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MCR08BT1,115 WeEn Semiconductor Co Ltd Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, PLASTIC, SC-73, 4 PIN visit Digikey Buy
MCR08BT1G Littelfuse Inc Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-261AA, TO-261, 4 PIN visit Digikey Buy

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Part : MCR08BT1,115 Supplier : WeEn Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0769 Price Each : $0.0839
Part : MCR08BT1,115 Supplier : WeEn Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0869 Price Each : $0.1608
Part : MCR08BT1G Supplier : Littelfuse Manufacturer : Newark element14 Stock : 40 Best Price : $0.3180 Price Each : $0.68
Part : MCR08BT1G Supplier : ON Semiconductor Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.52 Price Each : $0.5420
Part : MCR08BT1G Supplier : Littelfuse Manufacturer : Future Electronics Stock : 119,000 Best Price : $1.29 Price Each : $1.29
Part : MCR08BT1 Supplier : Philips Semiconductors Manufacturer : Bristol Electronics Stock : 878 Best Price : - Price Each : -
Part : MCR08BT1G Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 91 Best Price : - Price Each : -
Part : MCR08BT1,115 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : 21,000 Best Price : $0.1379 Price Each : $0.1379
Part : MCR08BT1 Supplier : ON Semiconductor Manufacturer : ComSIT Stock : 945 Best Price : - Price Each : -
Part : MCR08BT1G Supplier : Littelfuse Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.30 Price Each : $0.6470
Part : MCR08BT1G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : - Best Price : £0.2140 Price Each : £0.4530
Part : MCR08BT1G Supplier : Littelfuse Manufacturer : New Advantage Stock : 118,000 Best Price : $1.52 Price Each : $1.61
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MCR08BT1 Datasheet

Part Manufacturer Description PDF Type
MCR08BT1 Motorola SCR 0.8 AMPERE RMS 200 thru 600 Volts Original
MCR08BT1 NXP Semiconductors MCR08BT1 - Thyristor; logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 200 V Original
MCR08BT1 On Semiconductor Sensitive Gate Silicon Controlled Rectifiers Original
MCR08BT1 On Semiconductor Sensitive Gate Silicon Controlled Rectifiers Original
MCR08BT1 Philips Semiconductors Thyristor Logic Level Original
MCR08BT1 Philips Semiconductors MCR08BT1, Thyristor, logic level Original
MCR08BT1 Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original
MCR08BT1,115 NXP Semiconductors MCR08 - Silicon Controlled Rectifier, 0.8 A, 200 V, SCR, PLASTIC, SC-73, 4 PIN Original
MCR08BT1,115 NXP Semiconductors Thyristor; logic level - I<sub>GT</sub>: 0.05 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 200 V; Package: SOT223 (SC-73); Container: Tape reel smd Original
MCR08BT1-D On Semiconductor Sensitive Gate Sillicon Controlled Rectifiers Reve Original
MCR08BT1G On Semiconductor Sensitive Gate Silicon Controlled Rectifier; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 Original
MCR08BT1 Series Motorola SOT-223 SCR Original
MCR08BT1T/R NXP Semiconductors Thyristor; logic level - I<sub>GT</sub>: 0.05 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 200 V Original

MCR08BT1

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SO T2 23 MCR08BT1 SCR 23 July 2014 Product data sheet 1. General description , . 9 Scan or click this QR code to view the latest information for this product MCR08BT1 NXP , . Ordering information Table 3. Ordering information Type number Package Name MCR08BT1 MCR08BT1 Product data sheet Description Version SC-73 plastic surface-mounted package with , disclaimers. 23 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 14 MCR08BT1 NXP Semiconductors
Original

MCR08BT1

Abstract: specification Product specification MCR08BT1_HG v.2 MCR08BT1 v.1 - MCR08BT1 v.3 MCR08BT1_HG v.2 MCR08BT1 v , SO T2 23 MCR08BT1 Thyristor; logic level Rev. 4 - 2 November 2011 Product data sheet , MCR08BT1 SC-73 Description plastic surface mounted package with increased heat sink; 4 leads Version SOT223 Type number NXP Semiconductors MCR08BT1 Thyristor; logic level 4. Limiting values Table 3 , on-state current; maximum values MCR08BT1 All information provided in this document is subject to legal
NXP Semiconductors
Original

