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| Part Number | Manufacturer | Description | ||||||
| 1. |  J211 |
Siliconix | MOSPOWER Design Data Book 1983 | 40.91 Kb | 1 Pg. | |||
| 2. | J211 |
Siliconix | PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS | 208.73 Kb | 4 Pg. | |||
| 3. | J211 |
Fairchild Semiconductor | N-Channel RF Amplifier | 191.79 Kb | 6 Pg. | |||
| 4. | J211 |
Siliconix | N-Channel JFETs | 68.78 Kb | 6 Pg. | |||
| 5. | J211 |
Calogic | N-Channel JFET | 22.99 Kb | 2 Pg. | |||
| 6. | J211 |
Philips Semiconductors / NXP Semiconductors | N-channel field-effect transistors | 96.41 Kb | 12 Pg. | |||
| 7. | J211 |
InterFET Corporation | N-Channel silicon junction field-effect transistor | 91.21 Kb | 1 Pg. | |||
| 8. | J211 |
Linear Integrated Systems | LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER | 11.41 Kb | 1 Pg. | |||
| 9. | J211 |
Vishay | TRANS JFET N-CH 20MA 3TO-226AA | 45.84 Kb | 6 Pg. | |||
| 10. | J211 |
Siliconix | FET Design Catalogue 1979 | 31.58 Kb | 1 Pg. |
| « Previous 1 2 Next » |
| 1. |  11.42 Kb • 1 Pages |
Abstract: ... J210, J211, J212. FEATURES HIGH GAIN gfs = 7000μmho MINIMUM (J211, J212) HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS @ 25°C (unless ... Labels: J211 |
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| 2. |  91.21 Kb • 1 Pages |
Abstract: ... J210, J211. N-Channel Silicon Junction Field-Effect Transistor. ¥ Audio Amplifiers ¥ General Purpose Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain ... Labels: J211 |
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| 3. |  191.79 Kb • 6 Pages |
Abstract: ... J210 J211 J212. N-Channel RF Amplifier. This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers ... Labels: J211 |
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| 4. |  96.41 Kb • 12 Pages |
Abstract: ... J210; J211; J212 N-channel field-effect transistors. 1997 Dec 01 2. Philips Semiconductors Product specification. N-channel field-effect transistors J210; J211; J212. FEATURES. • High speed ... Labels: J211 |
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| 5. |  57.99 Kb • 2 Pages |
Abstract: ... are specifically made to comply with the filter corner require-ments of SAE J211 and ISO6487. Model 31875 • 4-Pole Low Pass Butterworth • 20 Corner Frequencies Available • 10 Hz to 80 kHz in 1, 2, 4 ... Labels: J211 |
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| 6. |  614.32 Kb • 13 Pages |
Abstract: ... J211 J212. N-Channel RF Amplifier. This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers ... Labels: J211 |
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| 7. |  11.38 Kb • 1 Pages |
Abstract: ... ‐ J211 ‐ ‐3.15 2.25 M 4.3 M 23 ‐ 3 P 3 P ‐ 0.8. 2N5116 J176 SST176 ‐1.78b 4.7 M 5 M 20 35 14 P 13 P 1.1 P 1.5. Notes: a. These parameters are only important when modeling the JFET as a switch. b. SPICE identifies ... Labels: J211, Application Notes |
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| 8. |  123.11 Kb • 2 Pages |
Abstract: ... Datasheet 2N5397, 2N5398 J210, J211, J212. At 25°C free air temperature: NJ26L Process. Static Electrical Characteristics Min Typ Max Unit Test Conditions. Gate Source Breakdown Voltage V(BR ... Labels: J211 |
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| 9. |  68.78 Kb • 6 Pages |
Abstract: ... J210 SSTJ211 J211 SSTJ212 J212. Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 ‐1 to ‐3 ‐25 4 2. J/SSTJ211 ‐2.5 to ‐4.5 ‐25 6 7. J/SSTJ212 ‐4 to ‐6 ‐25 7 15. Features ... Labels: J211 |
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| 10. |  207.33 Kb • 2 Pages |
Abstract: ... This accelerometer meets SAE J211 specifications for anthromorphic dummy instrumenta-tion. It is available in two acceleration ranges, 500g and 2000g full scale. The M1 option provides a ... Labels: J211 |
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