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Part : LASERDISPLPL90AXP Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €155.8074 Price Each : €239.1304
Part : EZ LASER RGFX Supplier : CHAUVET Manufacturer : Newark element14 Stock : 3 Best Price : $99.99 Price Each : $99.99
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LASER 3mW

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: LCQ7853S5-N/M/P AlGaAs Laser Diode Ver.2 2004 OVERVIEW LCQ7853S5-N/M/P is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 3mW for Laser Beam Printer, industrial optical module and sensor application APPLICATION - Laser Beam Printer - Sensor FEATURES - Visible Light Output - Package Type : : p = 780 nm TO-18 (5.6mm) - Optical Power Output : 3mW CW - Built-in Photo Diode for Monitoring Laser Diode Laser Components
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LCQ7853S5-M 780nm laser diode LCQ7853S5-N LCQ7853S5-P
Abstract: SLD1132VS 635nm Red Laser Diode Description The SLD1132VS is a red laser diode designed for laser pointers. Its wavelength (635nm typ.) is shortened by 35nm and visibility is increased by approximately 7 times, compared to the conventional visible laser diode (670nm typ.). M-274 Features · , Applications Laser pointers Structure · AlGaInP quantum well structure laser diode · PIN photo diode for optical power output monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings · Optical Sony
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photo diode 635nm 670NM Laser-Diode note application laser diode red laser diode E94Y01C98-PS
Abstract: SLD1132VS 635nm Red Laser Diode Description The SLD1132VS is a red laser diode designed for laser , times, compared to the conventional visible laser diode (670nm typ.). Features · Short wavelength (635nm typ.) · Small package (5.6) · Fundamental traverse/single longitudinal mode Applications Laser pointers Structure · AlGaInP quantum well structure laser diode · PIN photo diode for optical power output monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings · Optical power output Po · Reverse Laser Components
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laser diode chip 635nm
Abstract: SLD1121VS 5mW Visible Laser Diode Description The SLD1121VS is a red laser diode designed for bar , quantum well structure laser diode · PIN photo diode for optical power output monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings (Tc = 25°C) · Optical power output POmax 5 · Reverse voltage , Perpendicular Parallel Position Angle Ith Iop Vop // X, Y, Z // D As Imon PO = 3mW | Z// ­ Z | PO = 3mW, VR = 5V 0.08 0.15 0.45 32 0.20 PO = 3mW PO = 3mW PO = 3mW PO = 3mW PO = 3mW 660 24 7 Symbol Conditions Min Sony
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E93821C1X-PS
Abstract: Astigmatism As Po = 3mW - - - um [ sld78018261 1 - 20 - éÉ¡SB^ Samsung Semiconductor Laser 16 , Astigmatism As Po = 3mW - - - lam [ SLD78018262C 1 - 22 - éÉ¡SB^ Samsung Semiconductor Laser 18 , 3mW - - - |j,m [ SLD78018271D 1 - 23 - éÉ¡SB^ Samsung Semiconductor Laser 19. SLD78018360P 0 , éfl^F* Samsung Semiconductor Laser - Contents - I«] Generai handling , Ho* to reed the pi ft number - Mumbling .â'". l«l Red laser - 635nm 1 -
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SLD63518240J Melles Griot 06 DLD 201 SLD65018371 Melles Griot Laser Diode driver SLD78018261 SLD6501837 low noise, 780nm, 5mw SL063518240 SL06351824CC SL063618260 SL0836182 SLD63S1S3SD
Abstract: .5 ® Red laser - 635nm 1. SLD63518240 for Measuring instrument , ® Red laser - 650nm 7. SLD65018250ST for Barcode Scanner / Pointer , .19 ® Infrared laser - 780nm 15. SLD78018261 for CD-P / CD-R , .21 17. SLD78018262C for LSU (Laser printer , ) .23 19. SLD78018360P for LSU (Laser printer -
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SLD65018260 circuits barcode scanner 100mw laser diode 650nm barcode scanner samsung laser diode Melles Griot low noise 650nm laser diode sensor SLD63518240C SLD63518250 SLD63518260 SLD63518350 SLD65038250ST
