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LT1009M2 Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other visit Linear Technology - Now Part of Analog Devices
LT1034-1.2#TR Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other visit Linear Technology - Now Part of Analog Devices
LT1034-2.5#TR Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other visit Linear Technology - Now Part of Analog Devices
LT1004-1.2#TR Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other visit Linear Technology - Now Part of Analog Devices
LT1034-1.2 Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other visit Linear Technology - Now Part of Analog Devices
LTC202 Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other visit Linear Technology - Now Part of Analog Devices

LNA CIRCUIT

Catalog Datasheet MFG & Type PDF Document Tags

what is technical report

Abstract: TR17-1 : BGB707L7ESD Application: BGB707L7ESD LNA Circuit with low-Q Inductors for 3.3GHz3.8GHz WiMAX Applications , Technical Report TR171 BGB707L7ESD LNA Circuit with low-Q Inductors for 3.3GHz-3.8GHz WiMAX Applications , Report TR171 BGB707L7ESD LNA Circuit with low-Q Inductors for 3.3GHz-3.8GHz WiMAX Applications 4 , . December 2009 Technical Report TR171 BGB707L7ESD LNA Circuit with low-Q Inductors for 3.3GHz-3.8GHz , / 12 16. December 2009 Technical Report TR171 BGB707L7ESD LNA Circuit with low-Q Inductors for
Infineon Technologies
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what is technical report TR17-1 marking swp 9 BGB707L BGB707L7

RF LNA 10 GHz

Abstract: SDMB may be endangered. Technical Report TR170 BGB707L7ESD LNA Circuit with low-Q Inductors for , . 1.0 3 / 12 14. December 2009 Technical Report TR170 BGB707L7ESD LNA Circuit with low-Q , Application: BGB707L7ESD LNA Circuit with low-Q Inductors for 2.3GHz2.7GHz WLAN/WiMAX/SDMB Applications PCB , losses of 0.1dB - 4 / 12 14. December 2009 Technical Report TR170 BGB707L7ESD LNA Circuit , Technical Report TR170 BGB707L7ESD LNA Circuit with low-Q Inductors for 2.3GHz-2.7GHz WLAN/WiMAX/SDMB
Infineon Technologies
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RF LNA 10 GHz SDMB

"BJT Transistors"

Abstract: Granberg additional obtainable gain from the LNA circuit. LNA linearity is another important CDMA LNA parameter. A , . DC biasing. DC biasing represents the first step in LNA design. The chosen DC bias circuit should , Vbe Ve Ce Re Figure 4. Typical LNA biasing circuit. Two bias feedback arrangements are , should be the next step in LNA design. Unconditional stability of the circuit is the goal of the LNA , by the manufacturer of the transistor will aid in stability analysis of the LNA circuit. Two main
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Granberg Granberg dye BFG425 High IP3 Low-Noise Amplifier BFG425W 900MH

amplifier rf 18dbm gain 18db

Abstract: BFG425 Complete circuit characterization The LNA design will be carried out with a discrete, 5th generation , power gain (Gmax) are good indicators of additional obtainable gain from the LNA circuit. LNA , . Isup Rsup Ib Vc Rb Vb T Vce Vbe Ve Ce Re Figure 4. Typical LNA biasing circuit , stability of the circuit is the goal of the LNA designer. Unconditional stability means that with any load , analysis of the LNA circuit. Two main methods exist in S-parameter stability analysis: numerical and
Philips Semiconductors
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amplifier rf 18dbm gain 18db BFG425 spice parameters BJT IC Vce BFG425 Power amplifier

BFG403W

Abstract: 0805CS Series , gain S21 ~16dB. Appendix I: 900MHz LNA circuit Appendix II: Printlayout and list of used components , Figure 1: LNA circuit 900MHz LNA Component list: 900MHz LNA Component list: Component Value Purpose , example of a Low Noise Amplifier with the new BFG403W Double Poly RF-transistor. The LNA is designed for , of 900MHz. Because this LNA has an extreme low power-consumption, it is well suited for pager front-end applications. Designing the circuit: The circuit is designed to show the following
Philips Semiconductors
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0805CS 0805CS Series amplifier 900mhz 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W RNR-T45-97-B-006 BFG400W

AN1676

Abstract: MRF1057 DESCRIPTION This Application Note describes the performance of a cascade LNA circuit using the Motorola , measured data and general information on the LNA circuit are provided. Design goals for the LNA are based , LNA circuit relied on use of the MRF1047T1 Spice Gummel­Poon model, which includes the packages , CIRCUIT DESIGN This two stage cascade LNA design uses both transistors in the common emitter , L4* R3 C2 RF Out 900 MHz LNA Figure 6 shows the printed circuit board layout and parts
Motorola
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AN1676 MDC5001 MRF1057 MRF1027 motorola rf spice MRF1027T1 AN1676/D

