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MGF0909A Datasheet

Part Manufacturer Description PDF Type
MGF0909A Mitsubishi TRANS JFET N-CH 10V 5000MA 3GF-7 Original
MGF0909A Mitsubishi MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET Original

MGF0909A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MITSUBISHI SEMICONDUCTOR (GaAs FET) MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING U nit:m illim eters The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES â'¢ High output power PidB=38dBm(TYP.) @f=2.3GHz â , 45 - A - dB % 5.5 "C/W - MITSUBISHI SEMICONDUCTOR (GaAs FET) MGF0909A L, S , (GaAs FET) MGF0909A L, S BAND POWER GaAs FET S11 ,S22 S PARAMETERS Freq. (GHz) Magn -
OCR Scan
Abstract: MITSUBISHI SEMICONDUCTOR MGF0909A L & S BAND GaAs FET [ non ­ matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES 2MIN · High output power P1dB=38.0dBm(TYP , Electric June/2004 MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C TC=0deg TC=50deg TC , 40 Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR MGF0909A L & S BAND Mitsubishi
Original
Abstract: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The MGF0909A, GaAs FET with an N-channel schottky gate, is Unit:millimeters designed for use in UHF band amplifiers. FEATURES 1 · High output power P1dB=38dBm(TYP.) @f=2.3GHz , =22dBm Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET TYPICAL , MGF0909A L, S BAND POWER GaAs FET S11 ,S22 vs. f. S21 ,S12 vs. f. +90° +j50 +j25 +j10 Mitsubishi
Original
MGF0909 J10-0025
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched DESCRIPTION OUTLINE DRAW ING The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for , are subject to change. 1 < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched Keep safety first in Mitsubishi
Original
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched DESCRIPTION The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. OUTLINE DRAW ING Unit : m illim eters FEATURES High output power P1dB=38.0dBm(TYP.) @f=2.3GHz , stage) > MGF0909A L & S BAND / 6W non - matched MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg , ., 2011 2 PAE (%) < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W Mitsubishi
Original
MGF0909a application
Abstract: MITSUBISHI SEMICONDUCTOR (GaAs FET) MGF0909A L, S BAND POWER GaAs FET DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING Unit:millimeiers y FEATURES · High output power PidB=38dBm(TYP.) · High power gain G lp , *1 :Channel to case *2:Pin=22dBm Nov. '97 MITSUBISHI SEMICONDUCTOR (GaAs FET) MGF0909A L , MITSUBISHI SEMICONDUCTOR (GaAs FET) MGF0909A L, S BAND POWER GaAs FET S11 ,S22VS.f. S21 ,Sl2 VS. f -
OCR Scan
Abstract: -21 Flange Type MGF0909A 9A GF-7 MGF0910A 0910A GF-21 MGF09I1A 0911A GF-21 MGF160IB D GF-11 Micro Disk -
OCR Scan
MGF1102 MGF1302 MGF1200 MGF3000 MGF1601 MGF1304 MGF4310 MGF1100 MGF1412 MGF4301 MGF1303B MGFI323 MGF1402B MGFI412B
Abstract: Band ~8 Freq.(GHz) ~X/Ku Band ~14.5 42 MGF0911A MGF0907B GF-21 MGF0909A 38 GF , 4 MGF0909A 37 38 - 10 - - 45 2.3 10 1.3 - - GF Mitsubishi
Original
MGF1907A MGF1403B MGFS45H2201G MGFS40H2201G sirio mgfc36v-a QVC12 MGF4953A MGF4941AL MGF4934AM MGF4931AM GD-16 MGF1908A
Abstract: MGFK36V4045 100 MGF0909A 100 MGFC41Vxxxxx 50 MGFK37V4045 50 MGF09I0A 100 MGFC42Vxxxxx 25 MGFK38Vxxxx 50 -
OCR Scan
MGF4714AP MGF4914D MGF1923 MGF2407A MGF2430A MGF4919 MGF2430 MGF4919E MGF4914E MGF49T4D
Abstract: POWER AMPLIFIERS (Discrete Devices) MGF0911A MGF0907B 38 MGF0909A MGF0805A# 30 MGF0915A , EXAMPLES Min. MGF0805A# MGF0904A MGF0905A MGF0906BL MGF0907BL MGF0909A MGF0910AL MGF0911AL Mitsubishi
Original
MGF4937AM MGF4937 BA012J1 MGFG5H1502 mgfc39v5964 MGF0904 MGF4921AM MGF4935AM MGF4934CM H-CX587-R KI-1311
Abstract: MGF0909A.S2P SMD SMD SMD SMD SMD SMD SMD SMD Tape & Reel MGF0910A.S2P MGF0911A.S2P , MGF0907B MGF0909A MGF0910A MGF0911A MGF0913A MGF0915A MGF0916A MGF0917A MGF0918A MGF0919A Mitsubishi
Original
C42V5964 MGF1302 TRANSISTOR MGFC1402 M67760LC H2 MARKING SOT-89 mmIC M57721 FU-632SEA-V3M FU-632SEA-V6M FU-641SEA-1M1/1M2/1M3/1M4 FU-68SDF-V802M FU-68SDF-V810M FU-445SDF-W1M1B
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched DESCRIPTION The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. OUTLINE DRAW ING Unit : m illim eters FEATURES High output power P1dB=38.0dBm(TYP.) @f=2.3GHz , stage) > MGF0909A L & S BAND / 6W non - matched MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg , ., 2011 2 PAE (%) < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W -
OCR Scan
2sc 1203 F0909A