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J1-12 Datasheet

Part Manufacturer Description PDF Type
J112 Calogic N-Channel JFET Switch Original
J112 Fairchild Semiconductor N-Channel Switch Original
J112 Fairchild Semiconductor N-Channel Switch Original
J112 Fairchild Semiconductor JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 35V 625MW TO92 Original
J112 InterFET N-Channel silicon junction field-effect transistor Original
J112 Lexor Electronic Laboratories Delay Line TAPPED 20TAP 1IN 45NS ABS 900NS MAX Original
J112 Linear Integrated Systems TRANS JFET N-CH 5MA 3TO-92 Original
J112 Motorola JFET Chopper Transistor (N-Channel- Depletion) Original
J112 On Semiconductor JFET Chopper Transistor Original
J112 On Semiconductor Small Signal T092 JFET N Channel 35V; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 1000 Original
J112 On Semiconductor TRANS JFET N-CH 5 MinMA 3TO-92 Original
J112 Philips Semiconductors N-channel silicon field-effect transistors Original
J112 Philips Semiconductors N-Channel Silicon FET Original
J112 Sinyork Mini size of Discrete semiconductor elements Original
J112 Vishay Telefunken TRANS JFET N-CH 5 MinMA 3TO-226AA Original
J112 Intersil Shortform Data Book 1983/4 Scan
J112 Intersil N-channel JFET switch. Scan
J112 Intersil Data Book 1981 Scan
J112 Micro Electronics Semiconductor Device Data Book Scan
J112 Micro Electronics N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS Scan
Showing first 20 results.

J1-12

Catalog Datasheet MFG & Type PDF Document Tags

J112

Abstract: j113 MMBFJ113 J ill J112 J113 G T O -9 2 S D Mark: 6P / 6 R / 6S N-Channel Switch This device , J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 E S 'JS k iSSfrff*! U (continued , V gs s s -1 5 V, V ds - 35 =0 V - 1.0 =0 J111 J112 J113 -3.0 - 1.0 -0.5 J111 J112 J113 J111 J112 J113 nA - 10 -5.0 -3.0 1.0 V V V nA 20 5.0 , < 300 [is, Duty Cycle < 3.0% Typical Characteristics J111 / J112 / J113 / MMBFJ111 / MMBFJ112
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OCR Scan
j113 J111 J111-J113

J111

Abstract: j112 J112 J113 MAXIMUM RATINGS Rating Drain­Gate Voltage Gate­Source Voltage Gate Current Total Device , 5.0 Vdc, ID = 1.0 µAdc) J111 J112 J113 ID(off) V(BR)GSS IGSS VGS(off) 35 - - ­1.0 Vdc nAdc Vdc ­3.0 , CHARACTERISTICS Zero­Gate­Voltage Drain Current(1) (VDS = 15 Vdc) IDSS J111 J112 J113 rDS(on) J111 J112 J113 Cdg , J111 J112 J113 TYPICAL SWITCHING CHARACTERISTICS 1000 t d(on), TURN-ON DELAY TIME (ns) 500 200 100 50 , J112 J113 TJ = 25°C VGS(off) = 12 V = 7.0 V = 5.0 V 1000 500 200 t r , RISE TIME (ns) 100 50 20 10 5.0
ON Semiconductor
Original
226AA

J112

Abstract: J113 J112 J113 MAXIMUM RATINGS Rating Drain - Gate Voltage Gate - Source Voltage Gate Current Total , Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 µAdc) J111 J112 J113 ID(off) V(BR)GSS IGSS VGS(off) 35 - - - , , VGS = -10 Vdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1) (VDS = 15 Vdc) IDSS J111 J112 J113 rDS(on) J111 J112 J113 Cdg(on) + Csg(on) Cdg(off) Csg(off) - - - - 30 50 100 28 pF 20 5.0 2.0 , Order Number: J111/D J111 J112 J113 TYPICAL SWITCHING CHARACTERISTICS 1000 t d(on), TURN-ON DELAY
ON Semiconductor
Original
J112 jfet

J112

Abstract: J112 equivalent J112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is , . (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX J112 LOW GATE LEAKAGE CURRENT , Temperatures Storage Temperature 55°C to +150°C J112 Benefits: Operating Junction Temperature 55°C to , Power Dissipation 360mW Low Noise MAXIMUM CURRENT J112 Applications: Gate Current (Note 1) 50mA , Source Voltage VGSS = 35V J112 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL
Micross Components
Original
J112 equivalent j112 on J1-12 jfet j112

