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LTC1093MILDWF#PBF Linear Technology IC 6-CH 10-BIT PROPRIETARY METHOD ADC, SERIAL ACCESS, UUC16, DIE-16, Analog to Digital Converter visit Linear Technology - Now Part of Analog Devices
LTC1297J8 Linear Technology IC 1-CH 12-BIT PROPRIETARY METHOD ADC, CDIP8, HERMETIC SEALED, CERDIP-8, Analog to Digital Converter visit Linear Technology - Now Part of Analog Devices
LTC1594LS16#TR Linear Technology IC 4-CH 12-BIT PROPRIETARY METHOD ADC, SERIAL ACCESS, PDSO16, SO-16, Analog to Digital Converter visit Linear Technology - Now Part of Analog Devices
LTC1594LS16 Linear Technology IC 4-CH 12-BIT PROPRIETARY METHOD ADC, SERIAL ACCESS, PDSO16, SO-16, Analog to Digital Converter visit Linear Technology - Now Part of Analog Devices
LTC1093MILDWF Linear Technology IC 6-CH 10-BIT PROPRIETARY METHOD ADC, SERIAL ACCESS, UUC16, DIE-16, Analog to Digital Converter visit Linear Technology - Now Part of Analog Devices
LTC1594S16 Linear Technology IC 4-CH 12-BIT PROPRIETARY METHOD ADC, SERIAL ACCESS, PDSO16, SO-16, Analog to Digital Converter visit Linear Technology - Now Part of Analog Devices

MIL-STD-750 METHOD 2036 CONDITION E

Catalog Datasheet MFG & Type PDF Document Tags

HQ6025NH5RP

Abstract: Solder Heat MIL-STD-750: Method 2031 260°C, 10 seconds Solderability ANSI/J-STD-002, Category 3, Test A Lead Bend MIL-STD-750: Method 2036, Condition E ©2011 Littelfuse, Inc , Conditions MIL-STD-750: Method 1040, Condition A Rated VRRM, 150°C, 1008 hours MIL-STD-750: Method 1051 , MIL-STD-750: Method 1031 150°C, 1008 hours Low-Temp Storage Careful selection of the correct , Shock MIL-STD-750: Method 1056 0°C to 100°C, 5-minute dwell, 10-second transfer, 10 cycles
Littelfuse
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HQ6025NH5RP HQ6025 E71639 HQ6025LH5 HQ6025RH5 HQ6025RH5TP HQ6025NH5TP

KXXXZY

Abstract: K0900S °C, 10 seconds MIL-STD-750: Method 2036, Condition E ©2011 Littelfuse, Inc Specifications are , Temperature Voltage Blocking MIL-STD-750: Method 1040, Condition A Rated VDRM (VAC-peak), 125°C, 1008 hours MIL-STD-750: Method 1051 -40°C to 150°C, 15-minute dwell, 100 cycles EIA/JEDEC , protect against component damage. High Temp Storage MIL-STD-750: Method 1031 150°C, 1008 hours Low-Temp Storage -40°C, 1008 hours Thermal Shock MIL-STD-750: Method 1056 0°C to 100°C, 5
Littelfuse
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KXXXZY K0900S K0900 K1050 K1100 K1200 K1300 K1500
Abstract: MIL-STD-750: Method 2036, Condition E ©2011 Littelfuse, Inc Specifications are subject to change , Humidity High Temp. Storage Design Considerations MIL-STD-750: Method 1040, Condition A Rated VRRM, 125°C, 1008 hours MIL-STD-750: Method 1051 -40°C to 125°C, 15-minute dwell, 100 cycles EIA/JEDEC: JESD22-A101 320VDC, 85°C, 85%RH, 1008 hours MIL-STD-750: Method 1031 150°C, 1008 hours Low-Temp , tP TP Temperature Reï¬'ow Condition Ramp-up TL tL TS(max) Ramp-do Ramp-down Littelfuse
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EIA-481-2 Q6025R5 Q6025K6 Q6025L5 Q6025P5

