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Part Manufacturer Description Datasheet BUY
WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey
WM8255SEFL Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey
CDB4352 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz DAC w/LD visit Digikey
ODD-SXU-044 Opto Diode Corp PHOTODIODE 331MM visit Digikey
SXUV300C Opto Diode Corp PHOTODIODE 331MM visit Digikey
CS8130-CSZ Cirrus Logic IC IR TRANSCEIVER 2-5V 20-SSOP BUY

Ir photodiodes emitting diode cd

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: matched to the GaAs infrared emitting diode, whose best known field of application covers IR remote , Sensitivity 100 PIN diode Human eye 60 Photodiodes can optimally be matched to the desired , Figure 1.2 Relative Sensitivity of a Silicon and a Germanium Diode The two photodiodes cover the , respect to the photocurrent. Contrary to the PN diode, most of the light for PIN photodiodes is , Light Emitting Diode directly fall from the conduction band into a free state in the valence band Siemens
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CQY78 cqy77 SF-104 equivalent transistor phototransistor application lux meter solar cell transistor infrared BPW33
Abstract: near IR silicon photodetectors Silicon photodiodes The physics of silicon detector diodes Properties , diodes (GaAs) Light emitting diodes Detector devices Photovoltaic cells, photodiodes Phototransistors , TELEFUNKEN Semiconductors 1.2 IR emitters Infrared emitting diodes Package Type Characteristics + , intensity Iv CD Diode capacitance Total capacitance effective between the diode terminals due to case , Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission 2. Explanation Temic Semiconductors
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Photo diode TFK S 186 P TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector
Abstract: Temic S e m i c o n d u c t o r s TSSS2600 GaAs IR Emitting Diode in Side View Miniature Package Description T SSS2600 is a m iniature infrared em itting diode in G aA s on G aA s technology, m , atched to silicon photodiodes and phototransistors. Features · · · · · · · · Low forw ard voltage , voltage requirem ents. M atching w ith silicon PIN photodiodes o r phototransistors (e.g. TEST2600 , vf Ir C, Ie U < t> e TK^e -
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Abstract: , Inc. table of contents Emitters Surface Emitting LEDs 2 High Energy QCW Laser Diodes 980nm , Diodes 1550nm PVG Series 4 Emitter Drawings 21-23 Detectors Silicon PIN Photodiodes 5-7 Avalanche Photodiode Guidelines 8 Silicon Avalanche Photodiodes 9-10 TE-Cooled Silicon Avalanche Photodiodes 11 Lightpipe Silicon Avalanche Photodiodes 11 Radiation Detection Avalanche Photodiodes 12 NIR-Enhanced Silicon Avalanche Photodiodes 12 Single Photon Counting Avalanche PerkinElmer Optoelectronics
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FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q ISO-9001 TSI16949 CAT0506P
Abstract: luminous intensity Iv CD Diode capacitance Total capacitance effective between the diode terminals due , . . . . . . . . . . . . . Infrared Emitting Diodes . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . UV, Visible, and Near IR Silicon Photodetectors . . . . . . . . . . . . , (Materials with a bandgap 0.6­1.0 eV) 1) N PHOTO COUPLER P DIODE: radiation sensitive B SILICON (Materials with a bandgap 1.0­1.3 eV) 1) Q DIODE: radiation generating R THYRISTOR Temic Semiconductors
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TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell
Abstract: , dual) Bridge Superectifier® Sinterglass Avalanche Diodes IR Emitters and Detectors, and IR , . Eye Safety Risk Assessment of Light or Infrared Emitting Diodes. Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC (EN DIN) 60825-1 , questions concerning IR emitters, contact: emittertechsupport@vishay.com For technical questions concerning , Stand off, clear epoxy For technical questions concerning IR emitters, contact Vishay Semiconductors
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Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 VSE-DB0103-0810
Abstract: â'¢ Ultra high speed â'¢ 8 pin P-DIP package Description The 0PI263D consists of twin emitting diodes optically coupled to a pair of photodiodes amplified by high gain linear amplifiers. Each , . .26018.601 .240(6.10) ._.39019.91)_ .37019.40) ® CD ® ® dimensions are in inches (millimeters! .310 , Diode (Each Channel) Average Forwerd Current , Forward Voltage Ml 1.75 V lF=10.0 mA, Ta=2B°C ir Input Reverse Current»' 10.0 /«A VR = 5.0 V, TA -
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QPI2630 OPI2630 2601860 0PI2630 V01TA6E
Abstract: . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Photodiodes . . . . . . . . . . . . . . , . . . 40 Solid State Emitters Infrared Emitting Diodes . . . . . . . . . . . . . . . . . . . , photodiodes Features · Low-cost visible and near-IR photodetector · Excellent linearity in output , Optoelectronics offers a broad array of Silicon and InGaAs PIN and APDs. InGaAs Avalanche Photodiodes The high-quality InGaAs avalanche photodiodes (APDs) are packaged in hermetically sealed TO cans and ceramic PerkinElmer Optoelectronics
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NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor RS232
Abstract: in die Diode ein, so werden zu beiden Seiten des pnÜbergangs Elektron-Loch-Paare erzeugt. Die , . Er bestimm t vorw iegend den spektralen Verlauf der Fotoem pfindlichkeit der Diode. Die Raum , (ohne Vorspannung). Im Elem entbetrieb wirkt die Diode als Stromgenerator, der die Strahlungsenergie in , Stromquelle mit dem Fotostrom / p auffaßt und parallel zum Lastwiderstand ÄLE eine Diode mit gleicher , b in a tio n .) S pannung. D io d e ( In d ir e k te 2 = in d ir e k te © 0 © ö -
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TRANSISTOR si 6822 LM 3140 si 6822 transistor transistor 6822 si transistors Si 6822 SN-72500
Abstract: consists of three major components: a light emitting diode (LED) light source, a detector IC consisting photodiodes and lens to focus light beam from the emitter as well as light falling on the detector. The operation of the encoder is based on the principle of optics where the detector photodiodes sense the , -8320 encoder which can easily fit into many space and weight constraint applications, e.g., CD or DVD writer , resolution: 180 (lines/inch) or 7.09 (lines/mm) Applications ·Printers ·Copiers · CD/DVD writer · Card Avago Technologies
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dvd writer laser dvd writer laser diode United Detector Technology Photodiodes Analog rotary encoder AEDR-8320 AV02-0233EN
Abstract: diagram below, the AEDR-8320 encoder consists of three major components: a light emitting diode (LED) light source, a detector IC consisting photodiodes and lens to focus light beam from the emitter as , , e.g., CD or DVD writer laser head's linear movement. The AEDR-8320 comes in a 180 LPI (Lines Per , , while continuously ensuring reliability in performance. Applications · Printers · Copiers · CD , photodiodes sense the absence and presence of light. In this case, the rotary/ linear motion of an object Avago Technologies
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laser diode dvd writer motor encoder EN Rotary optical encoder Laser Head for CD DVD Detector "Detector IC" CD DVD photodetector IC dvd
Abstract: emitting diode (LED) light source, a detector IC consisting photodiodes and lens to focus light beam from , constraint applications, e.g., CD or DVD writer laser head's linear movement. The AEDR-8320 comes in a 180 , Printers · Copiers · CD/DVD writer · Card readers Theory of Operation Definitions The AEDR , where the detector photodiodes sense the absence and presence of light. In this case, the rotary , the photodiodes as the codewheel rotates. The moving light pattern is exploited by the detector Avago Technologies
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ir wheel encoder DVD laser head PXA Series light detector laser for dvd writer dvd writer circuit
Abstract: emitting diode (LED) light source, a detector IC consisting photodiodes and lens to focus light beam from , constraint applications, e.g., CD or DVD writer laser head's linear movement. The AEDR-8320 comes in a 180 , Printers · Copiers · CD/DVD writer · Card readers Theory of Operation Definitions The AEDR , where the detector photodiodes sense the absence and presence of light. In this case, the rotary , the photodiodes as the codewheel rotates. The moving light pattern is exploited by the detector Avago Technologies
