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LD 5161

Catalog Datasheet MFG & Type PDF Document Tags

LD 5161

Abstract: light intensity of ldr 5121 LDH 5122 LDH 5123 LD Y 5161 LDY 5162 LDY 5163 LD G 5171 LD G 5172 mod (Min) 1.0 2.5 4.0 2.0 4.0 , SIEMENS C M P N T S i OPTO 2SE D fi53bB2t C10040 b7 2 SIEM EN S T-*fl-AI RED LDR 5101/5102/5103 HIGH EFFICIENCY RED LDH 5121/5122/5123 HIGH EFFICIENCY YELLOW LDY 5161 /5162/5163 HIGH EFFICIENCY GREEN LDG 5171/5172 T1% LED LAMP Package Dimensions in Inches (mm) I , LD R510X LD H512X L D Y 516X L O G 517X V mA A °C °C mW K/W · T1 % Package Size · 1* Lead
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LD 5161 light intensity of ldr 2004-9002 LDR DIMENSIONS 5161 LDR510X LDH512X LDY516X

LD 5161

Abstract: hs 5101 a s ) Teat Conditions LD R 5101 LDR 5102 LDR 5103 1.0 2.5 4.0 20mA 20mA 20m A LD H 5121 LD H 5122 LD H 5123 2.0 4.0 6.0 10mA 10mA 10mA LDY 5161 LD Y 5162 LD Y 5163 1.0 2.5 , /5102/5103 LDH 5121/5122/5123 HIGH EFFICIENCY YELLOW LDY 5161 /5162/5163 HIGH EFFICIENCY GREEN LDG , , 7A, 8A, 9A, 10A Green: 1A, 2G, 3B, 5A, 6D, 7C, 8A, 9A, 10A Maximum Ratings LD R 510 X L D H 5 1 2 X LD Y 516 X LD G 517X Reverse voltage Forward current S urge curre nt ( r < 10/is
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hs 5101 a s LQH512X LDG517X

5161 common anode

Abstract: TDSO5151 segment y per g IF = 10 mA TDSR5150/5160 (digit average) 1) IF = 10 mA TDSR5151/5161 Dominant , values of segments a to g 2 (8) Symbol Min IV IV ld lp VF VR 280 450 6 Typ , 10 mA TDSO5151/5161 Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half , ld lp VF VR 700 1800 6 626 635 ±50 2 15 Symbol Min Typ IV IV ld lp VF VR 700 1100 581 6 585 ±50 2.4 15 Symbol Min Typ IV IV ld lp VF
Temic Semiconductors
Original
TDSR515 TDSR516 TDSO515 TDSO516 TDSG515 TDSG516 5161 common anode TDSO5151 TDSR5150 5161 seven segment 5161 common cathode TDSR5151 TDSY515 TDSY516

LD 5161

Abstract: 0D07 REV. NC A DATE 0B/27/9Ö 05/Û 1/04 DESCRIFTION INITIAL RELEASE UPDATE DRAWING FORMAT 2.00 [.079] B.30 [.327]- * REC O M M EN D ED C A B LE STRIPPIN G D IM 'S LO LOCK WASHER (£ > rsi N r- Cl ro LD m a a o O LD P^ lf> CD - U i « 3 - H - t t -13.10 [.5161- MOUNTING H O LES UNLE35 OTHDWBC STD3PC0 D M N 3 D N 5 /TV N MUJMETBS. OMEMSKWS W [ ] ARE N I O C S AND TOW CUSTOM W IWEKANCC PNLX DRAWN APPROVALS
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0D07

history of microprocessor 8086

Abstract: lt 543 of Integer Instruction F ie ld s . 5-154 10.2.4 Encoding of Floating Point , . 5 160 12.0 ELECTRICAL D A T A . 5-161 12.1 Power and Grounding .5-161 12.2 Maximum Ratings .5-161 12.3 D.C. Specifications .
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ICD-486 history of microprocessor 8086 lt 543 addressing modes of 8086 microprocessor microprocessor 8086 flag register CACHE MEMORY FOR 8086 486TM 386TM

