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Part : MJ-4647 Supplier : - Manufacturer : Chip One Exchange Stock : 178 Best Price : - Price Each : -
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MJ4647 Datasheet

Part Manufacturer Description PDF Type
MJ4647 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJ4647 Motorola Switchmode Datasheet Scan
MJ4647 Motorola Semiconductor Data Library Volume 3 1974 Scan
MJ4647 Motorola European Master Selection Guide 1986 Scan
MJ4647 N/A Shortform Transistor PDF Datasheet Scan
MJ4647 N/A Shortform Transistor PDF Datasheet Scan
MJ4647 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MJ4647 N/A Semiconductor Master Cross Reference Guide Scan
MJ4647 N/A Shortform Transistor Datasheet Guide Scan

MJ4647

Catalog Datasheet MFG & Type PDF Document Tags

BC 939 Transistor Data

Abstract: MJ4647 bol VcEO VCB Ve b ic PD Tj, MJ4646 300 300 5.0 0.5 1.0 5.0 28.6 - 6 5 to +20 0 MJ4647 400 400 Unit Vdc , 3-538 S- MOTORCLA SC XSTRS/R F 12E D | b3b72S4 0 0 6 4 ^ 4 T Q | MJ4646, MJ4647 ' 3 , ) MJ4646 MJ4647 Collector-Base Breakdown Voltage ( I C a 1 0 0 #xAdc, I e = 0 ) MJ4646 MJ4647 Emitter-Base , mAdc, I q = 100 mAdc) M J4646 MJ4647 D Y N A M IC C H A R A C T E R IS T IC S Current-Gain-Bandwidth , ) MJ4647 S W IT C H IN G C H A R A C T E R IS T IC S Delay Tim e Rise Tim e Turn-Off Tim e ( V c c = 1 00
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OCR Scan
BC 939 Transistor Data MI4647 Y145MJ962

MJ5416

Abstract: MJ4647 mAdc, lB - 100 mAdc) MJ4645 - 0.5 1.0 MJ4646 - 0.6 1.2 MJ4647. MJ4648 - 0.75 1.5 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product llC = 70 mAdc, VCE = 20 Vdc, f » 20 MHz) MJ4645, MJ4646 MJ4647 , MJ4645 MJ4646 MJ4647 MJ4648 Unit Collector-Emitter Voltage VCEO 200 300 400 350 Vdc Collector-Base , MJ4646 300 - - MJ4647 400 - - MJ4648 350 - - Collector-Base Breakdown Voltage bvcb0 Vdc (lc - 100(iAdc, lE = 0) MJ4645 200 - - MJ4646 300 - - MJ4647 400 - - MJ4648 350 - -
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OCR Scan
MJ5416 2N3439 AN-415

2SA566

Abstract: 2SA816-Y BFT44 ZTX557 MJ4648 MJ4648 MJ4647 MJ4647 MJ4647 ,;:)1\ lOON 2SA1400Z 2SA1400Z 2SA1156M 2SA1156K PZT2907
Short Form Catalog
Original
2SA566 2SA816 2SA816Y 2SA13560 2SA816-Y 2sa8160 40319 2SB1007 2SB1189 2SB889 2SB910M

2N5339

Abstract: 2N6191 POWER TRANSISTORS â'" BIPOLAR METAL (continued) TO-39 Package CASE 79-02 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR (Pin 3 connected to case) Resistive Switching ts t, h PD (Case) lcCont VcEO (sus) Device Type hFE @ le US US @ lc MHZ Watts Amps Max Volts Min NPN PNP Min/Max Amp Max Max Amp Min @ 25°C 0.5 300 MJ4646 20 min 0.5 0.72* 0.05 40 5 400 MJ4647 20 min 0.5 0.72* 0.05 30 5 5 60 MJ8100 25/180 2 1 0.15 2 30 10 80 2N5337 2N6191 60/240 2 2 0.2 2 30 6 100 2N5338
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OCR Scan
2N5339 2N6193

2N5345

Abstract: MJ4647 MOTOROLA SC -CDIODES/OPTOJ 3M » F lt.3 t.7 S S S 0037=135 6 6367255 MOTOROLA SC ( D IO D E S /O P T O ) 34C 37935 D SILICON POWER TRANSISTOR DICE (continued) ,q j DIE NO. LINE SOURCE - PL500.77 2C5345 This die provides performance equal to or better than that of the following device types: 2N5344 2N5345 MJ4645 MJ4646 MJ4647 MJ4648 Designed for highvoltage switching and amplifier applications. METALLIZATION - Top
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OCR Scan
SILICON DICE motorola transistor motorola

MJE13005A

Abstract: MJ4361 STI Type: MJ4647 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 400 VCER: 400 ICBO: 400 , -39 Industry Type: MJ4647 STI Type: 2N6315 Notes: Polarity: NPN Power Dissipation: 90 VCBO: 60 VCER: 60
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Original
MJE13005A MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ13330 MJ13101 MJ13331 MJ13333 MJ13332 2N6298

MLED96

Abstract: BRX49 SCR MJ3000 MJ3041 MJ3281A MJ413 MJ423 MJ4502 MJ4646 MJ4647 MJ6308 MJ6503 MJ802 MJ900 MJ901
Motorola
Original
ATV5030 MLED96 BRX49 SCR MRF549 MRF660 MRF548 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1

sc 6038

Abstract: mps-u (Case) Watts @ 25°C MJ4646 20 min 0.5 0.72* 0.05 40 5 MJ4647 20 min 0.5
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OCR Scan
sc 6038 mps-u MOTOROLA 527 33A MJE520 mje13006 MJE12007 T0-204A 340D-01 MJ11021

la 4440 amplifier circuit diagram 300 watt

Abstract: DA 3807 pdf transistor 2N4930 MJ4645 2K14931 MJ4646 MJ4647 55B 300 400 40 1 2N3110 2N3244 2N3467 2N3245
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la 4440 amplifier circuit diagram 300 watt DA 3807 pdf transistor diode LT 7229 2sd323 epitaxial mesa LA 4301 AN-466 AN-568 AN-784A

powec rm 1110

Abstract: rm 1100 powec MJH16006 MJ16008 MJH16008 MJ16006A MJ16010A MJ16014 MJ16016 MJ4646 MJ4647 MJ6308 MJ6503 MJD148
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powec rm 1110 rm 1100 powec transistors JX 6822 A MPC1000 PL 15Z DIODE germanium transistor MZ5558 Z5555 Z5556 MZ5557

2N4895

Abstract: epitaxial mesa STI Type: MJ4647 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 400 VCER: 400 ICBO: 400 , -39 Industry Type: MJ4647 STI Type: 2N6315 Notes: Polarity: NPN Power Dissipation: 90 VCBO: 60 VCER: 60
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OCR Scan
2N4895 Germanium drift transistor halbleiter index transistor transistor BD222 transistor sec tip31A S-10272 YU-41000 CH-8105
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