NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: of 3mW for laser beam printer. Features 2 Visible light output : p = 780nm Optical power output : 5mW CW Built-in photo diode for monitoring laser output - Package Type : TO-18 - LD , SLD78018262 SLD78018262 Specifications Description SLD78018262 SLD78018262 is a MOCVD grown 780nm band AlGaAs laser , output power P 5 mW Laser diode reverse voltage V 2 V Photo diode reverse voltage , 60 mA Po=3mW Operating voltage Vop 1.9 2.3 V Po=3mW Lasing wavelength p ... | Original |
2 pages, |
photo diode uv Front Monitor Diode 780NM Laser-Diode 780nm laser diode "Photo Diode" LASER 3mW SLD78018262 SLD78018262 abstract |
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| Abstract: purpose laser printers Information processing equipment Absolute Maximum Ratings Parameter ~ Optical power output Ratinga 5 2 -30 - ÂlOto +60-" Â4r)to +85 :"" Symbol Po - Laser , MM ] TYP I M A X l-i 4 0 1 7 0 -B5:X P o = 3mW `_ Po=3mW ! 770 ] 780 ! Po=3mW 2mW lF(3mW) Â IF(l mW) Differential efficiency * 1 Initial value * 2 S!ngle transverse mode . nm mA Im Po=3mW Po=3mW _ Po=3mW Po=3mW Emlsslon point accuracy mA mA v 795_ . ... | Original |
1 pages, |
LASER 3mW LT026MS LT026MS abstract |
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| Abstract: Semiconductor Laser Panasonic LN9R05MS LN9R05MS / NS Red Light Semiconductor Laser â- Outline The LN9R05MS/NS LN9R05MS/NS, a visible light semiconductor laser is a red semiconductor laser which can function as a high-performance light source for data processing devices such as bar code scanners, laser beam printers, and optical disks, as well as measuring devices such as position sensors, and display devices such as laser pointers. High-precision MOVPE is used as the crystal growth method. The laser structure is optimized ... | OCR Scan |
2 pages, |
LN9R05NS LN9R05MS LN9R05MS/NS LN9R05MS abstract |
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| Abstract: Semiconductor Laser Panasonic LN7301S LN7301S 1.3|im Band InGaAsP Semiconductor Laser Light source for , Maximum Ratings (Ta = 25°C) Parameter Symbol Ratings Unit Radiant power Po 5 mW Reverse voltage Laser , Positional tolerance y AXAYÄÄt0.07 Kovar glass fn=1.498) chip 1: Laser cathode 2: Common case 3: PIN , Unit Threshold current la, CW 7 15 30 mA Operating current Iop Po=3mW 17 27 45 mA Operating voltage Vqp Po = 3mW 1.2 1.5 V Oscillation wavelength P0=3mW 1.27 1.30 1.33 Jim Radiation angle ... | OCR Scan |
1 pages, |
LN7301S laser light source LASER 3mW LN7301S abstract |
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| Abstract: SONY 635nm Red Laser Diode Description The SLD1132VS SLD1132VS is a red laser diode designed for laser , times, compared to the conventional visible laser diode (670nm typ.). Features • Short wavelength , Laser pointers Structure • AIGalnP quantum well structure laser diode • PIN photo diode for optical power output monitor Recommended Optical Power Output 3mW SLD1132VS SLD1132VS Absolute Maximum Ratings • , 50 70 mA Operating current lop Po = 3mW 60 80 mA Operating voltage Vop Po = 3mW 2.4 3.0 V ... | OCR Scan |
6 pages, |
SLD1132VS photo diode 635nm infrared laser diode 670NM Laser-Diode SLD1132VS abstract |
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| Abstract: TYPICAL MAX. TEST CONDITION Lasing Wavelength (nm) p 630 635 645 PO=3mW Threshold Current (mA) Ith 25 35 45 PO=3mW Operation Current (mA) Iop 30 45 60 PO=3mW Operation Voltage (V) Vop 2.0 2.2 2.7 PO=3mW Monitor Current (uA) Im 1 , Divergence // (º) // 8 10 11 PO=3mW Beam Divergence (º) 25 31 40 PO=3mW As * 11 * PO=3mW, NA=0.4 Astigmatism (um) BottomView Pin Location PIN ... | Original |
1 pages, |
LASER 3mW datasheet abstract |
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| Abstract: TYPICAL MAX. TEST CONDITION Lasing Wavelength (nm) p 630 635 645 PO=3mW Threshold Current (mA) Ith 25 35 45 PO=3mW Operation Current (mA) Iop 30 45 60 PO=3mW Operation Voltage (V) Vop 2.0 2.2 2.7 PO=3mW Monitor Current (uA) Im 1 , Divergence // (º) // 8 10 11 PO=3mW Beam Divergence (º) 25 31 40 PO=3mW As * 11 * PO=3mW, NA=0.4 Astigmatism (um) BottomView Pin Location PIN ... | Original |
1 pages, |
LASER 3mW datasheet abstract |
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| Abstract: Applications • General purpose laser printers • Information processing equipment Absolute Maximum Ratings (Tc=25°C) Parameter Symbol Ratings Units Optical power output Po 5 mW Reverse voltage Laser VR 2 V , MIN TYP MAX Threshold current Ith - - 40 70 mA Operating current lop Po=3mW - 50 80 mA Operating voltage Vop Po=3mW - 1.75 2.2 V Wavelength*2 AP Po=3mW 770 780 795 nm Monitor current Im Po=3mW Vr=15V - 0.4 - mA Radiation characteristics Angle3 Parallel to junction en Po=3mW 8 11 16 deg ... | OCR Scan |
1 pages, |
LT026MS LT026MS abstract |
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| Abstract: General purpose laser printers • Information processing equipment Absolute Maximum Ratings (Tc=25°C) Parameter Symbol Ratings Units Optical power output Po 5 mW Reverse voltage Laser VR 2 V PIN 30 , Threshold current Ith - - 50 80 mA Operating current lop Po=3mW - 65 100 mA Operating voltage Vop Po=3mW - 1.75 2.2 V Wavelength*2 AP Po=3mW 770 780 790 nm Monitor current Im Po=3mW VR=15V 0.3 0.9 1.6 mA Radiation characteristics Angle3 Parallel to junction en Po=3mW 8 11 16 deg Perpendicular ... | OCR Scan |
1 pages, |
LT026MF LT026 LT026MD 0037GS LT026MD/MF 0037GS abstract |
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| Abstract: MITSUBISHI LASER DIODES ML4XX23 ML4XX23 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML40123N ML40123N,ML44123N ML44123N DESCRIPTION FEATURES ML4xx23 series are AlGaAs laser diodes which provide a stable, single transverse mode ocillation Output 3mW(CW) Built-in monitor photodiode O MQW * active layer with emission wavelength of 785nm and standard continuous light output of 3mW. Low droop , production APPLICATION and characteristics uniformity. laser beam printing, digital copy ABSOLUTE ... | Original |
2 pages, |
ML4XX23 ML44123N ML40123N Photodiode mitsubishi photodiode ML4XX23 abstract |
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