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| Part Number | Manufacturer | Description | ||||||
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| 1. | 114.96 Kb • 4 Pages |
Abstract: ... 1N4151 1N4151-TR or 1N4151-TAP - Tape and Reel / Ammopack. Parameter Test condition Symbol ... T = 100 °C j. Figure 3. Diode Capacitance vs. Reverse Voltage. 0.1 1 10. 0. 0.5. 1.0. 1.5. 2.0. 3.0. C - Diode ... Labels: J 1N4151 |
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| 2. | 56.3 Kb • 8 Pages |
Abstract: ... The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar technology, and ... Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W. Rth j-a thermal ... Labels: J 1N4151 |
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| 3. | 79.51 Kb • 3 Pages |
Abstract: ... RATINGS AND CHARACTERISTIC CURVES 1N4151. FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD ... T J=25 f=1MHz. Ctot(OV) V R. Ctot(VR) 0 2 00°C. 10. 1. nA. 3 10. 2 10. 4 10. V R=50V. 1 00. 10. TJ=25°C f=1MHz. mA. 1. -1. 10 ... Labels: J 1N4151 |
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| 4. | 221.7 Kb • 3 Pages |
Abstract: ... case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF. case ... J. D. H. G. 0.036” 0.093. 0.048” SUGGESTED SOLDER PAD LAYOUT. omponents. 20736 Marilla Street ... Labels: J 1N4151 |
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| 5. | 115.52 Kb • 1 Pages |
Abstract: ... 2) T j. (OC) VF (V) at IF (mA) IR (nA) at VR (V) trr (ns) Conditions. 1N4149 1) 100 150 500 200 1 10 25 20 4 ... 1N4151 75 150 500 200 1 50 50 50 2. IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA. 1N4152 40 150 400 175 0.55 0.1 ... Labels: J 1N4151 |
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| 6. | 196.54 Kb • 1 Pages |
Abstract: ... 1N4151 75 150 500 200 1 50 50 50 Max.2. IF=10mA ,VR=6V, RL=100 Ω , to. IR=1mA. 1N4152 40 150 400 175 0.55 ... T j = 175. o. C R thA = U 0.4 K/mW ... Labels: J 1N4151 |
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| 7. | 224.79 Kb • 2 Pages |
Abstract: ... 1N4151 75 150 500 200 1 50 50 50 Max.2. IF=10mA ,VR=6V, RL=100 Ω , to. IR=1mA. 1N4152 40 150 400 175 0.55 ... T j = 175. o. C R thA = ≤0.4 K/mW. SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International ... Labels: J 1N4151 |
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| 8. | 139.29 Kb • 4 Pages |
Abstract: ... Features • Silicon Epitaxial Planar Diodes Electrical data identical with the device 1N4151 ... T = 100 °C j. VISHAY MCL4151. Document Number 85567. Rev. 1.7, 30-Apr-04. Vishay Semiconductors. www ... Labels: J 1N4151 |
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| 9. | 128.62 Kb • 5 Pages |
Abstract: ... Electrical data identical with the device 1N4151. Micro Melf package Lead (Pb)-free component ... T = 100 °C j. MCL4151. Document Number 85567. Rev. 1.8, 07-Mar-06. Vishay Semiconductors. www ... Labels: J 1N4151, RoHS |
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| 10. | 136.75 Kb • 5 Pages |
Abstract: ... Features • Silicon Epitaxial Planar Diode Electrical data identical with the device 1N4151 ... T = 100 °C j. Fig. 3 Diode Capacitance vs. Reverse Voltage. 0.1 1 10. 0. 0.5. 1.0. 1.5. 2.0. 3.0. C - Diode ... Labels: J 1N4151 |
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