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Part : MJ-25.000-12-30/30/-40+85 Supplier : Mercury Electronic Ind Manufacturer : Newark element14 Stock : - Best Price : $0.8540 Price Each : $1.47
Part : MJ2500D Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 132 Best Price : $2.9118 Price Each : $6.72
Part : MJ2500 Supplier : Motorola Manufacturer : basicEparts Stock : 100 Best Price : - Price Each : -
Part : MJ-25.000-12-30/30/-40+85 Supplier : Mercury Electronic Ind Manufacturer : element14 Asia-Pacific Stock : 87 Best Price : $0.88 Price Each : $1.8240
Part : MJ-25.000-12-30/30/-40+85 Supplier : Mercury Electronic Ind Manufacturer : element14 Asia-Pacific Stock : 87 Best Price : $0.88 Price Each : $1.8240
Part : MJ-25.000-12-30/30/-40+85 Supplier : Mercury Electronic Ind Manufacturer : Farnell element14 Stock : 87 Best Price : £0.5880 Price Each : £0.79
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MJ2500 Datasheet

Part Manufacturer Description PDF Type
MJ2500 Central Semiconductor Power Transistors Original
MJ2500 Comset Semiconductors Silicon Epitaxial Base Darlington Original
MJ2500 Motorola 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS Original
MJ2500 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package Original
MJ2500 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan
MJ2500 Crimson Semiconductor EPITAXIAL BASE Transistor Scan
MJ2500 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
MJ2500 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJ2500 Motorola The European Selection Data Book 1976 Scan
MJ2500 Motorola Semiconductor Data Library Volume 3 1974 Scan
MJ2500 N/A Basic Transistor and Cross Reference Specification Scan
MJ2500 N/A Transistor Replacements Scan
MJ2500 N/A Shortform Transistor PDF Datasheet Scan
MJ2500 N/A Transistor Replacements Scan
MJ2500 N/A Transistor Replacements Scan
MJ2500 N/A Transistor Replacements Scan
MJ2500 N/A Cross Reference Datasheet Scan
MJ2500 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MJ2500 N/A Semiconductor Master Cross Reference Guide Scan
MJ2500 N/A Shortform Data and Cross References (Misc Datasheets) Scan
Showing first 20 results.

MJ2500

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power , IC=0 @ TC < 25° Value MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 Page 1 of 3 Unit 60 Vdc 80 60 Vdc 80 5.0 , Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.17 MJ2500 MJ3000 MJ2501 Comset Semiconductors
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MJ3001 equivalent transistor mj3001
Abstract: SavantIC Semiconductor Product Specification MJ2500/2501 Silicon PNP Power Transistors , (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS MJ2500 , MJ2500 Collector-emitter voltage UNIT -60 Open emitter MJ2501 VCEO VALUE V -80 , temperature -55~200 TC=25 SavantIC Semiconductor Product Specification MJ2500/2501 Silicon , PARAMETER Collector-emitter breakdown voltage CONDITIONS MJ2500 MIN TYP. MAX UNIT -60 -
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ic 2501 3001 pnp MJ3000 equivalent MJ2500/2501 MJ3000/3001
Abstract: MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN SILICON EPITAXIAL-BASE DARLINGTON The MJ2500, and , Symbol Ratings Value MJ2500 MJ3000 VCBO Collector-Base Voltage 60 Vdc IE=0 MJ2501 MJ3001 Collector-EmitterVoltage 80 MJ2500 MJ3000 VCEO 60 Vdc IB=0 MJ2501 MJ3001 VEBO Emitter-Base Voltage IC Collector Current IC=0 Unit MJ2500 MJ3000 MJ2501 MJ3001 MJ2500 MJ3000 MJ2501 MJ3001 COMSET SEMICONDUCTORS 80 5.0 Vdc 10 Adc 1/4 Comset Semiconductors
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Abstract: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon , MJ2500 MJ2501 PNP MJ3000 MJ3001 V CBO Collector-base Voltage (IE = 0) 60 80 V , are negative. October 1995 1/4 MJ2500/MJ2501/MJ3000/MJ3001 THERMAL DATA R thj -ca se , (sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) T est Con ditio ns for MJ2500 STMicroelectronics
