NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| M27256 | Intel | 256K(32K x 8) UV ERASABLE PROM |
9 pages, |
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| M27256 | Intersil Corporation | 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET |
7 pages, |
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| M27256 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| M27256 | STMicroelectronics | NND - NMOS 256 KBIT (32KB X8) UV EPROM |
10 pages, |
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| M27256 | STMicroelectronics | NMOS 256K (32K x 8) UV EPROM |
10 pages, |
Original | |
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| M27256 | WSI Corporation | EPROM CROSS REFERENCE GUIDE |
1 pages, |
Original | |
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| M27256-1F1 | STMicroelectronics | NMOS 256K 32K x 8 UV EPROM |
10 pages, |
Original | |
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| M27256-1F1 | STMicroelectronics | EPROM, 256Kbit Density, Parallel, UV Reprogramability |
10 pages, |
Original | |
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| M27256-1F6 | STMicroelectronics | EPROM, 256Kbit Density, Parallel, UV Reprogramability |
10 pages, |
Original | |
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| M27256-1F6 | STMicroelectronics | NMOS 256K 32K x 8 UV EPROM |
10 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: M27256 NMOS 256K (32K x 8) UV EPROM DATA BRIEFING FAST ACCESS TIME: 170ns EXTENDED , (F) DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. The M27256 is housed in a 28 pin Window Ceramic , programming procedure. Logic Diagram VCC VPP 15 8 A0-A14 A0-A14 E Q0-Q7 M27256 G , M27256 DIP Pin Connections Signal Names A0 - A14 VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 ... | Original |
2 pages, |
M27256 M27256 abstract |
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| Abstract: M27256 256 Kbit (32Kb x 8) NMOS UV EPROM DATA BRIEFING FAST ACCESS TIME: 170ns EXTENDED , M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. The M27256 is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. , Voltage VSS M27256 Address Inputs Q0-Q7 Q0-Q7 Ground G B27256/804 B27256/804 Complete data available on DATA-on-DISC CD-ROM or at www.st.com VSS AI00767B AI00767B 1/2 M27256 DIP Pin Connections ... | Original |
2 pages, |
M27256 M27256 abstract |
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| Abstract: : M27256-2F1 ^ M27256F1 ^ M27256-3F1/ M27256-4F1 ^ A0-A14 A0-A14 CE OE 00-07 M27256-25F1 M27256-30F1 M27256-45F1 M27256F6 M27256-4F6 y pin connections pin names ADDRESS INPUT CHIP ENABLE INPUT OUTPUT ENABLE INPUT , TIME: 200ns MAX M27256-2F1 250ns MAX < > ' 300ns MAX M27256-3F1/M27256-30F1 450ns MAX < > 0 to 70°C STANDARD TEMPERATURE RANGE -40 to +85°C EXTENDED , M27256. A high level CE"input inhibits the other M27256s from being programmed. PROGRAM VERIFY A verify ... | OCR Scan |
9 pages, |
Z8000 27256-45 M27256-2F1 M27256-3F1 M27256-4F1 M27256F1 27256 eprom M27256 30F1 27256-2 M27256 abstract |
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| Abstract: ) Symbol Parameter M27256-20 M27256-25 M27256-35 Units Comments Min Max Min Max Min Max *ACC , systems with firmware Intensive architectures. The combination of the M27256's high density, cost , M27256's large storage capability of 32K bytes enables it to function as a high density software carrier. , (VPP) will permanently damage the M27256. Initially, and after each erasure, all bits of the M27256 , applied to the CE input with Vpp at 12.5V will program the selected M27256. Verify A verify should be ... | OCR Scan |
9 pages, |
M8051 M80186 M27256-35 M27256-25 M27256-20 M27256 M27256 abstract |
