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Part Manufacturer Description Datasheet BUY
HSP50214BVC Intersil Corporation Programmable Downconverter; MQFP120; Temp Range: See Datasheet visit Intersil
HSP50214BVIZ Intersil Corporation Programmable Downconverter; MQFP120; Temp Range: See Datasheet visit Intersil
HSP50214BVCZ Intersil Corporation Programmable Downconverter; MQFP120; Temp Range: See Datasheet visit Intersil
HSP50214BVI Intersil Corporation Programmable Downconverter; MQFP120; Temp Range: See Datasheet visit Intersil
ISL6115ACBZ Intersil Corporation 12V Power Distribution Controllers; SOIC8; Temp Range: See Datasheet visit Intersil
ICL7660AIBA Intersil Corporation CMOS Voltage Converters; PDIP8, SOIC8; Temp Range: See Datasheet visit Intersil

LDR+03+datasheet

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Condition Rating unit Supply voltage range VDD - 0.3 to + 8.0 V Input voltage range VIN All input pins VSS - 0.3 to VDD + 0.3 V VCHV CHV pins 0.5 to 120 VLDR LDR , 41.6 VENAH ENA = "H" VDD + 1.0 - VDD + 0.3 VENAL ENA = "L" VSS - 0.3 - , or modification. Products contained in this datasheet are not intended to be the devices which may Nippon Precision Circuits
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SM8140A CF8140A SM8140AM 1SS250 ldr 10k LDR 24v LDR 20K ldr 100k ldr resistor 80MAX 200VP
Abstract: level of 100 krad with all parameters inside the limits on the datasheet and SMD [9][11]. A. EDLRS , system at National Semiconductor's South Portland radiation facility. All datasheet and SMD parameters National Semiconductor
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ldr 3 pin metal package sensitivity of ldr LDR SPECIFICATION TM1019 LDR Datasheet specification of ldr LM136-2 MIL-STD-883
Abstract: tables indicate if any of the LDR test results were outside the pre irradiation datasheet and SMD , Semiconductor's South Portland radiation facility. All datasheet and SMD parameters were tested [14]-[17]. For , TID level of 100 krad(Si) with all parameters inside the post irradiation limits in the datasheet National Semiconductor
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LM111 LM119 MIL-STD-883G MILSTD-883G 3 pins LDR LM119xRLQMLV LM 3171 MIL-PRF-38535
Abstract: with AnyVoltageâ"¢ Technology Datasheet Customer Use Only Doc. No. MV-S104789-02, Rev. A , : Proprietary 88PG849 Datasheet Document Conventions Note: Provides related information or information , Classification: Proprietary January 7, 2009, 2.00 88PG849 Field Programmable DSP Switcher® Datasheet , -02 Rev. A Document Classification: Proprietary Page 3 88PG849 Datasheet Caution This is a , Classification: Proprietary Page 5 88PG849 Datasheet 4.2 Short-Circuit Waveforms MARVELL
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88PG849E
Abstract: with AnyVoltageTM Technology Datasheet Customer Use Only Doc. No. MV-S104789-02, Rev. A , 88PG849 Datasheet Document Conventions Note: Provides related information or information of special , 88PG849 Field Programmable DSP Switcher® Datasheet PRODUCT OVERVIEW The Marvell® 88PG849 is an , 88PG849 Datasheet Caution This is a very high frequency device, and proper PCB layout is required , . MV-S104789-02 Rev. A Page 5 88PG849 Datasheet 4.2 4.3 4.4 Short-Circuit Waveforms MARVELL
