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1 - 50 of about 174 for LM386 |
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First line: dimensions millimeters inches DIA. DIA. DO-8 Case Style 3 / 8-24UNF-2A ACROSS FLATS METRIC Abstract: .. 45L R , 150K/ L/ KS R Series. Outline Table. All dimensions in millimeters inches 45L. Case Style. DO-8. Case Style. 21.47 0.843 21.20 0.835 1/2"-20UNF-2A. DIA. 7.39 0.291 6.89 0.271 15 .. datasheet abstract.. |
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First line: Document WSI-1015 April Subject Life Notification Select Memory Devices Dear Customer very Abstract: .. WS57C128F-45J WS57C256F-35P WS57C49C-35L WS57C51C-35D WS57C128F-45L WS57C256F-45P WS57C49C-55FMB WS57C51C-45CMB WS57C128FB-55CMB WS57C256F-55L WS57C51C-45D. WS57C51C-45DMB WS57C51C .. datasheet abstract.. |
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First line: Bulletin I2037 rev. SERIES 45L R 150K / KS R STANDARD RECOVERY DIODES Stud Version Abstract: .. Parameters 45L /150K Units. case style DO-205AA DO-8 1. 150A. STANDARD RECOVERY DIODES Stud Version. SERIES. 45L R , 150K/ KS R Bulletin I2037 rev. B 03/03. www.irf.com. 45L R , 150K/ KS R Series .. datasheet abstract.. |
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First line: Bulletin I2037 rev. SERIES 45L R 150K / KS R STANDARD RECOVERY DIODES Stud Version Abstract: .. Parameters 45L /150K Units. case style DO-205AA DO-8 150A. STANDARD RECOVERY DIODES Stud Version. SERIES. 45L R , 150K/ KS R Bulletin I2037 rev. C 10/06. Document Number: 93489. www.vishay.com .. datasheet abstract.. |
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First line: CSHD10-45L SURFACE MOUNT POWER SCHOTTKY SILICON RECTIFIER AMPS VOLTS Central Semiconductor Corp. Abstract: .. CSHD10-45L. SURFACE MOUNT POWER SCHOTTKY SILICON RECTIFIER 10 AMPS, 45 VOLTS. DPAK RECTIFIER CASE. CentralSemiconductor Corp. TM. R5 30-September 2005 DESCRIPTION: The CENTRAL SEMICONDUCTOR .. datasheet abstract.. |
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First line: Bulletin I2030 rev. 45L R ..D SERIES STANDARD RECOVERY DIODES Stud Version Features Diffused Abstract: .. 45L R ..D Series. 2 www.irf.com. Bulletin I2030 rev. A 11/94. ELECTRICAL SPECIFICATIONS .. 45L R ..D 40. Forward Conduction. IF AV Max. average forward current 150 A 180° conduction .. datasheet abstract.. |
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First line: Previous Datasheet Index Next Data Sheet Bulletin I2030 / A 45L R ..D SERIES STANDARD RECOVERY Abstract: .. 45L R ..D Series. ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VRRM , maximum repetitive VRSM , maximum non- IRRM max. Type number Code peak reverse voltage repetitive peak rev. voltage .. datasheet abstract.. |
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First line: Bulletin I2037 SERIES 45L R 150K / KS R STANDARD RECOVERY DIODES Stud Version Features Abstract: .. 45L R , 150K /L /KS R Bulletin I2037 11/94. www.irf.com. Features. Alloy diode High current carrying capability. High voltage ratings up to 1000V High surge current capabilities. Stud cathode .. datasheet abstract.. |
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First line: Bulletin I2037 SERIES 45L R 150K / KS R STANDARD RECOVERY DIODES Stud Version Features Abstract: .. 45L R , 150K /L /KS R Bulletin I2037. Features Alloy diode High current carrying capability High voltage ratings up to 1000V High surge current capabilities Stud cathode and stud anode version .. datasheet abstract.. |
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First line: Previous Datasheet Index Next Data Sheet Bulletin I2037 SERIES 45L R 150K / KS R Abstract: .. 45L R , 150K /L /KS R Bulletin I2037. Features Alloy diode High current carrying capability High voltage ratings up to 1000V High surge current capabilities Stud cathode and stud anode version .. datasheet abstract.. |
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First line: 45L R 150K R 150KS R Series Vishay High Power Products Standard Recovery Diodes Stud Abstract: .. 45L R , 150K R , 150KS R Series Vishay High Power Products. FEATURES. • Alloy diode. High current carrying capability. High surge current capabilities. Stud cathode and stud anode version. RoHS .. datasheet abstract.. |
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First line: Abstract: .. D1 EF:GHIJK : 45L 467689:; D: MNOPQ+ : R1 I 9R Q+ STQ+ R1 I 9R Q+ L 45 467689:; L D1U VWK <X VW. 45 467689:; YZ R4 [\2 ] ^ 45 467689:; ^ ] STK _‘ab. 45 467689:; cR de. !"# $%&’ * Mfg BC 4:9hiR1 j R1h iD: h .. datasheet abstract.. |
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First line: CSHD10-45L Central DESCRIPTION Semiconductor Corp. POWER SCHOTTKY RECTIFIER AMPS VOLTS DPAK DPAK Abstract: .. CSHD10-45L. POWER SCHOTTKY RECTIFIER 10 AMPS, 45 VOLTS DESCRIPTION: T h e C E N T R A L S E M I C O N D U C T O R CSHD10-45L is a Silicon Power Schottky Rectifier designed for surface mount power applications .. datasheet abstract.. |
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First line: SD700C L Series STANDARD RECOVERY DIODE IF AV Case B-Puk MAXIMUM RATINGS Parameter unless Abstract: .. SD700C 45L. 2.30 58.5 Dia. 0.14 3.50 Dia x 0.07 1.8 Deep. 1.34 34.0 0.03 0.8 1.34 34.0 1 .. datasheet abstract.. |
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First line: SRAM Austin Semiconductor Inc. 512K SRAM SRAM MEMORY ARRAY AVAILABLE MILITARY SPECIFICATION Abstract: .. EXAMPLE: AS5C4008F-45L/883C EXAMPLE: AS5C4008EC-20/883C. EXAMPLE: AS5C4008ECA-45/883C. SRAM AS5C4008. Austin Semiconductor, Inc.. AS5C4008 Rev. 5.5 12/01. Austin Semiconductor, Inc. reserves .. datasheet abstract.. |
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First line: SUD25N06-45L N-Channel Enhancement-Mode MOSFETs Logic Level Product Summary rDS on TO-252 Drain Connected Abstract: .. SUD25N06-45L. Siliconix S-47960—Rev. C, 21-May-96. 1. N-Channel Enhancement-Mode MOSFETs, Logic Level. Product Summary. VDS V rDS on ID A 60. 0.035 @ VGS = 10 V 25. 60. 0.045 @ VGS = 4.5 V 22. TO-252 .. datasheet abstract.. |
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First line: SUD25N06-45L Vishay Siliconix N-Channel 60-V D-S 175C MOSFET Logic Level PRODUCT SUMMARY Abstract: .. SUD25N06-45L Vishay Siliconix. Document Number: 70274 S-57253—Rev. E, 24-Feb-98. www.vishay.com FaxBack 408-970-5600 2-1. N-Channel 60-V D-S , 175C MOSFET, Logic Level. VDS V rDS on ID .. datasheet abstract.. |
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First line: SUD25N06-45L N-Channel Enhancement-Mode MOSFET Logic Level Product Summary rDS on TO-252 Drain Connected Abstract: .. SUD25N06-45L. Siliconix S-54694—Rev. D, 15-Sep-97. 1. N-Channel Enhancement-Mode MOSFET, Logic Level. Product Summary. VDS V rDS on ID A 60. 0.035 @ VGS = 10 V 25. 60. 0.045 @ VGS = 4.5 V 22. TO-252 .. datasheet abstract.. |
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First line: SPICE Device Model SUD25N06-45L Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET Logic Abstract: .. SPICE Device Model SUD25N06-45L Vishay Siliconix. This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the .. datasheet abstract.. |
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First line: SD800C L Series STANDARD RECOVERY DIODE IF AV Case B-Puk MAXIMUM RATINGS Parameter unless Abstract: .. SD800C 45L. Maximum Forward Voltage VFM Ipk = 2000 Amps 4000-4500V 1.95 Volt. 2.30 58.5 Dia. 0.14 3.50 Dia x 0.07 1.8 Deep. 1.34 34.0 0.03 0.8 1.34 34.0 1.06 26.9 Max 1.0 25.4 Min. All Dimensions .. datasheet abstract.. |
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First line: dimensions millimeters inches Case Style B-42 DIA. DIA. 3 / 8-24UNF-2A MIN. BREAK DIA. Abstract: .. 45L R , 150K/ L/ KS R Series Ordering Information Table. 152K-A. IR Case Style B-28. Case Style B-42. All dimensions in millimeters inches 7.88 0.310 7.36 0.290 21.47 0.843 21.20 0.835 .. datasheet abstract.. |
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First line: CEN1082 POWER SCHOTTKY RECTIFIER AMPS VOLTS Central Semiconductor Corp. DESCRIPTION CENTRAL SEMICONDUCTOR Abstract: .. is a custom selected version of the CSHD10-45L Power Schottky Rectifier for customer PIPAL SYSTEMS INC.. MARKING CODE: CSHD1045. MAXIMUM RATINGS: TC=25°C unless otherwise noted SYMBOL UNITS .. datasheet abstract.. |
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First line: dimensions millimeters inches 152K-A Case Style B-28 MAX. DIA. 150KS Case Style Abstract: .. 45L R , 150K/ L/ KS R Series Ordering Information Table. 152K-A. IR Case Style B-28. 150KS. Case Style B-42. All dimensions in millimeters inches 7.88 0.310 7.36 0.290 21.47 0.843 21.20 .. datasheet abstract.. |
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First line: SMD / SMU25N05-45L N-Channel Enhancement-Mode Transistors Logic Level Product Summary rDS on Drain Connected Channel Abstract: .. SMD/SMU25N05-45L. Siliconix P-37394—Rev. E, 20-Jun-94. 1. N-Channel Enhancement-Mode Transistors, Logic Level. Product Summary VDS V rDS on IDa A 50 0.045 25. # # ! ! " $ " $ $ Absolute Maximum .. datasheet abstract.. |
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First line: SMD / SMU25N05-45L N-Channel Enhancement-Mode Transistors Logic Level Product Summary rDS on Drain Connected Channel Abstract: .. SMD/SMU25N05-45L. Siliconix P-37394—Rev. E, 20-Jun-94. 1. N-Channel Enhancement-Mode Transistors, Logic Level. Product Summary VDS V rDS on IDa A 50 0.045 25. # # ! ! " $ " $ $ Absolute Maximum .. datasheet abstract.. |
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First line: SUD25N06-45L Vishay Siliconix N-Channel 60-V D-S 175C MOSFET Logic Level PRODUCT SUMMARY Abstract: .. SUD25N06-45L Vishay Siliconix. Document Number: 70274 S-57253—Rev. E, 24-Feb-98. www.vishay.com FaxBack 408-970-5600 2-1. N-Channel 60-V D-S , 175C MOSFET, Logic Level. VDS V rDS on ID .. datasheet abstract.. |
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First line: SUD25N06-45L Siliconix N-Channel 60-V D-S 175C MOSFET Logic Level Product Summary rDS on Abstract: .. SUD25N06-45L Siliconix. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone 408 988-8000 FaxBack 408 970-5600 www.siliconix.com S-57253—Rev. E, 24-Feb-98 Siliconix .. datasheet abstract.. |
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First line: SRAM Austin Semiconductor Inc. 512K SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT Abstract: .. AS5C512K8EC-45/883C 5962-9560009MNA AS5C512K8EC-45L/883C 5962-9560005MNA AS5C512K8EC-35/883C 5962-9560010MNA AS5C512K8EC-35L/883C 5962-9560006MNA AS5C512K8EC-25/883C 5962 .. datasheet abstract.. |
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First line: SPICE Device Model SUD25N06-45L Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET Logic Abstract: .. SPICE Device Model SUD25N06-45L. Vishay Siliconix. This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the .. datasheet abstract.. |
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First line: European PowerSemiconductor Electronics Company GmbH Marketing Information 10..16..R ECONO max. 9-12 Sep. Abstract: .. TA = 35°C, KP 0,41 S VL = 45l/s 104 A. TA = 35°C, KP 0,33 S VL = 90l/s 104 A. Stoßstrom-Grenzwert Tvj = 25°C, tp = 10ms IFSM 650 A. surge forward current Tvj = Tvj max, tp = 10ms 550 A. Grenzlastintegral Tvj .. datasheet abstract.. |
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First line: Abstract: .. 围水,2.5--1600ml/min空气, 1.013X105Pa,20°C ,0.03--45L/min精确度等级精确度等级精确度等级精确度等级4、6 2.5、4 1.5 2.5 介质温度介质 .. datasheet abstract.. |