MGF4919

Abstract: MGF4919G A IN â'¢ VDS=2V,lD=10mA GD-16 â'¢ Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS , Associated gain VDS=2V,lD=10mA - 75 - V mS V G s(off) gm Gs NFmin. Minimum noise figure VDS=2V,lD=10mA f=12GHz V 12.0 13.5 - dB MGF4916G - - 0.80 , NOISE InGaAs HEMT TYPICAL CHARACTERISTICS Id (Ta=25 C) vs. V gs Id vs. V ds lD , SEMICONDUCTOR (GaAs FET) MGF491xG Series SUPER LOW NOISE InGaAs HEMT S PARAMETERS (Ta=25'C,VDS=2V,lD
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MGF4919G MGF4919 MGF491

n channel fet k 1118

Abstract: GS 069 ® Drain G D -4 RECOMMENDED BIAS CONDITIONS 0 V ds = 2 V , lD =10m A # Refer to Bias Procedure , Super Low Noise InGaAs HEMT Typical Characteristics S Parameters (Ta=25°C , V ds =2V , lD=10mA ) f , 5.585 5.401 5.161 4.899 4.626 4.316 4.100 3.887 3.765 3.617 3.526 3.421 3.349 3.333 3.349 3.356 3.337 , 0.69 0.72 0.80 0.86 0.91 0.95 0.96 0.98 1.01 1.11 K Noise Parameters (Ta=25°C , VDS=2V , lD
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MGF4319G n channel fet k 1118 GS 069 mgf4316g MGF431 MGF4316G
Abstract: plated .0 000 30 [0 .0 0 0 7 6 ] go ld on contact area, .0 0 0 1 0 0 -0 0 0 2 0 0 [0 .0 0 2 5 4 -0 .0 0 5 0 8 ] tin -le a d on so ld e r area, w ith en tire post underplated .0000 50 [0 .0 0 1 2 7 ] nickel P la ting B D uplex plated .0 00015 â'" [0 .0 0 0 3 8 ] g o ld on contact area, 0 0 0 1 0 0 , [40.64] 1-103164-5 1-102055-5 â'" 1-87572-4 40 2.112 [53.64] 2.032 [51.61] 1.900 -
OCR Scan

RFP12P08

Abstract: AN7254 -220AB SOURCE 5-161 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD , SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFP12P08 BVdss lD = 250nA , Resistance (Note 2) rds(on) lD = 12A, VGS = -10V, (Figures 6, 7) - - 0.300 Q. Turn-On Delay Time 1d(ON) ID = , 7 lD MAX CONTINUOUS , 6 8 10 12 14 lD; DRAIN CURRENT (A) 16 18 20 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN
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RFP12P10 TA17511 TB334 AN7254 300S2 1-800-4-HARRIS
Abstract: Postsâ'" C opper a llo y, plated .0 000 30 [0 .0 0 0 7 6 ] g o ld over .0 0 0 0 5 0 [0 .0 0 1 2 7 , ¡43 .99 ] 1.600 [40 .64 ] 2.304 [ 58 .52 ] 2.504 [63 .60] . 1.506 [38 .25] 2.032 [ 51.61 -
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Abstract: No. 68664 Base No. 68665 Base No. 68666 0.38 urn (15 pin.) go ld 0.76 |jm (30 pin.) g o ld 0.38 pm (15 pin.) GXTâ"¢ 0.76 pm (30 pin.) GXTâ"¢ mm in. mm in. 2x3 , 51.61 2.032 1.68 0.066 44.86 1.766 2 x 21 -018 -019 -019 -019 -019 -
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Abstract: -0 rated Postsâ'" C op p er allo y, d u p lex plated .0 0 0 0 3 0 [0 0 0 0 7 6 ] go ld on , [16.05] [18.59] [21.13] [23.67] [26.21] [33.83] [38.91] [43.99] [51.61] [64.31] [77.01 -
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I2-54
Abstract: Y OHIO ELECTRIC / C D WARREN, PACKARD DELPHI / 5161 CD -3 . 1 ± 0 . , 5. WHEN H O LD IN G T E R M IN A L IN A F I X E D GAUGE OR " B " D IM E N S IO N D I S T A N C E , 9 9 B C 3 0 .6 0 .6 0 .2 5 0 .2 5 D 5161 4 4 1>2,3,5 1,2,3,5 A P P L I C A -
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C60-61 O8MY90 C44-45 16AP86