MCR08BT1

Abstract: motorola 8840 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR08BT1/D SOT223 SCR , for Reliability and Uniformity Surface Mount Package Devices Supplied on 1 K Reel MCR08BT1 Series , Voltage(1) (1/2 Sine Wave, RGK = 1000 , TJ = 25 to 110°C) MCR08BT1 MCR08DT1 MCR08MT1 On-State Current RMS , MCR08BT1 Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1 K) Characteristic , Impedance and Power Testing of SOT-223 2 Motorola Thyristor Device Data MCR08BT1 Series IT
Motorola
Original
motorola 8840 MCR08BT1/D 318E-04
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCR08BT1 Series* SOT-223 SCR Silicon Controlled , r r m 200 400 600 MCR08BT1 MCR08DT1 MCR08MT1 'T(RMS) Amps 10 Amps |2t 0.4 ,   _ M o to ro la T h y ris to r D evice D ata MCR08BT1 Series ELECTRICAL CHARACTERISTICS O c  , 3 3 MCR08BT1 Series - r -|-1 TYPICAL MAXIMUM -IDEVICE MOUNTED O I N FIGURE 1 , 7Ã1 M o to ro la T h y ris to r D evice Data MCR08BT1 Series Figure 8. Power Dissipation -
OCR Scan
0CH0303 1Q304

introduction to power semiconductors

Abstract: MCR08BT1 DISCRETE SEMICONDUCTORS DATA SHEET MCR08BT1 Thyristor logic level Product specification July , . MCR08BT1 QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER Repetitive peak off-state , . pcb mounted, minimum footprint pcb mounted; pad area as in fig:14 - MCR08BT1 TYP. 156 70 MAX , Rev 1.000 Philips Semiconductors Product specification Thyristor logic level MCR08BT1 , specification Thyristor logic level MCR08BT1 3 2.5 2 1.5 IGT(Tj) IGT(25 C) 5 IT / A Tj = 125 C
Philips Semiconductors
Original
introduction to power semiconductors APPCHP1

MCR08BT1

Abstract: 3SOT-223 . MCR08BT1_HG_2 20011023 Product specification - 9397 750 08943 MCR08BT1_1 MCR08BT1_1 , Doc. number Supersedes MCR08BT1_3 20041129 Product data sheet - 9397 750 13513 MCR08BT1_HG_2 · The format of this data sheet has been redesigned to comply with the new presentation , MCR08BT1 Thyristor; logic level Rev. 03 - 29 November 2004 Product data sheet SOT223 1 , : Ordering information Type number Package Name MCR08BT1 Description Version SC
Philips Semiconductors
Original
3SOT-223

MCR08BT1

Abstract: Advance Information MCR08BT1 Series* * Motorola Preferred Device« SOT-223 SCR Silicon , 25 to 110°C) MCR08BT1 MCR08DT1 MCR08MT1 On-State Current RMS (Tq = 80°C) Peak Non-repetitive Surge , 3-174 MCR08BT1 Series ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted, R q k = 1 Kß , DEVICE DATA 3-175 MCR08BT1 Series 1.0 2.0 3.0 4.0 vr, INSTANTANEOUS ON-STATE VOLTAGE , : Anode Tab M O TO RO LA THYRISTOR DEVICE DATA 3-176 MCR08BT1 Series MAXIMUM AVERAGE POWER P(AV
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OCR Scan

MCR08BT1-D

Abstract: rgk 20/2 MOTOROLA Order this document by MCR08BT1/D SEMICONDUCTOR TECHNICAL DATA MCR08BT1 Series , °C) Value VDRM, VRRM Volts 200 400 600 MCR08BT1 MCR08DT1 MCR08MT1 On-State Current RMS (TC = , MCR08BT1 Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1 K) Characteristic , (AMPS) MCR08BT1 Series 4.0 3.0 160 150 140 130 120 110 100 90 80 70 60 50 40 30 , ), AVERAGE ON-STATE CURRENT (AMPS) Figure 7. Current Derating Reference: Anode Tab 3 MCR08BT1
Motorola
Original
rgk 20/2

