NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: UtRAM 128Mb M-die(100nm) & A-die(90nm) Comparison Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Planning & Product Planning & Application Eng. Team Application Eng. Team The Leader in Memory Technology Features Comparison Code K1B2816B2A K1B2816B6M K1B2816B6M CLK Max. 104Mhz Max. 66Mhz Power Saving Modes PAR I-TCSR DPD (Deep Power Down) PAR I-TCSR Length 4 8 16 32 Continuous 4 8 16 256 Sequence Linear ... | Original |
4 pages, |
K1B2816B2A datasheet abstract |
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| Abstract: Technical Note on tBC This Application Note is applied to below products. - K1B5616B2M K1B5616B2M, K1B5616BAM K1B5616BAM, K1B5616BBM K1B5616BBM, K1S5616BCM K1S5616BCM, K1S56161CM K1S56161CM - K1B2816B2A, K1B2816BAA K1B2816BAA, K1B2816BBA K1B2816BBA, K1S2816BCA K1S2816BCA, K1S28161CA K1S28161CA June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Planning & Product Planning & Application Eng. Team Application Eng. Team The Leader in Memory Technology Definition of tBC tBC Burst Start (CLK rising during ADV is ... | Original |
5 pages, |
K1S56161CM K1B5616BBM K1B5616BAM K1B5616B2M bba 1st K1B2816B2A K1S5616BCM K1B2816BAA K1B2816BBA K1S2816BCA K1S28161CA K1B5616B2M abstract |
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| Abstract: Mode, Status & current during Power Up This Application Note is applied to below products. - K1B5616B2M K1B5616B2M, K1B5616BAM K1B5616BAM, K1B5616BBM K1B5616BBM - K1B2816B2A, K1B2816BAA K1B2816BAA, K1B2816BBA K1B2816BBA Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Planning & Product Planning & Application Eng. Team Application Eng. Team The Leader in Memory Technology Status and Current (When S/W MRS is being used & /PS pin is fixed High) Case1 Case2 Vcc/Vccq Vcc/Vccq ... | Original |
4 pages, |
K1B5616BAM K1B5616B2M K1B2816B2A K1B5616BBM K1B2816BAA K1B2816BBA K1B5616B2M abstract |
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| Abstract: Write method & Mode Change This Application Note is applied to below products. - K1B5616B2M K1B5616B2M, K1B5616BAM K1B5616BAM, K1B5616BBM K1B5616BBM - K1B2816B2A, K1B2816BAA K1B2816BAA, K1B2816BBA K1B2816BBA - K1B6416B6C K1B6416B6C, K1B3216BDD K1B3216BDD June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Planning & Product Planning & Application Eng. Team Application Eng. Team The Leader in Memory Technology UtRAM Write Asynchronous Write WC1 A0 Address WC2 A1 A: Address D: Data EOW : End of ... | Original |
8 pages, |
K1B6416B6C K1B5616BAM K1B5616B2M K1B3216BDD K1B2816B2A UtRAM K1B5616BBM K1B2816BAA K1B2816BBA K1B5616B2M abstract |
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