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Part Manufacturer Description Datasheet BUY
LT3519EMS-2#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3519EMS-2#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3519EMS#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3463AEDD Linear Technology LT3463 - Dual Micropower DC/DC Converters with Schottky Diodes; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3473EDD Linear Technology LT3473 - Micropower 1A Boost Converter with Schottky and Output Disconnect; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3491ESC8#TRM Linear Technology LT3491 - White LED Driver in SC70 with Integrated Schottky; Package: SC70; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

MARKING 842 SCHOTTKY

Catalog Datasheet MFG & Type PDF Document Tags

SB2100

Abstract: SB220 LESHAN RADIO COMPANY, LTD. SB220 thru SB2100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 100V , Note: DO-15 molded plastic case The marking band indicates the cathode 3/3 LESHAN RADIO , -41&DO-15 ) Item L Dimension L 200±2 W H 84±2 21±2 Symbol Dimension L 200±2 W 84±2 H H Symbol 29±2 Symbol Dimension Box's Size W ( DO-201AD ) H Item
Leshan Radio Company
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SB230 SB240 SB250 SB260 MIL-STD-750 SB280

A-405

Abstract: SB1100 LESHAN RADIO COMPANY, LTD. SB120 thru SB1100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 100V Forward Current 1.0A Flammability Classification 94V-0 Low power loss,high efficiency For use in low , case The marking band indicates the cathode 3/3 LESHAN RADIO COMPANY, LTD. Packing Of , L Dimension L 200±2 W H 84±2 21±2 Symbol Dimension L 200±2 W 84±2
Leshan Radio Company
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A-405 DO-41

MARKING 842 SCHOTTKY

Abstract: A-405 LESHAN RADIO COMPANY, LTD. SB120 thru SB1100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 100V , -41 molded plastic case The marking band indicates the cathode 3/3 LESHAN RADIO COMPANY, LTD , ( DO-41&DO-15 ) Item H L Symbol Dimension L 200±2 W H 84±2 21±2 Symbol Dimension Box's Size W ( DO-201AD ) H Item Box's Size 200±2 W 84±2 H 29±2
Leshan Radio Company
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MARKING 842 SCHOTTKY

MARKING 842 SCHOTTKY

Abstract: SB5100 LESHAN RADIO COMPANY, LTD. SB520 thru SB5100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory Reverse Voltage 20 to 100V Forward Current , Note: DO-201AD molded plastic case The marking band indicates the cathode 3/3 LESHAN RADIO , -41&DO-15 ) Item L Dimension L 200±2 W H 84±2 21±2 Symbol Dimension L 200±2 W 84±2 H H Symbol 29±2 Symbol Dimension Box's Size W ( DO-201AD ) H Item
Leshan Radio Company
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SB530 SB540 SB550 SB560 SB580

sb340 diode

Abstract: SB360 diode LESHAN RADIO COMPANY, LTD. SB320 thru SB3100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 100V Forward Current 3.0A Flammability Classification 94V-0 Low power loss,high efficiency For use in low , 25.4 5.0 1.2 Max. 9.5 5.6 1.3 Note: DO-201AD molded plastic case The marking band , L 200±2 W H 84±2 21±2 Symbol Dimension L 200±2 W 84±2 H H
Leshan Radio Company
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SB330 SB340 SB350 SB360 sb340 diode SB360 diode SB390
Abstract: /W Package Marking and Ordering Information Device Marking FDQ7698S Device Reel Size 13" FDQ7698S , Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 50 50 80 38 4814 1324 842 300 321 98 , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% See "SyncFET Schottky diode characteristics , SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in , Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the Fairchild Semiconductor
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SO-14

FSC60ML

Abstract: FUJITSU GaAs FET FSC60ML General Purpose GaAs FET FEATURES · Low Noise Figure: NF=0.8dB (Typ.) @ f=4GHz · High Associated Gain: Gas=11dB (Typ.) @ f=4GHz · Small Size: 6 pin Plastic Package for SMT Applications. DESCRIPTION The FSC60ML is a low noise GaAs FET with an N-channel Schottky gate that is well suited for GPS , : The package marking "FGDT" shows the part number, year and month of manufacturer. Where: "FG" , 155.7 153.1 140.8 129.4 118.9 109.3 100.4 92.0 84.2 76.6 0.055 0.010 0.014 0.019 0.024 0.024 0.033 0.038
Fujitsu
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FUJITSU GaAs FET Fujitsu GaAs FET Amplifier nf 817 gaas fet marking a gaas fet marking D FCSI0598M200

