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Part Manufacturer Description Datasheet BUY
PMP5557 Texas Instruments LED Testboard visit Texas Instruments
PMP5632 Texas Instruments LED w/ dimming visit Texas Instruments
TPS61162YFFR Texas Instruments LED DISPLAY DRIVER visit Texas Instruments
LP8556TMX-E12/NOPB Texas Instruments LED DISPLAY DRIVER visit Texas Instruments
PMP5665 Texas Instruments MR16 LED Replacement visit Texas Instruments
TLC5949DBQ Texas Instruments LED DISPLAY DRIVER visit Texas Instruments

Ir photodiodes emitting diode cd

Catalog Datasheet MFG & Type PDF Document Tags

CQY78

Abstract: cqy77 matched to the GaAs infrared emitting diode, whose best known field of application covers IR remote , Sensitivity 100 PIN diode Human eye 60 Photodiodes can optimally be matched to the desired , Figure 1.2 Relative Sensitivity of a Silicon and a Germanium Diode The two photodiodes cover the , respect to the photocurrent. Contrary to the PN diode, most of the light for PIN photodiodes is , Light Emitting Diode directly fall from the conduction band into a free state in the valence band
Siemens
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Photo diode TFK S 186 P

Abstract: TFMS 4300 near IR silicon photodetectors Silicon photodiodes The physics of silicon detector diodes Properties , diodes (GaAs) Light emitting diodes Detector devices Photovoltaic cells, photodiodes Phototransistors , TELEFUNKEN Semiconductors 1.2 IR emitters Infrared emitting diodes Package Type Characteristics + , intensity Iv CD Diode capacitance Total capacitance effective between the diode terminals due to case , Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission 2. Explanation
Temic Semiconductors
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Abstract: Temic S e m i c o n d u c t o r s TSSS2600 GaAs IR Emitting Diode in Side View Miniature Package Description T SSS2600 is a m iniature infrared em itting diode in G aA s on G aA s technology, m , atched to silicon photodiodes and phototransistors. Features · · · · · · · · Low forw ard voltage , voltage requirem ents. M atching w ith silicon PIN photodiodes o r phototransistors (e.g. TEST2600 , vf Ir C, Ie U < t> e TK^e -
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FND-100Q

Abstract: FND-100 , Inc. table of contents Emitters Surface Emitting LEDs 2 High Energy QCW Laser Diodes 980nm , Diodes 1550nm PVG Series 4 Emitter Drawings 21-23 Detectors Silicon PIN Photodiodes 5-7 Avalanche Photodiode Guidelines 8 Silicon Avalanche Photodiodes 9-10 TE-Cooled Silicon Avalanche Photodiodes 11 Lightpipe Silicon Avalanche Photodiodes 11 Radiation Detection Avalanche Photodiodes 12 NIR-Enhanced Silicon Avalanche Photodiodes 12 Single Photon Counting Avalanche
PerkinElmer Optoelectronics
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FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q ISO-9001 TSI16949 CAT0506P

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P luminous intensity Iv CD Diode capacitance Total capacitance effective between the diode terminals due , . . . . . . . . . . . . . Infrared Emitting Diodes . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . UV, Visible, and Near IR Silicon Photodetectors . . . . . . . . . . . . , (Materials with a bandgap 0.6­1.0 eV) 1) N PHOTO COUPLER P DIODE: radiation sensitive B SILICON (Materials with a bandgap 1.0­1.3 eV) 1) Q DIODE: radiation generating R THYRISTOR
Temic Semiconductors
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Photo diode TFK S 186 P IR diodes TFK S 186 P TFK BPW 41 N TFK S153P IR diode TFK 186 TFK BPW 20

Leader 8020 schematics Oscilloscope

Abstract: smd diode schottky code marking GW , dual) Bridge Superectifier® Sinterglass Avalanche Diodes IR Emitters and Detectors, and IR , . Eye Safety Risk Assessment of Light or Infrared Emitting Diodes. Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC (EN DIN) 60825-1 , questions concerning IR emitters, contact: emittertechsupport@vishay.com For technical questions concerning , Stand off, clear epoxy For technical questions concerning IR emitters, contact
Vishay Semiconductors
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Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 VSE-DB0103-0810

OPI2630

Abstract: QPI2630 â'¢ Ultra high speed â'¢ 8 pin P-DIP package Description The 0PI263D consists of twin emitting diodes optically coupled to a pair of photodiodes amplified by high gain linear amplifiers. Each , . .26018.601 .240(6.10) ._.39019.91)_ .37019.40) ® CD ® ® dimensions are in inches (millimeters! .310 , Diode (Each Channel) Average Forwerd Current , Forward Voltage Ml 1.75 V lF=10.0 mA, Ta=2B°C ir Input Reverse Current»' 10.0 /«A VR = 5.0 V, TA
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QPI2630 OPI2630 2601860 0PI2630 V01TA6E