Abstract: SLD1132VS 635nm Red Laser Diode For the availability of this product, please contact the sales office. Description The SLD1132VS is a red laser diode designed for laser pointers. Its wavelength , conventional visible laser diode (670nm typ.). Features · Short wavelength (635nm typ.) · Small package (5.6) · Fundamental traverse/single longitudinal mode Applications Laser pointers Structure · AlGaInP quantum well structure laser diode · PIN photo diode for optical power output monitor Recommended Optical Power Output Sony
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E94Y01D18-PS
Abstract: SLD1132VS 635nm Red Laser Diode Description The SLD1132VS is a red laser diode designed for laser pointers. Its wavelength (635nm typ.) is shortened by 35nm and visibility is increased by approximately 7 times, compared to the conventional visible laser diode (670nm typ.). M-274 Features · , Applications Laser pointers Structure · AlGaInP quantum well structure laser diode · PIN photo diode for optical power output monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings · Optical Sony
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Abstract: SONY 635nm Red Laser Diode Description The SLD1132VS is a red laser diode designed for laser , times, compared to the conven tional visible laser diode (670nm typ.). Features · Short wavelength , Laser pointers Structure · AIGalnP quantum well structure laser diode · PIN photo diode for optical power output monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings · Optical power , en AX, AY, A Z A < j> / / Po = 3mW Po = 3mW Po = 3mW Po = 3mW 625 24 5 60 2.4 635 32 7 Po = -
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SONY 01A laser sony sony lasers diode
Abstract: MITSUBISHI LASER DIODES ML4XX23 SERIES AIGaAs LASER DIODES TYPE NAME DISCRETION ML4XX23 is a AIGaAs laser diodes which provides a stable, single transverse mode oscillation with emission wavelength of 780nm and standard continuous light output of 3mW. ML4XX23 is produced by the MOCVD crystal , performance, highly reliable, and long life semiconductor laser. FEATURES â'¢Low droop* â'¢Small astigmatic , photodiode APPLICATION Laser beam printing, laser beam copy * Droop is a characteristics of dropping of -
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780nm 5v 3mW laser diode 2 Wavelength Laser Diode APX-100
Abstract: Operating current CW, Poâ'"3mW â'" 40 70 mA VOP Operating voltage (Laser diode) CW, Poâ'"3mW â'" t. 8 2.5 V , -3mW -ImW â'"30 0 30 Off-axis angle (deg.) lil Monitoring output The laser diodes emit beams ,  * MITSUBISHI (DISCRETE SC) MITSUBISHI LASER DIODES ML4XX8 SERIES FOR OPTICAL INFORMATION , are AIGaAs laser diodes having two light emitting areas optically and electrically separated, the two emitting light areas lase independently and emit 3mW at operating currents of around 40mA. Both the -
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ML4708N 780nm 5MW laser diodes MITSUBISHI example 00140A7
Abstract: Semiconductor Laser Panasonic LN9R05MS / NS Red Light Semiconductor Laser â  Outline The LN9R05MS/NS, a visible light semiconductor laser is a red semiconductor laser which can function as a high-performance light source for data processing devices such as bar code scanners, laser beam printers, and optical disks, as well as measuring devices such as position sensors, and display devices such as laser pointers. High-precision MOVPE is used as the crystal growth method. The laser structure is optimized -
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LN9R05NS semiconductor laser
Abstract: Semiconductor Laser Panasonic LN9R05MS.P Red Light Semiconductor Laser â  Outline The LN9R05MS.P, a visible light semiconductor laser is a red semiconductor laser which can function as a high-performance light source for display devices such as laser pointers. â  Features â'¢ Oscillating wavelength , Radiant power Po 5 mW Reverse voltage Laser VR 2 V PIN Vr(PIN) 30 V Power dissipation I'd (PIN) 60 , Operating current lop P0 = 3mW 20 35 45 mA Operating voltage Vop P0 = 3mW 2.0 2.5 3.5 V Oscillation -
