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MGF0907b Datasheet

Part Manufacturer Description PDF Type
MGF0907B Mitsubishi L,S BAND POWER GaAs FET Original
MGF0907B Mitsubishi MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET Scan

MGF0907b

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND / 10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , FET (small signal gain stage) > MGF0907B L & S BAND / 10W non - matched MGF0907B TYPICAL , ) > MGF0907B L & S BAND / 10W non - matched MGF0907B S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.4(A , signal gain stage) > MGF0907B L & S BAND / 10W non - matched Keep safety first in your circuit Mitsubishi
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mitsubishi *4a fet
Abstract: : RF characteristics data of MGF0907B for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0906B Sample history: MGF0907B : Lot number "2YBA" , HIGH FREQUENCY & OPTICAL DEVICE WORKS MITSIBISHI ELECTRIC CORPORATION (1/4 ) MGF0907B RF TEST , OPTICAL DEVICE WORKS MITSIBISHI ELECTRIC CORPORATION (2/4 ) MGF0907B RF TEST DATA for Freq , CORPORATION ( 3/4 ) MGF0907B Equivalent Circuit for Freq.=2.11-2.17GHz BAND Dec. 2005 HIGH -
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MGF0907
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND / 10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , :Channel-case 1 < High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND / 10W non - matched MGF0907B TYPICAL CHARACTERISTICS( Ta=25deg.C ) ID vs. VGS Po, PAE vs. Pin (f=2.3GHz) ID , ) > MGF0907B L & S BAND / 10W non - matched MGF0907B S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.4(A Mitsubishi
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Abstract: MITSUBISHI SEMICONDUCTOR MGF0907B DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES â'¢ Class A operation â'¢ High output power PidB = 40dBm (TYP) @2.3 GHz â'¢ High power gain Glp=10 dB (TYP) @2.3GHz â'¢ High , case A mitsubishi electric NOV. ' 97 MITSUBISHI SEMICONDUCTOR MGF0907B Lr s BAND POWER , POWER Pm (dBm) Vds (V) A mitsubishi electric NOV. ' 97 MITSUBISHI SEMICONDUCTOR MGF0907B -
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fet K 793 2SC 1570 GP 24A GF-21
Abstract: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGF0907B L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004 Mitsubishi Mitsubishi
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MITSUBISHI Band Power GaAs FET s band
Abstract: MITSUBISHI SEMICONDUCTOR MGF0907B L, S BAND POWER GaAs FET DESCRIPTION The MGF0907B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING U nit; n il lt r FEATURES · · · · · Class A operation High output power PidB = 40dB m (TYP) @ 2.3 GHz High power gain G i p = 10 dB (TYP) @ 2.3G H z High power added efficiency ,?add = 37% (TYP) ·2.3G Hz. PidB Hermetically sealed metal-ceramic package with ceramic lid APPLICATION UH F -
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Abstract: MITSUBISHI SEMICONDUCTOR MGF0907B L, S BAND POWER GaAs FET DESCRIPTION The MGF0907B , GaAs FET w ith an N -channel sch o ttky gate, is designed fo r use in UHF band am plifiers. OUTLINE DRAWING U n ii: m illim e te rs FEATURES · · · · · Class A operation High o u tp u t pow er P i d B = 4 0 d B m (TYP) @ 2.3 GHz High pow er gain G lp = 10 dB (TYP) @ 2.3GHz High pow er added e fficiency '?add = 37% (TYP) @ 2.3G H z, PidB H erm etically sealed m etal-ceram ic package w ith ceram ic -