j113

Abstract: J113 sot23 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 D is c r e te P O W E R & S ig n a l T e c h n o lo g ie s P A I F I B N I L «0 S E M fC D N D Ü C jr Q R w J111 J112 J113 , d u c to r C o r p o r a tio n J ill / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel , -1 5 V, V D S= 0 V ds = 5 .0 V , Id = 1.0 jiA J111 J112 J113 -3 .0 -1 .0 -0 .5 -3 5 -1 .0 - 10 -5 .0 , ON CHARACTERISTICS < < < E E E Idss Zero-Gate Voltage Drain Current* VD S = 15 V, lGS= 0 J111 J112
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OCR Scan
MBFJ111 J113 sot23 WJ111

j112

Abstract: j112g Units / Tape & Reel TOâ'92 J111RLRAG J111RLRP J111RLRPG J112 J112G J112RL1 TOâ , '92 TOâ'92 (Pbâ'Free) 1000 Units / Bulk TOâ'92 J112RL1G TOâ'92 (Pbâ'Free) J112RLRA , J111, J112 JFET Chopper Transistors Nâ'Channel â'" Depletion Features â'¢ Pbâ'Free Packages , March, 2006 â' Rev. 2 1 Publication Order Number: J111/D J111, J112 ELECTRICAL , 5.0 Vdc, ID = 1.0 mAdc) VGS(off) J111 J112 Drainâ'Cutoff Current (VDS = 5.0 Vdc, VGS = â
ON Semiconductor
Original

J112

Abstract: transistor J112 - 763.535.2194 J112 Ordering Information 1. Series J112 1A S 12VDC J112 J112K , J112 J112K Dimensions shown in mm. Dimensions are shown for reference purposes only. 4. Contact Voltage 5VDC 6VDC 9VDC 12VDC 18VDC 24VDC Schematics & PC Layouts J112 1A J112K 1A , J112 RoHS Compliant 20.2 x 5.3 x 12.8 mm E197851 Features · · · · Low power consumption .12W Ultra light weight Narrow width for high density mounting UL/CUL certified Contact Data
CIT Relay & Switch
Original
transistor J112 250VAC 30VDC 1250VA 110VDC 500VDC

J113

Abstract: jfet j112 ON Semiconductort N­Channel - Depletion J111 J112 J113 1 DRAIN JFET Chopper , ) VGS(off) J111 J112 J113 Drain­Cutoff Current (VDS = 5.0 Vdc, VGS = ­10 Vdc) ID(off) Vdc , On Resistance (VDS = 0.1 Vdc) IDSS J111 J112 J113 mAdc rDS(on) J111 J112 J113 , Rev. 1 1 Publication Order Number: J111/D J111 J112 J113 TYPICAL SWITCHING CHARACTERISTICS 1000 TJ = 25°C 500 RK = RD 200 J111 J112 J113 100 500 VGS(off) = 12 V = 7.0 V
ON Semiconductor
Original
J112 TO92

j111

Abstract: 711002b QGbV^VS 7ci3 «PHIN J V J111 J112 J113 N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS , rDS on J111 J112 J113 max. 40 40 40 V min. 20 5 2 mA max. 400 400 400 mW min. 3 1 0.5 V max. 10 5 3 , within 2.5 max is uncontrolled -io, 49 max July 1993 621 J111 J112 J113 TllOäEb OObVTTb bST IPHIN A , J111 J112 J113 Gate reverse current -VGS= 15 V; VDS = 0 -'gss max. 1 1 1 nA Drain cut-off , = 750 Sì for J111 -Vqs off = 7 V; RL = 1550S2 for J112 -vGSoff= 5 V; R= 3150 Ì2 for J113 Rise time
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OCR Scan

J113 equivalent

Abstract: J112 DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect , Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 , Drain-source voltage J112 J113 ±VDS max. 40 40 40 IDSS min. 20 5 2 mA , N-channel silicon field-effect transistors J111; J112; J113 RATINGS Limiting values in accordance , CHARACTERISTICS Tj = 25 °C unless otherwise specified J111 J112 J113 Gate reverse current -VGS = 15 V
Philips Semiconductors
Original
J113 equivalent J-112 Field-Effect Transistors MAM042

J112

Abstract: J113 711002b 0Clb7cl75 7^3 IPHIN J V J111 J112 J113 N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS , cut-off voltage VDS = 5V;ID= 1 mA Drain-source on-state resistance VDS = 0.1 V;VGS = 0 J111 J112 J113 , Material Copyrighted By Its Respective Manufacturer J111 J112 J113 TllOäEb ODbVTTb bST IPHIN , J111 J112 I J113 Gate reverse current -VGS= 15 V; VDS = 0 -'gss max. 1 1 1 nA Drain cut-off , VDD = 10 V; VGS = 0 to VGSoff -VGSoff = 12 V; RL = 750 f2 for J111 -VGSoff= 7 V; Rl = 1550 fl for J112
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OCR Scan
Scans-00946 3150S2

