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J211-D74Z ON Semiconductor N-Channel RF Amplifier, TO-92 3L, 2000-FNFLD visit Digikey
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MMBFJ211 ON Semiconductor N-Channel RF Amplifier, 3000-REEL visit Digikey

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J211 Datasheet

Part Manufacturer Description PDF Type
J211 Calogic N-Channel JFET Original
J211 Fairchild Semiconductor N-Channel RF Amplifier Original
J211 InterFET N-Channel silicon junction field-effect transistor Original
J211 Linear Integrated Systems LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Original
J211 Philips Semiconductors N-channel field-effect transistors Original
J211 Siliconix N-Channel JFETs Original
J211 Vishay TRANS JFET N-CH 20MA 3TO-226AA Original
J211 N/A Shortform Transistor PDF Datasheet Scan
J211 N/A Basic Transistor and Cross Reference Specification Scan
J211 N/A Shortform Transistor PDF Datasheet Scan
J211 N/A Shortform Datasheet & Cross References Data Scan
J211 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
J211 N/A Semiconductor Master Cross Reference Guide Scan
J211 National Semiconductor N-Channel JFETs Scan
J211 National Semiconductor N-Channel JFETs Scan
J211 National Semiconductor JFET General Purpose Scan
J211 National Semiconductor Shortform National Semiconductor Datasheet Scan
J211 Siliconix MOSPOWER Design Data Book 1983 Scan
J211 Siliconix PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS Scan
J211 Siliconix FET Design Catalogue 1979 Scan
Showing first 20 results.

J211

Catalog Datasheet MFG & Type PDF Document Tags

62w sot-23

Abstract: J211 °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J211-212 350 2.8 125 357 , J211 / J212 / MMBFJ211 / MMBFJ212 J211 J212 MMBFJ211 MMBFJ212 G G S TO-92 D S , " X 0.06." ã1997 Fairchild Semiconductor Corporation 5-25 J211 / J212 / MMBFJ211 / MMBFJ212 , Interactions Common Drain-Source 5-26 J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier , Current Output Conductance vs. Drain Current 5-27 J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel RF
Fairchild Semiconductor
Original
62w sot-23 N-Channel RF Amplifier J212 rf amplifier MMBFJ211-212

J211

Abstract: 41B SOT23 J211 / J212 / MMBFJ211 /MMBFJ212 National S e m i c o n d u c t o r " Discrete POWER & Signal Technologies J211 J2 1 2 M M B F J 2 1 1 M M B F J 2 1 2 SOT-23 M ark: 6 2W / 6 2 X , , Junction to Case Thermal Resistance, Junction to Ambient J211/J212 625 5.0 83.3 200 Max ` MMBFJ211 350 , OOHORHB Ö7G 7-22 J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel General Purpose Amplifier , ds = 15 V, Id = 1.0 nA J211 J212 -25 -100 -2.5 -4.0 -4.5 -6.0 V pA V V ON CHARACTERISTICS
-
OCR Scan
41B SOT23 J211/J212 S01130 SD113D

J211 jfet siliconix

Abstract: J211 J211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 The J211 is a n-channel , REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW , Low Leakage Maximum Power Dissipation Low Noise Continuous Power Dissipation 360mW J211 , to Source Voltage 25V J211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL , rDS(on) Drain to Source On Resistance 50 IG = 1mA, VDS = 0V J211 DYNAMIC
Micross Components
Original
J211 jfet siliconix

J211 jfet siliconix

Abstract: J211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 The J211 is a n-channel , REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW , Low Leakage Maximum Power Dissipation Low Noise Continuous Power Dissipation 360mW J211 , to Source Voltage 25V J211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL , rDS(on) Drain to Source On Resistance 50 IG = 1mA, VDS = 0V J211 DYNAMIC
Micross Components
Original

j211

Abstract: +150 °C J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 MMBFJ210 MMBFJ211 MMBFJ212 J210 J211 J212 *These ratings are limiting values above which the serviceability of any , mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©1997 Fairchild Semiconductor Corporation J210/J211/J212/MMBFJ210/J211/J212, Rev A 5 (continued) Electrical Characteristics Symbol TA = 25° unless , Parameter Interactions Common Drain-Source J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
Fairchild Semiconductor
Original
J210-212 MMBFJ210-212