MIL-STD-750 METHOD 2036 CONDITION E

Abstract: pro-electron installation into a circuit. Conditions: Mil-Std-750, Method 2036, Condition E K. Solderability E , mismatch between materials. Conditions: Mil-Std-750, Method 1051, -65°C to 150°C, 15 minutes dwell time at , temperature cycle. Conditions: Mil-Std-750, Method 1056, -55°C to 125°C, 5 minutes dwell time at each , terminals. Conditions: Mil-Std-750, Method 2026 The purpose of this test is to evaluate the moisture , method by which they are fabricated and assembled. ON-GOING RELIABILITY IMPROVEMENT PROBLEM Transistor
Fairchild Semiconductor
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MIL-STD-750 METHOD 2036 CONDITION E pro-electron

ic 4016

Abstract: DIODE PK IN 4001 4 10 Terminal strength (lead fatigue) (see 4. 7. 3) r 2036 Test condition E; weight = 4 oz â , strength (lead fatigue) (see 4. 7. 3) 2036 Test condition E; weight = 4 oz â'" - â'" â'" End points , I. Group A inspection Examination or test MIL-STD-750 LTPD Limits Method Details Symbol Min , -19500/195D Examination or test MIL-STD-750 LTPD Limits Method Details Symbol Min Max Unit Subgroup 1 , -65 °C "" â'¢ â'" â'¢â'¢ â'" â'" â'" - â'" . Terminal strength (tension) 2036 Test condition A
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1N3206 D253S ic 4016 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 IC 4011 details 0005S3M MIL-S-19500/195D QQ0012S MIL-S-19500/195C

MIL-PRF-195001

Abstract: 1N1614 Diodes with method 3101 of MIL-STD-750. The maximum limit and conditions for ZJX in screening (appendix E , , appendix E, table E-VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 4016 , . 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500. Subgroup Method Condition , /inch, t = 15 ±3 s. C2 2036 Test condition F, method B, 5 pounds, t = 15 ±3 s. C2 2036 , method 4066 of MIL-STD-750. IO = 0; VRM(W) = 0; IFSM = 100 A; six surges; TA = room ambient as defined
DEPARTMENT OF DEFENSE
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1N1614 1N1615 1N1616 1N4458 1N4459 1N1614R MIL-PRF-195001 1N1614 Diodes 1N1615R MIL-PRF-19500/162D MIL-PRF-19500/162C

DIODE 1N1206A

Abstract: 1n1124r ) Thermal response (see 4.3.2) 4 Not applicable VF2 and IR1 10 MIL-STD-750, method 1038, test condition A, t = 96 hours MIL-STD-750, method 1038, test condition A, t = 48 hours 11 , greater. 3/ 12 Burn-in, see 4.3.3 and 4.5.1. MIL-STD-750, method 1038, test condition B. Not , Test condition F, method B, weight = 5 pounds, t = 15 s. C2 2036 Test condition D1, seal , and JANTXV. 4.3.1 Surge current. Surge current, see MIL-STD-750, method 4066. IO = 0; VRM(w) = 0
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1N1202A 1N1204A 1N1206A 1N3671A 1N3673A 1N1124A DIODE 1N1206A 1n1124r x 260f 1N1126A 1N1128A MIL-PRF-19500/260F MIL-PRF-19500/260E

centrifuge

Abstract: , Condition C Procedure IIIA Method 208 Method 210, All Conditions Method 102, All Conditions Method 211, All Conditions Method 107, All Conditions Method 212, All Conditions Method 213, Conditions D, E & F Method 201 Method 204 - - MIL-STD-750 Method 1001, All Conditions Method 1021 Method 1022 Method 1041, Method 1046 Method 1071, Conditions C, D & F Method 1071, Condition H Method 2026 Method 2031 Method 1051, All Conditions Method 2036, All Conditions Method 1056, All Conditions Method 2006 Method 2016 Method 2046 Method
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centrifuge FC-43

