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K9K8G08U1D

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Abstract: K9F4G08U0D K9K8G08U1D K9K8G08U0D K9WAG08U1D datasheet K9K8G08U1D-SCB0/SIB0 K9WAG08U1D-SCB0/SIB0 N.C N.C , : Pb-FREE, Halogen-FREE PACKAGE 48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch) - K9K8G08U1D-SCB0/SIB0 : Pb-FREE , K9K8G08U1D-S K9WAG08U1D-S 2.70 ~ 3.60V X8 TSOP1 Vcc Range Organization PKG Type -4- K9F4G08U0D , =25°C. Not 100% tested. 3) The typical value of the K9K8G08U1D's ISB2 is 20A and the maximum value is 100A. 4 , Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D Advance 4Gb D-die NAND Flash Samsung Electronics
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K9K8G08U0D-SCB0 K9F4G08U0D-SCB0 K9WAG08U1D-SCB0 K9F4G08U0D-S K9WAG08U1D-SCB K9f* 2010
Abstract: - Pin TSOP1 (12 x 20 / 0.5 mm pitch) - K9K8G08U1D-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE 48 - Pin , x 20 / 0.5 mm pitch) 1.3 PRODUCT LIST Part Number K9F4G08U0D-S K9K8G08U0D-S K9K8G08U1D-S , K9K8G08U0D K9WAG08U1D datasheet K9K8G08U1D-SCB0/SIB0 K9WAG08U1D-SCB0/SIB0 N.C N.C N.C N.C N.C R/B2 R/B1 , =25°C. Not 100% tested. 3) The typical value of the K9K8G08U1D's ISB2 is 20A and the maximum value is 100A. 4 , Rev.1.0, Jun. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D 4Gb D-die NAND Flash Samsung Electronics
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K9XXG08XXD-XCB0 k9k8g08u0dscb0 K9K8G08U0D- K9XXG08XXD-XIB0 SAMSUNG 8gb NAND Flash memory K9K8G08U0D-SCB