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Part Manufacturer Description Datasheet BUY
VLM-635-01-LPA Quarton Inc LASER MODULE 635NM 3MW visit Digikey
VLM-635-02-LPA Quarton Inc LASER MODULE 635NM 3MW W/ADJ visit Digikey
VLM-650-02-LPA Quarton Inc LASER MODULE 655NM 3MW W/ADJ visit Digikey
D7805I US-Lasers Inc LASER DIODE 780NM 5MW visit Digikey
D8085I US-Lasers Inc LASER DIODE 808NM 5MW visit Digikey
D405-120 US-Lasers Inc LASER DIODE 405NM 120MW visit Digikey

LASER+3mW

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: light output power of 3mW for Laser Beam Printer, industrial optical module and sensor application , TO-18 (5.6mm) - Optical Power Output : 3mW CW - Built-in Photo Diode for Monitoring Laser Diode , ±2.0 ±3.0 0.45 ±80 10 10 Unit mW mA mA V mW/mA Condition Po=3mW Po=3mW 2mW/I(3mW)-I(1mW) p nm deg deg deg deg mA um um % Po=3mW Po=3mW Po=3mW Po=3mW Po=3mW Po=3mW Po=3mW Po=3mW Po=3mW Laser Components
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LCQ7853S5-M 780nm laser diode LCQ7853S5-N/M/P LCQ7853S5-N LCQ7853S5-P
Abstract: optical power output monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings · Optical , Operating current Iop Po = 3mW 60 80 mA Operating voltage Vop Po = 3mW 2.4 3.0 V Wavelength Po = 3mW 625 635 645 nm 24 32 40 degree 5 7 , Radiation angle Perpendicular // Position Positional accuracy Parallel Po = 3mW X, Y, Z Angle Po = 3mW Differential efficiency D Po = 3mW Astigmatism As Sony
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SLD1132VS photo diode 635nm 670NM Laser-Diode note application laser diode red laser diode M-274 E94Y01C98-PS
Abstract: monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings · Optical power output Po · Reverse , Position Angle Ith Iop Vop // X, Y, Z D As Imon Po = 3mW | Z // ­ Z | Po = 3mW, Vr = 5V 0.05 0.10 0.15 0.35 Po = 3mW Po = 3mW Po = 3mW Po = 3mW Po = 3mW 625 24 5 Symbol Conditions Min. Typ. 50 60 2.4 635 32 , field pattern (FFP) Po = 3mW, Tc = 25°C Po ­ Optical power output [mW] 5 40°C Imon 3 TC = 0 , Monitor current vs. Temperature characteristics 0.4 PO = 3mW Ith ­ Threshold current [mA] Im ­ Laser Components
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laser diode chip 635nm
Abstract: Power Output 3mW Absolute Maximum Ratings (Tc = 25°C) · Optical power output POmax 5 · Reverse voltage , Perpendicular Parallel Position Angle Ith Iop Vop // X, Y, Z // D As Imon PO = 3mW | Z// ­ Z | PO = 3mW, VR = 5V 0.08 0.15 0.45 32 0.20 PO = 3mW PO = 3mW PO = 3mW PO = 3mW PO = 3mW 660 24 7 Symbol Conditions Min , pattern (FFP) PO = 3mW, TC = 25°C // 4 2 1 0 0 20 40 60 80 ­60 ­40 ­20 0 20 , 0.4 PO = 3mW Imon ­ Monitor current [mA] 100 Ith ­ Threshold current [mA] 0.3 0.2 0.1 Sony
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SLD1121VS E93821C1X-PS
Abstract: Application : CD-P, CD-R 0 Features â'¢ Lasing wavelength : Xp = 780nm â'¢ Optical output power : Po = 3mW , current lop Po = 3mW 46 55 mA Operating voltage Vop Po = 3mW 1.9 2.3 v Monitor current Im Po = 3mW 0.1 0.2 0.5 mA Lasing wavelength X Po = 3mW 770 788 810 nm e // Po = 3mW 10 12.5 14 degree Beam divergence e i Po = 3mW 20 36 40 a e // Po = 3mW ± 1.5 Beam angle accuracy a e i Po = 3mW ± 3.0 Positional accuracy ax,ay,az Po = 3mW ± 60 um Differential efficiency ri 0.2 0.4 0.6 mW/mA -
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SLD63518240J Melles Griot 06 DLD 201 SLD65018371 Melles Griot Laser Diode driver SLD78018261 SLD6501837 low noise, 780nm, 5mw SL063518240 SL06351824CC SL063618260 SL0836182 SLD63S1S3SD
Abstract: : Xp = 780nm â'¢ Optical output power : Po = 3mW (CW) â'¢ Package type : TO-18 [ 0 5.6 ] â , Po 3 mW Threshold current Ith 40 50 mA Operating current lop Po = 3mW 46 55 mA Operating voltage Vop Po = 3mW 1.9 2.3 V Monitor current Im Po = 3mW 0.1 0.2 0.5 mA Lasing wavelength X Po = 3mW 770 788 810 nm e // Po = 3mW 10 12.5 14 degree Beam divergence e i Po = 3mW 20 36 40 a e // Po = 3mW ± 1.5 Beam angle accuracy a e i Po = 3mW ± 3.0 Positional accuracy ax,ay,az Po = -
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SLD65018260 circuits barcode scanner 100mw laser diode 650nm barcode scanner samsung laser diode Melles Griot low noise 650nm laser diode sensor SLD63518240 SLD63518240C SLD63518250 SLD63518260 SLD63518350 SLD65018250ST
Abstract: 3mW Absolute Maximum Ratings · Optical power output Pomax 5 mW · Reverse voltage VR LD 2 V PD 15 V · , Parallel Position Angle Ith Iop Vop // X, Y, Z D As Imon Po = 3mW | Z // ­ Z | Po = 3mW, Vr = 5V 0.05 0.10 0.15 0.35 Po = 3mW Po = 3mW Po = 3mW Po = 3mW Po = 3mW 625 24 5 Symbol Conditions Min. Typ. 50 60 , (FFP) Po = 3mW, Tc = 25°C Po ­ Optical power output [mW] 5 40°C Imon 3 TC = 0°C 25°C 40 , . Temperature characteristics 0.4 PO = 3mW Ith ­ Threshold current [mA] Im ­ Monitor current [mA] 100 Sony
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E94Y01D18-PS
Abstract: optical power output monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings · Optical , Operating current Iop Po = 3mW 60 80 mA Operating voltage Vop Po = 3mW 2.4 3.0 V Wavelength Po = 3mW 625 635 645 nm 24 32 40 degree 5 7 , Radiation angle Perpendicular // Position Positional accuracy Parallel Po = 3mW X, Y, Z Angle Po = 3mW Differential efficiency D Po = 3mW Astigmatism As Sony
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Abstract: power output monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings · Optical power , en AX, AY, A Z A < j> / / Po = 3mW Po = 3mW Po = 3mW Po = 3mW 625 24 5 60 2.4 635 32 7 Po = 3mW ±3 ±4 Differential efficiency Astigmatism Monitor current 7D As Imon Po = 3mW IZ//-Z-L 1 0.15 0.35 0.8 20 Po = 3mW, Vr = 5V 0.05 0.10 0.30 Handling Precautions , characteristics 0.4 Po=3mW 2001 - < E , c P 100 < £ c 0.3 2 0 n C O < D è 2 4 > t 3 -
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SONY 01A laser sony sony lasers diode
Abstract: wavelength of 780nm and standard continuous light output of 3mW. ML4XX23 is produced by the MOCVD crystal , current CW,Po = 3mW â'" 40 70 mA Vop Operating voltage CW,Po = 3mW â'" 2.0 2.5 V V Slope efficiency CW 0.08 0.15 0.25 mW/mA Xp Center Wavelength CW,Po = 3mW 770 785 800 nm en Beam divergence angle (parallel) CW,Po = 3mW 9 11 15 deg. e ± Beam divergence angle (perpendicular) CW,Po = 3mW 22 29 36 deg. Im Monitoring output current (photodiode) CW,Po = 3mW,vrd = 1 V,Rl* = 10Q â'" 0.6 mA Id Dark -
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780nm 5v 3mW laser diode 2 Wavelength Laser Diode APX-100 LASER 3mW
Abstract: emitting light areas lase independently and emit 3mW at operating currents of around 40mA. Both the , Operating current CW, Poâ'"3mW â'" 40 70 mA VOP Operating voltage (Laser diode) CW, Poâ'"3mW â'" t. 8 2.5 V Po Light output CW, lF=lth+10mA â'" 3 â'" mW Ap Laslng wavelength CW, P0=3mW 765 780 795 nm eâ'ž Full angle at half maximum CW, Po=3mW 8 ti 15 deg. e j. 20 33 45 deg. 'm Monitoring output current CW, P0=3mW Vrdâ'"IV RL=10(l(Note3) 0.15 0.35 0.7 mA lo Dark current (Photodiode) v8D=iov - â'" 0-5 M -
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ML4708N 780nm 5MW laser diodes MITSUBISHI example 00140A7
Abstract: P0 = 3mW 20 35 40 mA Operating voltage Vop P0 = 3mW 2.0 2.5 3.0 V Oscillation wavelength P0 = 3mW 660 670 680 nm Radiation angle Horizontal direction e/i P0 = 3mW 6 8 11 deg. Vertical direction e/1 P0 = 3mW 25 30 40 deg. PIN dark current id VR (PIN) = 15 V 0.1 HA PIN photo current ip P0=3mW, VR (PIN) = 5V 0.2 mA Optical axis X direction ex P0 = 3mW -2.0 +2.0 deg. accuracy Y direction ey P0 = 3mW -3.0 +3.0 deg. Droop*2 Dr P0 = 3mW, f = 600Hz, dutylO% to 90% 10 % Oscillation mode -
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LN9R05MS LN9R05NS semiconductor laser LN9R05MS/NS
Abstract: Operating current lop P0 = 3mW 20 35 45 mA Operating voltage Vop P0 = 3mW 2.0 2.5 3.5 V Oscillation wavelength P0 = 3mW 665 670 680 nm Radiation angle Horizontal direction eâ'ž* P0 = 3mW 6 8 11 deg. Vertical direction e/ P0 = 3mW 25 30 40 deg. PIN dark current id VR (PIN) = 15 V 0.1 HA PIN photo current ip Pq = 3mW, VR (PIN) = 5V 0.2 mA Optical axis X direction ex P0 = 3mW -2.0 +2.0 deg. accuracy Y direction ey P0 = 3mW -3.0 +3.0 deg. Oscillation mode Single horizontal mode 9// and -
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Abstract: stable, single transverse mode ocillation Output 3mW(CW) Built-in monitor photodiode O MQW * active layer with emission wavelength of 785nm and standard continuous light output of 3mW. Low droop , Thereshold current CW - Iop Operation current CW,Po=3mW - 40 70 Vop Operating voltage Slope efficiency CW,Po=3mW 2.5 V p Peak wavelength 0.08 770 2.0 0.15 785 0.25 800 mW/mA nm Beam divergence angle (parallel) CW,Po=3mW 9 11 15 deg. CW Mitsubishi
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ML40123N ML44123N mitsubishi photodiode Photodiode
Abstract: 45 60 mA 52 70 mA Threshold current Ith Operating current Iop PO = 3mW Operating voltage Vop PO = 3mW 1.7 1.9 2.5 V Wavelength PO = 3mW 760 780 800 nm Monitor current Im PO = 3mW, VR = 5V 0.08 0.15 0.4 mA 20 32 , accuracy Position X, Y, Z Angle PO = 3mW PO = 3mW Differential efficiency D PO = 3mW Astigmatism AS PO = 3mW | Z// ­ Z | Signal to noise ratio S/N fC = 7.5MHz Sony
