NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: DWHP23-12 DWHP16-12 DWS20-200A IXFH150N15P IXFH150N15P IXFK180N15P IXFK180N15P IXFH110N10P IXFH110N10P IXFH140N10P IXFH170N10P IXFH170N10P IXFK200N10P IXFK200N10P Equivalent device data ... | Original |
46 pages, |
mosfet ixfk48n60p IXTD11P50-7B IXTD11P50 IXED15N120 IXFB50N80Q2 IXGH48N60 IXGH50N60C2 IXFK34N80 IXTD08N100P-1A DWHP56-12 IXFH30N50P IXTQ22N50P n mosfet depletion 600V IXGH64N60A3 datasheet abstract |
| Abstract: PolarHVTM HiPerFET IXFH 140N10P 140N10P IXFT 140N10P 140N10P Power MOSFETs VDSS ID25 = 100 V = 140 A 11 m 150 ns RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 M 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25° C 140 ID(RMS) External lead current limit IDM TC = 25° C, pulse width l ... | Original |
5 pages, |
140N1 140N10P 140N10P abstract |
| Abstract: Advance Technical Information IXFH 140N10P 140N10P VDSS ID25 PolarHVTM HiPerFET IXFT 140N10P 140N10P Power MOSFETs = = = RDS(on) 100 V 140 A 11 m N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated TO-247 (IXFT) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M 100 100 ±20 VGSM ID25 TC = 25°C ID(RMS) External lead current limit IDM TC = 25°C, pulse width limited by TJM IAR T ... | Original |
5 pages, |
140N10P 140N10P abstract |
| Abstract: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property 1 6 7 9 10 11 12 14 16 18 20 21 22 23 24 26 27 28 29 30 MICRONIX Analog Mixed Signal ASIC Capabilities 31 MwT MMIC Amplifiers Standard GaAs FETs & PHEMTs Wireless Amplifiers (MPS, ULA and WPS WiMax) Hybrid Microwave Modules Standard, Military & Hi-Rel Connectorized Amplifiers 61 62 64 66 67 ... | Original |
288 pages, |
Westcode SW22cxc14c vub 70-12 48N60 vub 70-16 60n30 IXDD 614 10M45 C 547 B W57 BJT transistor 10N60C 18N50 equivalent MOSFET smd 4407 7N60B equivalent datasheet abstract |
| Ixys Corp. Part | Ixys Description | Industry Part | