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Part : MG300J2YS50 Supplier : - Manufacturer : basicEparts Stock : 10 Best Price : - Price Each : -
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MG300J2YS50 Datasheet

Part Manufacturer Description PDF Type
MG300J2YS50 Toshiba N channel IGBT Original
MG300J2YS50 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original
MG300J2YS50 Toshiba TRANS IGBT MODULE N-CH 600V 300A 7(2-109C1A) Original
MG300J2YS50-AC/EXI-T Toshiba TRANS IGBT MODULE N-CH 600V 300A 7(2-109C1A) Original

MG300J2YS50

Catalog Datasheet MFG & Type PDF Document Tags

mg300j2ys50

Abstract: MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High speed : tf = 0.30µs , ," or "TOSHIBA Semiconductor Reliability Handbook" etc. 2001-02-22 1/5 MG300J2YS50 , MG300J2YS50 2001-02-22 3/5 MG300J2YS50 2001-02-22 4/5 MG300J2YS50 2001-02-22 5/5
Toshiba
Original
2-109C1A 000707EAA2

TOSHIBA MG300J2YS50

Abstract: MG300J2YS50 MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input , current Screw torque (Terminal / mounting) 1 A A 2001-08-09 MG300J2YS50 Electrical , 2 2001-08-09 MG300J2YS50 3 2001-08-09 MG300J2YS50 4 2001-08-09 MG300J2YS50 5 2001-08-09 MG300J2YS50 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
Toshiba
Original
TOSHIBA MG300J2YS50 mg300* toshiba
Abstract: TOSHIBA TO SH IBA GTR M O D U LE SILICON N CH AN N EL IGBT MG300J2YS50 M f i ? n , contained herein is subject to change w ithout notice. 1997 03-03 1/5 - TOSHIBA MG300J2YS50 , ' 1997 03-03 2/5 - TOSHIBA MG300J2YS50 IC - VCE IC - VCE COLLECTOR-EMITTER VOLTAGE V q e , (V) 1997 03-03 3/5 - TOSHIBA MG300J2YS50 IC - VGE > w U «f o > tä w H H 400 VCE^= o , MG300J2YS50 ip - Vf H * Z S 02 ^^ ce" 8e ÎM O h U5 *8 mctf >cé M fe] K> ¡¿a S 100 50 30 trr, irr -
OCR Scan
1259C

mg300* toshiba

Abstract: 300AVGE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features · High input , MG300J2YS50 Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP , 2/6 MG300J2YS50 3/6 PW03190796 TOSHIBA CORPORATION MG300J2YS50 TOSHIBA CORPORATION PW03190796 4/6 MG300J2YS50 5/6 PW03190796 TOSHIBA CORPORATION MG300J2YS50
Toshiba
Original
300AVGE

TOSHIBA MG300J2YS50

Abstract: mg300j2ys50 MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input , current Screw torque (Terminal / mounting) 1 A A 2001-08-09 MG300J2YS50 Electrical , 2 2001-08-09 MG300J2YS50 3 2001-08-09 MG300J2YS50 4 2001-08-09 MG300J2YS50 5 2001-08-09 MG300J2YS50 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
Toshiba
Original
Abstract: TOSHIBA TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG300J2YS50 MG300J2 YS50 HIGH P O W , 420 TOSHIBA MG300J2YS50 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL MIN. TYP. MAX. UNIT , TOSHIBA MG300J2YS50 le - VCE le - VCE IC - V CK VCE - VGE CO M M O N E M IT T E R Tc , E R V O L T A G E 422 TOSHIBA MG300J2YS50 le - V g e VCE =ov vce, vqe - Qg , C O LLECTO R C U R R EN T 423 TOSHIBA MG300J2YS50 if - V f trr» Ir r " IF - -
OCR Scan
961001EAA
Abstract: T O SH IB A MG300J2YS50 MG300 J 2 YS 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT , e w it h o u t n o tic e . 1997 03-03 1/5 - T O SH IB A MG300J2YS50 ELECTRICAL , MG300J2YS50 O o tr w o H O 50 o C 3 ts z t-g O > 1 1 1 1 1 H £3 50 P3 , ) MG300J2YS50 P t=j > £ o M £> O HI > Z o w 50 0 1 < o H > O M c QJ H , A MG300J2YS50 If â'"Vf tr r , Irr â'" IF 100 50 Zi w t í* tí + P r. 2 H -
OCR Scan