J210

Abstract: J211 +150 °C J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 MMBFJ210 MMBFJ211 MMBFJ212 J210 J211 J212 *These ratings are limiting values above which the serviceability of any , 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation J210/J211/J212/MMBFJ210/J211/J212, Rev A , Drain-Source J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued , Current vs. Voltage Noise Voltage vs. Frequency J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
Fairchild Semiconductor
Original
J210 MIXER MARK 210 transistor j210

transistor j210

Abstract: J210 -92 (SOT54) package. s MAM197 CAUTION Marking codes: J210: J210. J211: J211. J212: J212 , 25 °C. 4 6 8 10 VDS (V) J211. Tj = 25 °C. Fig.6 Input characteristics; typical , -800 mV -1 V -1.2 V -1.4 V 16 12 8 8 4 0 -6 -4 -2 0 VGS (V) 0 0 J211. , DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors , Product specification N-channel field-effect transistors J210; J211; J212 FEATURES PINNING -
Philips Semiconductors
Original
marking J212 SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B SCA56

low igss

Abstract: J212 J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM (J211, J212) TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation @ 25 , CHARACTERISTICS J210 J211 MIN TYP MAX MIN TYP MAX J212 UNITS CONDITIONS MIN TYP MAX -100 pA VDS
Linear Integrated Systems
Original
low igss J210 equivalent

JFs sot-23

Abstract: J212 we Semiconductor" J211 J212 TO-92 MMBFJ211 MMBFJ212 SOT-23 Mark: 62W/62X N-Channel General Purpose Amplifier , Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units J211 / J212 'MMBFJ211 Pd , 15 V, VDS = 0 - 100 pA Vgs(oH) Gate-Source Cutoff Voltage Vds = 15 V, Id = 1.0 nA J211 J212 -2.5 - , 0 J211 J212 7.0 15 20 40 mA mA SMALL SIGNAL CHARACTERISTICS {Jfs Common Source Forward Transconductance Vos = 15 V, VQs = 0, f = 1.0 kHz J211 J212 6000 7000 12,000 12,000 Hmhos umhos 9oss Common Source
-
OCR Scan
JFs sot-23 J212 we T092

transistor j210

Abstract: 212 t sot-23 J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 , mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation J210/J211/J212/MMBFJ210/J211/J212, Rev A J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier , Width 300 µS Typical Characteristics Parameter Interactions Common Drain-Source J210 / J211 , J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Typical
Fairchild Semiconductor
Original
212 t sot-23 J210/J211/J212/MMBFJ210/J211/J212
Abstract: J210, J211, J212 / SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM (J211, J212) IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL G HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 D Plastic ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation @25°C Ambient (Derate 3.27 mW/°C) Operating Temperature Range -25V 10mA 360mW -55 to +150 °C S G D S J210, J211 Linear Integrated Systems
Original
JS210
Abstract: J210, J211, J212 SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM (J211, J212) HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS G D S @ 25 °C (unless otherwise stated) Gate-Drain or Gate-Source Voltage Gate , -92 10mA SOT-23 TOP VIEW J210, J211, J212 -25V TOP VIEW SSTJ210, SSTJ211, SSTJ212 360mW Linear Integrated Systems
Original

VNC2

Abstract: -10 J2-11 J2-12 Description 5.0V module supply pin. This pin can be used to provide the 5.0V input , -12 IO10 I/O J2-11 IO11 I/O UART Interface SPI Slave Interface SPI Master , -9, J2-12 uart_rts# Output Request To Send Control Output J2-6, J1-10, J2-11 uart_cts , been transmitted J2-6, J1-10, J2-11 J2-10, J1-6, J1-11 uart_tx_active Description , master to slave Output spi_s1_miso spi_s0_ss# J2-6, J1-10, J2-11 Master In Slave Out
FTDI
Original
VNC2 V2DIP2-32 VNC2-32Q VNCL2-32Q

