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Part : MGP7N60ED Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 5,116 Best Price : $0.59 Price Each : $0.72
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MGP7N60ED Datasheet

Part Manufacturer Description PDF Type
MGP7N60E/D Motorola IGBT IN TO-220 4.0 A Original
MGP7N60ED On Semiconductor Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Original
MGP7N60ED On Semiconductor IGBT Chip, N Channel, 600V, TO-220AB, 3-Pin Original
MGP7N60E-D On Semiconductor Insulated Gate Bipolar Transistor N-Channel Enhanc Original
MGP7N60ED/D Motorola IGBT & DIODE IN TO-220 7.0 A Original
MGP7N60ED-D On Semiconductor Insulated Gate Bipolar Transistor with Anti-Parall Original
MGP7N60EDG On Semiconductor IGBT Chip: N Channel: 600V: TO-220AB: 3-Pin Original

MGP7N60ED

Catalog Datasheet MFG & Type PDF Document Tags

p7n60

Abstract: '™s â"¢ Data Sheet MGP7N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode , MGP7N60ED ELECTRICAL CHARACTERISTICS ( T j = 25°C unless otherwise noted) C haracteristic Sym bol , Motorola IGBT Device Data MGP7N60ED DIODE CHAR A C TERISTICS Diode Forward Voltage Drop Vdc Vfec , Junction Temperature MGP7N60ED C/3 Hj o C, CAPACITANCE (pF) C3 < o > cc < C3 , LOSSES (mJ) MGP7N60ED lc , COLLECTOR CURRENT (AMPS) Figure 11. T u rn -O ff Losses versus
-
OCR Scan
p7n60 P7N60ED/D

MGP7N60ED

Abstract: MOTOROLA Order this document by MGP7N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer'sTM Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGP7N60ED N­Channel , Motorola, Inc. 1998 Data 1 MGP7N60ED ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise , Motorola IGBT Device Data MGP7N60ED DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 2.3 Adc , . Collector­To­Emitter Saturation Voltage versus Junction Temperature Motorola IGBT Device Data 3 MGP7N60ED
Motorola
Original
220AB IGBTMGP7N60ED/D

ad 152 transistor

Abstract: 5NH20 MOTOROLA Order this document by MGP7N60ED/D SEMICONDUCTOR TECHNICAL DATA TM Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGP7N60ED N­Channel , Motorola, Inc. 1998 Data 1 MGP7N60ED ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise , 300 us, Duty Cycle 2%. 2 Motorola IGBT Device Data MGP7N60ED DIODE CHARACTERISTICS VFEC , Data 3 MGP7N60ED VGE = 0 V TJ = 25°C 1000 C, CAPACITANCE (pF) VGE, GATE­TO­EMITTER
Motorola
Original
ad 152 transistor 5NH20
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP7N60ED/D Designer'sTM Data , a te -E m itte r Z e n e r Diodes MGP7N60ED IGBT & DIODE IN T 0 -2 2 0 7.0 A @ 90°C 10 A @ 2 5 , MOTOROLA © M otorola, Inc. 1998 MGP7N60ED ELECTRICAL CHARACTERISTICS ( T j = 2 5 °C u n le ss o th e , 2 Motorola IGBT Device Data MGP7N60ED DIODE CHARACTERISTICS D iode F o rw a rd V oltag e D , versus Junction Temperature Motorola IGBT Device Data 3 MGP7N60ED C/3 Hj o C -
OCR Scan
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP7N60ED/D Designer'sTM Data , High Voltage Termination ESD Protection G ate-E m itter Zener Diodes MGP7N60ED IGBT & DIODE IN T , la , Inc. REV 1 ( ^ ) MOTOROLA £> M otorola, Inc. 1998 MGP7N60ED ELECTRICAL , 2 Motorola IGBT Device Data MGP7N60ED DIODE CHARACTERISTICS D iode Fo rw ard V o lta g e D , Voltage versus Junction Temperature Motorola IGBT Device Data 3 MGP7N60ED C , CAPACITANCE (pF -
OCR Scan
Abstract: ,s C C/W °C Motorola IGBT Device Data 4-25 MGP7N60ED ELECTRICAL CHARACTERISTICS (T j = -
OCR Scan

SGH80N60RUFD

Abstract: bup314 equivalent MGP7N60E MGP7N60ED MGW14N60ED MGW21N60ED MGW30N60 MGY40N60 IXGA10N60 IXGA12N60C IXGA12N60CD1
Infineon Technologies
Original
SGH30N60UFD SGH80N60RUFD BUP314 bup314 equivalent bup314d SGU06N60 SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGL10N60RUFD

hp7800

Abstract: hp4504 optocoupler ) MGP7N60ED HP 4503 For More Information On This Product, Go to: www.freescale.com MOTOROLA 5
Freescale Semiconductor
Original
hp7800 hp4504 optocoupler lm339 pwm speed motor hp 4503 hp4504 overcurrent protection relay using PIC microcontroller AN1664/D AN1664 MC68HC908MR24

hp 4503

Abstract: hp7800 Optoisolation: AN1664 IGBT (copack) MGP7N60ED HP 4503 For More Information On This Product, Go to
Freescale Semiconductor
Original
inverter 400Hz IGBT PURE SINE WAVE schematic diagram 1000uF 35V capacitor microcontroller based 220v pure sine wave inverter circuit diagram IGBT DRIVER SCHEMATIC 3 PHASE 400Hz 230v 400Hz converter schematic lm339 pwm speed motor 220v DC MOTOR SPEED CONTROLLER schematic

hp 4503

Abstract: overcurrent protection relay using PIC microcontroller Optoisolation: AN1664 IGBT (copack) MGP7N60ED HP 4503 MOTOROLA 5 The schematic of the Power Stage
Motorola
Original
hp4503 MC68HC908MR24FU PWM Inverter using PIC Microcontroller 100w inverter PURE SINE WAVE schematic diagram PWM IR2112 10uf 16V Electrolytic Capacitor

STR-G6551

Abstract: STR-F6654 ,s C C/W °C Motorola IGBT Device Data 4-25 MGP7N60ED ELECTRICAL CHARACTERISTICS (T j =
Infineon Technologies
Original
STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 2002-S P-DSO14/16 P-TO-220

transistor marking code 12W SOT-23

Abstract: MGB20N40CL MGP7N60E MGP7N60ED MGW14N60ED MGW21N60ED MGW30N60 MGY40N60 IXGA10N60 IXGA12N60C IXGA12N60CD1
ON Semiconductor
Original
transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR SG388/D

SSP35n03

Abstract: bc417 ) MGP7N60ED HP 4503 For More Information On This Product, Go to: www.freescale.com MOTOROLA 5
-
Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

intel dg 41 crb

Abstract: tl4311 Optoisolation: AN1664 IGBT (copack) MGP7N60ED HP 4503 For More Information On This Product, Go to
ON Semiconductor
Original
intel dg 41 crb tl4311 1.5ke series SOP23-5 24v 10A tl494 mc5001 SG388CH/D