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Part : KTA1267-Y-AT/P Supplier : KEC Manufacturer : America II Electronics Stock : 6,343 Best Price : - Price Each : -
Part : KTA-1270Y Supplier : KEC Manufacturer : Bristol Electronics Stock : 5,000 Best Price : - Price Each : -
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KTA1266 Datasheet

Part Manufacturer Description PDF Type
KTA1266 Korea Electronics General Purpose Transistor Original
KTA1266 Korea Electronics General Purpose Transistor Original
KTA1266 Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan
KTA1266 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
KTA1266 N/A Shortform Data and Cross References (Misc Datasheets) Scan
KTA1266L Korea Electronics Low Noise Transistor Original
KTA1266L Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan

KTA1266

Catalog Datasheet MFG & Type PDF Document Tags

KTA1266 transistor

Abstract: KTA1266 WEITRON KTA1266 PNP Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : â'¢ Excellent hFE Linearity â'¢u Low noise TO-92 MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage , 200 - 400 Marking WEITRON hpp://www.weitron.com.tw 1/3 04-Oct-2010 KTA1266 Typical Characteristics WEITRON hpp://www.weitron.com.tw 2/3 04-Oct-2010 KTA1266 TO-92 Outline Dimensions
Weitron
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KTA1266 transistor 270TYP

LM8550

Abstract: KTD2026 KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo KTA1 023 2N2906 Motorola 2N3906 , Sanyo KTA1225D 2SB628 NEC KTA1659A 2SA539 NEC KTA1266 2SA1200 Toshiba KTA1660 2SA1552 Sanyo KTA1225L 2SB631K Sanyo KTB631K 2SA555 Fujitsu KTA1266 , KTA1023 2SA564A Matsushita KTA1266 2SA1203 Toshiba KTA1663 2SA1564 Sanyo KRA107M 2SB649/A Hitachi 2SA574 JRC KTA1266 2SA1204 Toshiba KTA1001 2SA1576
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LM8550 KTD2026 2SC2320 equivalent 2sc2240 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A

A1266

Abstract: transistor a1266 SEMICONDUCTOR KTA1266 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K 1 816 2 A1266 GR No. 3 4 Item Marking Description KEC K KEC CORPORATION Lot No. 816 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week Device Name KTA1266 hFE Grade 2005. 4. 18 A1266 GR O, Y, GR Revision No : 0 1/1 -
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transistor a1266 A1266 Y A-1266 A1266GR A1266 GR a1266 transistor

KTA1266 transistor

Abstract: KTA1266. transistor KTA1266 KTA1266 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25) 2. COLLECTOR Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE
WEJ Electronic
Original
KTA1266. transistor KTA1266 GR transistor kta1266 kta1266 Y

KTA1266

Abstract: KTA1266 GR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTOR (PNP) TO-92 FEATURES Excellent hFE Linearity Low noise Complementary to KTC3198 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 VCEO Collector-Emitter Voltage , Characteristics KTA1266 Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
Original
Abstract: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.). at f=1kHz. ・Complementary to KTC3198. MAXIMUM RATING (Ta=25â"ƒ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base , ) Classification O:70~140, 2013. 7. 08 Y:120~240, Revision No : 4 GR:200~400 1/2 KTA1266 KEC
Original

KTC3198

Abstract: KTA1266 KTA1266(PNP) TO-92 Transistors 1. EMITTER 2. COLLECTOR 3. BASE TO-92 Features Excellent hFE Linearity Low noise Complementary to KTC3198 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage , hFE(1) O 70-140 Y 120-240 GR 200-400 KTA1266(PNP) TO-92 Transistors Typical Characteristics
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TO92 LOW VCE PNP

KTA1266

Abstract: transistor KTC3198 SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA N : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). K Low Noise : NF=1dB(Typ.). at f=1kHz. MAXIMUM RATING (Ta=25 G D F J Complementary to KTC3198. E H , GR:200 400 1/2 KTA1266 h FE - I C -240 -2.0 -200 3k COMMON EMITTER Ta=25 C
KEC
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transistor KTC3198

KTA1266

Abstract: KTA1266 GR SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N Complementary to KTC3198. D MAXIMUM RATING (Ta=25 F G J Low Noise : NF=1dB(Typ.). at f=1kHz. E K H ) UNIT , O:70 140, 1997. 7. 4 Y:120 Revision No : 1 240, dB GR:200 400 1/2 KTA1266
KEC
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KTA1266

