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MGF0909A Datasheet

Part Manufacturer Description PDF Type Ordering
MGF0909A Mitsubishi TRANS JFET N-CH 10V 5000MA 3GF-7
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3 pages,
34.36 Kb

Original Buy
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MGF0909A Mitsubishi MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
ri

3 pages,
22.02 Kb

Original Buy
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MGF0909A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MITSUBISHI SEMICONDUCTOR (GaAs FET) MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING U nit:m illim eters The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power PidB=38dBm(TYP.) @f=2.3GHz â , 45 - A - dB % 5.5 "C/W - MITSUBISHI SEMICONDUCTOR (GaAs FET) MGF0909A L, S , (GaAs FET) MGF0909A L, S BAND POWER GaAs FET S11 ,S22 S PARAMETERS Freq. (GHz) Magn ... OCR Scan
datasheet

3 pages,
43.48 Kb

MGF0909A TEXT
datasheet frame
Abstract: MITSUBISHI SEMICONDUCTOR MGF0909A L & S BAND GaAs FET [ non ­ matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES 2MIN · High output power P1dB=38.0dBm(TYP , Electric June/2004 MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C TC=0deg TC=50deg TC , 40 Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR MGF0909A L & S BAND ... Mitsubishi
Original
datasheet

3 pages,
34.34 Kb

MGF0909A TEXT
datasheet frame
Abstract: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The MGF0909A, GaAs FET with an N-channel schottky gate, is Unit:millimeters designed for use in UHF band amplifiers. FEATURES 1 · High output power P1dB=38dBm(TYP.) @f=2.3GHz , =22dBm Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET TYPICAL , MGF0909A L, S BAND POWER GaAs FET S11 ,S22 vs. f. S21 ,S12 vs. f. +90° +j50 +j25 +j10 ... Mitsubishi
Original
datasheet

3 pages,
22.05 Kb

MGF0909a MGF0909 MGF0909A TEXT
datasheet frame
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched DESCRIPTION OUTLINE DRAW ING The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for , are subject to change. 1 < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched Keep safety first in ... Mitsubishi
Original
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3 pages,
91.64 Kb

MGF0909A TEXT
datasheet frame
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched DESCRIPTION The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. OUTLINE DRAW ING Unit : m illim eters FEATURES High output power P1dB=38.0dBm(TYP.) @f=2.3GHz , stage) > MGF0909A L & S BAND / 6W non - matched MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg , ., 2011 2 PAE (%) < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W ... Mitsubishi
Original
datasheet

3 pages,
108.98 Kb

MGF0909a application MGF0909A TEXT
datasheet frame
Abstract: MITSUBISHI SEMICONDUCTOR (GaAs FET) MGF0909A L, S BAND POWER GaAs FET DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING Unit:millimeiers y FEATURES · High output power PidB=38dBm(TYP.) · High power gain G lp , *1 :Channel to case *2:Pin=22dBm Nov. '97 MITSUBISHI SEMICONDUCTOR (GaAs FET) MGF0909A L , MITSUBISHI SEMICONDUCTOR (GaAs FET) MGF0909A L, S BAND POWER GaAs FET S11 ,S22VS S22VS.f. S21 ,Sl2 VS. f ... OCR Scan
datasheet

3 pages,
61.15 Kb

MGF0909A TEXT
datasheet frame
Abstract: -21 Flange Type MGF0909A 9A GF-7 MGF0910A MGF0910A 0910A GF-21 GF-21 MGF09I1A MGF09I1A 0911A GF-21 GF-21 MGF160IB MGF160IB D GF-11 GF-11 Micro Disk ... OCR Scan
datasheet

7 pages,
301.47 Kb

MGF1403B MGF4910 MGF1412B K25V4045 mgf4304 MGF1601 MGF1102 MGF4304A MGF4301A MGF4900B k37v MGF4305A MGF1302 MGF7003 MGF1304 MGF4301 MGF1412 MGF1100 MGF4310 MGF1200 TEXT
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Abstract: Band ~8 Freq.(GHz) ~X/Ku Band ~14.5 42 MGF0911A MGF0911A MGF0907B MGF0907B GF-21 GF-21 MGF0909A 38 GF , 4 MGF0909A 37 38 - 10 - - 45 2.3 10 1.3 - - GF ... Mitsubishi
Original
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16 pages,
3725.89 Kb

MGF0907b x-band mmic lna MGF1403B GF-18 CHINA MOBILE BA01254 BA01282 MGF2430A mgf4953a MGF4961B LNB down converter for Ku band mitsubishi mgf mgf4941al MGF4961 MGF1907A mgfc36v-a QVC12 sirio MGF0909A MGFS40H2201G MGFS45H2201G TEXT
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Abstract: MGFK36V4045 MGFK36V4045 100 MGF0909A 100 MGFC41Vxxxxx 50 MGFK37V4045 MGFK37V4045 50 MGF09I0A MGF09I0A 100 MGFC42Vxxxxx 25 MGFK38Vxxxx 50 ... OCR Scan
datasheet

15 pages,
348.97 Kb

MGFC38V HP8970B mgf4918 mgf2415a MGFX35 MGF0909A MGF2407A of fet DC bias of gaas FET MGF0904A MGF1923 7.1 power amplifier circuit diagram mgf2445 block diagram of power factor meter MGF2430 MGF4914D MGF1402B MGF4919 MGF4714AP MGF2430A TEXT
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Abstract: POWER AMPLIFIERS (Discrete Devices) MGF0911A MGF0911A MGF0907B MGF0907B 38 MGF0909A MGF0805A MGF0805A# 30 MGF0915A MGF0915A , EXAMPLES Min. MGF0805A MGF0805A# MGF0904A MGF0904A MGF0905A MGF0905A MGF0906BL MGF0906BL MGF0907BL MGF0907BL MGF0909A MGF0910AL MGF0910AL MGF0911AL MGF0911AL ... Mitsubishi
Original
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12 pages,
1260.72 Kb

MGFG5H1503 GD-32 MGF0904 MGF0909A MGF2430 BA012J1 MGF4937AM mgfc39v5964 MGFG5H1502 MGF4937 TEXT
datasheet frame
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched DESCRIPTION The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. OUTLINE DRAW ING Unit : m illim eters FEATURES High output power P1dB=38.0dBm(TYP.) @f=2.3GHz , stage) > MGF0909A L & S BAND / 6W non - matched MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg , ., 2011 2 PAE (%) < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W ... OCR Scan
datasheet

3 pages,
114.16 Kb

2sc 1203 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
! MGF0909A(Ta=25deg. C, VDS=10V, lD=1.3A) ! From 1996/1997 GaAs FET/MMIC Data book # GHZ S MA R 50 ! Freq.S11 S21 S12 S22 ! GHz (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 0.5 0.968 -155.5 3.763 97.8 0.013 13.2 0.823 -177.6 0.6 0.966 -159.7 3.340 93.6 0.013 14.6 0.823 -179.6 0.7 0.966 -163.4 2.768 90.8 0.014 16.5 0.822 178.5 0.8 0.965 -166.8 2.460 87.5 0.014 18.2 0.822
/datasheets/files/mitsubishi/docs/s2p/mgf0909a.txt
Mitsubishi 21/12/1998 1.87 Kb TXT mgf0909a.txt