCEO TY Semiconductor
Original

MJD47

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD47* MJD50* High Voltage Power Transistors DPAK , Rating Collector-Emitter Voltage MJD47 MJD50 400 Vdc 500 Vdc Unit VCEO 250 , Collector-Emitter Sustaining Voltage (1) MJD47 OC - 30 mAdc, Ià - 0) MJD50 Collector Cutoff Current (V c E -1 5 0 V d c , Ib = 0) (V c e â' 300 Vdc, Ià - 0) MJD47 MJD50 â'" mAdc 0.2 0.2 * When , MJD47 MJD50 ELECTRICAL CHARACTERISTICS - continued (Tq . 25°C unless otherwise noted) Symbol
-
OCR Scan
TIP47 TIP50

transistor 228 T3

Abstract: A 673 transistor Rating Symbol MJD47 MJD50 Unit Collector-Emitter Voltage VCEO 250 400 Vdc Collector-Base Voltage VCB , Collector-Emitter Sustaining Voltage (1) MJD47 (IC = 30mAdc, Ib = 0) MJD50 VcEO(sus) 250 400 â'" Vdc Collector Cutoff Current ICEO mAdc (Vce= 150 Vdc, Ib = 0) MJD47 _ 0.2 (Vqe = 300 Vdc, Ib = 0) MJD50 â'" 0.2 MJD47* MJD50* 'Motorola Preferred Device NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 , value. REV 1 - fM) MOTOROLA > Motorola, Inc. 1995 MJD47 MJD50 ELECTRICAL CHARACTERISTICS -
-
OCR Scan
transistor 228 T3 A 673 transistor 369A-13 MJD47/D
Abstract: : Pulse Width v 300 ms, Duty Cycle v 2%. ORDERING INFORMATION Device MJD47 MJD47T4 MJD50 MJD50T4 , MJD47, MJD50 Preferred Device High Voltage Power Transistors DPAK For Surface Mount , Collector-Emitter Voltage MJD47 MJD50 Collector-Base Voltage MJD47 MJD50 Emitter-Base Voltage Collector Current - , ) MJD47 MJD50 VCEO(sus) Vdc 250 400 - - MJD47, MJD50 - ICEO mAdc MJD47 MJD50 - - 0.2 , Current (VBE = 5 Vdc, IC = 0) ICES mAdc MJD47 MJD50 - - 0.1 0.1 1 IEBO mAdc ON ON Semiconductor
Original

MJD50

Abstract: TIP50 MJD50 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s , ) uc d DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology , January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA R , MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter , ) t( ro P so Ob - Collector-Base Capacitance let o bs O 3/6 MJD50
STMicroelectronics
Original
P032P

MJD47

Abstract: MJD50 ON Semiconductort MJD47 * MJD50 * High Voltage Power Transistors DPAK For Surface Mount , MJD47 MJD50 Unit VCEO 250 400 Vdc Collector­Base Voltage VCB 350 500 , 300 Vdc, IB = 0) ICEO MJD47 MJD50 mAdc - - *When surface mounted on minimum pad , Collector­Emitter Sustaining Voltage (1) MJD47 (IC = 30 mAdc, IB = 0) MJD50 0.063 1.6 OFF CHARACTERISTICS , Vdc, VBE = 0) (VCE = 500 Vdc, VBE = 0) MJD47 MJD50 ICES mAdc mAdc OFF CHARACTERISTICS
ON Semiconductor
Original

MJD50G

Abstract: MJD50T4 ) 2500 / Tape & Reel 369C MJD50G 369C (Pb-Free) MJD50T4 75 Units / Rail 369C , MJD47, MJD50 Preferred Device High Voltage Power Transistors DPAK For Surface Mount , RATINGS Rating Symbol Collector-Emitter Voltage Max VCEO MJD47 MJD50 Collector-Base Voltage Vdc 250 400 VCB Vdc 350 500 MJD47 MJD50 Emitter-Base Voltage DPAK CASE 369C , ) IEBO Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47 MJD50
ON Semiconductor
Original
MJD47G MJD47T4G BRD8011/D

