NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| K9F1208D0B | Samsung Electronics | 64M x 8 Bit NAND Flash Memory |
45 pages, |
Original |  |
|
|||||
| K9F1208D0B-D | Samsung Electronics | 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
46 pages, |
Original | |
|
|||||
| K9F1208D0B-D | Samsung Electronics | 64M x 8 Bit NAND Flash Memory |
45 pages, |
Original | |
|
|||||
| K9F1208D0B-DCB0 | Samsung Electronics | IC FLASH MEM PARL 2.4V TO 2.9V 512MBIT 64MX8 30NS 63TBGA |
45 pages, |
Original | |
|
|||||
| K9F1208D0B-DIB0 | Samsung Electronics | IC FLASH MEM PARL 2.4V TO 2.9V 512MBIT 64MX8 30NS 63TBGA |
45 pages, |
Original | |
|
|||||
| K9F1208D0B-H | Samsung Electronics | 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
46 pages, |
Original | |
|
|||||
| K9F1208D0B-HCB0 | Samsung Electronics | IC FLASH MEM PARL 2.4V TO 2.9V 512MBIT 64MX8 30NS 63FBGA |
45 pages, |
Original | |
|
|||||
| K9F1208D0B-HIB0 | Samsung Electronics | IC FLASH MEM PARL 2.4V TO 2.9V 512MBIT 64MX8 30NS 63FBGA |
45 pages, |
Original | |
|
|||||
| K9F1208D0B-P | Samsung Electronics | 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
46 pages, |
Original | |
|
|||||
| K9F1208D0B-PCB0 | Samsung Electronics | IC FLASH MEM PARL 2.4V TO 2.9V 512MBIT 64MX8 30NS 48TSOP-I |
45 pages, |
Original | |
|
|||||
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 1.70 ~ 1.95V TBGA K9F1208D0B-Y,P TSOP1 2.4 ~ 2.9V K9F1208D0B-D,H TBGA K9F1208U0B-Y K9F1208U0B-Y , K9F1208Q0B K9F1208Q0B K9F1208D0B K9F1208U0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND , office near you. 1 K9F1208Q0B K9F1208Q0B K9F1208D0B K9F1208U0B K9F1208U0B Advance FLASH MEMORY 64M x 8 Bit , Supply - 1.8V device(K9F1208Q0B K9F1208Q0B) : 1.70~1.95V - 2.65V device(K9F1208D0B) : 2.4~2.9V - 3.3V device , storage and other portable applications requiring non-volatility. 2 K9F1208Q0B K9F1208Q0B K9F1208D0B ... | Original |
45 pages, |
K9F1208U0B-Y K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D K9F1208U0B-V K9F1208* technical SAMSUNG K9F1208U0B K9F1208Q0B abstract |
|
|||
| Abstract: K9F1208D0B-Y,P TSOP1 2.4 ~ 2.9V K9F1208D0B-D,H TBGA K9F1208U0B-Y K9F1208U0B-Y,P K9F1208U0B-D K9F1208U0B-D,H TSOP1 2.7 , K9F1208Q0B K9F1208Q0B K9F1208D0B K9F1208U0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND , K9F1208Q0B K9F1208Q0B K9F1208D0B K9F1208U0B K9F1208U0B Preliminary FLASH MEMORY 64M x 8 Bit / 32M x 16 Bit NAND Flash , device(K9F1208D0B) : 2.4~2.9V - 3.3V device(K9F1208U0B K9F1208U0B) : 2.7 ~ 3.6 V · Organization - Memory Cell , applications requiring non-volatility. 2 K9F1208Q0B K9F1208Q0B K9F1208D0B K9F1208U0B K9F1208U0B Preliminary FLASH ... | Original |
46 pages, |
K9F1208U0B-Y K9F1208U0B-V K9F1208U0B-D K9F1208U0B K9F1208Q0B-D K9F1208Q0B K9F1208D0B-Y K9F1208D0B-D K9F1208D0B K9F1208Q0B abstract |
|
|||
| Abstract: FBGA K9F1208D0B-Y,P TSOP1 2.4 ~ 2.9V K9F1208D0B-D,H FBGA K9F1208U0B-Y K9F1208U0B-Y,P K9F1208U0B-D K9F1208U0B-D , K9F1208Q0B K9F1208Q0B K9F1208D0B K9F1208U0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND , office near you. 1 K9F1208Q0B K9F1208Q0B K9F1208D0B K9F1208U0B K9F1208U0B Advance FLASH MEMORY 64M x 8 Bit NAND , ~1.95V - 2.65V device(K9F1208D0B) : 2.4~2.9V - 3.3V device(K9F1208U0B K9F1208U0B) : 2.7 ~ 3.6 V · Organization - , portable applications requiring non-volatility. 2 K9F1208Q0B K9F1208Q0B K9F1208D0B K9F1208U0B K9F1208U0B Advance ... | Original |
45 pages, |
K9F1208U0B-Y K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B K9F1208U0B-D K9F1208U0B-V IC 4093 K9F1208Q0B abstract |
|
|||