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CYCLONE-3-MERCURYCODE-REF Texas Instruments Cyclone III-based MercuryCode visit Texas Instruments
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MARKING CODE A6s

Catalog Datasheet MFG & Type PDF Document Tags

BAS16

Abstract: bas16 a6 triple single Marking A6s A6 6 A6 white B 6A A6s A6s A6s * Preliminary Data 1Pb , 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking , ) 2005, June Date code BAR63-02V Type code Cathode marking Laser marking Standard Packing Reel , 0.35 Marking Layout (Example) 2005, June Date code BAR63-02W Type code Cathode marking Laser
Infineon Technologies
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BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W bas16 a6 BAS1602W BAS16-07L4

MARKING CODE A6s

Abstract: BAS16 single Marking A6s A6 6 A6 B 6A A6s A6s A6s * Preliminary Data 1Pb-containing package , 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking , ) 2005, June Date code BAR63-02V Type code Cathode marking Laser marking Standard Packing Reel , 0.35 Marking Layout (Example) 2005, June Date code BAR63-02W Type code Cathode marking Laser
Infineon Technologies
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BAS16S BAS16U MARKING CODE A6s A6S marking code DIODE MARKING CODE LAYOUT G SOT23 bas16 infineon top marking code marking code a6 SCD80 BAS16/ BAS16-02L/

BAS1602W

Abstract: BAS16 parallel pair, leadless parallel triple parallel triple single Marking A6s A6 6 A6 B 6A A6s , 0.5 0.95 Marking Layout Manufacturer Date code (Year/Month) Pin 1 2003, July Type , 0.35 Marking Layout Date code 2003, July Type code BAR63-02V Laser marking Cathode marking Example Packing Code E6327: Reel ø180 mm = 3.000 Pieces/Reel Code E6433: Reel ø330 mm = , SC79 Data Code marking for discrete packages with one digit (SCD80, SC79) CES-Code Month 2 0 03
Infineon Technologies
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SC79 SOt323 marking code 6X

BAS16

Abstract: parallel triple single Marking A6s A6 6 A6 white B 6A A6s A6s A6s * Preliminary Data 1Pb , (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel ø180 mm = , 1.35 Foot Print 0.35 Marking Layout (Example) 2005, June Date code BAR63-02V Type code , Date code BAR63-02W Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = , Cathode marking 13 0.7 2009-09-28 BAS16. Date Code marking for discrete packages with one
Infineon Technologies
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transistor marking NA 85

Abstract: BAS16 , leadless parallel triple parallel triple single Marking A6s A6 6 A6 B 6A A6s A6s A6s , Manufacturer Date code (Year/Month) Type code Laser marking 2005, June BCW66H Pin 1 marking , Print 0.35 Marking Layout Date code 2003, July Type code BAR63-02V Laser marking , 1.45 0.35 Foot Print 0.35 Marking Layout Date code 2003, July Type code BAR63 , 2005-11-08 BAS16. Data Code marking for discrete packages with one digit (SCD80, SC79) CES-Code
Infineon Technologies
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transistor marking NA 85 a6s marking DIODE MARKING CODE G SOT23 G t marking SOT323 marking 20 sot363 marking 38

diode A6s

Abstract: marking code 16W SIEM EN S Silicon Switching Diode · For high speed switching applications BAS 16W Type BAS 16W Marking Ordering Code A6s Q62702-A1050 Pin Configuration o II C O Package SOT-323 1=A Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 fis Total Power dissipation TS < 1 1 9 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1> ñ thJA R thJS Symbol Vr ' 'rm If 'f s Values 75 85 250 4.5 Unit V
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OCR Scan
diode A6s marking code 16W a6s diode marking 16w

A6s sot23

Abstract: A6S marking code Silicon Switching Diode q BAS 16 For high-speed switching Type Marking Ordering Code (tape and reel) BAS 16 A6s Pin Configuration Q62702-F739 Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 75 V Peak reverse voltage VRM 85 Forward current IF 250 mA IFS 4.5 A Total power dissipation, TS = 54 °C Ptot 370 mW Junction temperature Tj 150 °C Storage temperature
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A6s sot23 marking A6s sot-23 diode A6s sot 23 sot-23 MARKING A6S DIODE JS 4 marking a6s

A6s 23

Abstract: Silicon Switching Diode q BAS 16 For high-speed switching Type Marking Ordering Code (tape and reel) BAS 16 A6s Pin Configuration Q62702-F739 Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 75 V Peak reverse voltage VRM 85 Forward current IF 250 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS = 54 ˚C Ptot 370 mW Junction temperature Tj
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A6s 23

BAS 16 MARKING

Abstract: marking A6s SIEMENS Silicon Switching Diode · For high-speed switching BAS 16 Type BAS 16 Marking A6s Ordering Code (tape and reel) Q62702-F739 Pin Configuration 1 * 0 -o 1 CHA07002 Package1 ) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 us Total power dissipation, 7s = 54 'C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Ä th J A Æ
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OCR Scan
BAS 16 MARKING lg-330 lg330

