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Part : MB814400C70 Supplier : FUJITSU Manufacturer : Chip One Exchange Stock : 2,240 Best Price : - Price Each : -
Part : MB814400C70PJN Supplier : Fuji Electric Manufacturer : Chip One Exchange Stock : 2,240 Best Price : - Price Each : -
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MB814400C Datasheet

Part Manufacturer Description PDF Type
MB814400C-60PFTN Fujitsu DRAM Original
MB814400C-60PFTR Fujitsu DRAM Original
MB814400C-60PJN Fujitsu DRAM Original
MB814400C-70PFTN Fujitsu DRAM Original
MB814400C-70PFTR Fujitsu DRAM Original
MB814400C-70PJN Fujitsu DRAM Original

MB814400C

Catalog Datasheet MFG & Type PDF Document Tags

MB814400C

Abstract: 024-bits rated voltages to this high impedance circuit. To Top / Lineup / Index MB814400C-60/MB814400C-70 , Top / Lineup / Index MB814400C-60/MB814400C-70 Fig. 1 ­ MB814400C DYNAMIC RAM ­ BLOCK DIAGRAM , ground DQ2 WE RAS A9 To Top / Lineup / Index MB814400C-60/MB814400C-70 s RECOMMENDED , MB814400C-60/MB814400C-70 s DC CHARACTERISTICS (Recommended operating conditions unless otherwise noted , ; tRC = min. - - TTL level MB814400C-70 MB814400C-60 ICC3 MB814400C-70 MB814400C-60
Fujitsu
Original
024-bits DS05-10176-3E MB814400C-60/-70 F9607
Abstract: FEATURES Parameter MB814400C-60 MB814400C-7Q RAS Access Time 60ns max. 70ns max. CAS , ir c u it . _ - PRELIMINARYEdition 2.1 MB814400C-60 MB814400C-70 Fig. 1 - , b Q Q 1 & 4 5 M 3Q5 C DQ -P R E L IM I N A R Y Edition 2.1 MB814400C-60 MB814400C-70 , 16 ^ v cc PRE LIM IN AR YEdition 2.1 MB814400C-60 MB814400C-70 RECOMMENDED OPERATING , MB814400C-60 MB814400C-70 DC CHARACTERISTICS (Recommended operating conditions unless otherwise noted -
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14400C-60/-70 LCC-26P-M04 C26054S-1C 26-LEAD FPT-26P-M01 F26001S-3C
Abstract: -pin plastic (300mil) TSOP-II with reverse bend leads, order as MB814400C-xxPFTR 2 MB814400C-60/MB814400C-70 , Param eter MB814400C-60 MB814400C-70 RAS Access Time 60 ns max. 70 ns max. CAS Access , ig h im p e d a n c e c irc u it. MB814400C-60/MB814400C-70 â  ABSOLUTE MAXIMUM RATINGS (See , Capacitance, D Q ito DCk 3 MB814400C-60/MB814400C-70 â  PIN ASSIGNMENTS AND DESCRIPTIONS 26-Pin SOJ , 9 ^ Ao 10 X I Ai 11 ^ A2 12 ^2 A3 13 ^ Vcc MB814400C-60/MB814400C-70 â  RECOMMENDED -
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MB814400C-60/MB814400C-70

814400C

Abstract: 714 - PRELIMINARYEdition 2.0 MB814400C-60 MB814400C-70 Fig. 1 - MB814400C DYNAMIC RAM - , 4 ti7 S b D D llM T M bSD -PR ELIM IN A R YEdition 2.0 MB814400C-60 MB814400C-70 PIN , PRELIMINARYEdition 2.0 MB814400C-60 MB814400C-70 RECOMMENDED OPERATING CONDITIONS Notes Parameter Typ , PRELIMINARYEdition 2.0 MB814400C-60 MB814400C-70 DC CHARACTERISTICS (Recommended operating conditions unless ,
-
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814400C 14400C-60 D11515 FPT-26P-M02 F26002S-3C 37417S

