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LTM8029IY#PBF Linear Technology LTM8029 - 36VIN, 600mA Step-Down µModule (Power Module) Converter with 5µA Quiescent Current; Package: BGA; Pins: 35; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTM8029MPY#PBF Linear Technology LTM8029 - 36VIN, 600mA Step-Down µModule (Power Module) Converter with 5µA Quiescent Current; Package: BGA; Pins: 35; Temperature Range: -55°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LTM8029EY#PBF Linear Technology LTM8029 - 36VIN, 600mA Step-Down µModule (Power Module) Converter with 5µA Quiescent Current; Package: BGA; Pins: 35; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
7802901JA Intersil Corporation DATACOM, MANCHESTER ENCODER/DECODER, CDIP24, CERDIP-24 visit Intersil
78029013A Intersil Corporation DATACOM, MANCHESTER ENCODER/DECODER, CQCC28, CERAMIC, LCC-28 visit Intersil

LP 8029

Catalog Datasheet MFG & Type PDF Document Tags

TSSa

Abstract: intensity = ± 25° D Peak wavelength lp = 875 nm D High reliability Applications High power infrared , Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Rise Time Fall Time Fall Time 2 , VF TKVF IR Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.5 3.2 ­1.6 , ) 94 8029 e 0 Figure 1 : Power Dissipation vs. Ambient Temperature V Frel ­ Relative Forward , ( l ) rel = Fe ( l ) / Fe ( lp ) 0 ­10 0 10 50 Tamb ­ Ambient Temperature ( °C ) 94 8020
Temic Semiconductors
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telefunken tsss 2600

Abstract: tp100 sensor ° D Vertical angle of half intensity ± 60° D Peak wavelength lp = 950 nm D High reliability D Good , Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Rise , 2 lp Dl TKlp tr tr tf tf Min Typ 1.25 2.2 ­1.3 Max 1.6 100 1 30 2.6 25 , 25 0 0 0 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e 0
Temic Semiconductors
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TSSP 4400

Abstract: CQX 47 of half intensity = ± 22° D Peak wavelength lp = 950 nm D High reliability Applications High , Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Rise Time Fall Time Fall Time 2 , VF TKVF IR Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.3 2.4 ­1.3 , 50 25 0 0 0 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029
Temic Semiconductors
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LP 8029 MA

Abstract: additional polarity sign D Angle of half intensity = ± 16° D Peak wavelength lp = 950 nm D High , Bandwidth Temp. Coefficient of lp Rise Time Rise Time Fall Time Fall Time 2 Test Conditions IF = , TKVF IR V(BR) Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 ­1.3 , Ambient Temperature ( °C ) 94 8029 e 0 Figure 1 : Power Dissipation vs. Ambient Temperature 40
Temic Semiconductors
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TSus 4400

Abstract: Temic tsus ± 18° D Peak wavelength lp = 950 nm D High reliability D Good spectral matching to Si , . Coefficient of lp Rise Time Rise Time Fall Time Fall Time 2 Test Conditions IF = 100 mA, tp = 20 ms , Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 ­1.3 5 40 30 15 , 8029 e 0 Figure 1 : Power Dissipation vs. Ambient Temperature 40 60 80 100 Figure
Temic Semiconductors
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BPW16N

Abstract: CQY36N ° 94 8638 Peak wavelength lp = 950 nm Good spectral matching to Si photodetectors Applications , Typ 1.3 5 50 1.5 5 ­0.8 ±55 950 50 400 450 0.7 TKfe lp Dl x10ms x10ms , ( mW ) 250 200 150 RthJA 100 50 100 75 RthJA 50 25 0 0 0 94 8029 e
Temic Semiconductors
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Abstract: Typical Characteristics (Tamb = 25°C unless otherwise specified) 94 8029 e Tamb - A m b ien t Tem , ) lp - F orw ard C u rren t ( r a A ) Figure 3. Forward Current vs. Forward Voltage Figure 6 , . Ambient Temperature Figure 7. Rei. Radiant Intensity\Power vs. Ambient Temperature 900 ' lp - F -
OCR Scan

LP 8029

Abstract: telefunken diodes SI 61 L intensity = ± 20° D Peak wavelength lp = 875 nm D High reliability D Good spectral matching to Si , . Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise , mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Symbol VF VF TKVF IR Cj TKfe lp Dl , Tamb ­ Ambient Temperature ( °C ) 94 8029 e 0 Figure 1 : Power Dissipation vs. Ambient , Power 1.25 1.0 0.75 0.5 0.25 IF = 100 mA Fe ( l ) rel = Fe ( l ) / Fe ( lp ) 0 780 94
Temic Semiconductors
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LP 8029