J111

Abstract: J113 ;VGS = 0 RDSon J111 J112 J113 max. 40 40 40 V > 20 5 2 mA max. 400 400 400 mW > 3 1 0.5 V < 10 , Marking: J111 J112 J113 Dimensions in mm _! 0,40 mi n Note: Drain and source are interchangeable. PHILIPS February 1989 J111 J112 J113 RATINGS Limiting values in accordance with the Absolute Maximum , Tj = 25 °C unless otherwise specified J111 J112 J113 Gate reverse current -VGS= 15V;VDS = , otherwise specified Input capacitance y v J111 J112 J113 Vds = °; -vGS= 10 V; f = 1 MHz VDS = -VGs = 0;f
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OCR Scan
IEC134 marking j112 Vgsoff -6V m8910 M89-1044/RC
Abstract: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features , MMBFJ112 MMBFJ112_SB51338 MMBFJ113 J111 J112 J113 G S G S TO-92 D SOT-23 Mark , mounted on FR-4 PCB 1.6" X 1.6" X 0.06". © 2012 Fairchild Semiconductor Corporation J111 / J112 , / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 â'" N-Channel Switch August 2012 , J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev. B0 2 g - DRAIN Fairchild Semiconductor
Original
J111-113 MMBFJ111-113

J112 jfet

Abstract: J112G TO-92 J111RLRAG J111RLRP J111RLRPG J112 J112G J112RL1 TO-92 (Pb-Free) 2000 Units , Units / Bulk TO-92 J112RL1G TO-92 (Pb-Free) J112RLRA 2000 Units / Tape & Reel TO , J111, J112 JFET Chopper Transistors N-Channel - Depletion Features · Pb-Free Packages are , Order Number: J111/D J111, J112 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Voltage (VDS = 5.0 Vdc, ID = 1.0 mAdc) VGS(off) J111 J112 Drain-Cutoff Current (VDS = 5.0 Vdc
ON Semiconductor
Original
datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet j112 fet marking code J111 J112 MARKING

J113

Abstract: J112 ï»¿â  1^53=131 DÃ240Gb TTT «APX N AUER PHILIPS/DISCRETE b7E T> J111 J112 J113 N-CHANNEL , VDS = 0.1 V; VGS = 0 Jill J112 J113 ±VDS max. 40 40 40 V 'dss min. 20 5 2 mA ptot max. 400 400 , specified J111 J112 J113 Gate reverse current -VGS= 15 V;VDS = 0 -'gss max. 1 1 1 nA Drain , V Drain-source on-state resistance VDS = 0.1 V;VGS = 0 rDS on max. 30 50 100 n J111 J112 , 0ff = 12 V; RL= 750 fi for J111 -vGSoff= 7 V; R|_ = 1550 f2 for J112 -VGSoff= 5 V; R l = 3150 i2 for
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OCR Scan
DU240 DD240D7

J112

Abstract: j111 MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 G D G S TO-92 SOT-23 D S , 357 556 mW mW/°C °C/W °C/W J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Discrete , Cutoff Voltage VDS = 5.0 V, VGS = - 10 V - 35 V - 1.0 - 3.0 - 1.0 - 0.5 J111 J112 J113 J111 J112 J113 nA - 10 - 5.0 - 3.0 1.0 V V V nA 30 50 100 J111 J112 , J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch (continued) Typical
Fairchild Semiconductor
Original
J111-

j111

Abstract: J113 ORDERING INFORMATION TO-92 WAFER DICE J111 J111/W J111/D J112 J112/W J112/D J113 J113/W J113/D ELECTRICAL CHARACTERISTICS TEST CONDITIONS: 25° C unless otherwise noted I J111 I J112 J113 I 1 , 6 6 J111 J112 J113 12 C td(off) Turn Off Delay Time 20 20 20 ns Vdd 10V 10V 10V I 13
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OCR Scan
5001B csg 2001 J113-12 J112/W J112/D

J112

Abstract: J111 MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 G D G S TO-92 SOT-23 D S , / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N Discrete POWER & Signal Technologies , - 35 J111 J112 J113 - 3.0 - 1.0 - 0.5 J111 J112 J113 J111 J112 J113 V 20 5.0 , g fs - TRANSCONDUCTANCE (mmhos) Typical Characteristics J111 / J112 / J113 / MMBFJ111 , 0.2 0.4 0.6 0.8 1 VGS /V GS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V) J111 / J112 / J113
National Semiconductor
Original

