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KF7N60

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KF7N60

Abstract: kf7n60f Operation Area 102 (KF7N60P) 10µs (KF7N60F) 10µs Drain Current ID (A) 101 Drain Current ID , A KF7N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF7N60P O C F E G B Q I K M L J H P DIM , SYMBOL KF7N60P VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 108 0.87 150 -55150 7 4 20 210 11 4.5 44.6 0.36 600 ±30 7* 4* 20* A F UNIT KF7N60F V V O 1 2 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB A KF7N60F C mJ mJ V/ns W W/ K O B E G DIM MILLIMETERS Maximum Junction
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KF7N60 KF7N60P/F

KF7N60

Abstract: kf7n60f RATING CHARACTERISTIC O SYMBOL UNIT KF7N60P 1 KF7N60F Drain-Source Voltage VDSS , SEMICONDUCTOR KF7N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast switching , V @TC=100â"ƒ IDP 20 20* A KF7N60F 210 mJ EAR 11 mJ O EAS dv/dt , D G S 2013. 5. 03 Revision No : 1 1/7 KF7N60P/F ELECTRICAL CHARACTERISTICS (Tc
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KF7N6