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PCJ-109D3M,301 (1721081-4) TE Connectivity (1721081-4) PCJ-109D3M,301 visit TE Connectivity
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PCJ-109D3M-WG,000M (1721547-4) TE Connectivity (1721547-4) PCJ-109D3M-WG,000M visit TE Connectivity
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J109 Datasheet

Part Manufacturer Description PDF Type
J109 Calogic N-Channel JFET Switch Original
J109 Fairchild Semiconductor N-Channel Switch Original
J109 Fairchild Semiconductor N-Channel Switch Original
J109 Fairchild Semiconductor N-Channel Switch Original
J109 InterFET N-Channel silicon junction field-effect transistor Original
J109 Philips Semiconductors N-channel silicon junction FETs Original
J109 Philips Semiconductors N-Channel Junction FET Original
J109 Vishay Telefunken TRANS JFET N-CH 25V 40MA 3TO-92 Original
J109 Intersil N-channel JFET switch. Scan
J109 Linear Integrated Systems LOW NOISE N-CHANNEL JFET SWITCH Scan
J109 Motorola European Master Selection Guide 1986 Scan
J109 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
J109 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
J109 N/A Semiconductor Master Cross Reference Guide Scan
J109 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
J109 N/A Basic Transistor and Cross Reference Specification Scan
J109 N/A Shortform Transistor PDF Datasheet Scan
J109 N/A Shortform Transistor PDF Datasheet Scan
J109 N/A Shortform Datasheet & Cross References Data Scan
J109 National Semiconductor N-Channel JFETs Scan
Showing first 20 results.

J109

Catalog Datasheet MFG & Type PDF Document Tags

CRS15

Abstract: J110 DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product , Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 , CONDITIONS MIN. MAX. UNIT - ±25 V J108 -3 -10 V J109 -2 -6 V , voltage ID = 1 µA; VDS = 5 V J110 IDSS drain current VGS = 0; VDS = 5 V J108 J109 Ptot , junction FETs J108; J109; J110 LIMITING VALUES In accordance with the Absolute Maximum Rating System
Philips Semiconductors
Original
CRS15 J110 J108 Silicon Junction FETs transistor j109 equivalent MAM197 MBC014

j109

Abstract: J109 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J109 This n-channel JFET is , . (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX J109 LOW ON RESISTANCE rDS(on , Temperatures Storage Temperature 55°C to +150°C J109 Benefits: Operating Junction Temperature 55°C to , 350mW Low Noise MAXIMUM CURRENT J109 Applications: Gate Current (Note 1) 50mA Analog Switches , 25V J109 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN
Micross Components
Original

J108

Abstract: J109 DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product , Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 , CONDITIONS MIN. MAX. UNIT - ±25 V J108 -3 -10 V J109 -2 -6 V , cut-off voltage IDSS drain current ID = 1 µA; VDS = 5 V VGS = 0; VDS = 5 V J108 J109 Ptot , junction FETs J108; J109; J110 LIMITING VALUES In accordance with the Absolute Maximum Rating System
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Original
J109 7

J108

Abstract: J110 bbS3«ì31 Q02400H 353 «APX N AMER PHILIPS/DISCRETE b7E J108/J109/J110 N-channel junction FETs , /DISCRETE b7E T>- N-channei junction FETs J108/J109/J110 LIMITING VALUES In accordance with the Absolute , V VDS = 5 V - 3 nA idss drain current Vgs = 0 J108 Vds = 15 V J109 J110 80 40 10 - mA -V(BR)GSS , J108 Vds = 5 V J109 J110 3 2 0.5 10 6 4 V RDS(on) drain-source on-resistance Vgs = 0V J108 VDS = 0.1V J109 J110 - 8 12 18 Q July 1993 618 This Material Copyrighted By Its Respective Manufacturer â
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OCR Scan
2J108 J108/J109/J110 PINNING-TO-92 DD24DD3 S3R31

j109

Abstract: J110 Discrete POWER & Signal Technologies S S M S O N D U C T O R J108 J109 J110 N-Channel , Ambient Pd 997 F airchild S em iconductor C orporation Max Units J108 / J109 / J110 350 2.8 125 mW mW/°C °C/W 357 °C/W J108 / J109 / J110 â WWWWWWMBWM* (continued , -1 5 V, VD = 0, TA = 100°C S S VDS= 15 V, lD= 10nA J108 J109 J110 -3.0 -2.0 -0.5 V , ) Drain-Source On Resistance VD < 0.1 V, VG = 0 S S J108 J109 J110 J108 J109 J110 < < < E E E
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OCR Scan

