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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

LB 122 NPN TRANSISTOR

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LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS · Complementary to TIP125/126/127 NPN EPITAXIAL DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : TIP120 : TIP121 : TIP122 Collector-Emitter Voltag» : TIP120 : TIP121 TIP 122 Emitter-Base Voltage , 0.1MHz V V V PF 623 ELECTRONICS TIP120/121/122 0C CURRENT GAIN NPN EPITAXIAL DARLINGTON , Symbol V c e o (SUS) Test Conditions lc = 100mA, lB= 0 Min 60 80 100 Max Unit V V V IcEO
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LB 122 transistor LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor TIP 122 transistor TIP120/121/122

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR NPN EPITAXIAL TIP120/121 /122 DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING , This Material Copyrighted By Its Respective Manufacturer NPN EPITAXIAL TIP120/121 /122 DARLINGTON , TIP121 TIP122 TIP120 TIP121 TIP122 Vceo(sus) lc= 100mA, lB=0 60 80 100 V V V Collector Cutoff Current Collector Cutoff Current IcEO IcBO Vce = 30V, lB=0 Vce = 40V, lB=0 Vce = 50V, Ib=0 Vcb = 60V, lE=0 Vcb = , Saturation Voltage VcE(sat) lc= 3A, lB= 12mA 2.0 V le = 5A, lB= 20mA 4.0 V * Base Emitter On Voltage
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TIP 122 100 V NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122 LB 122

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING , = 10V, lE= 0 , f = 0.1M Hz 200 PF TIP120/121/122 NPN EPITAXIAL DARLINGTON TRANSISTOR DC , ) Test C ond itio ns Min Max Unit lc = 100mA, lB= 0 TIP120 60 TIP122 V 80 , = 0 1 VCB = 80V, lE= 0 IcBO 2 VCE= 50V, lB= 0 TIP122 VCE= 30V, lB= 0 V ce = 40V, Ib = 0 IcEO 1 12m A 2.0 V = 5A, lB = 20m A 4.0 V VBE(on) * P ulse
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npn darlington transistor 200 watts

Abstract: NPN power transistor 15A amperes ) 925-7272 DA11/DB12 NPN Power Switching Darlington Transistor Sets 300-350-800 Amperes/400-500 Volts , , Youngwood, Pennsylvania 15697 (412) 925-7272 DA11/DB12 NPN Power Switching Darlington Transistor Sets , ) 925-7272 DA11/DB12 NPN Power Switching Darlington Transistor Sets 300-350-800 Amperes/400-500 Volts , DA11/DB12 NPN Power Switching Darlington Transistor Sets 300-350-800 Amperes/400-500 Volts reverse , Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 (412) 925-7272 D62T NPN Power Switching
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DA11403508 DA11503008 DB12408005 DB12508004 npn darlington transistor 200 watts NPN power transistor 15A amperes npn darlington transistor 150 watts 100 amperes npn darlington 419-1 transistor 0D057DS 0D027D

BUX98P

Abstract: LB 137 transistor ¿57 SGS-THOMSON BUX98P HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . HIGH CURRENT CAPABILITY . FAST , CONVERTERS DESCRIPTION The BUX98P is a silicon multiepitaxial mesa NPN transistor in JedecTO , Unit VcEV Collector-Emitter Voltage (VEb = - 1.5V) 850 V VcEO Collector-Emitter Voltage (lB = 0) 450 , le = 20A lB = 4A le = 20A lB = 4A Tj = 100°C 0.35 0.7 0.9 2 V V VÃE(sat)* Base-Emitter Saturation
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LB 137 transistor

TN3725A

Abstract: LB 122 NPN TRANSISTOR -226 SOIC-16 NPN Switching Transistor This device is designed for high speed core driver applications up , Copyrighted By Its Respective Manufacturer in ev r-co a a. < in CM h-co NPN Switching Transistor , Its Respective Manufacturer NPN Switching Transistor (continued) CO >1 IO en > â o D GO Is* cn , 00MDL5S Ã"4T 5-61 This Material Copyrighted By Its Respective Manufacturer NPN Switching Transistor , This Material Copyrighted By Its Respective Manufacturer NPN Switching Transistor (continued) AC
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TN3725A MMPQ3725 TN3725 transistor A4t 35 SD113G 100KS1

2N2222 npn

Abstract: LB 122 NPN TRANSISTOR ) 2N2221 AND 2N2222 NPN SILICON TRANSISTOR JEDEC TO-18 CASE - MECHANICAL OUTLINE .209(5.31) Bottom View , ) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N2221 2N2222 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221, 2N2222 types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching , 60 V bvceo lc=10mA 30 30 V bvEbo Ie=10JJA 5.0 5.0 V VCE(SAT) lc=150mA, lB=15mA 0.4 0.4 V
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2N2222 npn 2N2221-2N2222 2N2222 hfe 2n2222 npn transistor general purpose 2n2222 npn switching transistor npn 2n2222 transistor 100MH