E3P303

Abstract: 842 so8 soic-8 marking http://onsemi.com 842 NTMSD3P303R2 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IF, INSTANTANEOUS , NTMSD3P303R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package , (on), · Independent Pin-Outs for MOSFET and Schottky Die · Less Component Placement for Board Space , http://onsemi.com Schottky Diode with Low VF Allowing for Flexibility in Application Use MOSFET -3.05 AMPERES -30 VOLTS 0.085 W @ VGS = -10 V SCHOTTKY DIODE 3.0 AMPERES 30 VOLTS 420 mV @ IF =
ON Semiconductor
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E3P303 842 so8 soic-8 marking 0E-02 0E-01 0E-05 0E-04 0E-03

TS1937

Abstract: TS1937CX5 maintain high efficiency, the average current rating of the Schottky diode should be large than the peak inductor current, IPK. Schottky diode with a low forward drop and fast switching speeds are ideal for increase efficiency in portable application. Choose a reverse breakdown of the Schottky diode large than the output voltage. A Schottky diode rated at 100mA to 200mA is sufficient for most TS1937 , ) 20 20 20 20 Resistor () 4.75 4.75 4.75 4.75 Efficiency (%) 83.5 84.2 84.3 84.6 LED Current Control
Taiwan Semiconductor
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TS1937CX5

TS1937

Abstract: 22mH inductor , the average current rating of the Schottky diode should be large than the peak inductor current, IPK. Schottky diode with a low forward drop and fast switching speeds are ideal for increase efficiency in portable application. Choose a reverse breakdown of the Schottky diode large than the output voltage. A Schottky diode rated at 100mA to 200mA is sufficient for most TS1937 applications. Capacitor Selection , 12pcs 20 20 20 20 4.75 4.75 4.75 4.75 83.5 84.2 84.3 84.6 LED Dimming Control
Taiwan Semiconductor
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22mH inductor SOT-25 RF detect ELECTRONIC dimming BALLAST WLED driver

22 diode

Abstract: FDQ7698S , Junction-to-Ambient (Note 1a & 1b) 52 68 (Note 1c & 1d) 94 °C/W 118 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDQ7698S FDQ7698S 13 , Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 4814 1324 842 300 321 98 1.5 1.2 pF Q2 Q1 Q2 Q1 Q2 , : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% See "SyncFET Schottky , (W) FDQ7698S Typical Characteristics : Q2 SyncFET Schottky Body Diode Characteristics
Fairchild Semiconductor
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22 diode FDS6676

40847

Abstract: NE4210S01 µm ORDERING INFORMATION (PLAN) Part Number NE4210S01-T1 Marking Supplying Form Tape & , 10.34 8.42 6.36 5.48 4.38 3.80 3.25 3.05 2.80 2.54 2.31 2.12 1.99 1.83 1.66 1.52 1.45 , ­41.7 ­44.3 ­47.2 ­50.8 ­55.4 ­61.1 ­67.1 ­73.3 ­78.7 ­84.2 ­89.3 ­94.9 ­101.4 ­108.7 , ) Because this device is a GaAs MES FET with a Schottky barrier gate structure, it is necessary that
NEC
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NE4210S01 NE4210S01-T1B 40847 ku 1490

NE4210S01

Abstract: nec 4164 160 µm ORDERING INFORMATION (PLAN) Part Number NE4210S01-T1 NE4210S01-T1B Marking L Supplying Form , ­14.03 ­14.37 ­14.54 ­14.78 ­15.19 16.25 19.06 12.08 10.34 8.42 6.36 5.48 4.38 3.80 3.25 3.05 2.80 2.54 , ­21.3 ­25.4 ­29.2 ­33.0 ­36.0 ­38.8 ­41.7 ­44.3 ­47.2 ­50.8 ­55.4 ­61.1 ­67.1 ­73.3 ­78.7 ­84.2 ­89.3 , ) Because this device is a GaAs MES FET with a Schottky barrier gate structure, it is necessary that
NEC
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nec 4164

mc33167 applications

Abstract: MC34167 . Also included is a low power standby mode that reduces power supply current to 36 mA. MARKING , equivalent Schottky barrier rectifier is recommended to fulfill these requirements. Thermal Protection , Schottky diode connected to the Switch Output be located as close to the IC as possible. Do not attempt , 84.2% Efficiency TOTAL T1 = Primary: Coilcraft M1496-A or General Magnetics Technology GMT
ON Semiconductor
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MC34167 MC33167 1N5825 mc33167 applications GMT-0223 dc/tx/1/2/1257/MC34167 Application Notes 5930B MUR415 2N3906