J112

Abstract: Field Effect Transistors J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS MICRO EL.ECTRDN Jill, J112, J113 are N-channel silicon junction field effect transistors designed for analog switching, choppers and , Current (note l) IGSS -1 nA Vgs=-15V VDS=0 Drain Saturation Current Jill J112 J 113 IDSS * 20 5 2 mA , ) nA Vds=5V VGS=10V Gate-Source Pinchoff Voltage Jill J112 J113 VP -3 -0.5 -10 -5 -3 v v V ID=1|iA I0=1hA ID=1|ÌA VDS=5V Vqs=5V VdS=5V Drain-Source On Resistance J112 J113 rDS(on) 30 50 100 Q Q Q vgs=-iov
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OCR Scan
Field Effect Transistors jill j112 ltd T0-92 VDS40 3-/T103 3-/T10371

J113

Abstract: J112 J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS Irrl»! JI MICRO E Jill, J112, J113 are N-channel silicon . junction field effect transistors designed for analog switching , =0 Gate Reverse Current (note l) IGSS -1 nA Vgs=-15V VDS=0 Drain Saturation Current Jill J112 J113 idss , ) -1 nA VdS=5V vgs=10v Gate-Source Pinchoff Voltage Jill J112 J113 VP -3 -1 -0.5 -10 -5 -3 V v V id=1ha I0=lnA ID=1|ÌA Vds=5V Vds=5V VdS=5V Drain-Source On Resistance J112 J113 rDS(on) 30 50 100 q Q Q
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OCR Scan

SHOGYO* 26-0038-D

Abstract: SHOGYO* 26-0038-D lei-4 J112 J113 MAXIMUM RATINGS Rating Drain­Gate Voltage Gate­Source Voltage Gate Current Total Device , 5.0 Vdc, ID = 1.0 µAdc) J111 J112 J113 ID(off) V(BR)GSS IGSS VGS(off) 35 - - ­1.0 Vdc nAdc Vdc ­3.0 , CHARACTERISTICS Zero­Gate­Voltage Drain Current(1) (VDS = 15 Vdc) IDSS J111 J112 J113 rDS(on) J111 J112 J113 Cdg , J111 J112 J113 TYPICAL SWITCHING CHARACTERISTICS 1000 t d(on), TURN-ON DELAY TIME (ns) 500 200 100 50 , J112 J113 TJ = 25°C VGS(off) = 12 V = 7.0 V = 5.0 V 1000 500 200 t r , RISE TIME (ns) 100 50 20 10 5.0
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OCR Scan
SHOGYO* 26-0038-D SHOGYO* 26-0038-D lei-4 SHOGYO Shogyo International SMDJ-1206-8P 50MF1 1201-3PS 1202-4PS 1205-7PS 1206-8PS

J112

Abstract: J113 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 D is c r e te P O W E R & S ig n a l T e c h n o lo g ie s P A I F I B N I L «0 S E M fC D N D Ü C jr Q R w J111 J112 J113 , d u c to r C o r p o r a tio n J ill / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel , -1 5 V, V D S= 0 V ds = 5 .0 V , Id = 1.0 jiA J111 J112 J113 -3 .0 -1 .0 -0 .5 -3 5 -1 .0 - 10 -5 .0 , ON CHARACTERISTICS < < < E E E Idss Zero-Gate Voltage Drain Current* VD S = 15 V, lGS= 0 J111 J112
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OCR Scan
J113/MMBFJ111

MMBFJ111

Abstract: 6R SOT23 ï»¿â  1^53=131 DÃ240Gb TTT «APX N AUER PHILIPS/DISCRETE b7E T> J111 J112 J113 N-CHANNEL , VDS = 0.1 V; VGS = 0 Jill J112 J113 ±VDS max. 40 40 40 V 'dss min. 20 5 2 mA ptot max. 400 400 , specified J111 J112 J113 Gate reverse current -VGS= 15 V;VDS = 0 -'gss max. 1 1 1 nA Drain , V Drain-source on-state resistance VDS = 0.1 V;VGS = 0 rDS on max. 30 50 100 n J111 J112 , 0ff = 12 V; RL= 750 fi for J111 -vGSoff= 7 V; R|_ = 1550 f2 for J112 -VGSoff= 5 V; R l = 3150 i2 for
Fairchild Semiconductor
Original
6R SOT23

Diode r4d

Abstract: application note jfet J111 transistor ;VGS = 0 RDSon J111 J112 J113 max. 40 40 40 V > 20 5 2 mA max. 400 400 400 mW > 3 1 0.5 V < 10 , Marking: J111 J112 J113 Dimensions in mm _! 0,40 mi n Note: Drain and source are interchangeable. PHILIPS February 1989 J111 J112 J113 RATINGS Limiting values in accordance with the Absolute Maximum , Tj = 25 °C unless otherwise specified J111 J112 J113 Gate reverse current -VGS= 15V;VDS = , otherwise specified Input capacitance y v J111 J112 J113 Vds = °; -vGS= 10 V; f = 1 MHz VDS = -VGs = 0;f
Motorola
Original
Diode r4d
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