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P003N MJ2500/MJ2501 MJ2500/MJ2501/MJ3000/MJ3001
Abstract: SGS-THOMSON MJ2500/MJ2501 MJ3000/MJ3001 ÃLieTO ffäD l O O COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500 , Voltage (I b = 0) V ebo MJ2500 NPN Emitter-base Voltage (lc = 0) ( Ie = 0) 60 5 V , 7 ^ 2 3 7 â¡ â¡ 7 tì m E 425 MJ2500/MJ2501/MJ3000/MJ3001 THERMAL DATA â Â«thj-case , Current ( I b = 0) Test Conditions for MJ2500 and V ce = 60 V for MJ2501 and V ce = 80 V T case = -
OCR Scan
MJ250C MJ2501/MJ3000/MJ3001
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ2500/D M J2955 (See 2N 3055 , Junction Temperature Range Symbol v CEO V CB Veb ic Iß Pd MJ2500 MJ3000 60 60 5.0 10 0.2 MJ2501 , future use and best overall value. REV 7 © M otorola, Inc. 1995 ftf) M O TO R O LA MJ2500 , Rb e = = = = 1 1 1 1 0 0 0 0 k k k k ohm) ohm) ohm, T q = 150°C) ohm, T q = 150°C) MJ2500, M J2501, MJ2500, M J2501, M J3000 MJ3001 M J3000 MJ3001 'e b o MJ2500, M J3000 M J2501, MJ3001 'CEO MJ2500, M -
OCR Scan
j3001 motorola MJ3000 transistor 2N 3055 2N3055M transistor Amp 3055 2n 3055 transistor MJ2500/D J2955A J2500 J3001
Abstract: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon , = 0) Collector Current Base Current Total Dissipation at T c 25 C o Value MJ2500 MJ3000 60 60 5 , . June 1996 1/4 MJ2500/MJ2501/MJ3000/MJ3001 THERMAL DATA R t hj-ca se Thermal Resistance , ) Symb ol I CER Parameter Collector Cut-off Current (R BE = 1 K ) Test Cond ition s for MJ2500 an d STMicroelectronics
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AIN60
Abstract: GÌ SCS-THOMSON \\L[ MJ2500/MJ2501 _MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are , RATINGS Symbol Parameter Value Unit PNP MJ2500 MJ2501 NPN MJ3000 MJ3001 VcBO Collector-base , MJ2500/MJ2501/MJ3000/MJ3001 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.17 °C/W , . Typ. Max. Unit ICER Collector Cut-off Current (Rbe = 1 Kii) for MJ2500 and MJ3000 VCE = 60 V for -
OCR Scan
diagram DARLINGTON 7TETE37 MJ250QTMJ2501/MJ3000/MJ3001
Abstract: Adc Monolithic Construction with Built-in Base-Emitter Shunt Resistors MJ2500 MJ2501* NPN MJ3000 , MJ2500 MJ3000 60 60 5.0 10 0.2 MJ2501 MJ3001 80 80 Unit Vdc Vdc Vdc Adc Adc ic 'B 10 , 3-425 MJ2500 MJ2501 MJ3000 MJ3001 ELECTRICAL CHARACTERISTICS (T c * 25°C unless otherwise noted , ( lc * Symbol Min Max Unit MJ2500, MJ3000 MJ2501, MJ3001 V(BR)CEO 60 80 - Vdc - mAdc ICER MJ2500, MJ3000 MJ2501, MJ3001 MJ2500, MJ3000 MJ2501.MJ3001 'EBO MJ2500, MJ3000 -
OCR Scan
MJ3000 circuit transistor MJ2501
Abstract: Circuit Schematic EMITTER [ 2.0 k [ 50 BASE PNP MJ2500 MJ2501 EMITTER [ 2.0 k [ 50 BASE , CHARACTERISTICS Operating and Storage Junction Temperature Range Symbol MJ2500 MJ3000 MJ2501 MJ3001 , Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose , ) MJ2955A MJ2955 (See 2N3055) SEMICONDUCTOR TECHNICAL DATA Order this document by MJ2500/D , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJ2500 MJ2501 Motorola
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2n3055 motorola npn darlington transistor 150 watts 2N3055A 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055* motorola 2N3055A
Abstract: . on _ â'"_SCS-THOMSON 816 SGS-THOMSON MJ2500/2501 T# iMimifgTOMS MJ3000/3001 COMPLEMENTARY POWER DARLINGTONS lESCRiPTiON I he MJ2500, MJ2501, MJ3000 and MJ3001 are si-con epitaxial-base transistors in , power linear and switching applications. I he PNP types are the MJ2500 and MJ2501 and :heir , NPN Value Unit MJ2500 MJ3DO0 MJ25D1 MJ3001 VcBO Collector-base Voltage (Ie =0) 60 80 V VceO , . December 1988 1/2 817 MJ2500/2501 -M J3000/3001 THERMAL DATA Rth ¡-easa | Thermal Resistance Junction-case -
OCR Scan