LT 1000-TI

Abstract: T O SH IB A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300J2YS50 MG300 J 2Y S 50 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. · · · · · · The Electrodes are Isolated , to change w ith o u t notice. 1997 03-03 - 1/5 T O SH IB A MG300J2YS50 ELECTRICAL , < o M c o < n H 1 MG300J2YS50 T O SH IB A MG300J2YS50 l e - Vg e 400 , N T 1997 03-03 - 4/5 T O SH IB A MG300J2YS50 If - Vf w tí* tí + >hS E-< Zi P r
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OCR Scan
LT 1000-TI 961001EAA2

TOSHIBA MG300J2YS50

Abstract: L20A TOSHIBA MG300J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 300J2 YS 50 HIGH POWER , to change without notice. 1997-03-03 1/5 TOSHIBA MG300J2YS50 ELECTRICAL CHARACTERISTICS (Ta = 25 , TOSHIBA MG300J2YS50 IC - VCE IC - VCE 640 480 320 160 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE , VQE (V) 20 1997-03-03 3/5 TOSHIBA MG300J2YS50 le - VGE VCE, VGE - QG 10 COMMON EMITTER Vce , MG300J2YS50 If - VF Irr - IF 640 480 320 160 common cathode vge=o tu / /2 5 iL
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OCR Scan
L20A TRANSISTOR BJ 040

TU 32 300A

Abstract: MG300J2YS50 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. · · · T h e E le c , 0 (AC 1 m in .) 3 /3 W °C A ·c V Nm 214 MG300J2YS50 ELECTRICAL CHARACTERISTICS (Ta = 25 , T E R Te-l25*C vC E - f o N N O - > 1 8t- ft 8 Vg e MG300J2YS50 lC Vg e vce. vge , ) MG300J2YS50 COLLECTOR EMITTER VOLTAGE Vce (V) PO 00 COLLECTOR CURRENT \q TRANSIENT , > \ < \) 1 1 i i i i i i ADDITIONAL DATA MG300J2YS50 TYPICAL INVERTER PHASE CURRENT AT TCASE -
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OCR Scan
TU 32 300A

mg500q1us1

Abstract: mg75j6es50 . 73 MC.300.I11 SSI . 61* MG300J2YS50
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OCR Scan
MG100J2YS50 MG25Q2YS40 MG50Q2YS40 MG100Q2YS42 MG400Q1US41 mg500q1us1 mg75j6es50 mg300q1us41 E87989 MG50J2YS50 MG50J6F MG75J2YS50 MG75J6ES50

MG75J2YS40

Abstract: MG100J2YS45 MG300J2YS50 MG400J2YS50 2-95A1A 2-10901A 2-109D1A MG200Q2YS1 2-109B4A MG200Q2YS9 2-109C1A Î YS , MG50J2YS50 2-94D1A MG100J2YS50 MG150J2YS50 2-94D1A 2-95A1A MG300J2YS50 2-109C1A MG25Q2YS91 2-94D1A
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OCR Scan
MG400Q1US11 MG50J2YS45 MG75J2YS45 MG100J2YS45 MG150J2YS45 MG200J2YS45 MG75J2YS40 MG300Q1US MG200Q1US11 2-109A4A MG300Q1US11 MG500Q1US11 MG400Q1US21

GT80J101

Abstract: MG75J6ES50 INDEX Page , Discrete Types GT8J101 . . 69-71 GT8J102 (SM ). . 72-75 GT8Q101 GT15J101 GT15J102 . . 76-78 . . 82-84 . . 85-87 GT8Q102 (SM) . . 79-81 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 Page . 214-219 . 220-225 . 226-231 . . 232-235 MG100Q1JS40 MG150J1ZS50 MG150Q1JS40 MG200Q1JS40 Page . 398-402 . . 408-412 . 413-417 . . 418-422 MG100Q1ZS40 . 403-407
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OCR Scan
MG75Q2YS40 MG150Q2YS40 MG300Q2YS40 GT60M301 GT80J101 MG15J6ES40 MG360V1US41 mg100j6es5 MG8Q6ES42 6ES42 G25Q2YS40 6ES40

