500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
THS9001DBVRG4 Texas Instruments RF/Microwave Amplifier, 50 MHz - 350 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, GREEN, PLASTIC, MO-178AB, SOT-23, 6 PIN visit Texas Instruments
THS9001DBVR Texas Instruments 50MHz - 350MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, GREEN, PLASTIC, MO-178AB, SOT-23, 6 PIN visit Texas Instruments
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil

MICROWAVE TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

C 3311 transistor

Abstract: c 3198 transistor BIPOLARICS, INC. Part Number BRF480 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA , SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: (1) BIAS CONDITION: VCE = 8 , . Part Number BRF480 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S , 4 BIPOLARICS, INC. Part Number BRF480 MEDIUM POWER SILICON MICROWAVE TRANSISTOR BRF48035 , . Part Number BRF480 MEDIUM POWER SILICON MICROWAVE TRANSISTOR BRF4809 Package Style 9: SOT
Bipolarics
Original
BRF48023 BRF4802 BRF4801 BRF4801J BRF48086 BRF48084 C 3311 transistor c 3198 transistor

TRANSISTOR zo 109 ma

Abstract: transistor zo 109 BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA , . Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR TYPICAL S PARAMETERS: VCE = 3.3 V , Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR TYPICAL S PARAMETERS: VCE = 8 V, IC = 75 mA , POWER SILICON MICROWAVE TRANSISTOR 85 Package: Micro-X 85 Mil Ceramic 70 Package: 70 Mil Stripline , MEDIUM POWER SILICON MICROWAVE TRANSISTOR 43 Package: SOT-143 22 Package: SOT-223 02 Package: SOT
Bipolarics
Original
TRANSISTOR zo 109 ma transistor zo 109 transistor 86 ZO 109 transistor microwave transistor IC 7585

BRF5301

Abstract: BRF53010 BIPOLARICS, INC. Part Number BRF530 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , silicon bipolar transistor intended for use in low noise applications at VHF, UHF and microwave , BRF530 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS , PAGE 3 BIPOLARICS, INC. Part Number BRF530 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT , NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION: VCE = 8 V
Bipolarics
Original
BRF5304 BRF5304SL BRF5301J BRF5301 BRF5302 BRF53012 BRF53010

06309

Abstract: B12V114 BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , silicon bipolar transistor intended for use in low noise applications at VHF, UHF and microwave , B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS , NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION , PAGE 5 BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR 04
Bipolarics
Original
06309

macro-X ceramic

Abstract: BRF604 BIPOLARICS, INC. Part Number BRF604 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , silicon bipolar transistor intended for use in low noise applications at VHF, UHF and microwave , . Part Number BRF604 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF60404 Package Style 04: 0.145 , , INC. Part Number BRF604 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF60435 Package Style 35 , .215+.010 5.46+.25 PAGE 3 BIPOLARICS, INC. Part Number BRF604 NPN LOW NOISE SILICON MICROWAVE
Bipolarics
Original
BRF60486 BRF60485 BRF60487 BRF60402J BRF60402 BRF60414 macro-X ceramic

GHZ micro-X Package

Abstract: MICROWAVE TRANSISTOR BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , PAGE 2 BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR , BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF61002J PackageStyle 02J: SOT-23J 0.30 0.51 , APPLICATIONS: Bipolarics' BRF610is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be
Bipolarics
Original
BRF61004 BRF61085 BRF61087 BRF61002 BRF61014 BRF61035 GHZ micro-X Package micro-x transistor Micro-X ceramic npn MICRO-X Silicon Bipolar Transistor 35 MICRO-X BRF61086