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First line: SRAM Austin Semiconductor Inc. 128K SRAM WITH CHIP OUTPUT ENABLE AVAILABLE MILITARY Abstract: .. EXAMPLE: MT5C1009C-25/XT EXAMPLE: MT5C1009EC-45L/IT. SRAM MT5C1009. Austin Semiconductor, Inc.. MT5C1009 Rev. 5.5 8/01. Austin Semiconductor, Inc. reserves the right to change products or .. datasheet abstract.. |
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First line: Aluminum Electrolytic Capacitors / Snap-in Type Series Type Country Origin Japan U.S.A Malaysia Abstract: .. Endurance : 105°C 7000h Terminal Pitch : 10mm When capacitors of φ35× 45L and φ35× 50L are mounted on PWB, reinforce them with mounting clamp or adhesives. Avoid using adhesives including halogenated .. datasheet abstract.. |
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First line: Aluminum Electrolytic Capacitors / Snap-in Type Series Features Type Country Origin Endurance 105°C Abstract: .. Endurance : 105∞C 2000 h, Terminal Pitch : 10mm When capacitors of f35·45L and f35·50L are mounted on PWB, reinforce them with mounting clamp or adhesives. Avoid using adhesives including halogenated .. datasheet abstract.. |
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First line: SRAM Austin Semiconductor Inc. 128K SRAM WITH DUAL CHIP ENABLE AVAILABLE MILITARY Abstract: .. MT5C1008EC-45L/883C 5962-8959818MUA. MT5C1008EC-55/883C 5962-8959834MUA. MT5C1008EC-55L/883C 5962-8959817MUA. MT5C1008EC-70/883C 5962-8959833MUA. MT5C1008EC-70L/883C 5962-8959816MUA .. datasheet abstract.. |
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First line: SRAM Austin Semiconductor Inc. 128K SRAM WITH DUAL CHIP ENABLE AVAILABLE MILITARY Abstract: .. MT5C1008EC-45L/883C 5962-8959818MUA. MT5C1008EC-55/883C 5962-8959834MUA. MT5C1008EC-55L/883C 5962-8959817MUA. MT5C1008EC-70/883C 5962-8959833MUA. MT5C1008EC-70L/883C 5962-8959816MUA .. datasheet abstract.. |
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First line: SRAM Austin Semiconductor Inc. 128K SRAM WITH DUAL CHIP ENABLE AVAILABLE MILITARY Abstract: .. MT5C1008EC-45L/883C 5962-8959818MUA. MT5C1008EC-55/883C 5962-8959834MUA. MT5C1008EC-55L/883C 5962-8959817MUA. MT5C1008EC-70/883C 5962-8959833MUA. MT5C1008EC-70L/883C 5962-8959816MUA .. datasheet abstract.. |
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First line: SRAM Austin Semiconductor Inc. 512K SRAM SRAM MEMORY ARRAY AVAILABLE MILITARY SPECIFICATION Abstract: .. EXAMPLE: AS5C4008F-45L/883C EXAMPLE: AS5C4008EC-20/883C. EXAMPLE: AS5C4008ECA-45/883C. SRAM SRAM SRAM SRAM SRAM AS5C4008. AS5C4008 Rev. 6.2 06/05. Austin Semiconductor, Inc. reserves the .. datasheet abstract.. |
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First line: Aluminium Electrolytic Capacitors / HB Aluminium Electrolytic Capacitors Type Snap-in Series Series Type Japan Abstract: .. High temperature Load Life test : 105ßC 2000h Terminal Pitch : 10mm When capacitors of f35×45L and f35×50L are mounted on PWB, reinforce them with mounting clamp or adhesives. Avoid using adhesives .. datasheet abstract.. |
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First line: Aluminum Electrolytic Capacitors / Snap-in Type Series Type Country Origin Japan U.S.A Malaysia Abstract: .. Endurance : 105°C 2000h Terminal Pitch : 10mm When capacitors of φ35× 45L and φ35× 50L are mounted on PWB, reinforce them with mounting clamp or adhesives. Avoid using adhesives including halogenated .. datasheet abstract.. |
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First line: Aluminum Electrolytic Capacitors / HC Snap-in Type Series Features Type Japan Endurance 105°C smaller Abstract: .. Endurance : 105°C 2000 h, Terminal Pitch : 10mm When capacitors of f35〈45L and f35〈50L are mounted on PWB, reinforce them with mounting clamp or adhesives. Avoid using adhesives including halogenated .. datasheet abstract.. |