HVQFN16

Abstract: MO-220 quadrant 2. See Figure 2. SSL3250AHN/C1,528 5. Marking pin 1 indicator pin 1 indicator , triggering or by a time-out. The flash timing is given by Equation 3 and in Section 8.4.2. 50 k I LED = , . 8.4.2 Untimed Flash mode To avoid overloading of the main LED during a flash in Direct enable mode or , only one White LED is connected between VO and LED pins, the Schottky diode may be irreversibly , the inductor also contribute to the total system losses. 9.4 Rectifier diode Selecting a Schottky
NXP Semiconductors
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HVQFN16 MO-220 UM10204 EIA-481-C SSL3250A

HVQFN16

Abstract: MO-220 SSL3250AHN/C1 SSL3250AHN/C1,528 Pin 1 in quadrant 2. See Figure 1. 5. Marking pin 1 indicator , triggering or by a time-out. The flash timing is given by Equation 3 and in Section 8.4.2. 50 k I LED = , . 8.4.2 Untimed Flash mode To avoid overloading of the main LED during a flash in Direct enable mode or , only one White LED is connected between VO and LED pins, the Schottky diode may be irreversibly , the inductor also contribute to the total system losses. 9.4 Rectifier diode Selecting a Schottky
NXP Semiconductors
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NE4210S01-T1

Abstract: NE4210S01-T1B µm ORDERING INFORMATION (PLAN) Part Number Marking Supplying Form L NE4210S01-T1 , 10.34 8.42 6.36 5.48 4.38 3.80 3.25 3.05 2.80 2.54 2.31 2.12 1.99 1.83 1.66 1.52 1.45 , ­41.7 ­44.3 ­47.2 ­50.8 ­55.4 ­61.1 ­67.1 ­73.3 ­78.7 ­84.2 ­89.3 ­94.9 ­101.4 ­108.7 , ) Because this device is a GaAs MES FET with a Schottky barrier gate structure, it is necessary that
Renesas Electronics
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Abstract: Operational Features · High efficiency, 84.2% at full rated load current · Delivers up to 40 amps of output , /23/EEC and 93/68/EEC directives which facilitates CE Marking in user's end product · Board and , 230 0 84.2 86.2 2250 2250 2250 250 ms ms % % % Vd c Vd c Vd c MW pF 100% Load 50% Load , than Schottky diodes. This is the primary reason that the InQor converter has such high efficiency Synqor
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IQ24018QTA40 2250V 005-I201840

RX-4591CF

Abstract: rx4591cf . 10 8.4.2. Timer interrupt , . 12 8.3. 8.4. 8.6. 8.7. 9. External dimension / Marking layout , . 13 9.2. Marking layout , . Page - 10 MQ - 402 - 01 RX - 4591 CF 8.4.2. Timer interrupt · If TIE="1" when interrupt occurs , . 8.7. External connection example D1 VDD Schottky Barrier Diode Note 4.7 µF + RX-4591 VDD CE
Seiko Epson
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RX-4591CF rx4591cf RX - 4591 CF MQ402-01 Q414591A0000200

How year cycle code representation

Abstract: . 10 8.4.2. Timer interrupt , . 13 8.2. 8.3. 8.4. 8.5. 8.6. 8.7. 9. External dimension / Marking layout , . 14 9.2. Marking layout , NB 8.4.2. Timer interrupt · If TIE="1" when interrupt occurs, the /TIRQ pin outputs "L". · If TIE , , set the RTC into a disable state. 8.7. External connection example Note VDD Schottky Barrier
Seiko Epson
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How year cycle code representation MQ352-02 RX-4581NB Q4145819
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