GHZ micro-X Package

Abstract: micro-x transistor BIPOLARICS, INC. Part Number BRF602 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , 2 BIPOLARICS, INC. Part Number BRF602 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR , Part Number BRF602 BIPOLARICS, INC. NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF60202J , NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF60235 Package Style 35: Micro-X 0.085" Hermetic , APPLICATIONS: Bipolarics' BRF602 is a high performance silicon bipolar transistor intended for use in low
Bipolarics
Original
BRF60286 BRF60285 BRF60284 BRF60202 BRF60214 BRF60292 P1D transistor

ic 4027

Abstract: 3019 npn transistor BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS , Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS , , INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR 04 Package: 0.145 , . Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR 02 Package: SOT-23 02J Package
Bipolarics
Original
ic 4027 3019 npn transistor transistor 30 j 124 7498 ic ic 4027 information SOT-23J

17dBtyp

Abstract: GHZ micro-X Package BIPOLARICS, INC. Part Number BRF630 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , silicon bipolar transistor intended for use in low noise applications at VHF, UHF and microwave , BRF630 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF63004 Package Style 01: 0.145" Plastic , 5.46+.25 PAGE 3 BIPOLARICS, INC. Part Number BRF630 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR , . Part Number BRF630 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF63035 Package Style 35: Micro-X
Bipolarics
Original
BRF63086 BRF6385 BRF63087 BRF63002J BRF63002 BRF63014 17dBtyp

Silicon Bipolar Transistor 35 MICRO-X

Abstract: Silicon Bipolar Transistor MICRO-X BIPOLARICS, INC. Part Number B30V140 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET , POWER SILICON MICROWAVE TRANSISTOR Package Style 35: Micro-X 0.085" Ceramic Package Style 70: 0.070 , PAGE 3 BIPOLARICS, INC. Part Number B30V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR Package , SILICON MICROWAVE TRANSISTOR Package Style 4SM: 85 mil Plastic,Micro-X Surface Mount Package Style , silicon bipolar transistor intended for linear power applications at frequencies of 0.5 to 2.6 GHz
Bipolarics
Original
B30V1160 Silicon Bipolar Transistor MICRO-X B30V180

Diode Equivalent 1n4148

Abstract: equivalent transistor R5 Philips Semiconductors Product specification Microwave Transistors APPLICATION INFORMATION COMPONENT A D.U.T. TR D C 1,C 2 R1 R2, R3, R5, R6 R4 Rp Rb> Rc. Re. Rx General DESCRIPTION amplifier microwave transistor transistor diode tantalum capacitor resistor resistor resistor resistor resistor VALUE DIMENSIONS TYPE NUMBER 1/4 MC3403 or equivalent 2N2219 or equivalent 1N4148 or , adapted to lc of the D.U.T. Fig.3 Bias circuit for a class-A linear microwave transistor. 1997 Mar
-
OCR Scan
Diode Equivalent 1n4148 equivalent transistor R5 2n2219 equivalent transistor 2n2219 equivalent diode 1n4148 equivalent resistor

62 01071

Abstract: 3019 Transistor BIPOLARICS, INC. Part Number BRF510 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , BIPOLARICS, INC. Part Number BRF510 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET , SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION: S-MATRIX: V , BIPOLARICS, INC. Part Number BRF510 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET , SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION: VCE = 8 V, I C =
Bipolarics
Original
62 01071 3019 Transistor ic 7413 datasheet TRANSISTOR 4841 03-198 Bipolarics* BRF510