Siliconix Dual N-Channel JFETs

Abstract: J210 Tem ic Siliconix J210/211/212 N-Channel JFETs Product Summary P a rt N um ber J210 J211 J212 Vg s (oK) (V) - 1 to - 3 -2.5 to -4.5 - 4 to - 6 V(BR)GSS ^ ' ,l ^ -25 -2 5 -2 5 ; gfcM in (m S) 'I 4 6 7 I dss Mi® (mA) 2 7 15 J211, For applications information seeAN104, page 12-21. Features · Excellent High Frequency Gain: J211/212, G ps 12 dB (typ) @ 400 M Hz · Very Low Noise: 3 dB , in M ax J211 M in :/ G ate-Source B reakdow n Voltage G ate-S ource C u to ff Voltage Satu ratio n D
-
OCR Scan
Siliconix Dual N-Channel JFETs 211 siliconix AN104 J211/212 2N5911/5912 U440/441 P-37404--
Abstract: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 J211 J212 PRODUCT SUM M ARY Part Number J2 1 0 J/S S T J211 J /S S T J 2 1 2 SSTJ211 SSTJ212 VGS(off) - 1 to - 3 (V) V (BH , .5 - 4 to -6 FEATURES · Excellent High Frequency Gain: J211/212, Gps 12 dB (typ) @ 400 MHz · , -236 (SOT-23) S STJ211 (Z 1)* S S T J 2 1 2 (Z 2 )* J2 1 0 J211 J212 T op V ie w Top V ie w ·M a rk in g , ISE NOTED) Limits J210 J/S S T J211 J /S S T J 2 1 2 Parameter Static G a te -S o u rc e B re a -
OCR Scan
S-04028-- S-04028--R
Abstract: B 56 9-97 J210, J211 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR â'¢ AUDIO AMPLIFIERS â'¢ GENERAL PURPOSE AMPLIFIERS Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 25 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 360 mW Power Derating J211 J210 At 25°C free air temperature: Min , (972) 487-1287 i F A X (972) 276-3375 Surface Mount - SMP J210, SMP J211 MÛHbflfiô 3 0 0 0 7 7 -
OCR Scan
NJ26L T0-226AA

212 s sot-23

Abstract: 62w sot-23 Fairchild Semiconductor Corporation J211-212 350 2.8 125 *MMBFJ211-212 225 1.8 357 556 , J211 / J212 / MMBFJ211 / MMBFJ212 MMBFJ211 MMBFJ212 J211 J212 G S G S TO , Characteristics Parameter Interactions Common Drain-Source J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel , Transfer Characteristics Leakage Current vs. Voltage J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel , Transadmittance Reverse Transadmittance J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier
Fairchild Semiconductor
Original
212 s sot-23 rf transistor mark code H1 CBVK741B019 F63TNR PN2222N transistor mark igf

VNC2-32

Abstract: V2DIP2-32 bit bit bit bit bit 2 1 0 11 10 J1-4 J1-5 J2-6 J2-7 J2-8 J2-9 J2-10 J2-11 J2-12 IOBUS3 GND , -10 J1-11 J1-12 J2-12 J2-11 IO0 IO4 IO5 IO6 IO7 IO8 IO9 IO10 IO11 I/O I/O I/O I/O I/O I/O I/O I/O I , Description J2-10, J1-6, J1-11 J2-9, J1-8, J1-12 J2-8, J1-9, J2-12 J2-6, J1-10, J2-11 J2-10, J1-6, J1-11 J2-9, J1-8, J1-12 J2-8, J1-9, J2-12 J2-6, J1-10, J2-11 uart_txd uart_rxd uart_rts# uart_cts# uart_dtr , spi_s0_ss# Input J2-6, J1-10, J2-11 Slave chip select spi_s1_ss# Table 3.4 - Data and Control Bus
FTDI
Original
VNC2-32 895-V2DIP2-32

V2DIP2-32

Abstract: usb flash drive circuit diagram -9 J2-10 J2-11 J2-12 Description 5.0V module supply pin. This pin can be used to provide the 5.0V , -12 IO10 I/O J2-11 IO11 I/O UART Interface SPI Slave Interface SPI Master , -9, J2-12 uart_rts# Output Request To Send Control Output J2-6, J1-10, J2-11 uart_cts , been transmitted J2-6, J1-10, J2-11 J2-10, J1-6, J1-11 uart_tx_active Description , master to slave Output spi_s1_miso spi_s0_ss# J2-6, J1-10, J2-11 Master In Slave Out
FTDI
Original
usb flash drive circuit diagram Vdip1
Abstract: LINEAR SYSTEMS Linear Integrated Systems J210. J211. J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs = 7000 Urn ho MINIMUM (J211, J212) HIGH INPUT IMPEDANCE lGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C. ISS = 5pF TYPICAL r ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation 25 , CHARACTERISTICS @ 25°C (unless otherwise noted) SYM BO L I CHARACTERISTICS 1 J210 1 J211 1 J212 i w i ra ra r r c -
OCR Scan
Abstract: J211 / J212 / MMBFJ211 /MMBFJ212 National S e m i c o n d u c t o r " Discrete POWER & Signal Technologies J211 J2 1 2 M M B F J 2 1 1 M M B F J 2 1 2 SOT-23 M ark: 6 2W / 6 2 X , , Junction to Case Thermal Resistance, Junction to Ambient J211/J212 625 5.0 83.3 200 Max ` MMBFJ211 350 , OOHORHB Ö7G 7-22 J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel General Purpose Amplifier , ds = 15 V, Id = 1.0 nA J211 J212 -25 -100 -2.5 -4.0 -4.5 -6.0 V pA V V ON CHARACTERISTICS Texas Instruments
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SLRU005 TPL7407L7-C TPL7407LEVM TPL7407LDR TPL7407L ISO/TS16949

