500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
PMP4016 Texas Instruments 36VDC-72VDC Input, 5V/36A Interleaved Active Clamp Forward visit Texas Instruments
SN65LVDS33MDREPR Texas Instruments IC LINE RECEIVER, PDSO16, GREEN, PLASTIC, SOIC-16, Line Driver or Receiver visit Texas Instruments
SN55LVDS32FK Texas Instruments QUAD LINE RECEIVER, CQCC20, CERAMIC, LCC-20 visit Texas Instruments
SN65LVDS31ID Texas Instruments QUAD LINE TRANSCEIVER, PDSO16 visit Texas Instruments
SN75LVDS82CDGG Texas Instruments LINE RECEIVER, PDSO56 visit Texas Instruments
SN75LVDS9637DGK Texas Instruments DUAL LINE RECEIVER, PDSO8, PLASTIC, SO-8 visit Texas Instruments

M 727 36A

Catalog Datasheet MFG & Type PDF Document Tags

IRFIBC30G

Abstract: mosfet 600V 60A TO-220 Gate Charge â'" â'" 31 nC Id=3.6A Vds=360V Vgs=10V See Fig. 6 and 13 © Qgs Gate-to-Source Charge â , Vdd=300V Id=3.6A Rg=12î2 Rd=82D See Figure 10© t, Rise Time â'" 13 â'" td(off) Turn-Off Delay , Time â'" 400 810 ns Tj=25°C, IF=3.6A di/dt=100A/|xs © Qrr Reverse Recovery Charge â'" 2.1 4.2 (iC , , °C VDS = 100V 20US PULSE WIDTH CC c O ro Q O m V(35, Gate-to-Source Voltage (volts) Fig 3. Typical
-
OCR Scan

8039

Abstract: GRS-201 DIMENSIONS IN INCHES (MILLIMETERS) DO NOT SCALE DRAWING . Dwg. No. GRSâ'"2011â'"2080 PANEL PIERCING £ of switch 25 + .005 -.000 (28.58 ^qq ) £ of switch + +.005 â'¢550 -.000 (13.97 +-13) 1.235 +.01 5 â'"H (31.37 +.38) (20.27) 680 +.010 7.27 +.25) â'¢070 DIA HOLE TYP. (1.78) .384 36° TRAVEL REE. 1.230 (31.24) .540 +.010 (13.72 +.25) REE. .470 +.010 âºI (11.94 +.25) .370 +.025 (9.40 +.64) .020 +.012 (.51 +.30) REE. .652 +.010 (16.56 +.25) 1.120 (28.44) (6.99 +.25) TYP. m I S a.: o O in z o
-
OCR Scan

J40A

Abstract: BJ40 10 SM B G 36 SM B G 36A SM BJ36 SM B J36A P6KE43A P6KE47 SM B G 40 SM B G 40A SM BJ40 S M B J40A , Transient Voltage Suppressors Part N um ber I M icrosem i i D ivision ! Scottsdale Scottsdale , 64.5 64.8 73.5 76.7 69.4 76.7 6 9.4 70.1 80.3 72.7 80.3 72.7 80.5 77 85.5 77.4 85.5 77,4 89 91.1 82.4 , w ed by ascending Vw m (volts) Part Specific« Notes; 1. Pulse W idth is. sp e cifie d a s typ e: t) 'O/tOOOusat, 2 ; 6/20 usuc, or 3] 150 nsec Genera! Notes: 1. inform ation on contacting M icro sem i
-
OCR Scan
J40A BJ40 TVS-34

2SD799

Abstract: AC75 Tstg -55-V150 °c EQUIVALENT CIRCUIT BASE COLLECTOR J-0.3MAX, L5MAX. 0.76 Ã"3.6±aZ 3( M, g , COLLECTOR-O.4EMITTER VOLTAGE V0E (V) 0.8 g gg H > ^ H u5s 0 O COMMON ¿g EMITTER 1-6 m g To = Z5lC «ri , iMjiJiHiMJi"re:»1â'"1 â  corporation -727- V This Material Copyrighted By Its Respective Manufacturer , 79 5 D T-33-29 2SD799 ' < A» « H m o t-> o H J Pc - Ta (D To =Ta (INFINITE HEAT SINK) 300 X
-
OCR Scan
AC75 hFE-60 300x2 2S0799 300X2 70X70X2