MB814400C60

Abstract: 814400s . Marking side PRODUCT LINE & FEATURES MB814400C-60 MB814400C-70 RAS Access Time 60ns max , ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ­ PRELIMINARY ­ Edition 2.1 MB814400C-60 MB814400C-70 Fig. 1 ­ MB814400C , ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ­ PRELIMINARY ­ Edition 2.1 MB814400C-60 MB814400C-70 PIN ASSIGNMENTS , Edition 2.1 MB814400C-60 MB814400C-70 RECOMMENDED OPERATING CONDITIONS Notes Parameter Typ , PRELIMINARY ­ Edition 2.1 MB814400C-60 MB814400C-70 DC CHARACTERISTICS (Recommended operating
Fujitsu
Original
MB814400C60 814400s
Abstract: PRELIMINARY Edition 2.1 MB814400C-60 MB814400C-70 Fig. 1 - M B814400C D Y N A M IC RAM - BLOCK , H A , X l v cc v i 3 - PRELIMINARY Edition 2.1 MB814400C-60 MB814400C-70 R E C , MB814400C-60 j gj MB814400C-70 ^ RAS =VIL, CAS cycling; tp c = min CC4 - - 41 mA 37 Refresh current #2 (Average power sup ply current) MB814400C-G0 'cc5 MB814400C-70 RAS cycling , 2.1 MB814400C-60 MB814400C-70 F '9 - 2 - t r a g v s - 1 l RCD RAC F i g . 3 - t RAC v s . t -
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DS05-10176-2E

MB814400C-60

Abstract: (300mil) TSOP-II with reverse bend leads, order as MB814400C-xxPFTR 2 MB814400C-60/MB814400C-70 , . 5 7 7 Unit pF pF pF 3 MB814400C-60/MB814400C-70 PIN ASSIGNMENTS AND DESCRIPTIONS 26 , ÜE CÂS Vss 4 MB814400C-60/MB814400C-70 RECOMMENDED OPERATING CONDITIONS Parameter Supply , of read, write, and/or ready-modify-write cycles are permitted. 5 MB814400C-60/MB814400C-70 , 10 61 loci MB814400C-70 TT level |C C 2 CMOS level MB814400C-60 Icc3 MB814400C-70 MB814400C-60 |C
-
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F9703

128M-BIT

Abstract: 128-MBIT DRAM Modules (1) DRAM Modules - Normal Voltage Versions (CMOS) Vcc= +5V+10%, Ta=0°C to +70~C Organization (Wxb) Part Number Mounted Device X number MB814400C x8 MB814405C x8 Capacity Ace««# Tfcna max. (ns) 60(15] 70(20] Power Consumption max. (mW) Package Operating 2684 2376 2904 2424 1760 1650 2772 2464 2992 2512 1782 1672 1782 1672 4620 3960 4620 3960 5962 5148 , -bit MB8117400A x8 MB814100C x4 144M-bit MB8117400A x8 128M-bit MB814400C x16 MB814405C x16
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128M-BIT 128-MBIT 256-MBIT MB85341C-60 MB85341C-70 MB85343C-60 MB85343C-70 MB8501DQ32AA-6 MB8118160A

m7203

Abstract: mb85341c60 ) module consisting of eight MB814400C devices. The MB85341C is optimized for those applications requiring , the MB85341C are the same as the MB814400C which features fast page mode operation. For ease of , Organization: 1,048,576 words × 32 bits Memory: MB814400C, 8 pcs Decoupling Capacitor: 16 pcs 5.0 V , Refresh cycle. *17. Assumes test mode function. *Source: See MB814400C Data Sheet for details on the
Fujitsu
Original
m7203 mb85341c60 dram memory module 1993 DS05-11216-1E MB85341C-60/-70 MB85341C-
Abstract: MB814400C devices. The MB85342C is optimized for those applications requiring high speed, high performance , the MB814400C which features fast page mode operation. For ease of memory expansion, the MB85342C is , 32 bits Memory: MB814400C, 16 pcs Decoupling Capacitor: 16 pcs 5.0 V+10% Supply Voltage 1,024 Refresh , . *6. *7. *8. *9. *10. *11. *12. *13. *14. *15. *16. *17. *Source: See MB814400C Data Sheet -
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MB85342C-60 MB85342C-70 MB85342C-

M72040

Abstract: MB853 ) module consisting of sixteen MB814400C devices. The MB85342C is optimized for those applications , characteristics of the MB85342C are the same as the MB814400C which features fast page mode operation. For ease , · Organization: 2,097,152 words × 32 bits Memory: MB814400C, 16 pcs Decoupling Capacitor: 16 , . Assumes CAS-before-RAS Self Refresh cycle. *17. Assumes test mode function. *Source: See MB814400C Data
Fujitsu
Original
M72040 MB853 Chip03 DS05-11213-1E MB85342C-60/-70
Abstract: Dynamic Random Access Memory (DRAM) module consisting of eight MB814400C devices. The MB85341C is , operation and electrical characteristics of the MB85341C are the same as the MB814400C which features fast , . 88 mW max. 44 mW max. Organization: 1,048,576 words x 32 bits Memory: MB814400C, 8 pcs Decoupling , MB814400C Data Sheet for details on the electricals. 8 MB85341C-60/-70 PACKAGE DIMENSIONS (Suffix -
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MB85341

3654P

Abstract: DRAM 4464 -70L 70[20]*1 125 550 MB814400C-60 60[15]*1 110 336 MB814400C-70 70[20]*1 125 297 MB814400C-60L 60[15]*1 110 336 MB814400C-70L 70[20]*1 125 297 MB814400D , ×8 Fast page mode MB85342C 60 ns 70 ns. MB814400C×16 Hyper page mode 72Pin SIMM 4M , Capacity Package MB85344C 60 ns 70 ns. MB814405C×16 Type Mounted Devices MB814400C×8 , 60 ns. Self-refresh MB814405D Fast page mode L MB814400C Hyper page mode from
Fujitsu
Original
MB814260 3654P DRAM 4464 jeida dram 88 pin 4464 dram 1024M-bit MB814400A MB814100D MB814100A MB814260SL MB98B7515-70

MB814260

Abstract: 4MX1 ) MB814400C DATA SHEET EDITION 2.1 407k (1Mx4 EDO Mode, 5V) MB814405C DATA SHEET EDITION 2.2 388k
Fujitsu
Original
4MX1 407K MB81V4405C MB814265 MB81V4260S MB81V4265S

203165

Abstract: DRAM 1M May 1996 Revision 1.0 DATA SHEET DM2M1N360A-(60/70)J(G/S)-IS 8MByte (2M x 36) CMOS DRAM Module - ECC General Description The DM2M1N360A-(60/70)J(G/S)-IS is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, JEDEC ECC configuration, leadless, single-in-line memory module (SIMM) package. The module utilizes eighteen, Fujitsu MB814400C-(60/70)PJ CMOS 1Mx4 dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a
Fujitsu
Original
203165 DRAM 1M MP-DRAMM-DS-20316-5/96
Abstract: June 1996 Revision 1.0 DATA SHEET FSA2UN3641-(60/70)J(G/S)-S 8MByte (2M x 36) CMOS DRAM Module - ECC General Description The FSA2UN3641-(60/70)J(G/S)-S is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, JEDEC ECC configuration, leadless, single-in-line memory module (SIMM) package. The module utilizes eighteen, Fujitsu MB814400C-(60/70)PJ CMOS 1Mx4 dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a Fujitsu
Original
MP-DRAMM-DS-20316-6/96
Abstract: June 1996 Revision 1.0 " D A T A S H E E T - FSA2UN3641-(60/70)J(G/S)-S 8MByte (2M x 36) CMOS DRAM Module - ECC General Description The FSA2UN3641-(60/70)J(G/S)-S is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, JEDEC ECC configuration, leadless, single-in-line memory module (SIMM) package. The module utilizes eighteen, Fujitsu MB814400C-(60/70)PJ CMOS 1Mx4 dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each -
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mb87020

Abstract: tag 9335 MB814400C MB814260 MB81V4260S Cycle Time Min (ns) 1 Megabit 60 110 70 125 60 70 110
Fujitsu
Original
mb87020 tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM SD-SG-20342-9/96

29F400TA

Abstract: FLC31SVC6S MB814400C MB814260 MB81V4260S Cycle Time Min (ns) 1 Megabit 60 110 70 125 60 70 110
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FLC31SVC6S 29F400TA 15E03L MB90P263 81V4405C 29lv800ta MBM29F002T/B 29F002T/B-X MBM29LV002T/B 29LV002T/B-X 29LV004B 29LV004T