2n2222+spice+model

Abstract: Figure 1: LNA circuit 400MHz LNA Component list: 400MHz LNA Component list: Component Value Purpose , example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The LNA is designed for a frequency f , , Input_IP3~2dBm Applications: LNA for a 400MHz CDMA system (Chinese market). Appendix I: 400MHz LNA circuit Appendix II: Printlayout and list of used components & materials Appendix III: Results of , designed for a working frequency of 400MHz. Designing the circuit: The circuit is designed to show the
Philips Semiconductors
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2n2222+spice+model RNR-T45-97-B-0920 400MH

MRF1057T1

Abstract: AN1675 DESIGN The LNA circuit is designed using the MRF1057T1 Spice Gummel­Poon model, which includes the , ) 900 ­17 11.9 ­25 1.35 23.4 CONCLUSION This high performance LNA circuit was designed using the Motorola MRF1057T1 device. The LNA circuit demonstrated the performance of the , Application Note describes the performance of the Motorola MRF1057T1 low noise bipolar transistor in a LNA circuit. The Motorola MRF1057T1 is a low noise bipolar junction transistor, which, along with the
Motorola
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AN1675 0/MRF1057 2.5 ghz lna transistor RK73H2A AN1675/D

motorola rf spice

Abstract: J2/MRF1057TI Motorola MRF1057T1 low noise bipolar transistor in a LNA circuit. The Motorola MRF1057T1 is a low noise , impedance match easier and simpler. CIRCUIT DESIGN The LNA circuit is designed using the MRF1057T1 , circuit, demonstrating the accuracy and reliability of the MRF1057T1 model. LNA PERFORMANCE This LNA , CONCLUSION This high performance LNA circuit was designed using the Motorola MRF1057T1 device. The LNA , on the data sheet. Figure 1. LNA Using the MRF1057TI + C4 1.0 µF VCC 3.7 V R2 22.1
Freescale Semiconductor
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J2/MRF1057TI dbm-166 mixer

mrf1057

Abstract: MOTOROLA small signal transistors Application Note describes the performance of a cascade LNA circuit using the Motorola MRF1047T1 low noise , information on the LNA circuit are provided. Design goals for the LNA are based on the requirements for a , into the design for improved stabilization over temperature. Design of the cascade LNA circuit relied , of the MRF1047T1 in a cascade LNA design for a pager application. The circuit provides a good , * 900 MHz LNA Figure 6 shows the printed circuit board layout and parts placement for the first stage
Motorola
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MOTOROLA small signal transistors Application Note Motorola

microwave limiter

Abstract: MMIC limiter limiter/LNA circuit shows gain greater than 19 dB, noise floor (NF) , CW Broadband iter/LNA circuit provides a best value References 1 I. J. Bahl, et al., "Multifunction , April 2003 New Technology Advance in Integrated High Power Limiter/LNA Performance by Inder J , Figure 1: Balanced Three Stage LNA with Limiter can only sustain low-input power levels ranging from 10dBm to novel high power limiter/LNA which · Balanced configuration, built-in couplers 20 dBm CW or 1
M/A-COM
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MTT-38 microwave limiter MMIC limiter microwave chip limiter LNA at microwave range mmic A microwave receiver

Philips npo 0805

Abstract: 5Ghz lna transistor datasheet : 1.5GHz LNA circuit Appendix II: Printlayout and list of used components & materials Appendix III , D1 L3 W2 Figure 1: LNA circuit 1.5GHz LNA Component list: 1.5GHz LNA Component list , example of a Low Noise Amplifier with the new BFG425W Double Poly RF-transistor. The LNA is designed for , . Designing the circuit: The circuit is designed to show the following performance (target): transistor , RF-models of al used parts) and measurements of the total circuit (epoxy PCB) are done (Appendix III). 2
Philips Semiconductors
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CMP409 CMP250 Philips npo 0805 5Ghz lna transistor datasheet CMP230 CMP231 CMP263 CMP264 RNR-T45-97-B-0584 CMP408 CMP358 CMP394 CMP197 CMP18

MRF1057T1

Abstract: RK73H2A describes the performance of a cascade LNA circuit using the Motorola MRF1047T1 low noise bipolar , on the LNA circuit are provided. Design goals for the LNA are based on the requirements for a , design for improved stabilization over temperature. Design of the cascade LNA circuit relied on use of , of the MRF1047T1 in a cascade LNA design for a pager application. The circuit provides a good , high IP3 qualities. " CIRCUIT DESIGN This two stage cascade LNA design uses both transistors in
Freescale Semiconductor
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L05 SMD