Abstract: DIN 7990 = ± 12° 94 8639 D Peak wavelength lp = 950 nm D Good spectral matching to Si photodetectors , =1.5A, tp/T=0.01, tpx10ms IF=1.5A, tp/T=0.01, tpx10ms Symbol VF V(BR) Cj Ie fe TKfe lp Dl tr , 25 0 0 0 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e 0
Temic Semiconductors
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TSMF3700

Abstract: half intensity = ± 60° Peak wavelength lp = 870 nm High reliability Applications Infrared source , Bandwidth Temp. Coefficient of lp Rise Time Fall Time www.vishay.com 2 (6) Test Conditions IF = , IF = 100 mA IF = 100 mA IF = 100 mA Symbol VF VF TKVF IR Cj Ie Ie fe TKfe lp , 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e 0 Figure 1. Power
Vishay Telefunken
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TEST2600

Abstract: TSSS2600 intensity ± 25° 94 8672 Vertical angle of half intensity ± 60° Peak wavelength lp = 950 nm High , Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Symbol VF VF TKVF IR Cj Ie Ie , 400 800 400 1 fe TKfe 1 2 lp Dl TKlp tr tr tf tf Unit V V mV/K mA pF , 200 150 RthJA 100 50 100 75 RthJA 50 25 0 0 0 94 8029 e 20 40 60
Vishay Telefunken
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TEMT3700

Abstract: TSMS3700 Wide angle of half intensity = ± 60° Peak wavelength lp = 950 nm High reliability Matching to , Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test , +1-408-970-5600 2 (6) Symbol VF VF TKVF IR Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf , ) 94 8029 e 101 100 0 V Frel ­ Relative Forward Voltage 75 RthJA 50 25 0 1.1 IF
Vishay Telefunken
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TSIP4400

Abstract: TSIP 4400 Angle of half intensity = ± 20° D Peak wavelength lp = 950 nm D High reliability D Good spectral , . Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise , mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Symbol VF VF TKVF IR Cj TKfe lp Dl , 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e 0 Figure 1 : Power
Temic Semiconductors
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TEMT3700

Abstract: TSML3700 = ± 60° D Peak wavelength lp = 950 nm D High reliability D Matching to TEMT3700 phototransistor , . Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise , Symbol VF VF TKVF IR Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 , 8029 e 0 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 7916 e Figure 2
Temic Semiconductors
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TSML3700 88/540/EEC 91/690/EEC D-74025
Abstract: wavelength lp = 870 nm High reliability 94 8553 Applications Infrared source in tactile keyboards IR , Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = , Max 1.7 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns 10 fe TKlp tr tf lp Dl , 101 100 0 94 7952 e 1 2 3 4 94 8029 e Tamb ­ Ambient Temperature ( °C ) VF ­ Vishay Telefunken
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TSMF3700

BPW17N

Abstract: CQY37N Peak wavelength lp = 950 nm Good spectral matching to Si photodetectors Applications Radiation , Typ 1.3 5 50 5 5 ­0.8 ±12 950 50 400 450 2.2 TKfe lp Dl x10ms x10ms , ( mW ) 250 200 150 RthJA 100 50 100 75 RthJA 50 25 0 0 0 94 8029 e
Temic Semiconductors
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CQY37N BPW17N BPW17

TSUS4300

Abstract: ° 94 8636 Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors , Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = , 800 400 800 400 7 fe TKfe lp Dl IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 , 200 150 RthJA 100 50 100 75 RthJA 50 25 0 0 0 94 8029 e 20 40 60
Vishay Semiconductors
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TSUS4300

TEMT3700

Abstract: TSML3700 = ± 60° Peak wavelength lp = 925 nm High reliability Matching to TEMT3700 phototransistor , . Coefficient of lp Rise Time Fall Time www.vishay.com 2 (6) Test Conditions IF = 100 mA, tp = 20 ms , lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 ­1.3 Max 1.7 100 2.5 20 7 60 32 , 101 100 0 0 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e
Vishay Telefunken
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Vishay Telefunken Phototransistor

Abstract: TEMT3700 = ± 60° Peak wavelength lp = 925 nm High reliability Matching to TEMT3700 phototransistor , . Coefficient of lp Rise Time Fall Time www.vishay.com 2 (6) Test Conditions IF = 100 mA, tp = 20 ms , lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 ­1.3 Max 1.7 100 2.5 20 7 60 32 , 101 100 0 0 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e
Vishay Telefunken
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Vishay Telefunken Phototransistor

Vishay Telefunken Phototransistor

Abstract: TEMT3700 operation Wide angle of half intensity = ± 60° Peak wavelength lp = 950 nm High reliability Matching to , Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time www.vishay.com 2 (6 , TKVF IR Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.3 1.8 ­1.3 , 50 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e 101 100 0
Vishay Telefunken
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TSMS3700
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