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| Part : MCH3412-EBM-TL-E | Supplier : ON Semiconductor | Manufacturer : Rochester Electronics | Stock : 12,000 | Best Price : $0.15 | Price Each : $0.15 |
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| Part : MCH3412EBMTLE | Supplier : ON Semiconductor | Manufacturer : ComSIT | Stock : 162,000 | Best Price : - | Price Each : - |
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| Part : MCH3412-TL-E | Supplier : ON Semiconductor | Manufacturer : Chip1Stop | Stock : 15,000 | Best Price : $0.2180 | Price Each : $0.2180 |
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MCH3412 Datasheet
| Part | Manufacturer | Description | Type | |
|---|---|---|---|---|
| mch3412 | Sanyo Semiconductor | Ultrahigh-Speed Switching Applications |
|
Original |
MCH3412
| Catalog Datasheet | MFG & Type | Document Tags | |
|---|---|---|---|
| Abstract: Ordering number : ENN6901 MCH3412 MCH3412 N-Channel Silicon MOSFET Ultrahigh-Speed , switching. 4V drive. unit : mm 2167 [MCH3412] 0.25 â'¢ 0.3 0.15 2 0.65 0.25 1 , : MCH3412/D MCH3412 Continued from preceding page. Parameter Symbol Static Drain-to-Source , MCH3412 50â"¦ S ID - VDS 4.0 2.0 1.6 VGS=2.5V 1.2 3.0 2.5 2.0 1.5 1.0 0.8 , °C 120 140 160 IT02945 MCH3412 yfs - ID VDS=10V 7 5 2 C 5° 1.0 |
ON Semiconductor Original |
|
MCH3412/D |
13001 SDAbstract: tr 13001 Ordering number : ENN6901 MCH3412 N-Channel Silicon MOSFET MCH3412 Ultrahigh-Speed , switching. 4V drive. unit : mm 2167 [MCH3412] 0.25 · 0.3 0.15 2 0.65 0.25 1 2.1 , , TOKYO, 110-8534 JAPAN 13001 TS IM TA-3099 No.6901-1/4 MCH3412 Continued from preceding page , =10µs D.C.1% G P.G MCH3412 50 S ID - VDS 4.0 1.6 VGS=2.5V 1.2 2.5 2.0 1.5 , 160 IT02945 No.6901-2/4 MCH3412 3 25° C 2 C 5° 1.0 = Ta 7 75 |
SANYO Electric Original |
|
13001 SD tr 13001 13001 data sw 13001 |
th 2167Abstract: sw 13001 Ordering number : ENN6901 N-Channel Silicon MOSFET MCH3412 ISAÊlYOi Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resinstance. · Ultrahigh-speed switching. · , , 110-8534 JA P A N 13001 TS IM TA-3099 No.6901-1/4 MCH3412 Continued from preceding page. Parameter , i > 100 120 140 160 IT02952 MCH3412 Drain Current, Iq - A Ciss, Coss, Crss - pF Forward Current, Ip - A < o MCH3412 S p e c ific a tio n s of an y an d all S A N Y O p rod |
- OCR Scan |
|
th 2167 |
TA-3173Abstract: cph58 No. N 6 9 8 1 CPH5805 No. N 6 9 8 1 62001 CPH5805 MOSFET : N MOS SBD : DC / DC N MOS MCH3412 SBS006 1 MOS 1)2)3)4V SBD 1) 2) Absolute Maximum Ratings / Ta=25 MOSFET unit V VDSS 30 DC VGSS ID ± 20 3 V A IDP PD Tch Tstg 12 0.9 A W 150 - 55 125 PW 10µs, duty cycle 1% (600mm2 × 0.8mm) 1unit SBD unit VRRM VRSM IO IFSM 30 30 0.5 10 QF A A |
- Original |
|
TA-3173 cph58 IT02940 IT02941 IT00633 IT00632 IT00634 |
| Abstract: [ Ordering nufnb^rEN N 6981 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 SAWYD DC / DC Converter Applications Features Package Dimensions â'¢ Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3412) and a Schottky Barrier Diode (SBS006) 2171 contained in one package facilitating high-density [CPH5805] mounting. IMOSFET] 4 3 Low ON-resistance. RHR Ultrahiglvspeed switching. 4V drive. ISBDl h d bL 2 Short reverse recovery time. .0.4 |
- OCR Scan |
|
|
mch3412Abstract: TA-317 Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3412) and a Schottky Barrier Diode (SBS006) 2171 contained in one package facilitating high-density mounting. [MOSFET] · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. [SBD] · Short reverse recovery time. · Low forward voltage. · 4 |
SANYO Electric Original |
|
TA-317 DIODE MARKING 3173 ta3173 |
on line ups circuit diagramsAbstract: 2SK3850 MCH3445 MCH3446 MCH3447 MCH6405 MCH6408 MCH6413 MCH6617* MCH3408 MCH3410 MCH3411 MCH3412 , MCH3427 MCH3445 MCH3446 MCH3447 MCH3408 MCH3410 MCH3412 MCH3431 MCH3435 MCH3443 MCH3444 MCH3459 |
SANYO Electric Original |
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MCH5803 K3492 on line ups circuit diagrams 2SK3850 242M SSFP package 3ln03 EP51E MCH3317 MCH5815 CPH3321 CPH5815 MCH3306 |