of IC 74191

Abstract: ci 74191 0 I1 d d V 3d3HM Id V d G ' JO I "ON 133H S 5-161 n - a s _ "ON ONIMVdQ 319 VÌ , NouvHdOdNi in o A v i ad voa iv N o m a a v dod n i "NMOHS SV A ld lV H IX O dd dV a d iv 3 0 i da i i v h s ( w a A ) daoo d iv a n o i a dnod ". "NMOHS SV A ld lV H IX O dd dV OdlVOOl ONV fi3NisnoH do s d a is , [AJ033d 3H1 "OdVOB "3"d 5 0 0 "-/ 100°+ 390° S ld d 3 3 V 103S 0dV3 ° °S3I1ddV XXXX-161 b l- S d N 0 U V 3 Id I3 3 d S 13n00dd °' "IIVddAO NI1 IAJnIAJrI[AJ £ 00 -0/8 00 00 " - S>1303dd0d IV ld A I "IIVddAO
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of IC 74191 ci 74191 X310IAJ SN0ISN31A X310IAI I/I0/66 N0S33N 31V0S

n channel fet k 1118

Abstract: MGF4316G =25°C , Vds=2V , lD=10mA) f (GHz) S11 S21 S12 S22 MSG/MAG (dB) K Magn. Angle Magn. Angle Magn. Angle , -70.9 5.161 111.8 0.064 42.4 0.457 -58.2 21.6 0.35 5 0.831 -88.8 4.899 96.8 0.075 29.3 0.424 -71.6 19.8 , Parameters (Ta=25°C , Vds=2V , lD=10mA) f (GHz) G opt. Rn (£1) NFmin.(dB) Gs (dB) Magn. Angle
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MGF4316 gD 679 transistor st 3617 low noise hemt transistor
Abstract: id th 2 B G P T h r e a s h o ld V o lta g e 1 B G P T h r e a s h o ld V o lta g e 2 S e c o n d a , (V ) Color Control Voltage vs. Chroma Gain Changeable Naupapalifadio Co^Xid. 5-161 -
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NJM2255 NJM22S5D NJM225S

Lambda LCS-A

Abstract: Lambda LCS-CC 6) Shock-MIL-STD-8108, Method 516.1, Procedures I and III, MIL-E-5272C, Para. 4.15.5.1, 4.15.5.2 , tracking unit outputs. (d) Ratings in parenthesis for LD and LN Series when cover is used. (A) Alt , range. LD, LC, LN, and LX Series power modules are available for operation at 360-44OHZ. Consult , parenthesis for LD and IN Series when cover is used. (A) All outputs continuously adjustable over entire range , output voltage range. (C) LD, LC, LN, and LX Series power modutes are available for operation at
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Lambda LCS-A Lambda LCS-CC Lambda LCS lambda lxs Lambda Precision Voltage Regulators Lambda LC MIL-STD-810 360-440H

GS 1223

Abstract: MGF4919G -159.1 -171.8 175.3 163.1 152.9 140.1 125.8 109.8 91.2 Mag. 5.775 5.585 5.401 5.161 4.8 99 4.6 26 4.3 16 , 12.7 12.7 12.5 12.1 NOISE PARAMETERS Freq. (GHz) 4 8 12 14 18 (T a = 2 5 ' C,VDS=2V,lD
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4919G GS 1223 opa 741 mgf49 4916G 12GFI F4916G F4919G

RFD8P05SM

Abstract: RFP8P05 . Proper J.C. handling procdures shouid be followed. Copyright © Harris Corporation 1991 5-161 File Number , Voltage Vfpiaieau} lD = 8A,VDS = -15V - -8 V Turn-Off Energy Loss per Cycle Eoff VdD-25V,ID = 4A, RL =
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RFP8P05 RFD8P05 RFD8P05SM 06V8 RFD8P05/05SM V68MPC6 AN-7254

CEM9935

Abstract: OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVdss Vgs=0V, lD=250pA 20 V Zero Gate , . Rsja (t)=r (t) * R»ja 2. FH.JA=See Datasheet 3. Tjm-Ta = Pdm* Rsja (t) 4. Duty Cycle, D=ti/b 5-161
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CEM9935
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