MJ900 MJ901 MJ1000 MJ1001 B 817 c 2N6053 MJ1000/1001 MJ900/901-MJ1000/1001
Abstract: MJ2500 MJ2501 PNP MJ3000 MJ3001 NPN " 'il I TM Central Semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 SILICON COMPLEMENTARY TRANSISTORS POWER DARLINGTON 10 AMPERES, 60-80 VOLTS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ2500, MJ3000 Series are medium - power , complementary output devices. MAXIMUM RATINGS (TC=25°C) MJ2500 MJ2501 SYMBOL MJ3000 MJ3001 UNIT , 0JC 1 .17 OC/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) MJ2500 MJ2501 MJ3000 -
OCR Scan
Abstract: MJ2500, MJ2501 PNP (SILICON) MJ3000, MJ3001 NPN MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS , MAXIMUM RATINGS Rating Symbol MJ2500 MJ3000 MJ2501 MJ3001 Unit Collector-Emitter Voltage VCEO 60 80 , 403 MJ2500, MJ2501, MJ3000, MJ3001 (continued) Characteristic . Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage) 1) i»c " 100 mAdc, lB - 0) MJ2500, M J3000 M J2501 , " 0) |Vc6 " 40 Vdc, Ib » 0) MJ2500, M J3000 MJ2501, MJ3001 'CEO - 1.0 1.0 mAdc ON CHARACTERISTICS -
OCR Scan
AN-415 TRANSISTOR 2SC 635 j-2500
Abstract: MJ2500, MJ2501, MJ3000, MJ3001 (continued) Characteristic . Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage) 1) i»c " 100 mAdc, lB - 0) MJ2500, M J3000 M J2501. MJ3001 8VCEO 60 80 - Vdc Collector Emitter Leakage Current , " 0) |Vc6 " 40 Vdc, Ib » 0) MJ2500, M J3000 MJ2501, MJ3001 'CEO - 1.0 1.0 mAdc ON CHARACTERISTICS -
OCR Scan
Abstract: SGS-THOMSON RflDeiRi® IILiera© [S!lD(ei MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington , negative. June 1996 1/4 MJ2500/MJ2501 MJ3000M J3001 THERMAL DATA R·thj-ca se T h e rm a l , iniieH ies £ZT SCS-THOMSON 3/4 MJ2500/MJ2501 MJ3000M J3001 Information furnished is believed -
OCR Scan
Abstract: MJ2500, MJ2501 PNP (SILICON) MJ3000, MJ3001 NPN MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 150 WATTS â'¢ High DC Current Gain - hfE = 4000 (Typ) @ Iq = 6.0 Adc â'¢ Monolithic Construction with Built-in Base-Emitter Shunt Resistors MAXIMUM RATINGS Rating Symbol MJ2500 MJ3000 MJ2501 MJ3001 Unit Collector-Emitter Voltage VCEO 60 80 -
OCR Scan
2SC 1177
Abstract: MJ2500 Transistors PNP Darlington Transistor Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200Ãu I(CBO) Max. (A)400uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain. @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)3.0 f(T) Min. (Hz) Transition Freq1.0M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test American Microsemiconductor
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Abstract: MJ2500 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 10A 7.92 (0.312) 12.70 (0.50) All Semelab Semelab
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Abstract: Inchange Semiconductor Product Specification MJ3000/3001 Silicon NPN Power Transistors DESCRIPTION With TO-3 package DARLINGTON High DC current gain Complement to type MJ2500/2501 APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol TOR UC Absolute maximum ratings(Ta=) SYMBOL VCBO PARAMETER E SEM -
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2501 datasheet
Abstract: MJ2500 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can Semelab
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Abstract: Base­Emitter Shunt Resistors MJ2500 MJ2501* NPN PNP MJ3000 MJ3001* *Motorola Preferred Device , MJ2500 MJ3000 60 60 MJ2501 MJ3001 80 80 Unit Vdc Vdc Vdc Adc Adc Collector­Emitter Voltage Collector­Base , , Junction to Case 1.17 _C/W CASE 1­07 TO­204AA (TO­3) PNP MJ2500 MJ2501 COLLECTOR NPN , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ MJ2500 MJ2501 MJ3000 MJ3001 , Max Unit Collector Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) MJ2500, MJ3000 MJ2501, MJ3001 Eupec
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FD 1200
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