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    MG25Q6ES50 Price and Stock

    Toshiba America Electronic Components MG25Q6ES50A

    SILICON N CHANNEL IGBT GTR MODULE Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
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    MG25Q6ES50 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG25Q6ES50 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG25Q6ES50A Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF