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MARKING SMD 14 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: -3-11 Marking QN0609 QN0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain , characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 , , V DS=0 V V GS=10 V, I D=39 A 55 2.1 3.0 0.01 4 1 uA V 1.4 62 40 K/W - 1 1 8.0 100 100 9 nA , Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2 ... Infineon Technologies
Original
datasheet

9 pages,
178.37 Kb

g51 smd IPD50N06S3-09 TEXT
datasheet frame
Abstract: packages where marking of the entire SMD PIN number is not feasible due to space limitations, the , Terminals GDIP1-T14 GDIP1-T14 or CDIP2-T14 CDIP2-T14 CQCC1-N20 CQCC1-N20 Package style 14 20 Dual-in-line Square leadless , ) . Clamp diode current (IIC , ±25 mA ±50 mA -65°C to +150°C 500 mW 2/ +260°C See MIL-STD-1835 MIL-STD-1835 +175°C 1.4 Recommended , . 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535 MIL-PRF-38535, appendix A. The part shall be marked ... Texas Instruments
Original
datasheet

12 pages,
95.96 Kb

TEXT
datasheet frame
Abstract: VS-HFA16TA60CSPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A , EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing , center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced , continuous current, the VS-HFA16TA60CS VS-HFA16TA60CS is especially well suited for use as the companion diode for IGBTs and , significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages ... Vishay Semiconductors
Original
datasheet

8 pages,
151.52 Kb

TEXT
datasheet frame
Abstract: (on) · 100% Avalanche tested PG-TO252-3-11 PG-TO252-3-11 Type IPD90N06S3L-07 IPD90N06S3L-07 Package PG-TO252-3-11 PG-TO252-3-11 Marking , characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 , =16 V, V DS=0 V V GS=5 V, I D=30 A V GS=10 V, I D=45 A 55 1.2 1.7 0.01 2.2 1 uA V 1.4 62 40 K/W - , Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode , A V ns nC Current is limited by bondwire; with an R thJC = 1.4 K/W the chip is able to carry ... Infineon Technologies
Original
datasheet

9 pages,
179.29 Kb

PN06L07 PN06L Marking g51 IPD90N06S3L-07 TEXT
datasheet frame
Abstract: Continuous Source Current (Body Diode) -N-Ch — — 0.78 A P-Ch — — -0.78 Ism Pulsed Source Current (Body Diode) ® N-Ch — — 14 P-Ch _ — -9.6 VSD Diode Forward Voltage N-Ch — _ 1.0 V T.i = , Current CD 14 -9.6 PD Ya = 25°C Power Dissipation (PCB Mount)* 6 25 mW Linear Derating Factor (PCB Mount)* 5.0 mW/°C Vgs Gate-to-Source Voltage ±8.0 V dv/dt Peak Diode Recovery dv/dt 6.2 | -5.S , on 1 inch square copper board, for comparison to the other SMD devices. 211 IRF7509 IRF7509_ Electrical ... OCR Scan
datasheet

8 pages,
1411.54 Kb

smd MARKING GG ld085 IRF7509 P-CHANNEL MOSFET SMD MARKING CODE YA MOSFET SMD N-Channel 30V 100A MOSFET SMD N-Channel 30V 0.85A 1270C TEXT
datasheet frame
Abstract: The K2010 K2010 series consist of an infrared emitting diode, optically coupled to a phototransistor , wide-lead spacing and SMD option. 1. Anode 2. Cathode 3. NC 4. Emitter 5. Collector 6. Base ï , 6.50 1.20 2.54 5.08 0.50 TOLERANCE 2.54 ±0.2mm 5.08  Device Marking , . Typ. Max. Unit Forward voltage Input VF IF=20mA - 1.2 1.4 V Peak , ° C 25° C 0° C 20 -25 ° C 10 5 2 1 1.0 1.2 1.4 1.6 1 .8 2.0 ... Cosmo Electronics
Original
datasheet

11 pages,
359.84 Kb

cosmo 2010 4N35 K2010 TEXT
datasheet frame
Abstract: coupled to a gallium arsenide infrared-emitting diode in a 4-pin DIP package and available in wide-lead 4 1 The KP4010 KP4010 series consist of a photodarlington 2 3 spacing and SMD option , 2.54 0.50 TOLERANCE 2.54 ±0.2mm Device Marking cosmo 4010 YWW Cosmo Electronics , Conditions Min. Typ. Max. Unit IF=20mA - 1.2 1.4 V IFM=0.5A - - 3.5 , No. 69P20001 69P20001.1 200 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Forward Voltage VF (V) -4- ... Cosmo Electronics
Original
datasheet

11 pages,
223.91 Kb

KP4010 TEXT
datasheet frame
Abstract: Diode TM Features (K) Ultrafast Recovery Ultrasoft Recovery Very Low IRRM , EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced , Description International Rectifier's HFA08TB60S HFA08TB60S is a state of the art ultra fast recovery diode , suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time , offer designers a rectifier with lower noise and significantly lower switching losses in both the diode ... International Rectifier
Original
datasheet

7 pages,
267.96 Kb

smd transistor REC marking TRANSISTOR SMD MARKING CODE 42 HFA08TB60S TRANSISTOR SMD 2X K IRFP250 TRANSISTOR SMD 2x t TRANSISTOR SMD MARKING CODE DM SMD TRANSISTOR MARKING 9bb PD-20607 TRANSISTOR SMD MARKING CODE 2x 20607 transistor 20607 smd TRANSISTOR code marking 2F TEXT
datasheet frame
Abstract: 12 14 3312 - 2 Chip Diode Series - Potentiometer Switchingmm SMD Trimming 0603/1005 Packaging , 12 14 Switching Chip Diode Series - 0603/1005 Rating & Characteristic Curves: CDxxxx-S0180R , ■ Digital cameras ■ MP3 players Switching Chip Diode Series - 0603/1005 General Information , CD 0603 - S 01 80 R Common Code Chip Diode Package • 0603 • 1005 Model S = High-Speed , (CDxxxx-S0180R) Switching Chip Diode Series - 0603/1005 Product Dimensions Recommended Pad Layout A A ... Bourns
Original
datasheet

6 pages,
285.26 Kb

TEXT
datasheet frame
Abstract: - 4 Pin SMD Option 7 Document Number: 83715 Rev. 1.4, 11-Jan-08 For technical questions, please , ) min. 17966 0.512 (13.00) 0.060 (1.52) Fig. 14 - 4 Pin SMD Option 8 Document Number: 83715 Rev , DESCRIPTION The 6N1135 6N1135 and 6N1136 6N1136 are 110 °C rated optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a high-speed , /PACKAGE UL DIP-8 DIP-8, 400 mil, option 6 SMD-8, option 9 7 6N1135 6N1135 6N1135-X006 6N1135-X006 6N1135-X009T 6N1135-X009T CTR (%) 19 ... Vishay Semiconductors
Original
datasheet

16 pages,
275.86 Kb

6 pin TRANSISTOR SMD CODE 21 6N1135 6N1136 TEXT
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