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Part Manufacturer Description Datasheet BUY
PMP4016 Texas Instruments 36VDC-72VDC Input, 5V/36A Interleaved Active Clamp Forward visit Texas Instruments
SN65LVCP408PAPR Texas Instruments 8x8 4.25Gbps Crosspoint Switch 64-HTQFP -40 to 85 visit Texas Instruments Buy
ISO7821LLDWWR Texas Instruments High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 visit Texas Instruments
SN65MLVD206BDR Texas Instruments High Noise Immunity 200Mbps M-LVDS Transceiver 8-SOIC -40 to 85 visit Texas Instruments Buy
ISO7821LLDWW Texas Instruments High-Performance, 8000 VPK Reinforced Isolated Dual LVDS Buffer 16-SOIC -55 to 125 visit Texas Instruments Buy
SN65LVCP408PAPT Texas Instruments 8x8 4.25Gbps Crosspoint Switch 64-HTQFP -40 to 85 visit Texas Instruments

M 727 36A

Catalog Datasheet MFG & Type PDF Document Tags

IRFIBC30G

Abstract: mosfet 600V 60A TO-220 Gate Charge â'" â'" 31 nC Id=3.6A Vds=360V Vgs=10V See Fig. 6 and 13 © Qgs Gate-to-Source Charge â , Vdd=300V Id=3.6A Rg=12î2 Rd=82D See Figure 10© t, Rise Time â'" 13 â'" td(off) Turn-Off Delay , Time â'" 400 810 ns Tj=25°C, IF=3.6A di/dt=100A/|xs © Qrr Reverse Recovery Charge â'" 2.1 4.2 (iC , , °C VDS = 100V 20US PULSE WIDTH CC c O ro Q O m V(35, Gate-to-Source Voltage (volts) Fig 3. Typical
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8039

Abstract: GRS-201 DIMENSIONS IN INCHES (MILLIMETERS) DO NOT SCALE DRAWING . Dwg. No. GRSâ'"2011â'"2080 PANEL PIERCING £ of switch 25 + .005 -.000 (28.58 ^qq ) £ of switch + +.005 â'¢550 -.000 (13.97 +-13) 1.235 +.01 5 â'"H (31.37 +.38) (20.27) 680 +.010 7.27 +.25) â'¢070 DIA HOLE TYP. (1.78) .384 36° TRAVEL REE. 1.230 (31.24) .540 +.010 (13.72 +.25) REE. .470 +.010 âºI (11.94 +.25) .370 +.025 (9.40 +.64) .020 +.012 (.51 +.30) REE. .652 +.010 (16.56 +.25) 1.120 (28.44) (6.99 +.25) TYP. m I S a.: o O in z o
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J40A

Abstract: BJ40 10 SM B G 36 SM B G 36A SM BJ36 SM B J36A P6KE43A P6KE47 SM B G 40 SM B G 40A SM BJ40 S M B J40A , Transient Voltage Suppressors Part N um ber I M icrosem i i D ivision ! Scottsdale Scottsdale , 64.5 64.8 73.5 76.7 69.4 76.7 6 9.4 70.1 80.3 72.7 80.3 72.7 80.5 77 85.5 77.4 85.5 77,4 89 91.1 82.4 , w ed by ascending Vw m (volts) Part Specific« Notes; 1. Pulse W idth is. sp e cifie d a s typ e: t) 'O/tOOOusat, 2 ; 6/20 usuc, or 3] 150 nsec Genera! Notes: 1. inform ation on contacting M icro sem i
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J40A BJ40 TVS-34

2SD799

Abstract: AC75 Tstg -55-V150 °c EQUIVALENT CIRCUIT BASE COLLECTOR J-0.3MAX, L5MAX. 0.76 Ã"3.6±aZ 3( M, g , COLLECTOR-O.4EMITTER VOLTAGE V0E (V) 0.8 g gg H > ^ H u5s 0 O COMMON ¿g EMITTER 1-6 m g To = Z5lC «ri , iMjiJiHiMJi"re:»1â'"1 â  corporation -727- V This Material Copyrighted By Its Respective Manufacturer , 79 5 D T-33-29 2SD799 ' < A» « H m o t-> o H J Pc - Ta (D To =Ta (INFINITE HEAT SINK) 300 X
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AC75 hFE-60 300x2 2S0799 300X2 70X70X2

