NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| LB1500 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| LB1500 | Sanyo Semiconductor | Processor IC |
6 pages, |
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| LB1500 | Sanyo Semiconductor | Sanyo Datasheets, Cross References and Circuit Examples |
1 pages, |
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| LB1501 | Sanyo Semiconductor | Sanyo Datasheets, Cross References and Circuit Examples |
1 pages, |
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| LB150-Series | Beijing Tianrun High Voltage Electronic Devices Factory | Silicon Full Bridge Rectifier |
2 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2. IF VRRM T rr A V u s 1 RD 100V-1200V 2 FRD 1A-4A 100V-1200V 3 U05 0.5 0.5-0.8A 100V-1000V U08 4 DF-S DB-S 5 100V-1200V 1A 100V-1200V DB 6 XQL 7 1A FXQ 1A-4A 100V-2000V 1A-4A 100V-2000V 0.2-0.5 8 UB150 UB150 LB150 9 RB 1A-8A 100V-1200V 10 RS 1A-8A 100V-1500V 11 KBP 2A 100V-1500V 12 KBL 4A ... | Original |
2 pages, |
1A-30A 3Kv 1a 1A20A 1A4A datasheet abstract |
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| Abstract: Nominal size mm LB-50 LB-50 LB-80 LB-80 LB-100 LB-100 LB-150 LB-200 LB-200 LB-250 LB-250 LB-300 LB-300 50 80 100 150 200 250 , LB-150 125 175 1.6 LB-100 LB-100 160 6.3 LB-80 LB-80 4.0 Outer Aperture diameter Circle ... | Original |
6 pages, |
XSJ-39B lb 1641 gas oil Wiring Diagram Great wall LB-250 12-M36 Flow meter LB-50 LB-80 LB-100 LB-150 LB-200 LB-300 LB-50 abstract |
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| Abstract: (H11C4 H11C4, H11C5 H11C5, H11C6 H11C6) VRM 400 V Rgk=10 kil, Ta=100°C, lB=150/u.A On-state voltage V™ 1.1 1.3 V ... | OCR Scan |
5 pages, |
st1602 H11C H11C1 H11C2 H11C2 equivalent H11C3 H11C4 H11C5 H11C6 scr 220v solid state relay 220V solid state relay 220v 10a 220vac relay 8T20 sci46d H11C1 abstract |
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| Abstract: , H11C6 H11C6) VRM 400 V Rgk=10 kil, Ta=100°C, lB=150/u.A On-state voltage V™ 1.1 1.3 V l™=300 m A Off-state ... | OCR Scan |
5 pages, |
H11C1 H11C2 H11C3 H11C4 H11C5H11C6 H11C1 abstract |
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| Abstract: hp 1502 vga JMC-251-250 MP1410 upc 3842 LB75T-A LB75T-A LB25 MT LB100T-A LB100T-A LB35 MT LB125T-A LB125T-A LB45 MT LB150T-A LB55 MT LB200T-A LB200T-A LB65 MT ELBY-50 ELBY-50 LBY15 LBY15 , LB57 LB57 LB57 SA LB57 SA LB58 LB58 LB150-A LB59 LB67 LB67 LB67 SA LB67 SA GUB-1 GUB01 GUB01 , LB125M LB125M LB150M LB150M LB200M LB200M LB200M LB200M LB250M LB250M LB250M LB250M LB300M LB300M LB300M LB300M LB350M LB350M LB350M LB350M LB400M LB400M LB400M LB400M LB50M LB50M ... | Original |
257 pages, |
HX 2272 st l9150 c125t L9100 mt 1389 110 3CG 931 C125T-A St4540 nec 16315 bt100a nec 14305 l9150 MNT S100 transistor nec 8772 stc 1740 XFC-210 ECGJH110 XFC-210 abstract |
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| Abstract: (sat) lB=-150mA, lc=-1.5A. -1.5 V Ia=-600mA, lc=-3A -2 V Base Emitter On Voltage Vbe (on) VCe= - , , lB=-600mA - 1.7 - V Base-Emitter Saturation Vçltage Vbe (sat) lc=-1.5A, lB=-150mA -1.5 V lc=-3.0A ... | OCR Scan |
4 pages, |
MJE171 MJE170 MJE170 abstract |