J108

Abstract: J109 J108 J109 J110 G S TO-92 D N-Channel Switch This device is designed for analog or , Thermal Resistance, Junction to Ambient Max Units J108 / J109 / J110 350 2.8 125 mW mW/°C °C/W 357 °C/W J108 / J109 / J110 N Discrete POWER & Signal Technologies , VGS = - 15 V, VDS = 0, TA = 100°C VDS = 15 V, ID = 10 nA J108 J109 J110 - 25 - 3.0 - 2.0 - , (on) Drain-Source On Resistance J108 J109 J110 J108 J109 J110 VDS 0.1 V, VGS = 0 80
National Semiconductor
Original

J110

Abstract: J109 J108 J109 J110 G TO-92 SD N-Channel Switch This device is designed for analog or , J108 / J109 / J110 350 2.8 125 mW mW/°C °C/W 357 °C/W J108 / J109 / J110 Discrete , J109 J110 - 25 - 3.0 - 2.0 - 0.5 V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain , 10 J108 J109 J110 J108 J109 J110 SMALL SIGNAL CHARACTERISTICS Cdg(on) Csg(off) Cdg(off , DRAIN CURRENT (mA) 100 J108 / J109 / J110 J108 / J109 / J110 N-Channel Switch (continued
Fairchild Semiconductor
Original

J110

Abstract: 0024002 353 « A P X b?E D N AMER PHILIPS/DISCRETE J108/J109/J110 July 1993 FEATURES â'¢ High , Product specification b7E D - N-channel junction FETs J108/J109/J110 LIMITING , 10 V VDS = 5 V Vgs = 0 V ds = 15 V J108 J109 J110 - I g = 1 pA V qs = 0 - V G S ( o ff ) gate-source cut-off voltage Id = 1 p A VDS = 5 V J108 J109 J110 Rd s m drain-source on-resistance Vqs = 0 V VDS = 0.1 V J108 J109 J110 nA - gate-source breakdown voltage 618
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OCR Scan
0024QD3 DD34005
Abstract: Lambertian 2 1 200 mV 1 J105 J111 H1 J109 CONN RECT 5x2 H2 1 Fixed Hole 1 , or J108 is connected J109 Output current setting, reference to table 5(Output current setting , J109 are used for output current setting according to eq. 1: Iout(A) + 0.2 R(W) Where R is the total resistance between FB and GND, J109 allows parallel connections of several resistors to select output current. Following is the output current setting table of J109 (1 = short connected; 0 = left ON Semiconductor
Original
NCP5030MTTXGEVB NCP5030 EVBUM2111/D
Abstract: '25V  Choppers Gate to Source Voltage  VGSS = â'25V      ,    Â Â Â Â Â Â Â Â Â Â Â Â  VGS(L)  â'7V  RL  150Ω  ID(on)  10mA         , J109 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J109 This n-channel JFET is Micross Components
Original

J108

Abstract: J110 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 , \ VDS = 5 V J108 -3 -10 V J109 -2 -6 V J110 -0.5 -4 V Idss drain current VQS = 0; VDS = 5 V J108 80 - mA J109 40 mA J110 10 mA Ptot total power dissipation up to Tamb = 50 °C - 400 mW , Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 LIMITING , V J109 -2 - -6 V J110 -0.5 - -4 V tass drain current VGs = 0;Vds = 15V J108 80 - - mA
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OCR Scan

J110

Abstract: j108 J108 / J109 / J110 I F A IH e W iL B Ü M C D N D U Ü T Ö R ' Discrete POWER & Signal Technologies J108 J109 J110 N-Channel Switch This device is designed for analog or digital switching , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max J108 / J109 / J110 , p o r a tio n J108 / J109 / J110 N-Channel Switch (continued) Electrical Characteristics , 10 nA J1 08 J109 J110 -3 .0 -2 .0 -0 .5 ON CHARACTERISTICS < < < E E E Id s s Zero-Gate
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OCR Scan

J108

Abstract: J110 analog switches, choppers and commutators. fc.3E D t.bS3T54 007Bb35 Ã27 «SIC3 J108/J109/J110 , Preliminary specification bfaSBTSM 0075b3b 7b3 «SIC3 J108/J109/J110 LIMITING VALUES In accordance with the , current -Vgs = 10 V VDS = 5 V - 3 nA Idss drain current Vqs = 0 J108 Vos = 15 V J109 J110 80 40 10 - mA , voltage Id = 1hA J108 Vps = 5V J109 J110 3 2 0.5 10 6 4 V RDS(on) drain-source on-resistance Vgs = 0V J108 VDS = 0.1V J109 J110 - 8 12 18 n October 1990 This Material Copyrighted By Its Respective
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OCR Scan
S3T54 S3T24