Q62702-A1050

Abstract: a6s marking BAS 16W Silicon Switching Diode · For high speed switching applications Type Marking Ordering Code Pin Configuration BAS 16W A6s 1=A Q62702-A1050 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current IF 250 Surge forward current, t = 1 µs IFS 4.5 Total Power dissipation Ptot TS 119 °C Values Unit V mA mW 250 Junction temperature Tj Storage
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A1050

transistor a1241

Abstract: A1241 BAS 16S Silicon Switching Diode Array 4 · For high-speed switching applications 5 · Internal (galvanic) isolated Diodes 6 in one package Tape loading orientation 2 1 Type Marking Ordering Code Pin Configuration BAS 16S A6s 3 VPS05604 Package Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current IF 200 mA
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transistor a1241 A1241 5-30K transistor a1241 datasheet EHN00016 EHB00023 EHB00025 EHB00022
Abstract: SIEMENS BAS 16S Silicon Switching Diode Array â'¢ For high-speed switching applications â'¢ Internal (galvanic) isolated Diodes in one package Tape loading orientation View 6 5 4 M arking on S O T - 3 6 3 p ackag e ( fo r e x a m p le W 1 s ) c o rre sp o n d s to pin 1 o f d evice fw is jl 1 2 3 Position in ta p e : pin 1 o pp o site o f fe ed hole side D irection o f U nreelin g A3 EHA07291 Type Marking Ordering Code Pin Configuration BAS 16S A6s -
OCR Scan

A6S marking code

Abstract: SIEMENS Silicon Sw itching Diode Array · For high-speed switching applications · Internal (galvanic) isolated Diodes in one package Tape loading orientation BAS 16S 0 Top View 6 54 n n n M arking on S O T -363 package ( f o r e xam ple W Is) co rre spo n ds to pin 1 o f device fwïïl U U LI 1 2 3 Direction o f U nreeling ^ Position in ia p e : pin 1 opposite o f feed hole siae EHA07193 A3 EHA0729I Type BAS 16S Marking Ordering Code Pin Configuration A6s Q62702-A1241 1=A1 2
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OCR Scan

MBR10200

Abstract: MBR10XX , half wave, 60 Hz. resistive or inductive load. For capacitive load, derate current by 20% Marking Diagram MBR10XX = Specific Device Code G = Gicen Compound y = Year WW = Work Week eristics Type , Sicrage Temper3iure Range T«io â 6S to +175 uc Notes: 1. 2.0us Pulse Wdth, f=1.0 KHz 2. Pulso
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OCR Scan
MBR10200 GEM1 MBR 1045 marking code .gj MBR1035-MBR10200 MIL-STD-750
Abstract: SIEMENS BAS 16W Silicon Switching Diode â'¢ For high speed switching, applications Type Marking Ordering Code (tape and reel) BAS 16W A6s Q62702-A1050 Pin Configuration 1 2 3 A C Package SOT-323 Maximum Ratings Parameter Symbol Reverse voltage Vr B A S 16W 75 Unit V 85 V Peak reverse voltage VhM Forward current If 250 mA Surge forward current, t = 1jxs /f s 4.5 A Total Power dissipation Ts -
OCR Scan
G12DS71
Abstract: S IE M E N S Silicon Switching Diode BAS 16 â'¢ For high-speed switching Type Marking Ordering Code (tape and reel) BAS 16 A6s Q62702-F739 Pin Configuration Package1) SOT-23 o- -o 1 EHM70D2 Maximum Ratings Parameter Symbol Values Unit Reverse voltage Vr 75 V Peak reverse voltage V rm 85 Forward current If 250 mA Surge forward current, t= 1 us / fs 4.5 A Total power dissipation, Ptot 370 -
OCR Scan

transistor Bc 540

Abstract: 68W SOT Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 , Book 1 2000-09-01 Marking Code Sorted by Type Type Package Marking Type , 66 67 67 BAT 66-05 83 83s 84 84s 85 85s 86 Data Book 2 2000-09-01 Marking Code , Data Book 3 2000-09-01 Marking Code Sorted by Type Type Package Marking Type , Data Book 4 2000-09-01 Marking Code Sorted by Type Type Package Marking Type
Infineon Technologies
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transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 SCD-80 SC-79 70-04S SC-74 SCT-598 TSSOP10-1

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 , Marking Sorted by Code Marking Type Package Marking Type Package 3Ds 3E 3Es 3F 3F , -23 SOT-23 SOT-323 SOT-23 SOT-323 SOT-23 2 2000-09-01 Marking Sorted by Code Marking , Marking Sorted by Code Marking Type Package Marking Type Package AA AA Aas AB AC , -223 Data Book 4 2000-09-01 Marking Sorted by Code Marking Type Package Marking
Infineon Technologies
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marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 3904S 846AT 846BW 846BT 847AT 847BW

Omron H3BA

Abstract: omron G2E-184P 12V -354J 428 - 429 A6T/A6S 671 - 673 G3VM-355J 430 - 431 A6D/A6DR 674 - 676 G3VM
OMRON
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Omron H3BA omron G2E-184P 12V tele vde 0435 omron h3ba timer smd transistor A6t 5 pin relay 12vdc 4088 G3VM-61A1/D G3VM-351A/D G3VM-353A/D G3VM-401A/D Z4D-B01 S-164

Omron H3BA

Abstract: smd transistor A6t 716 A6H 717 - 718 A6T/A6S 719 - 721 A6D/A6DR 722 - 724 A6E/A6ER 725 - 727
OMRON
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omron relay 12VDC, IEC255 smd a6t double diode smd transistor A6a h3ba cross reference capillary rotary compressor RELAY OMRON LZN 203 OCB003
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