MCR08BT1

Abstract: . MCR08BT1 QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER Repetitive peak off-state , . pcb mounted, minimum footprint pcb mounted; pad area as in fig:14 TYP. 156 70 MCR08BT1 MAX. 15 - , Semiconductors Product specification Thyristor logic level MCR08BT1 1 Ptot / W conduction form , MCR08BT1 3 2.5 2 1.5 IGT(Tj) IGT(25 C) 5 IT / A Tj = 125 C Tj = 25 C 4 Vo = 1.0 V Rs = , INSTRUCTIONS MCR08BT1 Dimensions in mm. 3.8 min 1.5 min 2.3 1.5 min (3x) 6.3 1.5 min 4.6
Philips Semiconductors
Original

MCR08BT1

Abstract: motorola 8840 ility and U nifo rm ity S u rfa ce M ount P a ckage D evices S u p plied on 1 K R eel MCR08BT1 Series , Voltage!1) (1/2 Sine Wave, Rq k - 1000 n , T j - 25 to 110°C) MCR08BT1 MCR080T1 MCR08MT1 On-State Current , Motorola Thyristor Device Data MCR08BT1 Series ELECTRICAL CHARACTERISTICS (Tq - 25°C unless otherwise , 3-133 MCR08BT1 Series lT, INSTANTANEOUS O N-STATE CURRENT (AMPS) 1.0 0.1 - - - 0.01 , MCR08BT1 Serles I, TIME (SECONDS) Figure 8. Power Dissipation 2.0 Figure 9. Thermal Response
-
OCR Scan
MCR08I

MCR08BT1

Abstract: BT134W DISCRETE SEMICONDUCTORS DATA SHEET MCR08BT1 Thyristor logic level Product specification July 2001 Philips Semiconductors Product specification Thyristor logic level MCR08BT1 , Rev 1.000 Philips Semiconductors Product specification Thyristor logic level MCR08BT1 , Product specification Thyristor logic level MCR08BT1 Tsp(max) / C Ptot / W 1 conduction , Thyristor logic level 3 MCR08BT1 IGT(Tj) IGT(25 C) 5 IT / A Tj = 125 C Tj = 25 C 2.5
Philips Semiconductors
Original
BT134W BT169W SC18 SCA73 XXXXXX/700/02/

MCR08BT1

Abstract: MOTOROLA Order this data sheet by MCR08BT1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MCR08BT1 Series M o to ro la P referre d D evices SOT-223 SCR Silicon Controlled Rectifiers , to 110°C) MCR08BT1 MCR08DT1 MCR08MT1 On-State Current RMS (Tq = 80°C) Peak Non-repetitive Surge , Testing of SOT-223 MOTOROLA 2 MCR08BT1 Series C/D Q_ S < z 10 I- ILI CC CC 1.0 , Derating Reference: Anode Tab MCR08BT1 Series MOTOROLA 3 - -f\ ANGLE - la Uh a =
-
OCR Scan
MOTOS091 2PHX31320D-0
Abstract: TJ = 25 to 110°C) MCR08BT1 MCR08MT1 VDRM, VRRM On-State Current RMS (All Conduction Angles , 10 Seconds Maximum) November, 2008 â' Rev. 6 Device Package Shippingâ'  MCR08BT1 , SOTâ'223 1000/Tape &Reel MCR08BT1G SOTâ'223 (Pbâ'Free) 1000/Tape &Reel MCR08MT1 , for future use and best overall value. Publication Order Number: MCR08BT1/D MCR08B, MCR08M , Representative. MCR08BT1/D ON Semiconductor ON Semiconductor
Original