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GF212
Abstract: MGF0907B Transistors N-Channel UHF/Microwave MESFET V(BR)DSS (V) V(BR)GSS (V)-15 I(D) Max. (A)6.0 P(D) Max. (W)38 Maximum Operating Temp (øC)175 I(DSS) Min. (A)4.0Ã' I(DSS) Max. (A)6.0 @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct. g(fs) Max; (S) Trans. conduct;2.0Ã' @V(DS) (V) (Test Condition)3.0 @I(D) (A) (Test Condition)2.2 V(GS)off Max. (V)-1.0 @V(DS) (V) (Test Condition)3.0 Power Gain Min. (dB)8.0 @V(DD) (V) (Test Condition)10 @I(D American Microsemiconductor
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Abstract: MITSUBISHI SEMICONDUCTOR MGF0907B L, S BAND POWER GaAs FET DESCRIPTIO N The MGF0907B , GaAs FET w ith an N-channel schottky gate, is designed fo r use in UHF band amplifiers. FEATURES · · · · · Class A operation High o u tp ut power PldB = 4 0 d B m (TYP) @ 2 .3 GHz High power gain G lp - 10 dB (TYP) @2.3GHz High power added efficiency t f a d d - 3 7 % (TYP) @ 2 .3 G H z , PidB Hermetically sealed metal-ceramic package w ith ceramic lid APPLICATION UHF band power -
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Abstract: Band ~8 Freq.(GHz) ~X/Ku Band ~14.5 42 MGF0911A MGF0907B GF-21 MGF0909A 38 GF , LIST MGF0907B 12 14.5 - 9 - - - 12 2.5 0.025 - - GD , of MGF0907B for Freq.=2.11-2.17GHz band f=2.35GHz band May./2005 RF characteristics data of Mitsubishi
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MGF1907A MGF1403B MGFS45H2201G MGFS40H2201G sirio mgfc36v-a QVC12 MGF4953A MGF4941AL MGF4934AM MGF4931AM GD-16 MGF1908A
Abstract: Outline Classification . MGF0904A 4A GF-7 MGF0905A 5A GF-7 MGF0906B 0906B GF-21 MGF0907B 0907A GF -
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MGF1102 MGF1302 MGF1200 MGF3000 MGF1601 MGF1304 MGF4310 MGF1100 MGF1412 MGF4301 MGF1303B MGFI323 MGF1402B MGFI412B
Abstract: MGF0907B MGF1601B MGF1801B MGF2407A MGF2415A MGF2430A MGF2445 * Si * * * -8 -15 -15 -15 -15 -15 -15 -15 -15 -
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MGF1923 MGF4314E MGF4919G MGFC45V2527 MGFC38V3642 MGF4919 14512H mgf1903b MGF1323 MGF14 MGF1412B MGF1423B MGF1425B MGF1902B
Abstract: MGF0906B 100 MGFC39Vxxxxx 50 MGFX39 Vxxxx 50 MGFK35 Vxxxx 100 MGF0907B 50 MGFC40Vxxxxx 50 MGFX41 Vxxxx 25 -
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MGF4714AP MGF4914D MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter DC bias of gaas FET MGF4919E MGF4914E MGF49T4D MGF4918E
Abstract: POWER AMPLIFIERS (Discrete Devices) MGF0911A MGF0907B 38 MGF0909A MGF0805A# 30 MGF0915A , EXAMPLES Min. MGF0805A# MGF0904A MGF0905A MGF0906BL MGF0907BL MGF0909A MGF0910AL MGF0911AL Mitsubishi
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MGF4937AM MGF4937 MGFG5H1502 mgfc39v5964 BA012J1 MGF0904 MGF4921AM MGF4935AM MGF4934CM H-CX587-R KI-1311
Abstract: ELECTRIC CORPORATION Comments S2P file MGF0904A.S2P MGF0905A.S2P MGF0906B.S2P MGF0907B.S2P , MGF0907B MGF0909A MGF0910A MGF0911A MGF0913A MGF0915A MGF0916A MGF0917A MGF0918A MGF0919A Mitsubishi
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C42V5964 MGF1302 TRANSISTOR MGFC1402 M67760LC H2 MARKING SOT-89 mmIC M57721 FU-632SEA-V3M FU-632SEA-V6M FU-641SEA-1M1/1M2/1M3/1M4 FU-68SDF-V802M FU-68SDF-V810M FU-445SDF-W1M1B
Abstract: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGF0907B L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004 Mitsubishi -
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MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545