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| Abstract: V VCE(SAT) lc=15A, lB=150mA 4.0 V VBE(SAT) lc=10A, lB=100mA 3.5 V VBE(SAT) lc=15A, Ig=150mA ... | OCR Scan |
2 pages, |
2N6578 2N6577 2N6576 BM-500 datasheet abstract |
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| Abstract: MIN MAX UNITS *on VCC=50V, lc=500mA, lB1=50mA 35 - 50 ns ns ton VCC=30V, lc=500mA, lB1=50mA - 40 ... | OCR Scan |
2 pages, |
BSX61 BSX60 BSX59 BSX59 abstract |
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| Abstract: ui35 lB=150fiA_ I lB = 100fiA _j=50,iA 01 2 345 6 76 9 10 Vce (V), COLLECTOR-EMITTER VOLTAGE DC CURRENT GAIN ... | OCR Scan |
2 pages, |
KSA642 2SD227 2SD227 abstract |
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| Abstract: 0.9 0.9 V VBE(SAT) lQ=500mA, lB=50mA 1.1 1.1 V VBE(SAT) lc=1.0A, lB=150mA 1.2 1.2 V hFE ... | OCR Scan |
2 pages, |
BSW68 BSW67 BSW67 abstract |
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| Abstract: Model 11 Subminiature Load Cell DESCRIPTION Model 11 (tension/compression) subminiature load cell is The model achieves a non-linearity and hysteresis of 0.5 % full designed to measure load ranges from 150 g to 1000 lb. With scale respectively and a frequency response of up to 58 kHz. A subminiature dimensions, including diameters from .50 in to 0.75 balance module is included in the load cell's lead wire cable for in and height of 0.38 in, these units are easily incorporate ... | Original |
4 pages, |
subminiature load cell PTIH-10-6P load cell to measure load and torque datasheet abstract |
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| Abstract: Model 13 Subminiature Load Cell DESCRIPTION Model 13 (compression only) subminiature load cell is designed frequency response and low deflection to achieve a combined to measure load ranges from 150 g to 1000 lb. With subminiature non-linearity and hysteresis of 0.25 % to 0.5 % full scale. A dimensions, including diameters from 0.38 in to 0.75 in and balance module is included in the load cell's lead wire cable for heights of 0.13 in to 0.25 in, these units are easily incorp ... | Original |
4 pages, |
subminiature load cell sensotec load cell Sensotec datasheet abstract |
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| Abstract: - 142 - NJM2068 NJM2068 20ÃŒ-&, OZJls-U- h:7. 5V/iis •b fi K y - x a « a / / f 1. A OUTPUT 2. A -IN PUT 3. A + INPUT 4. V" 5. B + INPUT 6. B -INPUT 7. B OUTPUT rnnrrmi JRC nsBst! NJM2068 NJM2068 # Ã- Vs=±15V HIE ±18 V Ta-25°C A il «II ±15 V ±30 V » fi: a « -20-+75 •c nrnm* D: 500, M:300, L : SOG II« m « a n sat n m « 8ÃŒI • (4 Vos 0.3 3 nV vo mastm TC/Vos / / Mire vomms^it Vos/time / / uWH AWO*« lb 150 1000 riA ... | OCR Scan |
1 pages, |
NJM2068 NJM2068 abstract |
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| Abstract: BGY17 BGY17 SILICON PLANAR NPN QUAD, HIGH-CURRENT SWITCH The BGY 17 is an assembly of four isolated silicon planar epitaxial NPN transistors* in Jedec TO-116 14-lead dual in-line plastic package, specially designed for medium-current, highspeed switching and driver applications. * Similar to 2N 3725 ABSOLUTE MAXIMUM RATINGS VcBO Collector-base voltage (lE= 0) 60 V ^CEO Collector-emitter voltage (lB= 0) 40 V Vebo Emitter-base voltage (lc= 0) 6 V 'cm Collector peak current 1 A f'tot Total powe ... | OCR Scan |