MJD50

Abstract: TIP50 MJD50 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s , ) DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a , January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA R , 150 MHz MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage , MJD50 Switching Time Inductive Load Switching Time Inductive Load Switching Time Inductive Load
STMicroelectronics
Original
TO252-DPAK TIP50 application notes

npn smd 2a

Abstract: MJD50 Transistors SMD Type NPN Epitaxial Silicon Transistor MJD47;MJD50 +0.15 6.50-0.15 +0.2 , otherwise noted Parameter Collector-Emitter Voltage Rating Unit 350 V MJD50 Collector-Emitter Voltage Symbol 500 V MJD47 250 V 400 V MJD47 VCBO VCEO MJD50 , Gain Bandwidth Product *Pulse Test: PW Unit VCE = 500, VEB = 0 ICES MJD50 DC Current Gain * Max VCE = 300V, IB = 0 ICEO MJD50 Emitter Cut-off Current Typ 400 VCEO
Kexin
Original
npn smd 2a 300V transistor npn 2a smd transistor 2A

MJD47

Abstract: MJD50 VCBO VCEO Parameter Collector-Emitter Voltage : MJD47 : MJD50 Value 350 500 V V 250 400 Collector-Emitter Voltage : MJD47 : MJD50 Units V V VEBO Emitter-Base , ) Parameter * Collector-Emitter Sustaining Voltage : MJD47 : MJD50 ICEO Test Condition IC = 30mA, IB = 0 Min. 250 400 Max. Units V V Collector Cut-off Current : MJD47 : MJD50 0.2 0.2 mA mA : MJD47 : MJD50 ICES VCE = 150V, IB = 0 VCE = 300V, IB = 0 VCE = 350, VEB =
Fairchild Semiconductor
Original
MJD47/50

MJD50

Abstract: TIP50 MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s SGS-THOMSON PREFERRED , s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD50 is manufactured using Medium , Temperature 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA R t hj-ca se , 150 MHz MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage , MJD50 Switching Time Inductive Load Switching Time Inductive Load Switching Time Inductive Load
STMicroelectronics
Original
0068772-B

MJD50

Abstract: TIP50 MJD50 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s , "T4") DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology , emperature January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD50 THERMAL DATA , MJD50 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Capacitance 3/6 MJD50
STMicroelectronics
Original

transistor s46

Abstract: t337 motorola Collector Current MAXIMUM RATINGS Rating Symbol MJD47 MJD50 Unit Collector-Emitter Voltage VCEO 250 400 , CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) MJD47 dC = 30 mAdc, lB = 0) MJD50 VcEO(sus) 250 400 â'" Vdc Collector Cutoff Current (Vqe = 160 Vdc, Ib = 0) MJD47 (Vce = 300 Vdc, lg = 0) MJD50 ICEO - 0.2 0.2 mAdc MJD47 MJD50 NPN SIUCON POWER TRANSISTORS 1 AMPERE 250,400 VOLTS 15 WATTS CASE 369A-04 , Manufacturer MOTOROLA SC XSTRS/R F 12E D J b3b75S4 MJD47, MJD50 G0êS25â ^ I ELECTRICAL CHARACTERISTICS â
-
OCR Scan
transistor s46 t337 motorola transistor MJD47 T-33- Y115M M-0051 19S2- MJD47-T
Abstract: Device MJD47G MJD47T4G NJVMJD47T4G MJD50G MJD50T4G Package 369C (Pb-Free) 369C (Pb-Free) 369C (Pb-Free , MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK for Surface Mount Applications , Voltage MJD47, NJVMJD47T4G MJD50 Collector-Base Voltage MJD47, NJVMJD47T4G MJD50 Emitter-Base Voltage , Publication Order Number: MJD47/D MJD47, NJVMJD47T4G, MJD50 THERMAL CHARACTERISTICS Characteristic , Collector-Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) MJD47, NJVMJD47T4G MJD50 Collector Cutoff ON Semiconductor
Original
AEC-Q101
Abstract: Parameter Collector-Emitter Voltage : MJD47 : MJD50 Collector-Emitter Voltage : MJD47 : MJD50 Emitter-Base , : MJD47 : MJD50 Collector Cut-off Current : MJD47 : MJD50 ICES Collector Cut-off Current : MJD47 : MJD50 , 0µ PC[W], POWER DISSIPATION 1000 s 15 1m s 0.1 10 0.01 MJD47 MJD50 , Production ©2001 Fairchild Semiconductor Corporation Rev. H3 Product Folder - Fairchild P/N MJD50 - , Semiconductor space space space space space space >> Find products >> Home find products space space space MJD50 Fairchild Semiconductor
Original
MJD47TF
Abstract: ® MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s ) s ( t c u d o ) r s , DPAK TO-252 (Suffix "T4") DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial , 2000 1/6 MJD50 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal , Curves 2/6 MJD50 DC Current Gain DC Current Gain ) s ( t c u d o ) r s ( P t c e t u e d l o o , Collector-Base Capacitance 3/6 MJD50 Switching Time Inductive Load Switching Time Inductive Load ) s STMicroelectronics
Original

