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Part Manufacturer Description Datasheet BUY
SN74LS122J Texas Instruments LS SERIES, MONOSTABLE MULTIVIBRATOR, CDIP16 visit Texas Instruments
SN74LS122FN Texas Instruments LS SERIES, MONOSTABLE MULTIVIBRATOR, PQCC20 visit Texas Instruments
SN74LS422N Texas Instruments LS SERIES, MONOSTABLE MULTIVIBRATOR, PDIP14 visit Texas Instruments
SN54LS148W-00 Texas Instruments LS SERIES, 8-BIT ENCODER, CDFP16 visit Texas Instruments
SN74LS294FN Texas Instruments LS SERIES, PRESCALER, PQCC20 visit Texas Instruments
SN74LS422DR Texas Instruments LS SERIES, MONOSTABLE MULTIVIBRATOR, PDSO14 visit Texas Instruments

MARKING 842 SCHOTTKY

Catalog Datasheet MFG & Type PDF Document Tags

SB2100

Abstract: SB220 LESHAN RADIO COMPANY, LTD. SB220 thru SB2100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 100V , Note: DO-15 molded plastic case The marking band indicates the cathode 3/3 LESHAN RADIO , -41&DO-15 ) Item L Dimension L 200±2 W H 84±2 21±2 Symbol Dimension L 200±2 W 84±2 H H Symbol 29±2 Symbol Dimension Box's Size W ( DO-201AD ) H Item
Leshan Radio Company
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SB230 SB240 SB250 SB260 MIL-STD-750 SB280

A-405

Abstract: SB1100 LESHAN RADIO COMPANY, LTD. SB120 thru SB1100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 100V Forward Current 1.0A Flammability Classification 94V-0 Low power loss,high efficiency For use in low , case The marking band indicates the cathode 3/3 LESHAN RADIO COMPANY, LTD. Packing Of , L Dimension L 200±2 W H 84±2 21±2 Symbol Dimension L 200±2 W 84±2
Leshan Radio Company
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A-405 DO-41

MARKING 842 SCHOTTKY

Abstract: A-405 LESHAN RADIO COMPANY, LTD. SB120 thru SB1100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 100V , -41 molded plastic case The marking band indicates the cathode 3/3 LESHAN RADIO COMPANY, LTD , ( DO-41&DO-15 ) Item H L Symbol Dimension L 200±2 W H 84±2 21±2 Symbol Dimension Box's Size W ( DO-201AD ) H Item Box's Size 200±2 W 84±2 H 29±2
Leshan Radio Company
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MARKING 842 SCHOTTKY

MARKING 842 SCHOTTKY

Abstract: SB5100 LESHAN RADIO COMPANY, LTD. SB520 thru SB5100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory Reverse Voltage 20 to 100V Forward Current , Note: DO-201AD molded plastic case The marking band indicates the cathode 3/3 LESHAN RADIO , -41&DO-15 ) Item L Dimension L 200±2 W H 84±2 21±2 Symbol Dimension L 200±2 W 84±2 H H Symbol 29±2 Symbol Dimension Box's Size W ( DO-201AD ) H Item
Leshan Radio Company
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SB530 SB540 SB550 SB560 SB580

sb340 diode

Abstract: SB360 diode LESHAN RADIO COMPANY, LTD. SB320 thru SB3100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 100V Forward Current 3.0A Flammability Classification 94V-0 Low power loss,high efficiency For use in low , 25.4 5.0 1.2 Max. 9.5 5.6 1.3 Note: DO-201AD molded plastic case The marking band , L 200±2 W H 84±2 21±2 Symbol Dimension L 200±2 W 84±2 H H
Leshan Radio Company
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SB330 SB340 SB350 SB360 sb340 diode SB360 diode SB390
Abstract: /W Package Marking and Ordering Information Device Marking FDQ7698S Device Reel Size 13" FDQ7698S , Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 50 50 80 38 4814 1324 842 300 321 98 , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% See "SyncFET Schottky diode characteristics , SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in , Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the Fairchild Semiconductor
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SO-14