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Abstract: consists of three major components: a light emitting diode (LED) light source, a detector IC consisting photodiodes and lens to focus light beam from the emitter as well as light falling on the detector. The operation of the encoder is based on the principle of optics where the detector photodiodes sense the , -8320 encoder which can easily fit into many space and weight constraint applications, e.g., CD or DVD writer , : 180 (lines/inch) or 7.09 (lines/mm) Applications · · · · Printers Copiers CD/DVD writer Card Avago Technologies
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Abstract: design LEDs: E ' L X Light emitting Type D = Diode (standard packages) S = SMD A = Array J = Jumbo , Chips ♦ visible ♦ infrared ♦ special design AutoSelective Photodiodes ♦ ultraviolet , high-power ♦ high-speed Type Designation System LED Chips: E L C â'"â'" Light emitting Chip 1234 , 9 = 85 - 94 0 > 300 8 LED design *W- for white Photodiodes and photodiode chips: E . P X Photo Type D = Diode (standard packages) C = Chip 1234 Wavelength A [nm] 5 Packaging 0 = -
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6605 SP ELC-1300-25 EPD-550 EPD-660-5 ultraviolet sensor flame SMD A1W ELJ-880-248 ELJ-880-208 ELJ-910-228 ELJ-910-248 ELJ-910-208 ELC-660-199
Abstract: 2000 1000 10 8 High IR laser diode Mercury spectral line ArF excimer laser 6 4 , Luminous intensity cd (candela) Radiant energy per unit area of a light source having an emitting , light source having an emitting area per unit solid angle Radiance W/(m2·sr) Luminance cd , . Semiconductor photosensors (e.g., Si photodiodes) and photomultiplier tubes have a wider dynamic range than the normal human eye. PMT and MPPC are suitable for detecting weak light. Si photodiodes on the other Hamamatsu
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CD laser pickup assembly DVD optical pick-up assembly ic 555 use with metal detector
Abstract: GREEN EUR USD direct emitting green laser diodes cw mode, modulable > 100 MHz -> laser , , 9mm, without photodiode 48,48 LASER DIODES - IR EUR USD 1-9 pcs. 1-9 pcs. infrared , EUR USD infrared laser diode TO-can, TO3, C-mount, HHL package 1430 - 1750 nm 1-9 pcs , , 500 mW, mm, HHL package LASER DIODES - MID IR DFB EUR USD 1-2 pcs. 1-2 pcs , laser diode in 14-Pin butterfly package - Ridge waveguide technology - carbon dioxide monitoring - Roithner LaserTechnik
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DL-7146-301S smd diode UJ 64 A smd diode UM 08 SLD3237VFR SLD3237VF smd diode UM SLD3236VF RLU4116E RLT390-50CMG RLT395-50CMG RLT400-50CMG RLT405-50CMG DL-3146-151
Abstract: Application Notes Application Note Light Emitting Diode (IRED) Power Output Specifications A , and supply the best products possible. Application Note Light Emitting Diode (IRED) Power Output , . Honeywell Application Note Photodiodes The voltage-current characteristic for an idealized diode is , . Because most photodiodes are operated near the bias point where V = 0 this condition will be used to characterize the photodiode. Photodiodes may be represented by the Norton or the Thevenin equivalent circuit -
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HOA0901-11 HOA0901-12 2N2222 hfe quadrature mouse phototransistor HOA0902-11 mouse joystick circuit A1874-11 HOA1874-11 2N2222
Abstract: 13-1 Kny ® (w m/TYPE K(GaP)/Red Light Emitting Diode(GaP) m ^/APPLICATION 7F ffl/Indicators , large-scale heat stress is given when there is no space between a substrate and a light emitting diode, a light emitting diode may be destroyed. u mwKDimnv-Yy^og^nut^ v â'" vy When you mount LED using a box etc , '¢ Electrical Characteristic m s Item m # Symbol n m & w Test condition n m tè. T limit & it Unit m ¿5 ir , Reverse Leakage Current IR Same as the Product Standards JÃ"Ã"X2.0 Upper Limit X 2.0 JX A % Luminous -
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LN25 LN252RPX
Abstract: * Significant Electrical E - Significant Mechanical * - Obsoleted by Mfgr IRED Infrared Emitting Diode PTX - , Infrared Emitting Diode PTX -Phototransistor DARL - Darlington SCHM -Schmitt TRANS * Transmissive REEL - , infrared Emitting Diode PTX - Phototransistor DARL -Darlington SCHM - Schmitt TRANS - Transmissive REFL - , Mfgr IRED - Infrared Emitting Diode PTX - Phototransistor DARL - Darlington SCHM - Schmitt TRANS - , Infrared Emitting Diode PTX - Phototransistor DARL - Darlington SCHM - Schmitt TRANS - Transmissive REEL -
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HOA708-1 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 til78 phototransistor HOA9 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265
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