Abstract: KTA1266 GR KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1266 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES â'¢ Excellent Iife Linearity : hFE(2)=80(Typ.) at Vce="6V, Ic=-150mA : hfe(Ic=0.1mA)/hfe(Ic=2mA)=0.95(Typ.). â'¢ Low Noise : NF=ldB(Typ.). at f=lkHz. â'¢ Complementary to KTC3198. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL , /Cr 1/2 KTA1266 le ~ Vce o u 1 COMMON EMITTER Ta=25°C / '-2.0 > r
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OCR Scan
Abstract: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N Complementary to KTC3198. D MAXIMUM RATING (Ta=25 F G J Low Noise : NF=1dB(Typ.). at f=1kHz. E K H ) UNIT , ) Classification O:70 140, 2002. 9. 12 Y:120 Revision No : 2 240, dB GR:200 400 1/2 KTA1266 -
Original
Abstract: SEMICONDUCTOR TECHNICAL DATA KTA1266 e p it a x ia l p la n a r pnp t r a n s i s t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES â'¢ Excellent hFF Linearity : hFF(2)=80(Typ.) at VC =-6V, Ic=-150mA e â'¢ hFE(Ic-0.1mA)/hFE(Ic-2mA)=0.95(Typ.). â'¢ Low Noise : NF=ldB(Typ.). at f=lkHz. â'¢ Complementary to KTC3198. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL , < 3 -
OCR Scan
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTORï¼ PNP ) TOâ'"92 FEATURE Power dissipation PCM : 0.625 Wï¼Tamb=25â"ƒï¼‰ Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range T stg: -55â"ƒ to +150â"ƒ TJ : 150â"ƒ ELECTRICAL CHARACTERISTICSï¼Tamb=25â"ƒ Parameter Symbol 1.EMITTER 2. COLLECTOR 3. BASE 1 2 3 unless Test otherwise Jiangsu Changjiang Electronics Technology
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050TYP

transistor KTC3198

Abstract: SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.). at f=1kHz. ・Complementary to KTA1266. MAXIMUM RATING (Ta=25â"ƒ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO
KEC
Original
Abstract: KTA1266 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS ltd , TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES *ExceUent Hfe Linearity :Hfe(2)=80(Typ) at Vce=-6V, Ic=-150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mA>0.95(Typ). *Low Noise :NF=ldB(iyp.).at M KHz *Complementary toKTC3198 ABSOLUTE MAXIMUM RATINGS a t Tan*-25®C C haracteristic Symbol Rating Unit Colector-Base Voltage Colectoi^ Emitter Voltage Vcbo Vceo -
OCR Scan

CHINA TV FBT

Abstract: transistor 2N3906 smd 2A SOT23 Transistor KTD863, BC858, BC848 KTD863, BC858, BC848 KTA1266, KTN2369,KTC3198 KTA1266, KTN2369,KTC3198 , KTD1028 TO-92L KTA1266 IC(mA) NPN / PNP NPN / PNP 30 100 BC848 / BC858 BC548 , / KTA1266 SW & CVBS buffer application VCC VCC 5V VCC H OUT TR FBT/DY CVBS OUTPUT
KEC
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CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KRC102M KRC112M KTC3194 KTC3197 KTC945B KIA431
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTOR (PNP) TO-92 FEATURES Excellent hFE Linearity Low Noise Complementary to KTC3198 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous Jiangsu Changjiang Electronics Technology
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KTA1266

Abstract: KTA1266GR KTA1266 -0.15A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of â'-Câ' specifies halogen & lead-free FEATURE TO-92 Excellent hFE Linearity Low Noise Complementary to KTC3198 CLASSIFICATION OF hFE (1) Product-Rank KTA1266-O KTA1266-Y KTA1266-GR Range 70~140 120~240 200~400 1Emitter 2Collector 3Base Collector 2 3 REF. Base A B C D E 1 Emitter Millimeter Min. Max. 4.40 4.70 4.30
SeCoS
Original
KTA1266GR
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO â'" 92 KTC3198 TRANSISTOR (NPN) 1.EMITTER FEATURES General Purpose Switching Application Complementary to KTA1266. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbo Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.15 A PC Jiangsu Changjiang Electronics Technology
Original

KTA1266

Abstract: KTA1266. transistor M C C TO-92 P lastic-E n cap su late T ran sisto rs KTA1266 TRANSISTOR(PNP) FEATURES Pcm: 0.625W (Tam b=25` C) I cm ; -0 .15 A V(BR)CBO: -5 0 V i temperature range Tj,T.g: -55" C to + 1 50t: ELECTRICAL CHARACTERISTICS (Tamb=25°C u n l e s s o th e r w is e sp ecified) Collector-base breakdown voltage Cdtoctor-emitter breakdown voltage Emitter>base breakdown voltage CüMeetor cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO V(BR)EBO lc=-100»»A, le=0 lc= -0.1 mA, la
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OCR Scan

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 KTA1204L KTA1225D KTA1225L KTA1241 KTA1242D KTA1242L KTA1243 KTA1266 KTA1266L KTA1267 KTA1267L KTA1268
KEC
Original
alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ROOM3501

transistor cross reference

Abstract: transistor c1008 700 2 6 0.25 100 10 80 ECB KTC3298 KTA1266 NPN 625 -150 -50 -50 70 400 -2 -6 -0.3 -100 -10 80 ECB KTA1266 2SA1300 PNP 750
Micro Commercial Components
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transistor cross reference transistor c1008 NPN C1008 npn transistor c1008 s8550 npn SS8550 cross reference S9011 S9012 S9013 S9014 S9015 S9016

transistor KTC3198

Abstract: KTC3198 SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N Complementary to KTA1266. D MAXIMUM RATING (Ta=25 F G J Low Noise : NF=1dB(Typ.). at f=1kHz. E K H ) UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage
KEC
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ktc3198 transistor ktc3198 gr
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