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING , , Duty C y c le < 2 % 117 ELECTRONICS â  7^4142 [1025507 b?fi â  TIPI 20/121/122 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR OC CURRENT GAIN BASE-EM ITTER SATURATION VOLTAGE , mA mA mA mA mA mA mA 60 80 100 V ce = 30V, lB = 0 V ce = 40V, lB= 0 V ce = 50V, lB= 0 , V ce = 3V, lc = 3A lc = 3A, I b = 12mA lc = 5A, lB = 20mA Vce = 3V, lc = 3A Vcb= 10V, lE = 0, f
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TIPI25/126/127
Abstract: 61096 JUS=- 2N2222A GENERAL PURPOSE NPN TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION , 61096 2N2222A GENERAL PURPOSE NPN TRANSISTOR, Continued OPTICAL/ELECTRICAL CHARACTERISTICS AT 25Â , Leads - Dia 0021 (0.53) 0.016(0 41) 0.048(1.22) â'¢0 02 8 (0 71) D ia 0.030 (0.76) Max0 , switching transistor. Dimensions are in inches (millimeters) Absolute Maximum Ratings (TA = 25Â , Voltage lc = 10mA, lB = 0 50 V ^(BR)EBO Emitter-Base Breakdown Voltage ie = 10ha, ic = -
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MIL-S-19500

LB 122 transistor

Abstract: 61084 2N2222AUA SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR msOPTOELECTRONIC PRODUCTS , NPN GENERAL PURPOSE TRANSISTOR, C ontinued OPTICAL/ELECTRICAL CHARACTERISTICS AT 25°C UNLESS , -v IDENTIFIER 0.225 (5.72) 0.215 (5.46) L 0.028(0.71) 0.022(0.56) ] & 0.048 (1.22) 3 pL , mount general purpose switching transistor. This miniature ceramic package is ideal for designs where , Emitter-Base Breakdown Voltage Collector-Base Cutoff Current TEST CONDITIONS lc = 10nA, lE = 0 lc = 10mA, lB =
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Abstract: 61084 2N2222AUA SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS , (1.22) 0.032 (0.81) 2 0.028(0.71) 0.022(0.56) l 0.055(1.40) 0.045(1.14) COLLECTOR T The 2N2222AUA is a hermetically sealed ceramic surface mount general purpose switching transistor , ., Garland, TX 75040 â'¢ (214) 272-3571 â'¢ Fax (214) 487-6918 7' 4 61084 2N2222AUA SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR, C ontinued OPTICAL/ELECTRICAL CHARACTERISTICS AT 25°C UNLESS OTHERWISE -
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IP122

Abstract: transistor darlington TIP-120 TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS · Complement to TIP125/126/127 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic C o lle c , NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BASE-EM ITTER SATURATION VOLTAGE CO LLECTO R-EM ITTER , 0 ^ s , D u ty C y c le < 2 % Iebo tlFE VcE(sat) V BE
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IP122 transistor darlington TIP-120 tip122c

LB 122 NPN TRANSISTOR

Abstract: BUX98AP ¿t7 SGS-THOMSON BUX98AP HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . HIGH CURRENT CAPABILITY . FAST SWITCHING SPEED APPLICATIONS . HIGH , silicon multiepitaxial mesa NPN transistor in jedec TO-218 plastic package, intended for use in industrial , Cut-off Current (lB = 0) VcE = VcEO 2 mA Iebo Emitter Cut-off Current (lc = 0) Veb = 5 V 2 mA VcEO , Sustaining Voltage L = 2mH lc = 1 A 1000 V VcE(sat)* Collector-Emitter Saturation Voltage lc = 16 A lB =
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to-218 SOT-93
Abstract: M i- 2N2222A GENERAL PURPOSE NPN TRANSISTOR 61096 OPTOELECTRONIC PRODUCTS DIVISION , '¢ (214) 272-3571 â'¢ Fax (214) 487-6918 7-12 61096 2N2222A GENERAL PURPOSE NPN TRANSISTOR, Continued , ) 0178(4 52) Dia Dia 0.048(1.22) â'¢0028 (0 71) 0.030 (0.76) Maxâ'" 0.750 (19.05) Min 0.500 , transistor. Dimensions are in inches (millimeters) A bsolute M axim um R atings (TA = 25°C unless , V V(BR )C EO Collector-Emitter Breakdown Voltage lc = 10mA, lB = 0 50 V V(BR )EBO -
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T1P121

