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Part : 1SD536F2-MG1200FXF1US53 Supplier : Power Integrations Manufacturer : Richardson RFPD Stock : - Best Price : $348.00 Price Each : $388.00
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MG1200FXF1US53 Datasheet

Part Manufacturer Description PDF Type
MG1200FXF1US53 Toshiba TRANS IGBT MODULE N-CH 3300V 1200A Original

MG1200FXF1US53

Catalog Datasheet MFG & Type PDF Document Tags

MG1200FXF1US53

Abstract: IEGT MG1200FXF1US53 TOSHIBA GTR Module Silicon N-Channel IEGT MG1200FXF1US53 High Power Switching , V, LS - 160 nH, RG(off) = 5.1 , VGE = ±15V, Tj = 125°C = = 1 2003-05-10 MG1200FXF1US53 , 2003-05-10 MG1200FXF1US53 Ic-VCE (Reference Data) IF-VF (Reference Data) Tj=125°C VGE , 2003-05-10 MG1200FXF1US53 Edsw-IF (Reference Data) Tj=125°C 1 0.8 0.6 0.4 Vcc=1800V, VGE , Time t(s) 4 2003-05-10 MG1200FXF1US53 IEGT(P) RG(off) load Ls100nH Vcc Ls160nH
Toshiba
Original
IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT 800 kw Toshiba AC motor IEGT toshiba

IEGT

Abstract: TOSHIBA IEGT 1750 1500 MG1200FXF1US53 Ic(500A/div) 1250 1000 2.5 3 3.5 4 4.5 5 5.5 , MG800FXF1US53 MG1200FXF1US53 Line-up: 3 devices Part Number Base-size Ratings Circuit MG1200FXF1US53 140 × 190 mm 1200 A MG800FXF1US53 140 × 130 mm MG400FXF2YS53 140 × 130 mm
Toshiba
Original
BEE0030A MG800FXF toshiba gto MG800FX MG1200FXF1US51 IEGT 1500

MG1200FXF1US53

Abstract: 4500a MG1200FXF1US53 TOSHIBA (Target Spec.) TOSHIBA GTR MODULE MG1200FXF1US53 S ILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features High Input , degC 2002-01-17 MG1200FXF1US53 TOSHIBA (Target Spec.) ELECTRICAL CHARACTERISTICS(Tvj , -to-200-um) coating of grease. 2002-01-17 MG1200FXF1US53 TOSHIBA (Target Spec.) Unit:mm Outline 2 , .0 21 18 7 .8 ±1 .0 + 2 .5 19 0 .0 - 1 .5 2002-01-17 TOSHIBA MG1200FXF1US53
Toshiba
Original
4500a Toshiba IGBT 1200A 3300V YG6260 ba qu diode ba 124 transistor BA RW