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MGF0907B Mitsubishi S BAND, GAAS, N-CHANNEL, RF POWER, JFET 37 from $18.75 (Feb 2017) Quest Components Buy

MGF0907b Datasheet

Part Manufacturer Description PDF Type Ordering
MGF0907B Mitsubishi MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
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3 pages,
118.25 Kb

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MGF0907B Mitsubishi L,S BAND POWER GaAs FET
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4 pages,
295.88 Kb

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MGF0907b

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Abstract: < High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND / 10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , FET (small signal gain stage) > MGF0907B L & S BAND / 10W non - matched MGF0907B TYPICAL , ) > MGF0907B L & S BAND / 10W non - matched MGF0907B S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.4(A , signal gain stage) > MGF0907B L & S BAND / 10W non - matched Keep safety first in your circuit ... Mitsubishi
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4 pages,
158.99 Kb

mitsubishi *4a fet MGF0907B TEXT
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Abstract: : RF characteristics data of MGF0907B for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0906B MGF0906B Sample history: MGF0907B : Lot number "2YBA" , HIGH FREQUENCY & OPTICAL DEVICE WORKS MITSIBISHI ELECTRIC CORPORATION (1/4 ) MGF0907B RF TEST , OPTICAL DEVICE WORKS MITSIBISHI ELECTRIC CORPORATION (2/4 ) MGF0907B RF TEST DATA for Freq , CORPORATION ( 3/4 ) MGF0907B Equivalent Circuit for Freq.=2.11-2.17GHz BAND Dec. 2005 HIGH ... Original
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4 pages,
118.46 Kb

MGF0906B MGF0907b MGF0907 TEXT
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Abstract: < High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND / 10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , :Channel-case 1 < High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND / 10W non - matched MGF0907B TYPICAL CHARACTERISTICS( Ta=25deg.C ) ID vs. VGS Po, PAE vs. Pin (f=2.3GHz) ID , ) > MGF0907B L & S BAND / 10W non - matched MGF0907B S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.4(A ... Mitsubishi
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4 pages,
128.24 Kb

MGF0907B TEXT
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Abstract: MITSUBISHI SEMICONDUCTOR MGF0907B DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation • High output power PidB = 40dBm (TYP) @2.3 GHz • High power gain Glp=10 dB (TYP) @2.3GHz • High , case A mitsubishi electric NOV. ' 97 MITSUBISHI SEMICONDUCTOR MGF0907B Lr s BAND POWER , POWER Pm (dBm) Vds (V) A mitsubishi electric NOV. ' 97 MITSUBISHI SEMICONDUCTOR MGF0907B ... OCR Scan
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3 pages,
118.24 Kb

GP 24A 2SC 1570 MGF0907 MGF0907b fet K 793 MGF0907B TEXT
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Abstract: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGF0907B L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004 Mitsubishi ... Mitsubishi
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4 pages,
295.9 Kb

s band MGF0907B Band Power GaAs FET MITSUBISHI TEXT
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Abstract: MITSUBISHI SEMICONDUCTOR MGF0907B L, S BAND POWER GaAs FET DESCRIPTION The MGF0907B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING U nit; n il lt r FEATURES · · · · · Class A operation High output power PidB = 40dB m (TYP) @ 2.3 GHz High power gain G i p = 10 dB (TYP) @ 2.3G H z High power added efficiency ,?add = 37% (TYP) ·2.3G Hz. PidB Hermetically sealed metal-ceramic package with ceramic lid APPLICATION UH F ... OCR Scan
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3 pages,
106.86 Kb

MGF0907B TEXT
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Abstract: MITSUBISHI SEMICONDUCTOR MGF0907B L, S BAND POWER GaAs FET DESCRIPTION The MGF0907B , GaAs FET w ith an N -channel sch o ttky gate, is designed fo r use in UHF band am plifiers. OUTLINE DRAWING U n ii: m illim e te rs FEATURES · · · · · Class A operation High o u tp u t pow er P i d B = 4 0 d B m (TYP) @ 2.3 GHz High pow er gain G lp = 10 dB (TYP) @ 2.3GHz High pow er added e fficiency '?add = 37% (TYP) @ 2.3G H z, PidB H erm etically sealed m etal-ceram ic package w ith ceram ic ... OCR Scan
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3 pages,
81.12 Kb

MGF0907B TEXT
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Abstract: MGF0907B Transistors N-Channel UHF/Microwave MESFET V(BR)DSS (V) V(BR)GSS (V)-15 I(D) Max. (A)6.0 P(D) Max. (W)38 Maximum Operating Temp (øC)175 I(DSS) Min. (A)4.0Â I(DSS) Max. (A)6.0 @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct. g(fs) Max; (S) Trans. conduct;2.0Â @V(DS) (V) (Test Condition)3.0 @I(D) (A) (Test Condition)2.2 V(GS)off Max. (V)-1.0 @V(DS) (V) (Test Condition)3.0 Power Gain Min. (dB)8.0 @V(DD) (V) (Test Condition)10 @I(D ... American Microsemiconductor
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1 pages,
7.32 Kb

MGF0907B TEXT
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Abstract: MITSUBISHI SEMICONDUCTOR MGF0907B L, S BAND POWER GaAs FET DESCRIPTIO N The MGF0907B , GaAs FET w ith an N-channel schottky gate, is designed fo r use in UHF band amplifiers. FEATURES · · · · · Class A operation High o u tp ut power PldB = 4 0 d B m (TYP) @ 2 .3 GHz High power gain G lp - 10 dB (TYP) @2.3GHz High power added efficiency t f a d d - 3 7 % (TYP) @ 2 .3 G H z , PidB Hermetically sealed metal-ceramic package w ith ceramic lid APPLICATION UHF band power ... OCR Scan
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3 pages,
62 Kb

MGF0907B TEXT
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Abstract: Band ~8 Freq.(GHz) ~X/Ku Band ~14.5 42 MGF0911A MGF0911A MGF0907B GF-21 GF-21 MGF0909A MGF0909A 38 GF , LIST MGF0907B 12 14.5 - 9 - - - 12 2.5 0.025 - - GD , of MGF0907B for Freq.=2.11-2.17GHz band f=2.35GHz band May./2005 RF characteristics data of ... Mitsubishi
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16 pages,
3725.89 Kb

MGF0907b x-band mmic lna MGF1403B GF-18 CHINA MOBILE BA01254 BA01282 MGF2430A mgf4953a MGF4961B LNB down converter for Ku band mitsubishi mgf mgf4941al MGF4961 MGF1907A mgfc36v-a QVC12 sirio MGF0909A MGFS40H2201G MGFS45H2201G TEXT
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Abstract: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGF0907B L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004 Mitsubishi ... OCR Scan
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3 pages,
74.18 Kb

GF0907B TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
! MGF0907B(Ta=25deg. C, VDS=10V, lDS=2.4A) ! From 1996/1997 GaAs FET/MMIC Data book # GHZ S MA R 50 ! Freq.S11 S21 S12 S22 ! GHz (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 0.5 0.947 -162.1 3.089 96.7 0.010 45.8 0.823 171.6 0.6 0.943 -165.6 2.793 90.8 0.012 44.1 0.822 170.1 0.7 0.939 -168.7 2.524 85.5 0.014 42.7 0.822 168.7 0.8 0.936 -171.4 2.281 80.7 0.014 41.5 0.821
/datasheets/files/mitsubishi/docs/s2p/mgf0907b.txt
Mitsubishi 21/12/1998 1.87 Kb TXT mgf0907b.txt

CEL Cross Reference Results

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NE650103M-A Buy MGF0907B Buy Mitsubishi Closest Equivalent 10W LSBand Power GaAs MESFET, RoHS compliant