8v80

Abstract: VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1M VGSS VGSM 1100V 36A 240m 300ns , nA TJ = 125°C 50 4 A mA VGS = 10V, ID = 0.5 · ID25, Note 1 240 m © 2008 IXYS , ,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771 , Temperature Fig. 3. Output Characteristics @ 125ºC 20 15 6V 10 2.4 2.2 2.0 I D = 36A 1.8
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8v80 IXFN36N110P E153432 50/60H 36N110P
Abstract: = RDS(on) trr 1100V 36A 240m 300ns miniBLOC, SOT-227 E153432 S G Either Source terminal , 3.5 6.5 ±300 50 4 240 V V nA A mA m Applications: z z z VGS = 10V, ID = 0.5 · ID25, Note 1 , ,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6 , Temperature VGS = 10V RDS(on) - Normalized 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 I D = 36A I D = 18A ID - IXYS
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IXFH36N50P

Abstract: IXFT36N50P PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P VDSS ID25 trr RDS(on) = = 500V 36A 170m 200ns , Low RDS(on) and QG Advantages z z 25 A 500 A 170 m z High Power Density Easy to Mount , ,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071 , VGS = 10V 3.0 2.6 2.2 I D = 18A 1.8 1.4 1.0 R DS(on) - Normalized I D = 36A 24 ID -
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PLUS220SMD PLUS220 36N50P 7-15-11-E
Abstract: ¸' â'¢à¸'wideband, 5 to 3000 MHz â'¢à¸'goodà¸'L-Rà¸'isolation,à¸'36à¸'dBà¸'typ. â'¢à¸'excellentà¸'L-Ià¸'isolation , ) Outline Drawing LO/RF CONVERSION LOSS* (dB) Mid-Band m IF â'" X 5-3000 5-1500 σ Max. 6.5 fL-fU .15 LO-RF ISOLATION (dB) LO-IF ISOLATION (dB) L M U L M U , D .020 0.51 E .075 1.91 F G .250 .425 6.35 10.80 M N .270 .540 6.86 13.72 P , 3030.11 7.27 7.33 7.43 7.53 7.67 30.13 30.10 30.14 30.39 32.41 51.62 48.05 46.47 43.08 Mini-Circuits
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SYM-30DLHW TTT167 2002/95/EC 30DLHW

123B16

Abstract: = 36 A = 170 m Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M Maximum Ratings 500 500 ± 30 V V V A A A mJ J , V, ID = 0.5 ID25 Pulse test, t 300 µs, duty cycle d 2 % 170 m Easy to mount Space savings , ,463 6,727,585 6,759,692 IXFH36N50P IXFT 36N50P IXFV 36N50P Fig. 1. Output Characteristics @ 25ºC , 4.5V 5V 5.5V I D = 36A -50 -25 0 25 50 75 100 125 150 V D S - Volts
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123B16 405B2
Abstract: = 36 A = 170 m Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M Maximum Ratings 500 500 ± 30 V V V A A A mJ J , V, ID = 0.5 ID25 Pulse test, t 300 µs, duty cycle d 2 % 170 m Easy to mount Space savings , ,463 6,727,585 6,759,692 IXFH36N50P IXFT 36N50P IXFV 36N50P Fig. 1. Output Characteristics @ 25ºC , 100 125 150 I D = 18A I D = 36A V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID IXYS
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DM 311 BG 29

Abstract: SUGGESTED SOLDER PAD LAYOUT 0.093â' 0.048â' 0.036â' w w w.m c c se m i.c om Revision: E 1 , 30A / MK 33A / MM 36A / MP 40A / MR 43A / MT 45A / MV 15.6 16.7 17.8 18.9 20 22.2 24.4 , 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 8.6 8.2 7.7 7.2 6.8 6.2 5.6 , 100 / NZ 110 / PE 120 / PG 130 / PK 150 / PM 160 / PP 170 / PR w w w.m c c se m i.c om , 53.3 58.1 64.5 69.4 72.7 8.6 8.2 7.7 7.2 6.8 6.2 5.6 5.1 4.8 4.4 4.1 3.8 3.4 3.1
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DM 311 BG 29 SMF170 200WATTS

36N50P

Abstract: IXFH36N50P ID25 = 500 V = 36 A = 170 m RDS(on) TO-247 AD (IXFH) (TAB) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M 500 500 V V VGS VGSM , 25 250 A A 170 m International standard packages Unclamped Inductive Switching (UIS , 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH36N50P , 2.2 1.9 I D = 36A 1.6 I D = 18A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12
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36N50PS

