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MJ410 Datasheet

Part Manufacturer Description PDF Type
MJ410 Motorola 5 AMPERE POWER TRANSISTOR NPN SILICON Original
MJ410 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJ410 Motorola The European Selection Data Book 1976 Scan
MJ410 Motorola Semiconductor Data Library Volume 3 1974 Scan
MJ410 Motorola European Master Selection Guide 1986 Scan
MJ410 N/A Shortform Transistor PDF Datasheet Scan
MJ410 N/A Transistor Replacements Scan
MJ410 N/A Transistor Replacements Scan
MJ410 N/A Transistor Replacements Scan
MJ410 N/A Transistor Replacements Scan
MJ410 N/A Transistor Replacements Scan
MJ410 N/A Semiconductor Master Cross Reference Guide Scan
MJ410 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MJ410 N/A Shortform Transistor Datasheet Guide Scan
MJ410 Semiconductor Technology NPN High Voltage Power Transistors in TO-3 and TO-220 Case Outline Scan
MJ4101 Motorola Motorola Semiconductor Datasheet Library Scan
MJ4101 N/A Basic Transistor and Cross Reference Specification Scan
MJ4101 N/A Shortform Transistor PDF Datasheet Scan
MJ4101 N/A Semiconductor Master Cross Reference Guide Scan
MJ4101 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
Showing first 20 results.

MJ410

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: '" VcEO = 200 Volts - MJ410 300 Volts - MJ411 â'¢ DC Current Gain Specified @ 1.0 and 2.5 Adc â'¢ Low Collector-Emitter Saturation Voltage - VcE(sat) =0.8 Vdc@lc= 1.0 Adc MAXIMUM RATINGS Rating Symbol MJ410' MJ41 , ACCEP WHEN S Vce > RATEO. VCEO- AT 1c = 100 m A \ J \ MJ410â'"â'¢ , MJ410 (SILICON) MJ411 HIGH VOLTAGE NPN SILICON TRANSISTORS . . . designed for medium to high , | OFF CHARACTERISTICS_ Collector-Emitter Sustaining Voltage (IC=- lOOmAdc, lB -01 MJ410 MJ411 vCE0 -
OCR Scan
AN-4151 mj411 transistor of IC 4151 MJ411-
Abstract: Voltage NPN Silicon Transistors MJ410 SEMICONDUCTOR TECHNICAL DATA Order this document by MJ410/D MOTOROLA MJ410 IC, COLLECTOR CURRENT (AMP) 10 5.0 ms 5.0 500 us 1.0 ms , . Sustaining Voltage Test Circuit Motorola Bipolar Power Transistor Device Data MJ410 PACKAGE , MJ410 Motorola reserves the right to make changes without further notice to any products herein , Device Data *MJ410/D* MJ410/D Motorola Motorola
Original
NPN 200 VOLTS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor 400 volts.50 amperes MJ410/D
Abstract: SavantIC Semiconductor Product Specification MJ410 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High collector-emitter voltage ·Low collector saturation voltage APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits , junction to case MAX UNIT 0.75 /W SavantIC Semiconductor Product Specification MJ410 , ) 3 MJ410 - -
Original
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ410/D MJ410 High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. · · · High C ollector-Em itter Voltage - V c E O = 200 Volts DC Current Gain Specified , ) ft 2.5 - MHz > M o t o r o la , In c . 1 9 9 5 fM) MOTOROLA MJ410 - 5.0 m s^ CURRENT , Test Circuit 2 Motorola Bipolar Power Transistor Device Data MJ410 PACKAGE DIMENSIONS F -
OCR Scan
Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ410 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 200V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 0.8V(Max)@ IC= 1A APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER , INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ410 ELECTRICAL CHARACTERISTICS TC INCHANGE Semiconductor
Original
transistor Ic 1A datasheet NPN 200V transistor npn 2a 200V 100MA NPN
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. · High Collector­Emitter Voltage - VCEO = 200 Volts · DC Current Gain Specified @ 1.0 and 2.5 Adc · Low Collector­Emitter Saturation Voltage - VCE(sat) = 0.8 Vdc @ IC = 1.0 Adc MAXIMUM RATINGS MJ410 5 AMPERE POWER TRANSISTOR , Power Transistor Device Data 3­417 MJ410 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 Motorola
Original
TIP36 BD413 2SC331 BD139.6 BD139.16 BD139.10 MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011
Showing first 20 results.