MJD47

Abstract: MJD47G / Rail 369C MJD47T4G MJD50 369C (Pb-Free) 2500 / Tape & Reel 369C MJD50G 369C (Pb-Free) MJD50T4 75 Units / Rail 369C MJD50T4G 369C (Pb-Free) 2500 / Tape & Reel For , MJD47, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications D e s i g n e d , MJD50 MJD47 MJD50 Emitter-Base Voltage VCEO VCB 3 Max Unit Vdc 250 400 , Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47 MJD50 Collector
ON Semiconductor
Original

TIP50 application notes

Abstract: TIP50 ) 2500 / Tape & Reel 369C MJD50G 369C (Pb-Free) MJD50T4 75 Units / Rail 369C , MJD47, MJD50 Preferred Device High Voltage Power Transistors DPAK For Surface Mount , 2 3 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Max VCEO MJD47 MJD50 Collector-Base Voltage Vdc 250 400 VCB Vdc 350 500 MJD47 MJD50 Emitter-Base Voltage DPAK , ) IEBO Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47 MJD50
ON Semiconductor
Original

MJD50

Abstract: MJD47 Characteristic Symbol Rating Unit Collector Base Voltage : MJD47 VcBO 350 V : MJD50 500 V Collector Emitter Voltage : MJD47 VcEO 250 V : MJD50 400 V Emitter Base Voltage Vebo 5 V Collector Current (DC) lc 1 A , , lB= 0 250 V : MJD50 400 V Collector Cutoff Current : MJD47 IcEO VCE= 150V, lB=0 0.2 mA : MJD50 Vce = 300V, lB=0 0.2 mA Collector Cutoff Current : MJD47 Ices Vce= 350, Veb= 0 0.1 mA : MJD50
-
OCR Scan
0J52

T2500M

Abstract: ic iß pd MJD47 250 350 5 MJD50 400 500 Unit Vdc Vdc Vdc Ade Ade Watts W/°C Watts W/°C °C M , MJD50 MJD47 MJD50 VcEO(sus) ICEO 250 400 - - - Vdc mAdc 1.6 0.063 2.3 M in M ax Unit 0.2 , D | b3fe,?aS4 G 0 ê S 2 5 â 3 3 - T | MJD47, MJD50 T 0 7 ELECTRICAL CHARACTERISTICS - , MJD50 , | b 3 b 7 S S 4 D âS 2 S cï Q | MJD47, MJD50 Figu re 3. D C C u rre n t G a in F igu re 4. "
-
OCR Scan
T2500M CL24S MJD47-1

NJVMJD47T4G

Abstract: MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications , Collector-Emitter Voltage MJD47, NJVMJD47T4G MJD50 Collector-Base Voltage MJD47, NJVMJD47T4G MJD50 Emitter-Base , , NJVMJD47T4G, MJD50 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction-to-Case Thermal , Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) MJD47, NJVMJD47T4G MJD50 VCEO(sus) 250 400 - 2. These , Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47, NJVMJD47T4G MJD50 MJD47
ON Semiconductor
Original
Showing first 20 results.