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Photodiodes . . . . . . . . . . . . . . , . . . 40 Solid State Emitters Infrared Emitting Diodes . . . . . . . . . . . . . . . . . . . , photodiodes Features · Low-cost visible and near-IR photodetector · Excellent linearity in output , Optoelectronics offers a broad array of Silicon and InGaAs PIN and APDs. InGaAs Avalanche Photodiodes The high-quality InGaAs avalanche photodiodes (APDs) are packaged in hermetically sealed TO cans and ceramic
PerkinElmer Optoelectronics
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C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor RS232

TRANSISTOR si 6822

Abstract: LM 3140 in die Diode ein, so werden zu beiden Seiten des pnÜbergangs Elektron-Loch-Paare erzeugt. Die , . Er bestimm t vorw iegend den spektralen Verlauf der Fotoem pfindlichkeit der Diode. Die Raum , (ohne Vorspannung). Im Elem entbetrieb wirkt die Diode als Stromgenerator, der die Strahlungsenergie in , Stromquelle mit dem Fotostrom / p auffaßt und parallel zum Lastwiderstand ÄLE eine Diode mit gleicher , b in a tio n .) S pannung. D io d e ( In d ir e k te 2 = in d ir e k te © 0 © ö
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TRANSISTOR si 6822 LM 3140 si 6822 transistor transistor 6822 si transistors Si 6822 SN-72500

dvd writer laser diode

Abstract: dvd writer laser consists of three major components: a light emitting diode (LED) light source, a detector IC consisting photodiodes and lens to focus light beam from the emitter as well as light falling on the detector. The operation of the encoder is based on the principle of optics where the detector photodiodes sense the , -8320 encoder which can easily fit into many space and weight constraint applications, e.g., CD or DVD writer , resolution: 180 (lines/inch) or 7.09 (lines/mm) Applications ·Printers ·Copiers · CD/DVD writer · Card
Avago Technologies
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dvd writer laser diode dvd writer laser United Detector Technology Photodiodes Analog rotary encoder AEDR-8320 AV02-0233EN

dvd writer laser diode

Abstract: motion DETECTOR CIRCUIT DIAGRAM for light diagram below, the AEDR-8320 encoder consists of three major components: a light emitting diode (LED) light source, a detector IC consisting photodiodes and lens to focus light beam from the emitter as , , e.g., CD or DVD writer laser head's linear movement. The AEDR-8320 comes in a 180 LPI (Lines Per , , while continuously ensuring reliability in performance. Applications · Printers · Copiers · CD , photodiodes sense the absence and presence of light. In this case, the rotary/ linear motion of an object
Avago Technologies
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motion DETECTOR CIRCUIT DIAGRAM for light laser diode dvd writer motor encoder Detector "Detector IC" CD DVD EN Rotary optical encoder Laser Head for CD DVD

dvd writer laser

Abstract: dvd writer laser diode emitting diode (LED) light source, a detector IC consisting photodiodes and lens to focus light beam from , constraint applications, e.g., CD or DVD writer laser head's linear movement. The AEDR-8320 comes in a 180 , Printers · Copiers · CD/DVD writer · Card readers Theory of Operation Definitions The AEDR , where the detector photodiodes sense the absence and presence of light. In this case, the rotary , the photodiodes as the codewheel rotates. The moving light pattern is exploited by the detector
Avago Technologies
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photodetector IC dvd DVD laser head ir wheel encoder Reflective Optical encoder DVD LENS circuit diagrams dvd writer circuit

Analog rotary encoder

Abstract: AEDR-8320 emitting diode (LED) light source, a detector IC consisting photodiodes and lens to focus light beam from , constraint applications, e.g., CD or DVD writer laser head's linear movement. The AEDR-8320 comes in a 180 , Printers · Copiers · CD/DVD writer · Card readers Theory of Operation Definitions The AEDR , where the detector photodiodes sense the absence and presence of light. In this case, the rotary , the photodiodes as the codewheel rotates. The moving light pattern is exploited by the detector
Avago Technologies
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dvd writer laser diode

Abstract: consists of three major components: a light emitting diode (LED) light source, a detector IC consisting photodiodes and lens to focus light beam from the emitter as well as light falling on the detector. The operation of the encoder is based on the principle of optics where the detector photodiodes sense the , -8320 encoder which can easily fit into many space and weight constraint applications, e.g., CD or DVD writer , : 180 (lines/inch) or 7.09 (lines/mm) Applications · · · · Printers Copiers CD/DVD writer Card
Avago Technologies
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ELC-1300-25