Abstract: T1P127 Transistor Device Data TIPI20 TIPI 21 TIP 122 TIPI25 TIPI26 TIPI27 ELECTRICAL CHARACTERISTICS (Tc  , Motorola Bipolar Power Transistor Device Data TIPI20 TIPI21 TIPI22 TIPI25 TIP126TIP127 NPN TIPI 20, T1P121 , -220AB Compact Package "MAXIMUM RATINGS NPN TIPI 20* TIP121* TIP122* PNP TIP125* TIP126* TIP127* 'Motorola , tip122, t1p127 100 â'" Collector Cutoff Current 'CEO mAdc (Vch » 30 Vdc, lb - 0) tip120, tip125 _ 0.5 (Vce - 40 Vdc, lB - 0) tip121, t1p126 _ 0.5 (Vqe - 50 Vdc, lb - 0) tip122, tip127 â'" 0.5
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T1P127 T1P126 tip122 motorola OF TRANSISTOR tip122 tip121.tip122 T1P-127

N6034

Abstract: TIC 122 Transistor . 2N6029 7:3 J ^ PNP 2N6034 2N6035 2N6036 NPN 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY , BSC 0 094 BSC H 1.22 241 0 050 0095 .1 039 063 MIS 0 025 K 1461 1663 0 575 0555 M 3° TYP r KP n , , 2N6038, 2N6039 NPN ' â  T-33-29 â'¢ELECTRICAL CHARACTERISTICS (Tc= 55°C unless otherwise noted , Collector-Cutoff Current ICEO HA (VCE =40 Vdc, lB - 0) 2N6034, 2N6037 - 100 (VCE=60Vdc, lB = 0) 2N6035, 2N6038 â'" 100 {Vce = 80 Vdc, lB - 01 2N6036, 2N6039 - 100 Collector Cutoff Current 'CEX eA
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N6034 TIC 122 Transistor 2M6039 K1461 2sc 3138 TRANSISTOR 2SC 733 2NE034 2N603S

BUW90

Abstract: HIGH POWER NPN SILICON TRANSISTOR ¿57 SGS-THOMSON BUW90 HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY . FAST SWITCHING SPEED . VERY LOW SATURATION VOLTAGE AND HIGH , DESCRIPTION The BUW90 is a Multiepitaxial planar NPN transistor in TO-218 plastic package. It's intented for , 0.35 A lc = 11 A Ib = 1.1 A lc = 5.5 lB = 0.35 A T, = 100°C lc = 11 A Ib = 1.1 A Tj = 1 00°C 0.5 0.65 0.5 0.8 0.8 0.9 0.9 1.2 V V V V VÃE(sat)* Base-Emitter Saturation Voltage |c = 11 A lB = 1.1 A
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HIGH POWER NPN SILICON TRANSISTOR BUW9 SC-0351

TIP 122

Abstract: texas instruments tip122 , TIP121, TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed For , Dissipation Derating Curve, Figure 10. 4. This rating is based on the capability of the transistor to operate , - â'"-â'" I TIP120, TIP121, TIP122 T-33-29 ì N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS TIPI 20 TIPI 21 TIP 122 UNIT MIN TYP MAX MIN TYP MAX MIN TYP MAX v(BR|CEO Iq = 30 mA, lB - 0, See Note 5 60 80 100 V ICEO VCE =
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TIP 122 texas instruments tip122 TEXAS INSTRUMENTS TIP120 T1P120 TIP122 texas instrument br 3689

LB 122 transistor To-92

Abstract: LB 122 NPN TRANSISTOR SAMSUNG SEMICONDUCTOR INC 14E D | 71b4142 OOObflSl 2 | KSC815 NPN EPITAXIAL SILICON TRANSISTOR , SEMICONDUCTOR INC T"^"/^ 1HE D | 7^4142 000t>û52 M | KSC815 NPN EPITAXIAL SILICON TRANSISTOR STATIC , Collector-Emitter Breakdown Voltage BVceo lc=10mA, lB=0 45 V Emitter-Base Breakdown Voltage BVebo Ie = -10/iA, lc , =10V, lo »10mA 0.6 0.65 0.9 V Collector-Emitter Saturation Voltage Vce (sat) lc=150mA,lB'=15mA 0.15 0.4 V Base-Emitter Saturation Voltage Vbe (sat) lc=150mA,lB=15mA 0.83 1.1 V Current Gain-Bandwidth
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KSA539 LB 122 transistor To-92 samsung l300 L300 TRANSISTOR A52
Abstract: à T SGS-THOMSON n© )IIL[iC î © lsi(S TIS iD S BUT70 HIGH POWER NPN SILICON TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST , CONTROL . HIGH FREQUENCY AND EFFICENCY CONVERTERS DESCRIPTION The BUT70 is a Multiepitaxial planar NPN transistor in TO-218 plastic package. Itâ'™s intented for use in high frequency and efficiency converters , o lta g e le le le le = = = = 70 70 35 35 A A A A Ib = lB = lB = Ib = -
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