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| Abstract: CHARACTERISTICS (Over Specified Operating Conditions) Symbol Parameter M27256-20 M27256-25 M27256-35 Units , systems with firmware intensive architectures. The combination of the M27256's high density, cost , M27256's large storage capability of 32K bytes enables it to function as a high density software carrier. , applied to the CE input with Vpp at 12.5V will program the selected M27256. Verify A verify should be , the 25°C ± 5°C ambient temperature range that is required when programming the M27256. To activate ... | OCR Scan |
9 pages, |
M8051 M80186 M27256-35 M27256-25 M27256-20 M27256 M27256 abstract |
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| Abstract: may be common. A TTL low pulse applied to a M27256's E input, with VPP = 12.5V, will program that M27256. A high level E input inhibits the other M27256s from being programmed. Program Verify NO A , when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. Two identifier bytes may then be sequenced from the device , M27256 NMOS 256 Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN s FAST ACCESS TIME: 170ns s ... | Original |
10 pages, |
M27256 1N914 M27256 abstract |
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| Abstract: M27256's E input, with VPP = 12.5V, will program that M27256. A high level E input inhibits the other , temperature range that is required when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. Two identifier bytes may then be , M27256 NMOS 256 Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN s FAST ACCESS TIME: 170ns s , SIGNATURE s PROGRAMMING VOLTAGE: 12V DESCRIPTION The M27256 is a 262,144 bit UV erasable and ... | Original |
10 pages, |
M27256 1N914 M27256 abstract |
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| Abstract: be common. A TTL low pulse applied to a M27256's E input, with VPP = 12.5V, will program that M27256. A high level E input inhibits the other M27256s from being programmed. Program Verify NO A , when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. Two identifier bytes may then be sequenced from the device , M27256 NMOS 256K (32K x 8) UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE ... | Original |
10 pages, |
M27256 1N914 M27256 abstract |
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| Abstract: be common. A TTL low pulse applied to a M27256's E input, with VPP = 12.5V, will program that M27256. A high level E input inhibits the other M27256s from being programmed. Program Verify NO A , functionalin the 25°C ± 5°C ambient temperature range that is required when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. , M27256 NMOS 256K (32K x 8) UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE ... | Original |
10 pages, |
M27256 1N914 M27256 abstract |
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| Abstract: be common. A TTL low pulse applied to a M27256's E input, with VPP = 12.5V, will program that M27256. A high level E input inhibits the other M27256s from being programmed. Program Verify NO A , functionalin the 25°C ± 5°C ambient temperature range that is required when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. , M27256 NMOS 256K (32K x 8) UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE ... | Original |
10 pages, |
M27256 1N914 M27256 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| ST | 256 KBIT (32KB X 8) NMOS UV EPROM - BRIEF DATA M27256 256 KBIT (32KB X 8) NMOS Format M27256 256 Kbit (32Kb x 8) NMOS UV EPROM DATA BRIEFING FAST ACCESS TIME: 170ns EXTENDED PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V DESCRIPTION The M27256 is .768 words by 8 bits. The M27256 is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The data available on DATA-on-DISC CD-ROM or at www.st.com AI00767B AI00767B AI00767B AI00767B 15 A0-A14 A0-A14 A0-A14 A0-A14 Q0-Q7 V PP V CC M27256 G E www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4736.htm |
STMicroelectronics | 02/04/1999 | 2.58 Kb | HTM | 4736.htm |
| No abstract text available www.datasheetarchive.com/download/15031761-681210ZC/m27256-2fi.jpg |
User Photos | 23/05/2012 | 11.96 Kb | JPG | m27256-2fi.jpg |