Abstract: SMD W05 : 900MHz LNA circuit Appendix II: Printlayout and list of used components & materials Appendix III , circuit 900MHz LNA Component list: Component: Value: Comment: R1 R2 R3 R4 R5 C1 C2 C3 C4 , example of a Low Noise Amplifier with the new BFG410W Double Poly RF-transistor. The LNA is designed for , 900MHz. Designing the circuit: The circuit is designed to show the following performance: transistor , situation the NF is ~0.1dB higher. This LNA is not optimised for the highest IP3. The IP3 can be optimised
Philips Semiconductors
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RNR-T45-96-B-770 CMP401 CMP281 L05 SMD SMD W05 w05 smd transistor W05 transistor L6 PHILIPS CMP350 CMP351 CMP438 CMP227 CMP252

Philips X7R

Abstract: B 0920 Figure 1: LNA circuit 400MHz LNA Component list: 400MHz LNA Component list: Component Value Purpose , example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The LNA is designed for a frequency f , , Input_IP3~2dBm Applications: LNA for a 400MHz CDMA system (Chinese market). Appendix I: 400MHz LNA circuit Appendix II: Printlayout and list of used components & materials Appendix III: Results of , amplifier is designed for a working frequency of 400MHz. Designing the circuit: The circuit is designed
Philips Semiconductors
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Philips X7R B 0920 SOT343 C5 B0920 transistor model list TRANSISTOR noise figure measurements

dbm-166 mixer

Abstract: AN1675 the performance of the Motorola MRF1057T1 low noise bipolar transistor in a LNA circuit. The , resistance, which makes the impedance match easier and simpler. CIRCUIT DESIGN The LNA circuit is , ­17 11.9 ­25 1.35 23.4 CONCLUSION This high performance LNA circuit was designed using the Motorola MRF1057T1 device. The LNA circuit demonstrated the performance of the MRF1057T1 for an , ­70. Model details are given on the data sheet. Figure 1. LNA Using the MRF1057TI + C4 1.0 µF R2
Motorola
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L05 SMD

Abstract: CMP266 =+3dBm. Appendix I: 900MHz LNA circuit Appendix II: Printlayout and list of used components & materials Appendix , circuit 900MHz LNA Component list: 900MHz LNA Component list: Component Value Purpose, comment R1 , new BFG425W Double Poly RF-transistor. The LNA is designed for a frequency f=900MHz, VSUP~3.8V, ISUP , . Designing the circuit: The circuit is designed to show the following performance: transistor: BFG425W V , practical situation the NF is ~0.1dB higher. This LNA is also optimised for the highest IP3. The IP3 can be
Philips Semiconductors
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RNR-T45-96-B-1025 CMP417 CMP418 CMP265 CMP266 transistor smd Sb1 L05 transistor w2 smd transistor RNR-T45-96-B-771 CMP403 CMP270 CMP180 CMP210

HK1005

Abstract: NJG1129MD7 typ. -4.0dB typ. +20.0dBm typ. (Top View) 11 10 9 8 Bypass circuit 12 7 LNA circuit 13 6 Bias circuit Logic circuit 14 1 2 5 3 1. GND 2. GND 3. VINV , RF OUT L4 15nH LNA circuit VDD 13 Logic circuit 14 VCTL 6 Bias circuit , NJG1129MD7 LNA GaAs MMIC NJG1129MD7 (LNA)LNA High Gain LNA Low Gain ESD ESD , . GND 14. VCTL 4 "H"=VCTL(H), "L"=VCTL(L) VCTL LNA Mode H High Gain mode L
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HK1005 LNA CIRCUIT EQFN14-D7P LQP03T GRM03 EQFN14-D7
Abstract: Single Stage LNA Circuit Specifications subject to change without notice. 9000-1416 6-9 , AL P H A IN»/ S E M I C O N D U C T O R 33E D â  OSfiSMHB Q D 0 1 0 2 1 D â  ALP Ka-Band AA035L1-00 Monolithic LNA Features Description â  â  â  â  â  Alphaâ'™s AA035L1-00 is a Ka-band monolithic LNA chip that features an 0.25 x 200 micron MBE grown MESFET device. The gates are E-beam written directly on the wafer to achieve the highest uniformity and reliability -
OCR Scan

NJG1148MD7

Abstract: ) 2 RFIN 10 LNA circuit RFOUT 3 GND 9 Logic circuit VDD 4 NC(GND) 8 5 GND 6 , "H"=VCTL(H)"L"=VCTL(L) LNA Circuit Bypass Circuit ON OFF OFF ON Operating mode LNA mode Bypass mode , CHARACTERISTICS (LNA mode) Conditions: VDD=3.3V, VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit Pout , CHARACTERISTICS (LNA mode) Conditions: VDD=3.3V, VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit S11 , (LNA mode) Conditions: VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit IDD vs. VDD 14 (RF
New Japan Radio
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NJG1148MD7 ESON14-D7
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