NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| mch3412 | Sanyo Semiconductor | Ultrahigh-Speed Switching Applications |
4 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Ordering number : ENN6901 ENN6901 MCH3412 N-Channel Silicon MOSFET MCH3412 Ultrahigh-Speed , switching. 4V drive. unit : mm 2167 [MCH3412] 0.25 · 0.3 0.15 2 0.65 0.25 1 2.1 , , TOKYO, 110-8534 JAPAN 13001 TS IM TA-3099 TA-3099 No.6901-1/4 MCH3412 Continued from preceding page. , VIN D VOUT PW=10us D.C.1% G P.G MCH3412 50 S ID - VDS 4.0 1.6 , , Ta - °C 120 140 160 IT02945 IT02945 No.6901-2/4 MCH3412 3 25° C 2 C 5° ... | Original |
4 pages, |
MCH3412 sw 13001 13001 data tr 13001 13001 SD ENN6901 ENN6901 abstract |
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| Abstract: No. N 6 9 8 1 CPH5805 CPH5805 No. N 6 9 8 1 62001 CPH5805 CPH5805 MOSFET : N MOS SBD : DC / DC N MOS MCH3412 SBS006 SBS006 1 MOS 1)2)3)4V SBD 1) 2) Absolute Maximum Ratings / Ta=25 MOSFET unit V VDSS 30 DC VGSS ID ± 20 3 V A IDP PD Tch Tstg 12 0.9 A W 150 - 55 125 PW 10us, duty cycle 1% (600mm2 Ã- 0.8mm) 1unit SBD unit VRRM VRSM IO IFSM 30 30 0.5 10 QF A A - 55 ... | Original |
5 pages, |
SBS006 MCH3412 CPH5805 CPH5805 abstract |
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| Abstract: 2SK3850 MCH3411 MCH3411 MCH3412 MCH3431 MCH3431 MCH3435 MCH3435 MCH3443 MCH3443 MCH3444 MCH3444 MCH3459 MCH3459 MCH3460 MCH3460 MCH6406 MCH6406 MCH6602 MCH6602* MCH6608 MCH6608 , MCH3427 MCH3427 MCH3445 MCH3445 MCH3446 MCH3446 MCH3447 MCH3447 MCH3408 MCH3408 MCH3410 MCH3410 MCH3412 MCH3431 MCH3431 MCH3435 MCH3435 MCH3443 MCH3443 MCH3444 MCH3444 MCH3459 MCH3459 ... | Original |
24 pages, |
7A TSSOP8 electronic ballast for T5 lamp 5HP01SS MOSFET MCH33 MCH6603 IGBT 1500V 5A TN6R04 2SJ404 2sk3748 MCH5803 laptop inverter ccfl LCD tv smp circuit diagram MCH3435 EP51E EP51E abstract |
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| Abstract: Ordering number : ENN6981 ENN6981 CPH5805 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3412) and a Schottky Barrier Diode (SBS006 SBS006) 2171 contained in one package facilitating high-density mounting. [MOSFET] · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. [SBD] · Short reverse recovery time. · Low forward voltage. · 4 ... | Original |
5 pages, |
ta3173 mch3412 ENN6981 CPH5805 ENN6981 abstract |
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| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| SSM3K124TU Buy | MCH3412 Buy | Sanyo Semiconductor | Small-signal MOS FET - UFM - | Transistors |