Abstract: 6605 SP design LEDs: E ' L X Light emitting Type D = Diode (standard packages) S = SMD A = Array J = Jumbo , Chips ♦ visible ♦ infrared ♦ special design AutoSelective Photodiodes ♦ ultraviolet , high-power ♦ high-speed Type Designation System LED Chips: E L C â'"â'" Light emitting Chip 1234 , 9 = 85 - 94 0 > 300 8 LED design *W- for white Photodiodes and photodiode chips: E . P X Photo Type D = Diode (standard packages) C = Chip 1234 Wavelength A [nm] 5 Packaging 0 =
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ELC-1300-25 6605 SP EPD-550 EPD-660-5 SMD A1W ultraviolet sensor flame ELJ-880-248 ELJ-880-208 ELJ-910-228 ELJ-910-248 ELJ-910-208 ELC-660-199

CD laser pickup assembly

Abstract: ic 555 use with metal detector 2000 1000 10 8 High IR laser diode Mercury spectral line ArF excimer laser 6 4 , Luminous intensity cd (candela) Radiant energy per unit area of a light source having an emitting , light source having an emitting area per unit solid angle Radiance W/(m2·sr) Luminance cd , . Semiconductor photosensors (e.g., Si photodiodes) and photomultiplier tubes have a wider dynamic range than the normal human eye. PMT and MPPC are suitable for detecting weak light. Si photodiodes on the other
Hamamatsu
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CD laser pickup assembly ic 555 use with metal detector DVD optical pick-up assembly bolometer detector

smd diode UJ 64 A

Abstract: smd diode UM 08 GREEN EUR USD direct emitting green laser diodes cw mode, modulable > 100 MHz -> laser , , 9mm, without photodiode 48,48 LASER DIODES - IR EUR USD 1-9 pcs. 1-9 pcs. infrared , EUR USD infrared laser diode TO-can, TO3, C-mount, HHL package 1430 - 1750 nm 1-9 pcs , , 500 mW, mm, HHL package LASER DIODES - MID IR DFB EUR USD 1-2 pcs. 1-2 pcs , laser diode in 14-Pin butterfly package - Ridge waveguide technology - carbon dioxide monitoring -
Roithner LaserTechnik
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smd diode UJ 64 A smd diode UM 08 SLD3237VF SLD3237VFR SLD3236VF 20/SPL1550-10-9-PD RLU4116E RLT390-50CMG RLT395-50CMG RLT400-50CMG RLT405-50CMG DL-3146-151

HOA0901-11

Abstract: HOA0901-12 Application Notes Application Note Light Emitting Diode (IRED) Power Output Specifications A , and supply the best products possible. Application Note Light Emitting Diode (IRED) Power Output , . Honeywell Application Note Photodiodes The voltage-current characteristic for an idealized diode is , . Because most photodiodes are operated near the bias point where V = 0 this condition will be used to characterize the photodiode. Photodiodes may be represented by the Norton or the Thevenin equivalent circuit
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HOA0901-11 HOA0901-12 2N2222 hfe quadrature mouse phototransistor HOA0902-11 ir slotted wheel encoder A1874-11 HOA1874-11 2N2222

LN25

Abstract: LN252RPX 13-1 Kny ® (w m/TYPE K(GaP)/Red Light Emitting Diode(GaP) m ^/APPLICATION 7F ffl/Indicators , large-scale heat stress is given when there is no space between a substrate and a light emitting diode, a light emitting diode may be destroyed. u mwKDimnv-Yy^og^nut^ v â'" vy When you mount LED using a box etc , '¢ Electrical Characteristic m s Item m # Symbol n m & w Test condition n m tè. T limit & it Unit m ¿5 ir , Reverse Leakage Current IR Same as the Product Standards JÃ"Ã"X2.0 Upper Limit X 2.0 JX A % Luminous
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LN25 LN252RPX

H0A0872-n55

Abstract: H0A1405-1 * Significant Electrical E - Significant Mechanical * - Obsoleted by Mfgr IRED Infrared Emitting Diode PTX - , Infrared Emitting Diode PTX -Phototransistor DARL - Darlington SCHM -Schmitt TRANS * Transmissive REEL - , infrared Emitting Diode PTX - Phototransistor DARL -Darlington SCHM - Schmitt TRANS - Transmissive REFL - , Mfgr IRED - Infrared Emitting Diode PTX - Phototransistor DARL - Darlington SCHM - Schmitt TRANS - , Infrared Emitting Diode PTX - Phototransistor DARL - Darlington SCHM - Schmitt TRANS - Transmissive REEL
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HOA708-1 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 til78 phototransistor 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265
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