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MGF1402 Datasheet

Part Manufacturer Description PDF Type
MGF1402 N/A FET Data Book Scan
MGF1402B Mitsubishi FET Transistor, LOW NOISE GaAs FET Scan
MGF1402B Mitsumi MGF1402B Scan

MGF1402

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ELECTRONIC DEVICE GROUP TY PICA L C H A R A C T E R IS T IC S (Characterization of Die, MGF1402) MGFC1402 MG F1302 MGF1402 MGF1902B I q «*. V q$ o »*· V OS GATE TO SOURCE VOLTAGE VGS (VI O R A IN , _ MGFC1402 Package MGF1302 MGF1402 MGF1902B TYPICA L C H A R A C T E R IS T IC S (Characterization of , _ MGFC1402 Package MG F1302 MGF1402 MGF1902B S?;? AnQ , F1302 MGF1402 MGF1902B Sm Angie (4*9 ~ 14.4 28.1 42.1 54.3 66 .7 76.6 90.1 > S M*9n 0.010 0.023 -
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MGFC1402-T03 MGF1302-15 MGF1902B-65 mgf*1302-15 mgf1302 p F1902B MGF1302/1402/1902B F1302/1402/1902B 1302/1402/1902B 157MIN MGFC1402-T01
Abstract: > 6 249 82 9 MITSUBISHI (DISCRETE SC) MGF1402 (2SK274) 9 1 D 10033 D T -a -zs FOR , > . _ - 6249 82 9 MITSUBISHI , ) ' MGF1402(2SK274) 91D 10035 Ö T~ 3 )-Z S FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL , SEMICONDUCTOR MGF1402(2SK274) 6249 8 29 MITSUBISHI (DISCRETE SC) 91D 10036 D , DE J t B 4c iñ5c i 0010037 0 MITSUBISHI SEMICONDUCTOR MGF1402(2SK274) 624 98 29 -
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MGF1402 -01 F1402
Abstract: =4GHz 122 GSD MGF1402 -
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MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 MG15G4GM1 MGF1202 mgf1102 MGF1305 MG36N06E MG35N06E
Abstract: A MGF1303B G MGF1451A T MGF1402B J MGF1403B L MGF1601B E MGF1801B Agilent Technologies
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2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file LF2810A LF2802A F2001 F2002 F2003 F2004
Abstract: ï»¿â  b241fl2tì 0017040 b47 â  DESCRIPTION The MGF1402B low-noise GaAs FET with an N-channel , oscillators. QUALITY GRADE â'¢ IG, IGX, IGV MITSUBISHI SEMICONDUCTOR MGF1402B LOW NOISE GaAs , Manufacturer DDlTfim 5Û3 MITSUBISHI SEMICONDUCTOR MGF1402B LOW NOISE GaAs FET TYPICAL , hE^&BH Q017Ã"42 MIT MITSUBISHI SEMICONDUCTOR MGF1402B LOW NOISE GaAs FET NOISE PARAMETERS , 0017643 35b MITSUBISHI SEMICONDUCTOR MGF1402B LOW NOISE GaAs FET Sn,S22vs. f. S21,S12 vs. f -
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MZ 13001 TRANSISTOR BD559 w3819b field effect transistor Transistor B0243C 7119 amperex NEC Tokin oe 907 VV276
Abstract: ! MITSUBISHI SEMICONDUCTOR MGF1402B LOW NOISE GaAs FET D E S C R IP T IO N The MGF1402B low-rtoise GaAs FET w ith an N -ch an nel S ch o ttk y g ate is designed fo r use in S to X band , ambient 2-20 MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGF1402B LOW NOISE GaAs , 2-21 MITSUBISHI SEMICONDUCTOR MGF1402B LOW NOISE GaAs FET N O IS E P A R A M E T E , ELECTRIC MITSUBISHI SEMICONDUCTOR MGF1402B LOW NOISE GaAs FET S n , S 22 vs. f. S Dalbani Catalog
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STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 TLF14712F TLF14718F TLF14731F TLF14531FV TLF14731F1A TLF14731F3A
Abstract: CORPORATION Comments S2P file MGF1302.s2p MGF1303B.s2p MGF1402B.s2p MGF1403B.s2p Tape & Reel , CORPORATION Low Noise GaAs FETs/HEMTs Type No. MGF1302 MGF1303B MGF1402B MGF1403B MGF1907A MGF1908A Mitsubishi
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QL-1104E-A MGF4851A MGF4921AM gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet marking J GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A
Abstract: POWER DEVICES) 1.2 Line-up for C Band Power Amplifiers 3.7 ~ 4.2 GHz band Amplifier â'" 8dBm - MGF1402B MGF2407A MGF2430A MGFC36V3742A 36dBm â'" 3dBm MGF1402B MGF2407A MGF2445 MGFC39V3742A 39dBm -2dBm MGF1402B MGF2407A MGFC36V3742A MGFC42V3742 D>â'"O- - 42dBm 4.4 ~ 5.0 GHz band Amplifier MGF1402B MGF2407A MGF2430A MGFC36V4450A -6dBm O-î>-> 36dBm MGF1402B MGF2407A MGF2445 MGFC39V4450A â'" IdBm â  39dBm MGF1402B MGF2407A , 36dBm -8dBm - MGF1402B MGF2407A MGF2415A MGF2445 NIGFC39V5258 1>â'"o- -39dBm MGF1402B MGF2407A MGF2430A -
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fet K 793 cdb 838 S22VS 30ria 91 569 775 -35 S Q017
Abstract: MITSUBISHI SEMICONDUCTOR MGF1402B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATURES â'¢ â'¢ Low noise figure N F min = 3 .0 d B (TYP.) @ f = 12GHz High associated gain Gs = 8 d B (T Y P .)@ f = 12G Hz â -
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cha 0438
Abstract: MGF1302 A GD-4 Low Noise FET MGF1303B - G MGFI323 H MGF1402B J GD-9 MGFI412B K MGF1403B L , MGF1423 H MGF1323 MGF1903B MGF1425 J MGF1904B MGF1402B K Mitsubishi
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C42V5964 MGF1302 TRANSISTOR MGF1601 M67760LC H2 MARKING SOT-89 mmIC M57721 FU-632SEA-V3M FU-632SEA-V6M FU-641SEA-1M1/1M2/1M3/1M4 FU-68SDF-V802M FU-68SDF-V810M FU-445SDF-W1M1B
Abstract: MITSUBISHI SEMICONDUCTOR MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC Mitsubishi -
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MGF4714AP MGF4914D MGF1923 MGF4919 MGF2430 block diagram of power factor meter 7.1 power amplifier circuit diagram MGF4919E MGF4914E MGF49T4D
Abstract: LOW NOISE GaAs FET M G F Ix x x x Series Typical Characteristics Type Froq. (GHe ) 4 4 12 12 12 12 12 12 12 12 12 12 NFmin. (dB| 1.4 1.2 1.8 101*1) 3.0 2 5 1.8 10 CD 14 3.0 1.8 10 (*1) m -
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