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Abstract: MITSUBISHI LASER DIODES ML4XX23 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML40123N,ML44123N DESCRIPTION FEATURES ML4xx23 series are AlGaAs laser diodes which provide a stable, single transverse mode ocillation Output 3mW(CW) Built-in monitor photodiode O MQW * active layer with emission wavelength of 785nm and standard continuous light output of 3mW. Low droop , production APPLICATION and characteristics uniformity. laser beam printing, digital copy ABSOLUTE Mitsubishi
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mitsubishi photodiode Photodiode
Abstract: SLD104AU AlGaAs Laser Diode Description The SLD104AU is a AlGaAs laser diode developed for , package (5.6mm) Structure · AlGaAs double hetero-type laser diode · PIN photo diode for laser optical , 45 60 mA 52 70 mA Threshold current Ith Operating current Iop PO = 3mW Operating voltage Vop PO = 3mW 1.7 1.9 2.5 V Wavelength PO = 3mW 760 780 800 nm Monitor current Im PO = 3mW, VR = 5V 0.08 0.15 0.4 mA 20 32 Sony
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SLD104U AlGaAs laser diode C6802 IEC60825-1 low noise, 780 nm, 5.6 mm, 5 mw low noise, 780 nm, 7 mw E89418C17-PS M-259
Abstract: MITSUBISHI LASER DIODES ML9XX6 SERIES Notice: Some parametric limits are subject to change. InGaAsP ­ MQW ­ FP LASER DIODES TYPE NAME DESCRIPTION ML920J6S, ML920K6S ML925B6F, ML925C6F , lens cap : ML920K6S, ML925C6F ML9XX6 series are InGaAsP laser diodes which provide a stable, single , output power Laser reverse voltage PD reverse voltage PD forward current Operation temperature Storage , CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW],RMS(-20dB) CW, Po Mitsubishi
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Abstract: SLD1121VS 5mW Visible Laser Diode For the availability of this product, please contact the sales office. Description The SLD1121VS is a red laser diode designed for bar code readers and measuring , structure laser diode · PIN photo diode for optical power output monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings (Tc = 25°C) · Optical power output POmax 5 · Reverse voltage VR LD , 40 60 mA Threshold current Ith Operating current Iop PO = 3mW 50 70 mA Sony
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Abstract: SLD104AU AlGaAs Laser Diode For the availability of this product, please contact the sales office. Description The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the , laser diode · PIN photo diode for laser optical power output monitor Absolute Maximum Ratings (Tc = 25 , Wavelength Monitor current Symbol Ith Iop Vop Im PO = 3mW PO = 3mW PO = 3mW PO = 3mW, VR = 5V 1.7 760 0.08 20 PO = 3mW 9 Condition Min. Typ. 45 52 1.9 780 0.15 32 17 Tc: Case temperature Max. 60 70 2.5 800 Sony
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Abstract: SONY 635nm Red Laser Diode Description The SLD1132VS is a red laser diode designed for laser , times, compared to the conventional visible laser diode (670nm typ.). Features â'¢ Short wavelength , Laser pointers Structure â'¢ AIGalnP quantum well structure laser diode â'¢ PIN photo diode for optical power output monitor Recommended Optical Power Output 3mW SLD1132VS Absolute Maximum Ratings , Threshold current Ith 50 70 mA Operating current lop Po = 3mW 60 80 mA Operating voltage Vop Po = -
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infrared laser diode E94Y01A5Z
Abstract: '" 20 40 mA fop Operating current CW, Poâ'"3mW â'" 30 50 mA Vop Operating voltage (Laser diode) CW, Po=3mW , MITSUBISHI (DISCRETE SO 31E D MITSUBISHI LASER DIODES ML3XX1 SERIES 31E D B ÃGmG3S M BIMITS , ML3XX1 are AlGaAs laser diodes emitting light beams around 815nm wavelength. They lase by applying forward current exceeding threshold values, and emit light power of about 3mW/facet at an operating , installed in the laser package â'¢ High reliability, long operation life APPLICATION Digital -
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ML3101 ML3401 ML3411 34182 laser diode with rise time 0.4ns 100MH 1300MH
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