MG15J6ES40

Abstract: MG300J2YS50 .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits A llowed n u m b er o f short-circuits Junction tem peratu re before short-circuit > 1 100 < 125 °C s Electrical Conditions for 600 V Types T ype No. MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 MG 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG300J1US51 MG300J2YS50 MG400JUIS51 MG400J2YS50 Rg min / £2 150 100 24 24 18 18 13 13 6.2 4.2 3.0 1.8 2.0 2.4 VCE/V 350 350 350 350 350 350 350 350 350 350 350
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OCR Scan
MG200Q2YS40 MG300Q2YS4 MG15Q6ES42 MG25Q6ES42 MG50Q6ES40 MG200Q1US41 MG500Q11JS1

G50Q2YS40

Abstract: MG8Q6ES42 MG200Q1ZS40 M G200Q2YS40 M G200Q2YS50 MG240V1US41 MG300J1US51 MG300J2YS50 MG300Q1US41 MG300Q1US51 MG300Q2YS40
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OCR Scan
GT8G101 G50Q2YS40 G75Q1BS11 MIG30J103H MIG50J904H MP6753 mg150q1js mg50j1bs11 M 205 648 GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101

2-94D4A

Abstract: MG200J2YS50 800 2400 2-109A4A 1 MG200J2YS50 600 200 400 2,7 200 150 150 900 2-95A1A 2 MG300J2YS50 600 300 600 2
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OCR Scan
2-95A4A MG75Q2YS50 2-94D4A 2-94A2A Toshiba MG200Q2YS40 mg200q2ys50 MG*Q2YS51 2-109F1A MG150Q2YS50 MG150Q2YS51 2-109C4A MG200Q2YS50

IGBT 200A 1200V

Abstract: T0247 MG15Q6ES42 MG200J2YS50 MG200Q1US41 MG200Q2YS40 MG200Q2YS50 MG25Q6ES42 MG300J2YS50 MG300Q1US41
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OCR Scan
BUP212 BUP313D BUP314 BUP314D IRG4PC50FD IRG4PC50UD IGBT 200A 1200V T0247 T0220AB IGBT IRG4BC20KD IGBT 1200V 60A BUP213 BUP313

GT250101

Abstract: MG150J2YS40 MG200J2YS40 MG300J2YS40 MG400J2YS40 2-95A1A 2109D1A 2-109C1A MG200J2YS50 MG300J2YS50 MG400J2YS50 2-95A1A , MG300J2YS50 2-109C1A MG400Q1US21 WG500Q1US21 MG600Q1US45 2-109A4B 2-109A4B 2-109A4B Ï, » 600
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OCR Scan
GT250101 MG150J2YS40 MG75Q2YS11 MG200Q1JS9 MG50J6ES40 MG200Q2YS91 T0-220N 2-99A1A 2-99B1A

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron TOSHIBA 94x48 HALF BRIDGE 600 200 GP250MHB06S MG300J2YS50 TOSHIBA 108x62 HALF
Dynex
Original
FZ1600R12KF4 FZ800R12KF4 BSM300GB60DLC IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec MG200J2YS50 mitsubishi 150Ne120 DS5468 DS5468-2 FZ1200R33KF2 DIM1200ESM33 DIM1600FSM12

IGBT cross reference semikron eupec

Abstract: 150Ne120 TOSHIBA 94x48 HALF BRIDGE 600 200 GP250MHB06S MG300J2YS50 TOSHIBA 108x62 HALF
Dynex
Original
Eupec Power Semiconductors FZ800R16KF4 IGBT mitsubishi mg300j2ys50 eupec igbt FF600R17KF6B2 MBM200GS12 fuji igbt technical data FF400R12KF4 140X130 DIM400DDM12 FF600R12KF4 DIM800DDM12 FF80012KF4
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