FSC60ML

Abstract: FUJITSU GaAs FET FSC60ML General Purpose GaAs FET FEATURES · Low Noise Figure: NF=0.8dB (Typ.) @ f=4GHz · High Associated Gain: Gas=11dB (Typ.) @ f=4GHz · Small Size: 6 pin Plastic Package for SMT Applications. DESCRIPTION The FSC60ML is a low noise GaAs FET with an N-channel Schottky gate that is well suited for GPS , : The package marking "FGDT" shows the part number, year and month of manufacturer. Where: "FG" , 155.7 153.1 140.8 129.4 118.9 109.3 100.4 92.0 84.2 76.6 0.055 0.010 0.014 0.019 0.024 0.024 0.033 0.038
Fujitsu
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FUJITSU GaAs FET Fujitsu GaAs FET Amplifier nf 817 gaas fet marking a gaas fet marking D FCSI0598M200

E3P303

Abstract: 842 so8 soic-8 marking http://onsemi.com 842 NTMSD3P303R2 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IF, INSTANTANEOUS , NTMSD3P303R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package , (on), · Independent Pin-Outs for MOSFET and Schottky Die · Less Component Placement for Board Space , http://onsemi.com Schottky Diode with Low VF Allowing for Flexibility in Application Use MOSFET -3.05 AMPERES -30 VOLTS 0.085 W @ VGS = -10 V SCHOTTKY DIODE 3.0 AMPERES 30 VOLTS 420 mV @ IF =
ON Semiconductor
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E3P303 842 so8 soic-8 marking 0E-02 0E-01 0E-05 0E-04 0E-03

TS1937

Abstract: TS1937CX5 maintain high efficiency, the average current rating of the Schottky diode should be large than the peak inductor current, IPK. Schottky diode with a low forward drop and fast switching speeds are ideal for increase efficiency in portable application. Choose a reverse breakdown of the Schottky diode large than the output voltage. A Schottky diode rated at 100mA to 200mA is sufficient for most TS1937 , ) 20 20 20 20 Resistor () 4.75 4.75 4.75 4.75 Efficiency (%) 83.5 84.2 84.3 84.6 LED Current Control
Taiwan Semiconductor
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TS1937CX5

TS1937

Abstract: 22mH inductor , the average current rating of the Schottky diode should be large than the peak inductor current, IPK. Schottky diode with a low forward drop and fast switching speeds are ideal for increase efficiency in portable application. Choose a reverse breakdown of the Schottky diode large than the output voltage. A Schottky diode rated at 100mA to 200mA is sufficient for most TS1937 applications. Capacitor Selection , 12pcs 20 20 20 20 4.75 4.75 4.75 4.75 83.5 84.2 84.3 84.6 LED Dimming Control
Taiwan Semiconductor
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22mH inductor SOT-25 RF detect ELECTRONIC dimming BALLAST WLED driver

22 diode

Abstract: FDQ7698S , Junction-to-Ambient (Note 1a & 1b) 52 68 (Note 1c & 1d) 94 °C/W 118 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDQ7698S FDQ7698S 13 , Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 4814 1324 842 300 321 98 1.5 1.2 pF Q2 Q1 Q2 Q1 Q2 , : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% See "SyncFET Schottky , (W) FDQ7698S Typical Characteristics : Q2 SyncFET Schottky Body Diode Characteristics
Fairchild Semiconductor
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22 diode FDS6676

40847

Abstract: NE4210S01 µm ORDERING INFORMATION (PLAN) Part Number NE4210S01-T1 Marking Supplying Form Tape & , 10.34 8.42 6.36 5.48 4.38 3.80 3.25 3.05 2.80 2.54 2.31 2.12 1.99 1.83 1.66 1.52 1.45 , ­41.7 ­44.3 ­47.2 ­50.8 ­55.4 ­61.1 ­67.1 ­73.3 ­78.7 ­84.2 ­89.3 ­94.9 ­101.4 ­108.7 , ) Because this device is a GaAs MES FET with a Schottky barrier gate structure, it is necessary that
NEC
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NE4210S01 NE4210S01-T1B 40847 ku 1490