EFE400

Abstract: EFE300M +150 °C J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 MMBFJ210 MMBFJ211 MMBFJ212 J210 J211 J212 *These ratings are limiting values above which the serviceability of any , mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©1997 Fairchild Semiconductor Corporation J210/J211/J212/MMBFJ210/J211/J212, Rev A 5 (continued) Electrical Characteristics Symbol TA = 25° unless , Parameter Interactions Common Drain-Source J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
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EFE300 EFE400 EFE300M EFE400M EFE-300 J2/CMX7161 EFE-400

vnc2

Abstract: u1M code -10 J2-11 J2-12 Description 5.0V module supply pin. This pin can be used to provide the 5.0V input , J2-11 IO11 I/O UART Interface SPI Slave Interface SPI Master Interface Parallel , Control Output J2-6, J1-10, J2-11 uart_cts# Input J2-10, J1-6, J1-11 uart_dtr# Output , bit time after the last bit of a data frame has been transmitted J2-6, J1-10, J2-11 J2-10, J1 , spi_s0_ss# J2-6, J1-10, J2-11 Master In Slave Out Synchronous data from slave to master Input
FTDI
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u1M code ftdi spi example V2DIP1-32 2DIP1-32
Abstract: Remote on/off +V Ch1 +V Ch1 +V Ch1 +V Ch1 +V Ch1 +V Ch1 Do not connect Pin J2-10 J2-11 J2 , Good 0V standby Pin J2-10 J2-11 J2-12 J2-13 J2-14 J2-15 J2-16 J2-17 J2-18 Connection , +V Ch1 +V Ch1 +V Ch1 +V Ch1 Pin J2-8 J2-9 J2-10 J2-11 J2-12 J2-13 J2-14 68892 EFE300 , Ch1 0V Ch1 0V Ch1 0V Ch1 Document Number 68892 Pin J2-8 J2-9 J2-10 J2-11 J2-12 J2 FTDI
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EFE300M

Abstract: J212 -9 J2-10 J2-11 J2-12 Description 5.0V module supply pin. This pin can be used to provide the 5.0V , -12 IO10 I/O J2-11 IO11 I/O UART Interface SPI Slave Interface SPI Master , -9, J2-12 uart_rts# Output Request To Send Control Output J2-6, J1-10, J2-11 uart_cts , been transmitted J2-6, J1-10, J2-11 J2-10, J1-6, J1-11 uart_tx_active Description , master to slave Output spi_s1_miso spi_s0_ss# J2-6, J1-10, J2-11 Master In Slave Out
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EFE400-12 EFE-300M

Vinculum II

Abstract: IO24 ) J2-5 (20) J2-6 (19) J2-7 (18) J2-8 (17) J2-9 (16) J2-10 (15) J2-11 (14) J2-12 (13) IOBUS18 IO18 I/O , -6 J1-8 J1-9 J1-10 J1-11 J1-12 J2-12 J2-11 J2-10 IOBUS0 IOBUS5 IOBUS6 IOBUS12 IOBUS13 IOBUS14 IOBUS15 , -8, J1-12, J2-9 J1-3, J1-9, J2-12, J2-8 J1-10, J2-11, J2-6 J1-6, J1-11, J2-5, J2-10 uart_txd uart_rxd , Request (Data Set Ready Control) Input J1-3, J1-9, J2-12, J2-8 J1-10, J2-11, J2-6 uart_dcd# uart_ri , spi_s1_miso Output Master In Slave Out Synchronous data from slave to master J1-10, J2-11, J2
FTDI
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VNC2-48 Vinculum II IO24 V2DIP1-48

V2DA

Abstract: VDIP1 -7 J2-8 J2-9 J2-10 J2-11 J2-12 Description 5.0V module supply pin. This pin can be used to , J1-12 IO9 I/O J2-12 IO10 I/O J2-11 IO11 I/O UART Interface SPI Slave , -9, J2-12 uart_rts# Output Request To Send Control Output J2-6, J1-10, J2-11 uart_cts , been transmitted J2-6, J1-10, J2-11 J2-10, J1-6, J1-11 uart_tx_active Description , data from master to slave Output spi_s1_miso spi_s0_ss# J2-6, J1-10, J2-11 Master In Slave
FTDI
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V2DA 895-V2DIP1-48
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