| ST | NND - NMOS 256 KBIT (32KB X8) UV EPROM Datasheet NND - NMOS 256 KBIT (32KB X8) UV EPROM M27256 Document Format Size Document Number Date Update Pages Portable Document Format 2376 15/12/2000 10 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/2376-v4.htm |
STMicroelectronics | 20/12/2000 | 2.65 Kb | HTM | 2376-v4.htm |
| SGS-THOMSON | NMOS 16K (2K X 8) UV EPROM - BRIEF DATA M27256 NMOS 16K (2K X 8) UV EPROM - BRIEF DATA Document Number: 4736 Date Update: 25/09/96 Pages: 2 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4736.htm |
STMicroelectronics | 06/02/1998 | 0.92 Kb | HTM | 4736.htm |
| ST | NMOS 256 KBIT (32KB X8) UV EPROM M27256 NMOS 256 KBIT (32KB X8) UV EPROM Document Number: 2376 Date Update: 23/10/95 Pages: 10 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/2376-v2.htm |
STMicroelectronics | 14/06/1999 | 0.84 Kb | HTM | 2376-v2.htm |
| SGS-THOMSON | NMOS 256K (32K x 8) UV EPROM M27256 NMOS 256K (32K x 8) UV EPROM Document Number: 2376 Date Update: 23/10/95 Pages: 10 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/2376.htm |
STMicroelectronics | 06/02/1998 | 0.9 Kb | HTM | 2376.htm |
| ST | NMOS 256 KBIT (32KB X8) UV EPROM Datasheet NMOS 256 KBIT (32KB X8) UV EPROM M27256 Document Format Size Document Number Date Update Pages Portable Document Format 2376 23/10/1995 10 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/2376-v3.htm |
STMicroelectronics | 20/10/2000 | 2.8 Kb | HTM | 2376-v3.htm |
| ST | NMOS 256K (32K x 8) UV EPROM M27256 NMOS 256K (32K x 8) UV EPROM Document Number: 2376 Date Update: 23/10/95 Pages: 10 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/2376-v1.htm |
STMicroelectronics | 31/03/1999 | 0.87 Kb | HTM | 2376-v1.htm |
| ST | 256 KBIT (32KB X 8) NMOS UV EPROM - BRIEF DATA M27256 256 KBIT (32KB X 8) NMOS UV EPROM - BRIEF DATA Document Number: 4736 Date Update: 09/04/98 Pages: 2 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4736-v1.htm |
STMicroelectronics | 31/03/1999 | 0.87 Kb | HTM | 4736-v1.htm |
| Datasheet NND - NMOS 256 KBIT (32KB X8) UV EPROM M27256 Document Format Size information on a product still in production but not recommended for new designs. M27256 NMOS 256 Kbit (32 PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V DESCRIPTION The M27256 is a .768 words by 8 bits. The M27256 is housed in a 28 pin Window Ceram- ic Frit-Seal Dual-in-Line package . Figure 1. Logic Diagram AI00767B AI00767B AI00767B AI00767B 15 A0-A14 A0-A14 A0-A14 A0-A14 Q0-Q7 V PP V CC M27256 G E V SS 8 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2376-v3.htm |
STMicroelectronics | 20/12/2000 | 20.35 Kb | HTM | 2376-v3.htm |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| M27256-1F1X | ST Microelectronics | UV-Erasable PROM (EPROM) - Prog. Time=<128Sec | |
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| M27256-20F1X | ST Microelectronics | UV-Erasable PROM (EPROM) - Additional Burn In | |
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| M27256-25F1X | ST Microelectronics | UV-Erasable PROM (EPROM) - Additional Burn In | |
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| M27256-2F1X | ST Microelectronics | UV-Erasable PROM (EPROM) - Additional Burn In | |
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| M27256-30F1 | N/A | UV-Erasable PROM (EPROM) - Isb40mA | |
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| M27256-3F1X | ST Microelectronics | UV-Erasable PROM (EPROM) - Additional Burn In | |
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| M27256-45F1 | N/A | UV-Erasable PROM (EPROM) - Isb40mA | |
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| M27256-4F1X | ST Microelectronics | UV-Erasable PROM (EPROM) - Additional Burn In | |
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| M27256F1X | ST Microelectronics | UV-Erasable PROM (EPROM) - Additional Burn In | |
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| M27256F6X | ST Microelectronics | UV-Erasable PROM (EPROM) - Additional Burn In | |
| Part | Similar Part | Notes |