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SLD104AU SLD104U AlGaAs laser diode C6802 IEC60825-1 low noise, 780 nm, 5.6 mm, 5 mw low noise, 780 nm, 7 mw E89418C17-PS M-259
Abstract: CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW],RMS(-20dB) CW, Po=5mW[3mW] CW, Po=5mW[3mW] Ib=Ith,Po=5mW[3mW],10-90% CW, Po=5mW[3mW], VRD=1V VRD=10V VRD=10V, f=1MHz CW, PL=3mW,SI10/125 CW, PL=3mW,SI10/125 Min. 3 10 -0.15[0.1] 1520 -0.1 -[0.2] [4.7] Typ. 10 30 1.1 Mitsubishi
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ML920J6S ML920K6S ML925B6F ML925C6F
Abstract: 3mW Absolute Maximum Ratings (Tc = 25°C) · Optical power output POmax 5 · Reverse voltage VR LD , 40 60 mA Threshold current Ith Operating current Iop PO = 3mW 50 70 mA Operating voltage Vop PO = 3mW 2.2 2.8 V Wavelength PO = 3mW 660 670 680 , Parallel PO = 3mW X, Y, Z Angle // PO = 3mW Differential efficiency D PO = 3mW Astigmatism As | Z// ­ Z | Monitor current Imon PO = 3mW, VR = 5V ­2­ 0.15 0.45 32 Sony
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Abstract: Wavelength Monitor current Symbol Ith Iop Vop Im PO = 3mW PO = 3mW PO = 3mW PO = 3mW, VR = 5V 1.7 760 0.08 20 PO = 3mW 9 Condition Min. Typ. 45 52 1.9 780 0.15 32 17 Tc: Case temperature Max. 60 70 2.5 800 , Parallel // (F. W. H. M.) Asymmetry SR 1 Positional accuracy Position Angle X, Y, Z D AS PO = 3mW PO = 3mW PO = 3mW | Z// ­ Z | fC = 7.5MHz f = 30kHz PO = 4mW VR = 5V VR = 5V, f = 1MHz 88 0.2 0.45 ±150 , field pattern (FFP) PO = 3mW 50 45 Radiant intensity (optional scale) 0.5 // 10 ­10 0 Sony
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Abstract: optical power output monitor Recommended Optical Power Output 3mW SLD1132VS Absolute Maximum Ratings , Threshold current Ith 50 70 mA Operating current lop Po = 3mW 60 80 mA Operating voltage Vop Po = 3mW 2.4 3.0 V Wavelength A Po = 3mW 625 635 645 nm Radiation angle Perpendicular e i Po = 3mW 24 32 40 degree Parallel en 5 7 12 degree Positional accuracy Position AX, AY, AZ Po = 3mW ±80 |jm Angle A // ±3 degree A ±4 degree Differential efficiency 7D Po = 3mW 0.15 -
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infrared laser diode E94Y01A5Z
Abstract: forward current exceeding threshold values, and emit light power of about 3mW/facet at an operating , '" 20 40 mA fop Operating current CW, Poâ'"3mW â'" 30 50 mA Vop Operating voltage (Laser diode) CW, Po=3mW â'" 1.8 2.5 V Po Light output CW, lF=lfh+10mA â'" 3 â'" mW Ap Lasing wavelength CW. Po=3mW 795 815 905 nm eâ'ž Full angle at hall maximum CW, P0=3mW 8 11 18 deg. ii 20 30 50 deg. Im Monitoring output current CW, Po=3mW Vhdâ'"1V RL=10fl(Note 2) 0.1 0.3 0.7 mA lo Da/k current (Photodiode) Vnoâ -
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ML3101 ML3401 ML3411 34182 laser diode with rise time 0.4ns 100MH 1300MH
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