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Light Dependent Resistor LDR FDS642P capacitor cross reference 3303X-3 fds64 30A49
Abstract: in the datasheet of the SDRAM device being used. 1 The SDRAM datasheet lists the timing , register value that will be written to the SDRAM device during its initialization. Refer to the datasheet , sequence, so refer to the datasheet of the particular SDRAM used to determine the correct sequence. The , datasheet of the SDRAM device being used for a catalog of the control bits in the mode control register. 1 , all DDR SDRAM devices require the same initialization sequence, so refer to the datasheet of the Altera
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AN141 sdr sdram pcb layout guidelines sdr sdram pcb layout sdram controller excalibur Board EPXA10 ARM922TTM 800-EPLD
Abstract: tester and test board were used at all test points. All datasheet and SMD parameters were tested. For , with all parameters inside the pre irradiation limits listed in the datasheet and SMD. A. ELDRS National Semiconductor
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LM2941 LM2941WGRLQMLV 5962R9166702VYA ETS500 texas ldr LDR internal diagram MIL-PRF38535
Abstract: mechanism. For further information on boot modes, refer to the STR71 datasheet. The following table STMicroelectronics
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AN1777 ARM str71 LDR 03 datasheet LDR 03 LDR -03 data on LDR AN1777/0304
Abstract: four cells was 12 each. The pre- and postirradiation datasheet limit is 43.0mA typical. Submit , 450k HDR ANNEAL POST 50k LDR ANNEAL LDR GND CH2 LDR GND CH3 LDR GND CH4 0.3 HDR BIAS CH1 , CH1 POST 50k LDR ANNEAL POST 450k HDR ANNEAL LDR GND CH2 LDR GND CH3 LDR GND CH4 0.3 Intersil
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NORPS-12 LDR ISL70419SEH AN1949
Abstract: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter , (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency , ‰¤ 1 MHz - 25 pF VBE(sat) hFE (1) 4/23 DocID16558 Rev 15 0.3 1 V V 1.2 , ) (1) Collector-emitter saturation voltage IC = 150 mA IB = 15 mA - 0.3 V VBE(sat , VCE = 10 V V(BR)CBO [hFE] (1) - - V 1.2 [17.5] [37.5] [50] [20] 0.3 V STMicroelectronics
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MIL-PRF19500 JANSR2N2222AUB MIL-PRF-19500/291 JANS2N2222AUB 2N2222ARUB 2N2222AUB
Abstract:               } [Get Code] Datasheet Example Projects: SHIPPING & RETURNS Arduino
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TINKERKIT LDR SENSOR T000090 T010111
Abstract: DATASHEET 40V Radiation Hardened and SET Enhanced Precision Low Power Operational Amplifier , 0.1 - pA/âšHz 0.3 0.5 - V/Âus 0.2 - - V/Âus 130 450 ns , nA TA= +25°C, post HDR/LDR Rad -15 - 15 nA -5 1 5 pA/°C -2.5 0.3 , 5 pA/°C -2.5 0.3 2.5 nA TA = -55°C, +125°C -3 - 3 nA TA = +25°C , V NOTES: 6. Compliance to datasheet limits is assured by one or more methods: production test Intersil
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ISL70219ASEH ISL70419ASEH UG007 TR002 FN8459
Abstract: CHV LDR VSS OCL 1 2 3 4 8 7 OUT1 OUT2 4.4 ± 0.2 8142A 6 5 VDD OCE 6.4 ± 0.3 + 0.1 0.80 - 0.05 0.575 typ SM8142BV 3.1 ± 0.3 1.15 ± 0.05 0.15 -0.05 +0.1 CHV LDR , ) (LDR) (OUT1/2) V DD VIN VCHV V LDR V OUT1/2 PD Tstg CHV LDR OUT1/2 Ta 85 °C - 0.3 7.0 VSS - 0.3 V DD + 0.3 0.5 120 0.5 120 0.5 120 100 - 55 + 125 V V V V V mW °C 1 V DD2 , 32 205 32 200 31 51 8 V DD-0.5 V SS-0.3 2.0 4.0 64 250 256 256 8.0 256 MIN 1.6 0.5 TYP 3.0 MAX 5.5 Nippon Precision Circuits
