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MG100G1FL1 Datasheet

Part Manufacturer Description PDF Type
MG100G1FL1 N/A Catalog Scans - Shortform Datasheet Scan
MG100G1FL1 N/A Catalog Scans - Shortform Datasheet Scan
MG100G1FL1 N/A Power and Industrial Semiconductors Data Book Scan

MG100G1FL1

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Speed : tf = 2(js (Max.) (Ic=100A) MG100G1FL1 EQUIVALENT CIRCUIT MAXIMUM RATINGS (Ta , -40 ~125 2500 (AC 1 Minute) 10/30 30 - 717 MG100G1FL1 ELECTRICAL CHARACTERISTICS , SATURATION V O LTAGE V B E (s a t ) (V) P a CA at DC CURRENT GAIN h FE lOOOi w_ MG100G1FL1 MG100G1FL1 If - vp SWITCHING CHARACTERISTIC FORWARD CURRENT SAFE OPERATING AREA nn REVERSE -
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mg100g
Abstract: TOSHIBA {DISCRETE/OPTO} TO 9097250 TOSHIBA (DISCRETE/OPTO) SEMICONDUCTOR TECHNICAL DATA DE J TCH72S0 ODlbESb 5 90D 16256 Df-33-2^ tfoshilu MG100G1FL1 MG100G1AL3 MAXIMUM RATINGS (Ta , -33-35" 1 a o â < s o , SEMICONDUCTOR TECHNICAL DATA MG100G1AL3 MG100G1FL1 -io - veco H z a I O m g ta 100 80 30 as à , - TOSHIBA {DISCRETE/OPTO} TO DF|im7asa Doitasi a 90D 16259 DT-33-35" I MG100G1AL3 MG100G1FL1 -
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toshiba mg100g1al3 Toshiba transistor Ic 100A
Abstract: R egulator T ransisto rs Bipolar Darlington (1) Connection V ceo (SUS) (V) 450 O ro* Maximum Rating ic -
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S3885 MG30H1BL1 MG150H1FL1 MG300H1FL1 MG400H1FL1 MG50G2YL9 MP6502 MG30G63L2 MP6504 2SD1314 MG50G1BL3 MG30G18L4 MG15H1AL1
Abstract: 9097250 TOSHIBA (DISCRETE/OPTO) TOSHIBA {DISCRETE/OPTO} GTR Modules IG 90D 16488 D TD-iVcihU UU JihMöö Jb Bipolar Darlington CONNECTION MAXIMUM RATING CIRCUIT SYMBOL CKT TYPE Veto (SUS) (V) le (A) IO 15 20 25 30 50 75 100 150 200 300 400 450 MGI5G1AL3 MG100G1AL3 550 MG200H1ALZ 450 MG30G1BL3 MG50G1BLà MG75G1BL1 1000 MG25M1BK1 MG50M1BK1 450 MG100G1FL1 550 M6150H1FLI ffiiOHlFLl MG30CH1FU MGflCHIFLL 550 MGM0HIFK1 1000 MGMCMIFK1 MGJ00M1FK1 450 -
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MG30G2CL3 MG50M2CK2 MG75M2YK1 MG30G2DL1 MG10G6EL2 MG20G6EL1 MG30G6EL1 MG50N2YS1 MG330G1CL1 MG300H1UL1 MG200M11K1 MG30CM1UK1 MG200Q1UK1 MG300Q1UK1
Abstract: MG100G1FL1 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case (Y/N)Yes V(BR)CEO (V)450ö V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W)600 Maximum Operating Temp (øC)150Ãu h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)100 @VCE (test)5.0 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)100 @I(B) (A) (Test Condition)2.0 t(r) Max. (s) Rise time t(f) Max. (s) Fall time.2.0u Package StyleModule-s Pinout Equivalence Code4-5 Ckt American Microsemiconductor
Original
TR00400005
Abstract: MG75H6EL1 MG75M1AL1 MG75M2CK1 MG75M2YK1 MG75N2YS1 MG75Q2YK1 MG80S2YK1 MG100G1AL3 MG100G1FL1 MG100G2CL1 -
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2SK385 2SK529 2SK531 2SK673 2SK674 2SK791 2SK1124 mg15g1al3 MG400H1 2sk525 MP6101 2SJ115 2SJ123 2SJ147 2SK357 2SK358
Abstract: -3 100 0. 208 0.65 FL-1 2-68C1A MG100G1FL1 2.0 2.7 100 2.0 2 12 2 2.0 -2.0 300 3 1.7 100 1.0 100 -3 -
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MG30G1BL4 MG30G1JL1 MG60M1AL1 2-33c1a MG30GIBL3 2-22b1a MG200M1FK1 2-22B1A 2-33F1A 2-33D1A 2-33C1A 2-68A2A
Abstract: 3 1.5 100 2.0 100 -3 100 0. 208 0.65 FL-1 2-68C1A MG100G1FL1 2.0 2.7 100 2.0 2 12 2 2.0 -2.0 300 3 -
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MG200 MG15G1AL3 equivalent MG25MIBK1 M-10A2A M-10A2B M-11A2A M-12A6A M-12B6A
Abstract: 550 S3BB5® MG100G1FL1 450 FL MG150H1FL1 MG200H1FL1A MG300H1FL1 MG400H1FL1 FK 550 -
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j2y transistor 2sb834 MG100M2CK1 MP3103 MP4704 T15J10
Abstract: -3 100 0. 208 0.65 FL-1 2-68C1A MG100G1FL1 2.0 2.7 100 2.0 2 12 2 2.0 -2.0 300 3 1.7 100 1.0 100 -3 -
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MZ 13001 TRANSISTOR BD559 w3819b field effect transistor Transistor B0243C 7119 amperex NEC Tokin oe 907 VV276