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First line: European PowerSemiconductor Electronics Company GmbH Marketing Information ECONO max. 9-12 Sep. Elektrische Abstract: .. TA = 35°C, KP 0,41 S VL = 45l/s 104 A. TA = 35°C, KP 0,33 S VL = 90l/s 104 A. Stoßstrom-Grenzwert Tvj = 25°C, tp = 10ms IFSM 650 A. surge forward current Tvj = Tvj max, tp = 10ms 550 A. Grenzlastintegral Tvj .. datasheet abstract.. |
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First line: European PowerSemiconductor Electronics Company GmbH Marketing Information 10..16..R ECONO max. 9-12 Sep. Abstract: .. TA = 35°C, KP 0,41 S VL = 45l/s 153 A. TA = 35°C, KP 0,33 S VL = 90l/s 173 A. Stoßstrom-Grenzwert Tvj = 25°C, tp = 10ms IFSM 1200 A. surge forward current Tvj = Tvj max, tp = 10ms 1000 A. Grenzlastintegral .. datasheet abstract.. |
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First line: Aluminum Electrolytic Capacitors / Snap-in Type Series Type Country Origin Japan U.S.A Malaysia Abstract: .. Endurance : 105°C 2000h Terminal Pitch : 10mm When capacitors of φ35〈45L and φ35〈50L are mounted on PWB, reinforce them with mounting clamp or adhesives. Avoid using adhesives including halogenated .. datasheet abstract.. |
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First line: European PowerSemiconductor Electronics Company GmbH Marketing Information ECONO max. 9-12 Sep. Elektrische Abstract: .. TA = 35°C, KP 0,41 S VL = 45l/s 104 A. TA = 35°C, KP 0,33 S VL = 90l/s 104 A. Stoßstrom-Grenzwert Tvj = 25°C, tp = 10ms IFSM 650 A. surge forward current Tvj = Tvj max, tp = 10ms 550 A. Grenzlastintegral Tvj .. datasheet abstract.. |
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First line: European PowerSemiconductor Electronics Company GmbH Marketing Information 10..16..R ECONO max. 9-12 Sep. Abstract: .. TA = 35°C, KP 0,41 S VL = 45l/s 153 A. TA = 35°C, KP 0,33 S VL = 90l/s 173 A. Stoßstrom-Grenzwert Tvj = 25°C, tp = 10ms IFSM 1200 A. surge forward current Tvj = Tvj max, tp = 10ms 1000 A. Grenzlastintegral .. datasheet abstract.. |
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First line: European PowerSemiconductor Electronics Company GmbH Marketing Information 10..16..R ECONO max. 9-12 Sep. Abstract: .. TA = 35°C, KP 0,41 S VL = 45l/s 104 A. TA = 35°C, KP 0,33 S VL = 90l/s 104 A. Stoßstrom-Grenzwert Tvj = 25°C, tp = 10ms IFSM 650 A. surge forward current Tvj = Tvj max, tp = 10ms 550 A. Grenzlastintegral Tvj .. datasheet abstract.. |
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First line: Aluminum Electrolytic Capacitors / Snap-in Type Series Type Country Origin Japan U.S.A Malaysia Abstract: .. Endurance : 105°C 3000h Terminal Pitch : 10mm When capacitors of φ35× 45L and φ35× 50L are mounted on PWB, reinforce them with mounting clamp or adhesives. Avoid using adhesives including halogenated .. datasheet abstract.. |
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First line: European PowerSemiconductor Electronics Company Marketing Information max. ECONO Elektrische Eigenschaften Electrical properties Abstract: .. TA = 35°C, KP 0,41 S V L = 45l/s 104 A. TA = 35°C, KP 0,33 S V L = 90l/s 104 A. Stoßstrom-Grenzwert Tvj = 25°C, tp = 10ms IFSM 650 A. surge forward current Tvj = Tvj max, tp = 10ms 550 A. Grenzlastintegral Tvj .. datasheet abstract.. |
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First line: European PowerSemiconductor Electronics Company Marketing Information ECONO max. 9-12 Sep. ECONO Elektrische Abstract: .. TA = 35°C, KP 0,41 S V L = 45l/s 153 A. TA = 35°C, KP 0,33 S V L = 90l/s 173 A. Stoßstrom-Grenzwert Tvj = 25°C, tp = 10ms IFSM 1200 A. surge forward current Tvj = Tvj max, tp = 10ms 1000 A. Grenzlastintegral .. datasheet abstract.. |
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