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FLC32PC ldr 1000 LDR 005 ldr 05 SM8142 SM8142A SM8142B 200VP-P 1000H SM8142AD
Abstract: · (Unitmm) · EL 0.5 ± 0.2 6.4 ± 0.3 8-pin VSOP + 0.1 0.05 0.15 - 0.575TYP 3.1 ± 0.3 1.15 ± 0.05 SM8144BV 4.4 ± 0.2 Package 0.65 0.10 0.1 ± 0.05 Device , . SEIKO NPC CORPORATION -2 SM8144B VIN - 0.3 7.0 V VSS - 0.3 V DD + 0.3 V V DD (CHV) VCHV CHV 0.5 120 V (LDR) V LDR , V DD-0.5 V DD+0.3 ENA = "L", VDD = 1.6 to 5.5V VSS-0.3 VSS+0.5 V ENAH = V DD = 3.0V Nippon Precision Circuits
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D73LC 2 pin ldr 1SS250F LDR circuit murata dd 1500H LQH4N471K04M00 LQH4N221K04M00 817CE221M NC0006B
Abstract: 4.2 30 0.3 V 0.5 mA NOTES: 7. Compliance to datasheet limits is assured by one or , (Note 8) 6 ppm/°C 30 V 0.3 0.5 mA 2.048 VOUT = 2.048V (Note 10) VIN , , VOUT = 2.048V 0.3 5 ppm/V ï"VOUT /ï"IOUT Load Regulation Sourcing: 0mA ≤ IOUT â , ï"VOUT /ï"VIN Line Regulation VIN = 4.2V to 30V 0.3 5 ppm/V ï"VOUT/ï"IOUT Load , 0.3 0.2 -55°C 1 VOUT 0 -1 -2 0.1 -3 0 4.2 7.4 10.7 13.9 17.1 20.3 Intersil
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ISL71091SEH20 FN8632
Abstract: the pre-irradiation datasheet specifications the part is not considered low dose rate sensitive Intersil
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LDR voltage range ISL70444SEH AN1870
Abstract: ) 6 ppm/°C 30 V 0.3 0.5 mA 3.3 VOUT = 3.3V (Note 10) VIN Input Voltage , 0.3 5 ppm/V ï"VOUT /ï"IOUT Load Regulation Sourcing: 0mA ≤ IOUT ≤ 10mA 11 , Regulation ï"VOUT/ï"IOUT Load Regulation VOUT = 3.3V 4.6 V 0.3 VIN = 4.6V to 30V 0.5 mA 0.3 5 ppm/V VD Dropout Voltage (Note 9) Sourcing: 0mA ≤ IOUT ≤ 10mA 11 , V NOTES: 7. Compliance to datasheet limits is assured by one or more methods: production test Intersil
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ISL71091SEH33 FN8429
Abstract: the device datasheet for power consumption values. Note: If the analog threshold corresponds to , refer to the specific device datasheet for power consumption values. Note: No hysteresis is STMicroelectronics
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AN3248 RM0038 ldr sensor sensor LDR curve sensor LDR stm32l pwm dc motor light intensity variation on ldr STM32L15xxx STM32L15 STM32L1
Abstract: 3 6 VDD OCL 4 5 OCE 0.5 ± 0.2 8 6.4 ± 0.3 1 4.4 ± 0.2 CHV + 0.1 0.05 0.15 - 0.575TYP 3.1 ± 0.3 1.15 ± 0.05 SM8142BV 1 8 OUT1 LDR 2 7 , SM8142 VIN - 0.3 7.0 V VSS - 0.3 V DD + 0.3 V V DD , 256 ENA = "H", VDD = 1.6 to 5.5V VDD-0.5 VDD+0.3 VENAL ENA = "L", VDD = 1.6 to 5.5V VSS-0.3 VSS+0.5 ENA IENAH VENAH = V DD = 3.0V A/B VDD IDD1 B VDD ISTB Nippon Precision Circuits
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SM8142BD SM8142AV 1SS370 diode oce ldr 100 k EL driving NC9810L
Abstract: SM8141AV SM8141BV 8 pin VSOP (Unitmm) CF8141A 0.5 ± 0.2 6.4 ± 0.3 4.4 ± 0.2 + 0.1 0.05 0.15 - 0.575TYP 1.15 ± 0.05 3.1 ± 0.3 0.65 0.10 0.1 ± 0.05 CF8141B 0 to 10 , VDD - 0.3 to 7.0 V VIN VSS - 0.3 to VDD + 0.3 V VCHV CHV 0.5 to 120 , 0.5 VDD + 0.3 ENA = "L", VDD = 2.0 to 5.5 V VSS - 0.3 VSS + 0.5 VENAL 6.0 uA 1 Nippon Precision Circuits
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SM8141 SM8141A SM8141B 11507a 11508A SA8141 NC9710F
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