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Part : MCH3412-EBM-TL-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 12,000 Best Price : $0.12 Price Each : $0.15
Part : MCH3412-TL-E Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 15,000 Best Price : $0.3640 Price Each : $0.3640
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MCH3412 Datasheet

Part Manufacturer Description PDF Type
mch3412 Sanyo Semiconductor Ultrahigh-Speed Switching Applications Original

MCH3412

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Ordering number : ENN6901 MCH3412 MCH3412 N-Channel Silicon MOSFET Ultrahigh-Speed , switching. 4V drive. unit : mm 2167 [MCH3412] 0.25 â'¢ 0.3 0.15 2 0.65 0.25 1 , : MCH3412/D MCH3412 Continued from preceding page. Parameter Symbol Static Drain-to-Source , MCH3412 50â"¦ S ID - VDS 4.0 2.0 1.6 VGS=2.5V 1.2 3.0 2.5 2.0 1.5 1.0 0.8 , °C 120 140 160 IT02945 MCH3412 yfs - ID VDS=10V 7 5 2 C 5° 1.0 ON Semiconductor
Original
MCH3412/D

13001 SD

Abstract: tr 13001 Ordering number : ENN6901 MCH3412 N-Channel Silicon MOSFET MCH3412 Ultrahigh-Speed , switching. 4V drive. unit : mm 2167 [MCH3412] 0.25 · 0.3 0.15 2 0.65 0.25 1 2.1 , , TOKYO, 110-8534 JAPAN 13001 TS IM TA-3099 No.6901-1/4 MCH3412 Continued from preceding page , =10µs D.C.1% G P.G MCH3412 50 S ID - VDS 4.0 1.6 VGS=2.5V 1.2 2.5 2.0 1.5 , 160 IT02945 No.6901-2/4 MCH3412 3 25° C 2 C 5° 1.0 = Ta 7 75
SANYO Electric
Original
13001 SD tr 13001 13001 data sw 13001

th 2167

Abstract: sw 13001 Ordering number : ENN6901 N-Channel Silicon MOSFET MCH3412 ISAÊlYOi Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resinstance. · Ultrahigh-speed switching. · , , 110-8534 JA P A N 13001 TS IM TA-3099 No.6901-1/4 MCH3412 Continued from preceding page. Parameter , i > 100 120 140 160 IT02952 MCH3412 Drain Current, Iq - A Ciss, Coss, Crss - pF Forward Current, Ip - A < o MCH3412 S p e c ific a tio n s of an y an d all S A N Y O p rod
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OCR Scan
th 2167

TA-3173

Abstract: cph58 No. N 6 9 8 1 CPH5805 No. N 6 9 8 1 62001 CPH5805 MOSFET : N MOS SBD : DC / DC N MOS MCH3412 SBS006 1 MOS 1)2)3)4V SBD 1) 2) Absolute Maximum Ratings / Ta=25 MOSFET unit V VDSS 30 DC VGSS ID ± 20 3 V A IDP PD Tch Tstg 12 0.9 A W 150 - 55 125 PW 10µs, duty cycle 1% (600mm2 × 0.8mm) 1unit SBD unit VRRM VRSM IO IFSM 30 30 0.5 10 QF A A
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Original
TA-3173 cph58 IT02940 IT02941 IT00633 IT00632 IT00634
Abstract: [ Ordering nufnb^rEN N 6981 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 SAWYD DC / DC Converter Applications Features Package Dimensions â'¢ Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3412) and a Schottky Barrier Diode (SBS006) 2171 contained in one package facilitating high-density [CPH5805] mounting. IMOSFET] 4 3 Low ON-resistance. RHR Ultrahiglvspeed switching. 4V drive. ISBDl h d bL 2 Short reverse recovery time. .0.4 -
OCR Scan

mch3412

Abstract: TA-317 Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3412) and a Schottky Barrier Diode (SBS006) 2171 contained in one package facilitating high-density mounting. [MOSFET] · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. [SBD] · Short reverse recovery time. · Low forward voltage. · 4
SANYO Electric
Original
TA-317 DIODE MARKING 3173 ta3173

on line ups circuit diagrams

Abstract: 2SK3850 MCH3445 MCH3446 MCH3447 MCH6405 MCH6408 MCH6413 MCH6617* MCH3408 MCH3410 MCH3411 MCH3412 , MCH3427 MCH3445 MCH3446 MCH3447 MCH3408 MCH3410 MCH3412 MCH3431 MCH3435 MCH3443 MCH3444 MCH3459
SANYO Electric
Original
MCH5803 K3492 on line ups circuit diagrams 2SK3850 242M SSFP package 3ln03 EP51E MCH3317 MCH5815 CPH3321 CPH5815 MCH3306