| MGY25N120 |
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Motorola
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Bipolar Transistor, Insulated Gate Bipolar Transistor N-channel Enhancement Mode Silicon Gate |
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PDF
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| MGY25N120 |
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Motorola
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Insulated Gate Bipolar Transistor |
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Original |
PDF
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| MGY25N120 |
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On Semiconductor
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IGBT Chip, N Channel, 1200V, TO-264, 3-Pin |
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Original |
PDF
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| MGY25N120 |
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On Semiconductor
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Insulated Gate Bipolar Transistor N-Channel |
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Original |
PDF
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| MGY25N120/D |
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Motorola
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IGBT IN TO-264 A |
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Original |
PDF
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| MGY25N120/D |
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Motorola
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IGBT IN TO-264 25 A |
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Original |
PDF
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| MGY25N120D |
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Motorola
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Bipolar Transistor, Insulated Gate Bipolar Transistor with Anti-ParallelDiodeN-ChannelEnhancement-ModeSiliconGate |
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Original |
PDF
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| MGY25N120D |
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Motorola
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Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
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Original |
PDF
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| MGY25N120D |
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On Semiconductor
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IGBT Chip, N Channel, 1200V, TO-264, 3-Pin |
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Original |
PDF
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| MGY25N120D |
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On Semiconductor
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Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
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Original |
PDF
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| MGY25N120-D |
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On Semiconductor
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Insulated Gate Bipolar Transistor N-Channel Enhanc |
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Original |
PDF
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| MGY25N120D/D |
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Motorola
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IGBT & DIODE IN TO-264 25 A |
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Original |
PDF
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| MGY25N120D/D |
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Motorola
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IGBT & DIODE IN TO-264 25 A |
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Original |
PDF
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| MGY25N120D-D |
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On Semiconductor
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Insulated Gate Bipolar Transistor with Anti-Parall |
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Original |
PDF
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| MGY25N120G |
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On Semiconductor
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IGBT Chip: N Channel: 1200V: TO-264: 3-Pin |
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Original |
PDF
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