FED-STD-H28 chamfer

Abstract: 1N6304 -19500. Subgroup Method Condition C2 2036 Tension, test condition A, weight = 10 pounds, t = 15s. C2 2036 Bending stress, test condition F, method B; weight = 15 pounds, t = 15 s. C2 2036 , 1038 of MIL-STD-750, test condition A; TC = +125°C, VR = 0.8 to 0.85 rated dc (see 1.3), t = 48 hours , 48 hours. 4.3.3 Surge current. Surge current, see method 4066 of MIL-STD-750. IO = 0; VRWM = 0; IFSM , measurements shall be performed in accordance with method 3101 of MIL-STD-750. The ZJX conditions and maximum
DEPARTMENT OF DEFENSE
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1N6304 1N6305 1N6306 DO-203AB FED-STD-H28 chamfer MIL-PRF-19500/550C MIL-PRF-19500/550B

1N1124A

Abstract: 1N1126A VF1 and IR1 Method 1038 of MIL-STD-750, test condition A, t = 96 hours VF1 and IR1; subgroup 2 of , applicable Not applicable VF1 and IR1 Method 1038 of MIL-STD-750 test condition A, t = 48 hours , E, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 1056 Test condition B , , method B, weight = 5 pounds, t = 15 s. C2 2036 Test condition D1, seal torque = 10 ounce-inches , value, whichever is greater. Burn-in, see 4.3.3 and 4.5.2. method 1038 of MIL-STD-750, test
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1N3649 260l MIL-PRF-19500/260L MIL-PRF-19500/260K 1N3650 1N1124RA 1N1126RA

kc 2026

Abstract: 100 KC £7UU&I UUp 1 Lead fatigue 2036 Condition E 10 5 â'" â'" â'" Subgroup 5 Salt atmosphere , . CONDITIONS LTPD MIN LIMITS SYMBOL UNITS MEL-STD-750 REF. METHOD SPECIFIC CONDITIONS or X REJ. NO , (Cont'd, ) EXAMINATION OR CONDITIONS LTPD MIN LIMITS TEST MIL-STD-750 REF. METHOD SPECIFIC , MIL-STD-750 REF. METHOD SPECIFIC CONDITIONS SYMBOL MIN MAX UNITS Subgroup 8 (Cont'd.) End , -19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods
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1N995M kc 2026 100 KC 1N995 mil-s-19500 color coding MIL-S-I9500/227 MIL-S-19500 MIL-S-105OO/227

MIL-STD-961

Abstract: c426 equivalent the manufacturer to use the condition in method 2036 they feel is applicable for their part. 62 , test method 2036 of MIL-STD-883 that are appropriate for the mounting conditions, and assure by , from test method 2036 or MIL-STD-883 that are appropriate for the mounting conditions, and assure by , may be built to Class K, H, G, or E performance requirements." to "Monolithic microcircuits may be built to Class K, H, G,D, E, L, or F performance requirements." DLA Land and Maritime DLA
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MIL-STD-961 c426 equivalent c6331 MIL-STD-750 method 2073 MIL-PRF-38534

2n7572

Abstract: ), Method 3131 of MIL-STD-750 (see 4.3.3). Thermal Impedance (transient), Method 3131 of MIL-STD-750 , : Method 1016 of MIL-STD-750, 9 short collector, emitter and base terminals together. Limit is 10 , accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH , limit as outlined in method 3161. See group E, subgroup 4 herein. Measurement delay time (tMD) 70 µs , -19500 Subgroup Method Condition B3 2037 Test condition A B4 1037 2,000 cycles, adjust
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2n7572 MIL-PRF-19500/736 2N7572 2N7573 2N7574

2N3960

Abstract: 2N3960UB , JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E , and JANTXV levels Thermal impedance Method 3131 of MIL-STD-750. Thermal impedance Method 3131 , shall be scrapped. Step Method Condition 1 1027 Steady-state life: Test condition B, 340 , Group C inspection, table VII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition E, not applicable to UB. C6 1026 VCB = 10 V dc, 1,000 hours; maximum rated power shall be
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2N3960 2N3960UB MIL-PRF-19500/399D MIL-PRF-19500/399C

mc 4011

Abstract: 1N6304 conditions. Burn-in conditions for all levels are as follows: MIL-STD-750, method 1038, test condition A; Tc , , test condition A, weight = 10 lbs, t = 15s. 2036 Bending stress, test condition F, method B; weight = , . Surge current, see MIL-STD-750, method 4066. IQ = 0; VRUM = 0; lFSM » 800 A; six surges; TA = +25°C , accordance with MIL-STD-750, method 3101. The iVF conditions and maximum AVf limit shall be derived by each , inspection, table IVb (JANTX and JANTXV) of HIL-S-19500. Subgroup Method Condition B2 4066 Tc = +55°C; Vg
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mc 4011 MIL-S-19500/550A MIL-S-19500/550 DI00E JANHCA1N6304 JANKCA1N6304