8v80

Abstract: VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1M VGSS VGSM 1100V 36A 240m 300ns , nA TJ = 125°C 50 4 A mA VGS = 10V, ID = 0.5 · ID25, Note 1 240 m © 2008 IXYS , ,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771 , Temperature Fig. 3. Output Characteristics @ 125ºC 20 15 6V 10 2.4 2.2 2.0 I D = 36A 1.8
IXYS
Original
8v80 IXFN36N110P E153432 50/60H 36N110P
Abstract: = RDS(on) trr 1100V 36A 240m 300ns miniBLOC, SOT-227 E153432 S G Either Source terminal , 3.5 6.5 ±300 50 4 240 V V nA A mA m Applications: z z z VGS = 10V, ID = 0.5 · ID25, Note 1 , ,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6 , Temperature VGS = 10V RDS(on) - Normalized 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 I D = 36A I D = 18A ID - IXYS
Original

IXFH36N50P

Abstract: IXFT36N50P PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P VDSS ID25 trr RDS(on) = = 500V 36A 170m 200ns , Low RDS(on) and QG Advantages z z 25 A 500 A 170 m z High Power Density Easy to Mount , ,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071 , VGS = 10V 3.0 2.6 2.2 I D = 18A 1.8 1.4 1.0 R DS(on) - Normalized I D = 36A 24 ID -
IXYS
Original
PLUS220SMD PLUS220 36N50P 7-15-11-E
Abstract: ¸' â'¢à¸'wideband, 5 to 3000 MHz â'¢à¸'goodà¸'L-Rà¸'isolation,à¸'36à¸'dBà¸'typ. â'¢à¸'excellentà¸'L-Ià¸'isolation , ) Outline Drawing LO/RF CONVERSION LOSS* (dB) Mid-Band m IF â'" X 5-3000 5-1500 σ Max. 6.5 fL-fU .15 LO-RF ISOLATION (dB) LO-IF ISOLATION (dB) L M U L M U , D .020 0.51 E .075 1.91 F G .250 .425 6.35 10.80 M N .270 .540 6.86 13.72 P , 3030.11 7.27 7.33 7.43 7.53 7.67 30.13 30.10 30.14 30.39 32.41 51.62 48.05 46.47 43.08 Mini-Circuits
Original
SYM-30DLHW TTT167 2002/95/EC 30DLHW

123B16

Abstract: = 36 A = 170 m Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M Maximum Ratings 500 500 ± 30 V V V A A A mJ J , V, ID = 0.5 ID25 Pulse test, t 300 µs, duty cycle d 2 % 170 m Easy to mount Space savings , ,463 6,727,585 6,759,692 IXFH36N50P IXFT 36N50P IXFV 36N50P Fig. 1. Output Characteristics @ 25ºC , 4.5V 5V 5.5V I D = 36A -50 -25 0 25 50 75 100 125 150 V D S - Volts
IXYS
Original
123B16 405B2
Abstract: = 36 A = 170 m Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M Maximum Ratings 500 500 ± 30 V V V A A A mJ J , V, ID = 0.5 ID25 Pulse test, t 300 µs, duty cycle d 2 % 170 m Easy to mount Space savings , ,463 6,727,585 6,759,692 IXFH36N50P IXFT 36N50P IXFV 36N50P Fig. 1. Output Characteristics @ 25ºC , 100 125 150 I D = 18A I D = 36A V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID IXYS
Original

DM 311 BG 29

Abstract: SUGGESTED SOLDER PAD LAYOUT 0.093â' 0.048â' 0.036â' w w w.m c c se m i.c om Revision: E 1 , 30A / MK 33A / MM 36A / MP 40A / MR 43A / MT 45A / MV 15.6 16.7 17.8 18.9 20 22.2 24.4 , 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 8.6 8.2 7.7 7.2 6.8 6.2 5.6 , 100 / NZ 110 / PE 120 / PG 130 / PK 150 / PM 160 / PP 170 / PR w w w.m c c se m i.c om , 53.3 58.1 64.5 69.4 72.7 8.6 8.2 7.7 7.2 6.8 6.2 5.6 5.1 4.8 4.4 4.1 3.8 3.4 3.1
-
Original
DM 311 BG 29 SMF170 200WATTS

36N50P

Abstract: IXFH36N50P ID25 = 500 V = 36 A = 170 m RDS(on) TO-247 AD (IXFH) (TAB) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M 500 500 V V VGS VGSM , 25 250 A A 170 m International standard packages Unclamped Inductive Switching (UIS , 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH36N50P , 2.2 1.9 I D = 36A 1.6 I D = 18A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12
IXYS
Original
36N50PS