BFQ33

Abstract: SOT-100 AMER PHILIPS/DISCRETE BFQ33C is recommended for new design 5SE D â  bbSB^Bl 0017333 G â  BFQ33 v T-Sl-lf N-P-N MICROWAVE TRANSISTOR The BFQ is an N-P-N transistor in a miniature hermetically , Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE N-P-N microwave transistor , AMER PHILIPS/DISCRETE BSE D N-P-N microwave transistor bbS-3T31 0D17Ã37 3 I BFQ33 J V_ T-37-15 _ , low noise. It is primarily intended for use in microwave amplifier applications. QUICK REFERENCE DATA
-
OCR Scan
IEC134 SOT-100 transistor bbs
Abstract: N AMER PHILIPS/DISCRETE SSE D BFQ33C is recommended for new design bbS3T31 0017633 0 â  BFQ33 T '-3 /-| S ' N-P-N MICROWAVE TRANSISTOR The B FQ is an N-P-N transistor in a miniature , N-P-N microwave transistor 0017335 4' BFQ33 l Tâ'"31â'"15 C H A R A C T E R IS T IC S , co-ordinates in ohm x 50. N AMER PHILIPS/DISCRETE N-P-N microwave transistor E SE D bbS3T31 , and very low noise. It is primarily intended for use in microwave amplifier applications. Q U IC K R -
OCR Scan
S3T31 7Z89164

SOT333

Abstract: SOT423 microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages , /Isolators. 4.1 Basics of RF and microwave transistor packages In general, two (the base/gate and , and microwave transistor packages material since it combines good thermal conductivity (250 W/mK , transistor and power amplifier fundamentals 4.5 RF and microwave transistor packages Hermetic , RF transmitting transistor and power amplifier fundamentals 4.7 RF and microwave transistor
Philips Semiconductors
Original
SOT333 SOT423 sot468 SOT439 thermal compound wps II TO metal package aluminum kovar

mount chip transistor 332

Abstract: SOT-23 TRANSISTOR 548 Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series , Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Absolute Maximum Ratings MA4T645 , Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Electrical Specifications @ +25°C , Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Typical Scattering Parameters in the , subject to change without notice. Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645
M/A-COM
Original
MA4T64500 mount chip transistor 332 SOT-23 TRANSISTOR 548 MA4T64535 MA4T64533 MA4T64539

73412

Abstract: NE64535 . 3-35 NPN Medium Power Microwave Transistor. 3-39 NPN Medium Power Microwave Transistor , . 3-71 NPN Silicon Microwave Transistor. 3-77 NPN Silicon Microwave Transistor , 3-157 3-157 3-173 NPN Silicon Microwave Transistor
-
OCR Scan
NE02135 NE64535 73412 CHIP transistor 348 Transistor 120 NE68039 NE46134 NE85634 NE46734 NE85619 NE68119 NE68519

nd 16 TRANSISTOR SOT-23

Abstract: TRANSISTOR b 772 p High fT Low Noise Microwave Transistor MA4T645 Series Absolute Maximum Ratings MA4T645 Series , . AMR Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Electrical , Microwave Transistor MA4T645 Series Typical Scattering Parameters in the Micro-X Package (Cont'd , . AMR Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Typical , Microwave Transistor MA4T645 Series Typical Performance Curves (Cont'd) Nom inal Output Power at the
-
OCR Scan
nd 16 TRANSISTOR SOT-23 TRANSISTOR b 772 p sot-23 rks RKS SOT23 transistor TE 901 equivalent SOT-143 717

GE Transistor Manual

Abstract: transistor k 316 Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent , same resistor topology is used to bias the transistor. Since the cost per dB of microwave gain or , to dc bias considerations. Microwave transistor amplifier design requires biasing the transistor , feedback is used for dc stability. At microwave frequencies the bypass capacitor becomes a problem since a
Agilent Technologies
Original
GE Transistor Manual transistor k 316 transistor circuit design 35820 5988-0424EN

bfr14a

Abstract: Transistor BFR14a BFR 14A NPN Silicon planar microwave transistor BFR14A is an expitaxial NPN silicon planar microwave transistor. Due to its low noise figure high amplification and low distortion it is particularly suitable for use in low-noise pre-stages, broad-band, IF and radar amplifiers up to 5 GHz as well as for low-output oscillator circuits. The strip-line ceramic package is particularly adapted for use in thin and thick film technology and permits use in space engineering. The emitter terminal is connected to the
-
OCR Scan
Transistor BFR14a Q62702-F416
Showing first 20 results.