PT 2102 ic

Abstract: MIL-PRF-19500 e. tH heating time: Steady state (see MIL-STD-750, method 3131 for definition). f. tMO , VII of MIL-PRF-19500. Subgroup C1 C2 Method 2066 1056 2036 2036 2036 C3 C4 C5 C6 , conducted in accordance with test method 3131 of MIL-STD-750. The following details shall apply: a. IM , 1/ MIL-STD-750 Method Limits Symbol Conditions Unit Min Max 200 300 , ) TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Limits Symbol
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2N3846 2N3847 PT 2102 ic TRANSISTOR SUBSTITUTION DATA BOOK LM 3041 MIL-PRF-19500/412B MIL-S-19500/412A
Abstract: accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition , ratio MIL-STD-750 Symbol Method 3041 Conditions Bias condition C, VCE = 60 V dc 3076 , -19500) Measurement JANTX level 2 (1) 3c Required, TA = +200°C Thermal impedance, method 3131 of MIL-STD-750 , performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining , -19500. Subgroup Method B3 1037 Condition VCB ≥ 10 V dc, 2,000 cycles. 4.4.3 Group C inspection Microsemi
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MIL-PRF-19500/262G MIL-S-19500/262F 2N1722 2N1724

1N561

Abstract: 1N560 (tension) Terminal strength (lead fatigue) 2036 Condition A 2036 Condition E 4 lbs, 15 sec 4 arcs each lead , MIL-STD-750 Limits Examination or test Method Details LTPD Symbol Min. Max. Units Subgroup 1 5 Visual ana mecnanicai 2071 examination Siihcrrnun 2 â'"â'"O- â'" â'" F â'" e i , MIL-STD-750 LTPD Symbol Limits Method Details Min. Max. Units Reverse current 1N560 1N561 , MIL-STD-750 â'" Test Methods for Semiconductor Devices (Copies of specifications, standards, drawings and
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mil-s-19500 coding TNETC 9500/167B MIL-S-19500/167A

DIODE 1N3768-R

Abstract: diode 1N1188 . 4.3.3 Power burn-in. Power burn-in conditions are as follows: Method 1038 of MIL-STD-750, condition A, t , -19500. Subgroup Method Condition C2 1056 0°C to +100°C, 10 cycles. C2 2036 Test condition , current. Surge current, method 4066 of MIL-STD-750. IO = 0; VRM(W) = 0; IFSM = 500 A; six surges; TA = 25 , impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750. The thermal , ) of MIL-PRF-19500. Subgroup Method Condition B2 1051 -55°C to +175°C, 25 cycles. B2
DEPARTMENT OF DEFENSE
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1N1184 1N1186 1N1188 1N1190 1N3766 1N3768 DIODE 1N3768-R diode 1N1188 1N1184R 1N1186R MIL-PRF-19500/297G MIL-PRF-19500/297F

1N560

Abstract: ic 4016 ) 2036 Condition A 2036 Condition E 4 lbs, 15 sec 4 arcs each lead Subgroup 5 20 1 Barometric , -19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods , , full cycle average 1N560 1N551 Reverse current, full cycle average resistive load 1N560 1N561 MIL-STD-750 Method i Liei ail h 2071 4011 4016 4021 4016 '.011 :016 Lp = 500 mAdc F VR= 800 Vdc 1000 Vdc VR , . 5 V 0. 5 V 200 l
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of ic 4016 9SS diode D0DD12S IC 4011 QDDD12S MIL-S-19500/167B MIL-S-19 500/167B 5961-N051
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