MCR08BT1-D

Abstract: rgk 20/2 25 to 110°C) MCR08BT1 MCR08MT1 VDRM, VRRM On-State Current RMS (All Conduction Angles; TC = , . 5 Device Package Shipping MCR08BT1 Stresses exceeding Maximum Ratings may damage the , , LLC, 2006 ORDERING INFORMATION 1 SOT-223 1000/Tape &Reel MCR08BT1G SOT-223 (Pb-Free , : MCR08BT1/D MCR08B, MCR08M ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min , ://onsemi.com 6 For additional information, please contact your local Sales Representative. MCR08BT1/D
ON Semiconductor
Original
MCR08MT1G

MCR08BT1G

Abstract: MCR08MT1G Peak Repetitive Off-State Voltage (Note 1) (Sine Wave, RGK = 1 kW TJ = 25 to 110°C) MCR08BT1 , INFORMATION Device Package Shipping MCR08BT1 Stresses exceeding Maximum Ratings may damage the , Maximum) 1 1 SOT-223 1000/Tape &Reel MCR08BT1G SOT-223 (Pb-Free) 1000/Tape &Reel
ON Semiconductor
Original

CR08M

Abstract: CR08B Package · Device Marking: MCR08BT1: CR08B; MCR08MT1: CR08M, and Date Code http://onsemi.com SCRs , °C) MCR08BT1 MCR08MT1 VDRM, VRRM On-State Current RMS (All Conduction Angles; TC = 80°C) IT(RMS , , LLC, 2000 May, 2000 ­ Rev. 3 1 Device Package Shipping MCR08BT1 SOT223 16mm , are recommended choices for future use and best overall value. Publication Order Number: MCR08BT1 , information, please contact your local Sales Representative. http://onsemi.com 12 MCR08BT1/D ON
ON Semiconductor
Original
ON cr08m SMD310

MCR08MT1

Abstract: rgk 20/2 to 110°C) MCR08BT1 MCR08MT1 VDRM, VRRM On-State Current RMS (All Conduction Angles; TC = 80 , Gate 4 Anode ORDERING INFORMATION Device Package Shipping MCR08BT1 Stresses , MCR08BT1G SOT-223 (Pb-Free) 1000/Tape &Reel MCR08MT1 SOT-223 1000/Tape & Reel MCR08MT1G , . Publication Order Number: MCR08BT1/D MCR08B, MCR08M ELECTRICAL CHARACTERISTICS (TC = 25°C unless , local Sales Representative. MCR08BT1/D ON Semiconductor
ON Semiconductor
Original
VS400

ON cr08m

Abstract: cr08b Package · Device Marking: Logo, MCR08BT1: CR08B; MCR08MT1: CR08M, and Date Code http://onsemi.com , 110°C) MCR08BT1 MCR08MT1 VDRM, VRRM On-State Current RMS (All Conduction Angles; TC = 80 , Industries, LLC, 1999 February, 2000 ­ Rev. 2 1 Device Package Shipping MCR08BT1 SOT223 , : MCR08BT1/D MCR08B, MCR08M THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance , information, please contact your local Sales Representative. http://onsemi.com 12 MCR08BT1/D ON
ON Semiconductor
Original

CR08M

Abstract: CR08B Package · Device Marking: MCR08BT1: CR08B; MCR08MT1: CR08M, and Date Code http://onsemi.com SCRs 0.8 , Repetitive Off­State Voltage(1) (Sine Wave, RGK = 1000 , TJ = 25 to 110°C) MCR08BT1 MCR08MT1 On-State Current , ASSIGNMENT Cathode Anode Gate Anode ORDERING INFORMATION °C °C Device MCR08BT1 Package SOT223 Shipping , : MCR08BT1/D MCR08B, MCR08M THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to
ON Semiconductor
Original
On semiconductor date Code sot-223

CR08M

Abstract: cr08b Package · Device Marking: MCR08BT1: CR08B; MCR08MT1: CR08M, and Date Code http://onsemi.com SCRs 0.8 , Repetitive Off-State Voltage(1) (Sine Wave, RGK = 1000 , TJ = 25 to 110°C) MCR08BT1 MCR08MT1 On-State Current , ASSIGNMENT Cathode Anode Gate Anode ORDERING INFORMATION °C °C Device MCR08BT1 Package SOT223 Shipping , : MCR08BT1/D MCR08B, MCR08M THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to
ON Semiconductor
Original
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