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| Part Number | Manufacturer | Description | ||||||
| 1. |  L2721 |
Polyfet RF Devices | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | 39.94 Kb | 2 Pg. | |||
| 2. | L2721 |
Polyfet RF Devices | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | 40.68 Kb | 2 Pg. |
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| 1. |  39.94 Kb • 2 Pages |
Abstract: ... polyfet rf devices. L2721. 11. Single Ended. S02. 40.0 2.0. 50.0. 1.80 C/W. 40. 1.7. 13.00. 2.0. 55. 0.40 8.00. 8 ... L2721. L1C 1 DIE IV. 0. 2. 4. 6. 8. 10. 12. 14. 16. 0 2 4 6 8 10 12 14 16 18 20. VDS IN VOLTS. ID IN AMPS. vg=2v Vg=4v Vg=6v vg ... Labels: L2721 |
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| 2. |  40.68 Kb • 2 Pages |
Abstract: ... L2721. L1C 1 DIE ID, GM vs VG. 1. 10. 100. 0 2 4 6 8 10 12 14 Vgs in Volts. ID. G M. L1C 1DIE CAPACITANCE. 1. 10. 100. 1000 ... L2721. L1C 1 DIE IV. 0. 2. 4. 6. 8. 10. 12. 14. 16. 0 2 4 6 8 10 12 14 16 18 20. VDS IN VOLTS. ID IN AMPS. vg=2v Vg=4v Vg=6v vg ... Labels: L2721 |
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