NE4210S01

Abstract: nec 4164 160 µm ORDERING INFORMATION (PLAN) Part Number NE4210S01-T1 NE4210S01-T1B Marking L Supplying Form , ­14.03 ­14.37 ­14.54 ­14.78 ­15.19 16.25 19.06 12.08 10.34 8.42 6.36 5.48 4.38 3.80 3.25 3.05 2.80 2.54 , ­21.3 ­25.4 ­29.2 ­33.0 ­36.0 ­38.8 ­41.7 ­44.3 ­47.2 ­50.8 ­55.4 ­61.1 ­67.1 ­73.3 ­78.7 ­84.2 ­89.3 , ) Because this device is a GaAs MES FET with a Schottky barrier gate structure, it is necessary that
NEC
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nec 4164

mc33167 applications

Abstract: MC34167 . Also included is a low power standby mode that reduces power supply current to 36 mA. MARKING , equivalent Schottky barrier rectifier is recommended to fulfill these requirements. Thermal Protection , Schottky diode connected to the Switch Output be located as close to the IC as possible. Do not attempt , 84.2% Efficiency TOTAL T1 = Primary: Coilcraft M1496-A or General Magnetics Technology GMT
ON Semiconductor
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MC34167 MC33167 1N5825 mc33167 applications GMT-0223 dc/tx/1/2/1257/MC34167 Application Notes 5930B MUR415 2N3906

HVQFN16

Abstract: MO-220 quadrant 2. See Figure 2. SSL3250AHN/C1,528 5. Marking pin 1 indicator pin 1 indicator , triggering or by a time-out. The flash timing is given by Equation 3 and in Section 8.4.2. 50 k I LED = , . 8.4.2 Untimed Flash mode To avoid overloading of the main LED during a flash in Direct enable mode or , only one White LED is connected between VO and LED pins, the Schottky diode may be irreversibly , the inductor also contribute to the total system losses. 9.4 Rectifier diode Selecting a Schottky
NXP Semiconductors
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HVQFN16 MO-220 UM10204 EIA-481-C SSL3250A

HVQFN16

Abstract: MO-220 SSL3250AHN/C1 SSL3250AHN/C1,528 Pin 1 in quadrant 2. See Figure 1. 5. Marking pin 1 indicator , triggering or by a time-out. The flash timing is given by Equation 3 and in Section 8.4.2. 50 k I LED = , . 8.4.2 Untimed Flash mode To avoid overloading of the main LED during a flash in Direct enable mode or , only one White LED is connected between VO and LED pins, the Schottky diode may be irreversibly , the inductor also contribute to the total system losses. 9.4 Rectifier diode Selecting a Schottky
NXP Semiconductors
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NE4210S01-T1

Abstract: NE4210S01-T1B µm ORDERING INFORMATION (PLAN) Part Number Marking Supplying Form L NE4210S01-T1 , 10.34 8.42 6.36 5.48 4.38 3.80 3.25 3.05 2.80 2.54 2.31 2.12 1.99 1.83 1.66 1.52 1.45 , ­41.7 ­44.3 ­47.2 ­50.8 ­55.4 ­61.1 ­67.1 ­73.3 ­78.7 ­84.2 ­89.3 ­94.9 ­101.4 ­108.7 , ) Because this device is a GaAs MES FET with a Schottky barrier gate structure, it is necessary that
Renesas Electronics
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Abstract: Operational Features · High efficiency, 84.2% at full rated load current · Delivers up to 40 amps of output , /23/EEC and 93/68/EEC directives which facilitates CE Marking in user's end product · Board and , 230 0 84.2 86.2 2250 2250 2250 250 ms ms % % % Vd c Vd c Vd c MW pF 100% Load 50% Load , than Schottky diodes. This is the primary reason that the InQor converter has such high efficiency Synqor
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IQ24018QTA40 2250V 005-I201840

RX-4591CF

Abstract: rx4591cf . 10 8.4.2. Timer interrupt , . 12 8.3. 8.4. 8.6. 8.7. 9. External dimension / Marking layout , . 13 9.2. Marking layout , . Page - 10 MQ - 402 - 01 RX - 4591 CF 8.4.2. Timer interrupt · If TIE="1" when interrupt occurs , . 8.7. External connection example D1 VDD Schottky Barrier Diode Note 4.7 µF + RX-4591 VDD CE
Seiko Epson
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RX-4591CF rx4591cf RX - 4591 CF MQ402-01 Q414591A0000200

How year cycle code representation

Abstract: . 10 8.4.2. Timer interrupt , . 13 8.2. 8.3. 8.4. 8.5. 8.6. 8.7. 9. External dimension / Marking layout , . 14 9.2. Marking layout , NB 8.4.2. Timer interrupt · If TIE="1" when interrupt occurs, the /TIRQ pin outputs "L". · If TIE , , set the RTC into a disable state. 8.7. External connection example Note VDD Schottky Barrier
Seiko Epson
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How year cycle code representation MQ352-02 RX-4581NB Q4145819
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