J110

Abstract: j108 531 National SlA Semiconductor J108 J109 J110 TL/Q/10100-2 N-Channel JFET Switch Electrical Characteristics Symbol O FF CH ARACTERISTICS V (B R)G SS ta = 25°c unless otherwise noted Min Max Unita Parameter Gate-Source Breakdown Voltage (V q s = 0, Iq = - 1 0 ¿lAdc) Gate Reverse Current (Vq s = - 1 5 , = 10 nAdc) J108 J109 J110 -2 5 Vdc Ig s s -3 .0 -2 0 0 -3 .0 -2 .0 -0 .5 -1 0 -6 .0 -4 , , (Note 1) (VDS = 1 5 V d c ,V GS = 0) J108 J109 J110 J108 J109 J110 80 40 10 8.0 12 18 mAdc
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OCR Scan
j110, national
Abstract: J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 Symbol Parameter Max. J108 - 110 625 5.0 , Fairchild Semiconductor Corporation Rev. B1, November 2002 J108/J109/J110/MMBFJ108 Thermal , J108/J109/J110/MMBFJ108 Typical Characteristics J108/J109/J110/MMBFJ108 Typical , , November 2002 J108/J109/J110/MMBFJ108 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 â , .29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 J108/J109 Fairchild Semiconductor
Original
Abstract: '25V  Choppers Gate to Source Voltage  VGSS = â'25V      ,    Â Â Â Â Â Â Â Â Â Â Â Â  VGS(L)  â'7V  RL  150Ω  ID(on)  10mA         , J109 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J109 This n-channel JFET is Micross Components
Original

MMBFJ108

Abstract: J108 % ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 J108/J109/J110/MMBFJ108 J108/J109 , J108/J109/J110/MMBFJ108 Thermal Characteristics TA=25°C unless otherwise noted r DS - DRAIN , Figure 6. Noise Voltage vs Frequency Rev. B, July 2002 J108/J109/J110/MMBFJ108 Typical Characteristics J108/J109/J110/MMBFJ108 Typical Characteristics (Continued) 50 TA = 25 °C , J108/J109/J110/MMBFJ108 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10
Fairchild Semiconductor
Original
MMBFJ108

N-Channel JFET FETs

Abstract: J109 J110 CASE 29-04, STYLE 5 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current Total D evice D issipatio n (ii T ^ = 25*C Derate above 25*0 Ju nctio n T em , J1 09 J 110 rD S(on) J109 J110 - - - - 12 18 'DSS 40 10 ohm s m Adc SMALL-SIGNAL , DIODES J109, J110 FIGURE 1 - COMMON SOURCE INPUT CAPACITANCE versus GATE-SOURCE VOLTAGE FIGURE 2 - , SISTO R S, FETs AND DIODES 4-38 J109, J110 FIGURE 7 - OUTPUT CHARACTERISTIC v GSIoff| - -5.0 V
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OCR Scan
N-Channel JFET FETs

j110, national

Abstract: NATIONAL J110 °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max J1 08/J109/J110 350 , J109 J110 -25 -3.0 -3.0 -2 .0 -2 0 0 - 10 -6 .0 -4 .0 V nA nA V V V -0.5 ON , ) Drain-SourceOn Resistance Vos < 0.1 V, Vos = 0 J108 J109 J110 J108 J109 J110 80 40 10 8.0 12 18 n Ì2 , ) bSQUBO 0 0 4 0 ^ 2 7 b20 7-6 J108 / J109 / J110 N-Channei Switch (continued) Typical
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OCR Scan
NATIONAL J110 08/J109/J110 S0113G SG1130

J108

Abstract: J109 LINEAR SYSTEMS Linear Integrated Systems J108. J109. J110. J110A LOW NOISE N-CHANNEL JFET SWITCH FEATURES L0WrDS(on) , Temperature -65°C to +200°C SYMBOL CHARACTERISTICS J108 J109 J110 UNITS CONDITIONS 'gss Gate , VDS=VGS=0 'd(on) Turn ON Delay Time 4 ~ 4 ~ - 4 ns Switchina Time Test Conditions J108 J109 J110 VDD
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OCR Scan
N-Channel JFET Switch
Abstract: 0024002 353 « A P X b?E D N AMER PHILIPS/DISCRETE J108/J109/J110 July 1993 FEATURES â'¢ High , Product specification b7E D - N-channel junction FETs J108/J109/J110 LIMITING , 10 V VDS = 5 V Vgs = 0 V ds = 15 V J108 J109 J110 - I g = 1 pA V qs = 0 - V G S ( o ff ) gate-source cut-off voltage Id = 1 p A VDS = 5 V J108 J109 J110 Rd s m drain-source on-resistance Vqs = 0 V VDS = 0.1 V J108 J109 J110 nA - gate-source breakdown voltage 618 -
OCR Scan
SF142B T-143
Showing first 20 results.