36n50P

Abstract: PLUS220SMD 36N50PS RDS(on) = 500 V = 36 A = 170 m TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M 500 500 VGS , µA µA 170 m G D D (TAB) S PLUS220 SMD(IXTV.S) G S G = Gate S = Source D , ,405B2 6,710,463 6,727,585 6,759,692 20 22 24 IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXT , 1.9 I D = 36A 1.6 I D = 18A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 14
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V36N50P

36p15

Abstract: IXTP36P15P - 150V - 36A 110m TO-3P (IXTQ) G S D (TAB) G D S D (TAB) G D S D (TAB , /dt ruggedness High power density Fast switching Easy to parallel ±100 nA - 10 A - 250 A 110 m , ,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 , Amperes 1.80 1.60 1.40 1.20 1.00 0.80 I D = - 36A I D = -18A -25 - 7V -20 -15 -10 -5 0 0 -1 -2 -3
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IXTP36P15P 3-26-08-B 36p15 IXTA36P15P IXTQ36P15P 36P15P

36P15

Abstract: IXTA36P15P ) G - 150V - 36A 110m TO-247 (IXTH) D (TAB) D S G Symbol Test Conditions , Choppers Automatic Test Equipment Current Regulators 110 m DS99791C(6/09) IXTA36P15P , 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7 , - 6V 1.8 I D = - 36A 1.6 I D = -18A 1.4 1.2 1.0 -10 0.8 -5 0.6 - 5V
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IXTH36P15P to-247 to-220 to-3p TO263

5BFz

Abstract: 5bgm 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103.0 113.0 121.0 126.0 , 30A 5.0SMDJ 33A 5.0SMDJ 36A 5.0SMDJ 40A 5.0SMDJ 43A 5.0SMDJ 45A 5.0SMDJ 48A 5.0SMDJ 51A 5.0SMDJ 54A , Minimu Peak Pulse Power Dissipation on 10/1000µs waveform (Note 1,2 ,FIG.1) PPPM Watts m 5000 SEE IPPM
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5BFz 5bgm 5bge 33cA 5000W

IXGR50N160H1

Abstract: Advance Technical Information High Voltage IGBT with Diode IXGR50N160H1 VCES = 1600V IC110 = 36A VCE(sat) 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1M 1600 , = 450A/s V V 2.10 TJ = 150°C V 40 m 23 27 230 400 TJ = 125°C A A ns ns , ,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463
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338B2

12V 1.2Ah battery

Abstract: DBMM ) 150A/180A(5sec) Approx. 14 m Nominal Operating Temperature Range Float Charging Voltage , ~104 ) 3 (77 5 ) 25 13.5 to 13.8 VDC/unit Average at 25 (77 3.6A ) ) 14.4 to 15.0 VDC , 7.43 7.32 7.27 7.14 6.93 6.56 2HR 4.00 3.96 3.94 3.89 3.81 3.64 3HR 2.84 2.82 2.80
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12V 1.2Ah battery DBMM UL924 UL1989 94-HB/F E50263 94-V0/F E88637
Abstract: : M a te s v .itf. CL r 3 0 T, SUV, LSOT T IE EMM M M 3 rC - r Insulator Material: Black , 3.6A 80 C 3A 3A EP OPTION Through Hole 4.8A -A T*â'™ % -EC OPTION -EL , . TIE, .125 SMM. MMS, â'™ 5L(1.91 i .075 i (1.65) CLT .065 A -EL & -EBC (4 ^ M 175 T , chart 05 thru 50 Max Proceeding T«mp: .040 = 1 5 0i Gold on past 150.1' (3.81 u m i Tin o n t = ' }â  i\ T I T (3 -
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TMMH-125-04-G-DV-EP TMMH-122-04-T-DV-LC 1-800-3AMTEC-9 85-0-F

36N50P

Abstract: IXTQ36N50P = 500 V = 36 A 170 m RDS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M 500 , mount Space savings High power density m DS99228(11/04) IXTQ 36N50P IXTT 36N50P Symbol , 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTQ 36N50P IXTT 36N50P Fig. 2 , Volts 24 20 5.5V 16 12 5V 8 4.5V 4 VGS = 10V 2.5 2.2 1.9 I D = 36A
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IXTQ36N50P
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