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  1 - 10 of about 37940 for J 1N4151   
  Part Number Manufacturer   Description        
 1.   JM38510/13503BPA  JM38510/13503BPA Texas Instruments   LOW-NOISE PRECISION HIGH-SPEED OPERATIONAL AMPLIFIER 8-CDIP -55 TO 125     Latest Datasheet  
 2.   JM38510/13503BPA  JM38510/13503BPA Texas Instruments   Low-Noise Precision High-Speed Operational Amplifier     Latest Datasheet  
 3.   JM38510/65308BEA  JM38510/65308BEA Texas Instruments   Quadruple D-type Flip-Flops With Clear     Latest Datasheet  
 4.   JM38510/65308BEA  JM38510/65308BEA Texas Instruments   QUADRUPLE D-TYPE FLIP-FLOPS WITH CLEAR 16-CDIP -55 TO 125     Latest Datasheet  
 5.   JM38510/30301BCA  JM38510/30301BCA Texas Instruments   QUADRUPLE 2-INPUT POSITIVE-NOR GATES 14-CDIP -55 TO 125     Latest Datasheet  
 6.   JM38510/30301BCA  JM38510/30301BCA Texas Instruments   Quadruple 2-Input Positive-NOR Gates     Latest Datasheet  
 7.   JM38510/65403BRA  JM38510/65403BRA Texas Instruments   OCTAL D-TYPE TRANSPARENT LATCHES WITH 3-STATE OUTPUTS 20-CDIP -55 TO 125     Latest Datasheet  
 8.   JM38510/65403BRA  JM38510/65403BRA Texas Instruments   Octal D-type Transparent Latches With 3-State Outputs     Latest Datasheet  
 9.   JM38510/32503BRA  JM38510/32503BRA Texas Instruments   OCTAL D-TYPE EDGE TRIGGERED FLIP-FLOPS WITH 3-STATE OUTPUTS 20-CDIP -55 TO 125     Latest Datasheet  
 10.   JM38510/32503BRA  JM38510/32503BRA Texas Instruments   Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs     Latest Datasheet  

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Contextual Results
  1 - 10 of about 15+ for J 1N4151   
1. Datasheet Text Contains J 1N4151
114.96 Kb  •  4 Pages

Abstract: ... 1N4151 1N4151-TR or 1N4151-TAP - Tape and Reel / Ammopack. Parameter Test condition Symbol ... T = 100 °C j. Figure 3. Diode Capacitance vs. Reverse Voltage. 0.1 1 10. 0. 0.5. 1.0. 1.5. 2.0. 3.0. C - Diode ...

Labels: J 1N4151

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2. Datasheet Text Contains J 1N4151
56.3 Kb  •  8 Pages

Abstract: ... The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar technology, and ... Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W. Rth j-a thermal ...

Labels: J 1N4151

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3. Datasheet Text Contains J 1N4151
79.51 Kb  •  3 Pages

Abstract: ... RATINGS AND CHARACTERISTIC CURVES 1N4151. FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD ... T J=25 f=1MHz. Ctot(OV) V R. Ctot(VR) 0 2 00°C. 10. 1. nA. 3 10. 2 10. 4 10. V R=50V. 1 00. 10. TJ=25°C f=1MHz. mA. 1. -1. 10 ...

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4. Datasheet Text Contains J 1N4151
221.7 Kb  •  3 Pages

Abstract: ... case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF. case ... J. D. H. G. 0.036” 0.093. 0.048” SUGGESTED SOLDER PAD LAYOUT. omponents. 20736 Marilla Street ...

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5. Datasheet Text Contains J 1N4151
115.52 Kb  •  1 Pages

Abstract: ... 2) T j. (OC) VF (V) at IF (mA) IR (nA) at VR (V) trr (ns) Conditions. 1N4149 1) 100 150 500 200 1 10 25 20 4 ... 1N4151 75 150 500 200 1 50 50 50 2. IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA. 1N4152 40 150 400 175 0.55 0.1 ...

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6. Datasheet Text Contains J 1N4151
196.54 Kb  •  1 Pages

Abstract: ... 1N4151 75 150 500 200 1 50 50 50 Max.2. IF=10mA ,VR=6V, RL=100 Ω , to. IR=1mA. 1N4152 40 150 400 175 0.55 ... T j = 175. o. C R thA = U 0.4 K/mW ...

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7. Datasheet Text Contains J 1N4151
224.79 Kb  •  2 Pages

Abstract: ... 1N4151 75 150 500 200 1 50 50 50 Max.2. IF=10mA ,VR=6V, RL=100 Ω , to. IR=1mA. 1N4152 40 150 400 175 0.55 ... T j = 175. o. C R thA = ≤0.4 K/mW. SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International ...

Labels: J 1N4151

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8. Datasheet Text Contains J 1N4151
139.29 Kb  •  4 Pages

Abstract: ... Features • Silicon Epitaxial Planar Diodes Electrical data identical with the device 1N4151 ... T = 100 °C j. VISHAY MCL4151. Document Number 85567. Rev. 1.7, 30-Apr-04. Vishay Semiconductors. www ...

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9. Datasheet Text Contains J 1N4151
128.62 Kb  •  5 Pages

Abstract: ... Electrical data identical with the device 1N4151. Micro Melf package Lead (Pb)-free component ... T = 100 °C j. MCL4151. Document Number 85567. Rev. 1.8, 07-Mar-06. Vishay Semiconductors. www ...

Labels: J 1N4151, RoHS

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10. Datasheet Text Contains J 1N4151
136.75 Kb  •  5 Pages

Abstract: ... Features • Silicon Epitaxial Planar Diode Electrical data identical with the device 1N4151 ... T = 100 °C j. Fig. 3 Diode Capacitance vs. Reverse Voltage. 0.1 1 10. 0. 0.5. 1.0. 1.5. 2.0. 3.0. C - Diode ...

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