2 pages, |
BGY17 BGY17 abstract |
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| Abstract: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS .designed for use in power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage vCE(satf0-4 V(Max) @Ic=3.0A,Ib=0.15A * DC Current Gain hFE= 70-240@lc= 1.0A * High Speed Switching Time t^=1.0 us (Typ.) MAXIMUM RATINGS PNP 2SA1012 2SA1012 5 AMPERE POWER TRANASISTORS 50 VOLTS 25 WATTS Characteristic Symbol 2SA1012 2SA1012 Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage vcbo 60 V Emitter-Base Voltage Vebo 5 V Collector ... | OCR Scan |
3 pages, |
2SA1012 datasheet abstract |
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| Abstract: CO530 FAST SWITCHING DARLINGTON TRANSISTOR They are high voltage,high current devices for fast switching applications. FEATURES: * Collector-Emitter Sustaining Voltage - Vceo ... | OCR Scan |
3 pages, |
BU807 BU806 BU807 abstract |
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| Abstract: ÜÄMOSPEC HIGH VOLTAGE POWER DARLINGTON TRANSISTOR . power monolithic Darlington, specially instended for use in automotive ignition circuits. FEATURES: * Collector-Emitter Sustaining Voltage - CEO(SUS) 400 V (Min.) Low Collector-Emitter Saturation Voltage -VCE(sat) = 2 0V ... | OCR Scan |
2 pages, |
npn darlington transistor 150 watts ignition circuits BUV37 npn darlington 400v 15a datasheet abstract |
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| Abstract: BSS 26 SILICON PLANAR NPN HIGH-VOLTAGE, HIGH-CURRENT SWITCH The BSS 26 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for high voltage, high current switching applications. ABSOLUTE MAXIMUM RATINGS VCBO Collector-base voltage (lE =0) 60 V VCES Collector-emitter voltage (VBe = 0) 60 V VCEO Collector-emitter voltage (lB = 0) 40 V VEBO Emitter-base voltage (lc = 0) 6 V »C Collector current 1 A Pfot Total power dissipation at Tamb < 25°C 0.36 W atT ... | OCR Scan |
4 pages, |
BSS26 J055 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| A Linear B IN_Linear OUT DC/DC OUT LA OUT LB 150 mF 1 mF 15 mH DC/DC Ref Ref _Linear OUT DC/DC OUT LA OUT LB 150 mF 1 mF 15 mH DC/DC Ref Ref Vref Lx Virtual GND 0 Linear B IN_Linear OUT DC/DC OUT LA OUT LB 150 mF 1 mF 15 mH DC/DC Ref Ref Vref TEST CIRCUIT F SHDN= LOW DC/DC Linear A Linear B IN_Linear OUT DC/DC OUT LA OUT LB 150 mF 1 mF 15 mH DC/DC Ref Ref Vref Lx Virtual GND 0.1 mF GND_SW - + GND www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7404.htm |
STMicroelectronics | 09/11/2000 | 11.08 Kb | HTM | 7404.htm |
| .model MN.1 nmos $ n1p2/0p4 L3267 L3267 L3267 L3267_s Lot#xxx * Sep 15,95 rev.0 + wref=1.2u lref=0.4u xwref=-1.000000e-7 xlref=0.000000 + wmin=1.2u wmax=1.5u lmin=0.4u lmax=0.5u + wmlt=mult1 lmlt=mult1 level=28 + acm=3.000000e+00 tlev=1 capop=4 + + + toxm=toxn rsh=rshn vddm=3.600000e+00 + xw=xwn xl=xln delvto=delvton + wd=2.000103e-07 ld=1.750000e-08 + meto=4.160000e-08 xqc=4.000000e-01 + ldif=1.400000e-07 hdif=3.400000e-07 + rs=3.314019e+03 rd=3.314019e+03 + js=5.300000e-08 jsw=2.700000e-13 n=1 www.datasheetarchive.com/files/intel/design/bridge/password/l3267_~3.txt |
Intel | 18/06/1998 | 54.92 Kb | TXT | l3267_~3.txt |
| Part | Similar Part | Notes |