36n50P

Abstract: PLUS220SMD 36N50PS RDS(on) = 500 V = 36 A = 170 m TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M 500 500 VGS , µA µA 170 m G D D (TAB) S PLUS220 SMD(IXTV.S) G S G = Gate S = Source D , ,405B2 6,710,463 6,727,585 6,759,692 20 22 24 IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXT , 1.9 I D = 36A 1.6 I D = 18A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 14
IXYS
Original
V36N50P

36p15

Abstract: IXTP36P15P - 150V - 36A 110m TO-3P (IXTQ) G S D (TAB) G D S D (TAB) G D S D (TAB , /dt ruggedness High power density Fast switching Easy to parallel ±100 nA - 10 A - 250 A 110 m , ,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 , Amperes 1.80 1.60 1.40 1.20 1.00 0.80 I D = - 36A I D = -18A -25 - 7V -20 -15 -10 -5 0 0 -1 -2 -3
IXYS
Original
IXTP36P15P 3-26-08-B 36p15 IXTA36P15P IXTQ36P15P 36P15P

36P15

Abstract: IXTA36P15P ) G - 150V - 36A 110m TO-247 (IXTH) D (TAB) D S G Symbol Test Conditions , Choppers Automatic Test Equipment Current Regulators 110 m DS99791C(6/09) IXTA36P15P , 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7 , - 6V 1.8 I D = - 36A 1.6 I D = -18A 1.4 1.2 1.0 -10 0.8 -5 0.6 - 5V
IXYS
Original
IXTH36P15P to-247 to-220 to-3p TO263

5BFz

Abstract: 5bgm 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103.0 113.0 121.0 126.0 , 30A 5.0SMDJ 33A 5.0SMDJ 36A 5.0SMDJ 40A 5.0SMDJ 43A 5.0SMDJ 45A 5.0SMDJ 48A 5.0SMDJ 51A 5.0SMDJ 54A , Minimu Peak Pulse Power Dissipation on 10/1000µs waveform (Note 1,2 ,FIG.1) PPPM Watts m 5000 SEE IPPM
Littelfuse
Original
5BFz 5bgm 5bge 33cA 5000W

IXGR50N160H1

Abstract: Advance Technical Information High Voltage IGBT with Diode IXGR50N160H1 VCES = 1600V IC110 = 36A VCE(sat) 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1M 1600 , = 450A/s V V 2.10 TJ = 150°C V 40 m 23 27 230 400 TJ = 125°C A A ns ns , ,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463
IXYS
Original
338B2

12V 1.2Ah battery

Abstract: DBMM ) 150A/180A(5sec) Approx. 14 m Nominal Operating Temperature Range Float Charging Voltage , ~104 ) 3 (77 5 ) 25 13.5 to 13.8 VDC/unit Average at 25 (77 3.6A ) ) 14.4 to 15.0 VDC , 7.43 7.32 7.27 7.14 6.93 6.56 2HR 4.00 3.96 3.94 3.89 3.81 3.64 3HR 2.84 2.82 2.80
-
Original
12V 1.2Ah battery DBMM UL924 UL1989 94-HB/F E50263 94-V0/F E88637
Abstract: : M a te s v .itf. CL r 3 0 T, SUV, LSOT T IE EMM M M 3 rC - r Insulator Material: Black , 3.6A 80 C 3A 3A EP OPTION Through Hole 4.8A -A T*â'™ % -EC OPTION -EL , . TIE, .125 SMM. MMS, â'™ 5L(1.91 i .075 i (1.65) CLT .065 A -EL & -EBC (4 ^ M 175 T , chart 05 thru 50 Max Proceeding T«mp: .040 = 1 5 0i Gold on past 150.1' (3.81 u m i Tin o n t = ' }â  i\ T I T (3 -
OCR Scan
TMMH-125-04-G-DV-EP TMMH-122-04-T-DV-LC 1-800-3AMTEC-9 85-0-F

36N50P

Abstract: IXTQ36N50P = 500 V = 36 A 170 m RDS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M 500 , mount Space savings High power density m DS99228(11/04) IXTQ 36N50P IXTT 36N50P Symbol , 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTQ 36N50P IXTT 36N50P Fig. 2 , Volts 24 20 5.5V 16 12 5V 8 4.5V 4 VGS = 10V 2.5 2.2 1.9 I D = 36A
IXYS
Original
IXTQ36N50P
Showing first 20 results.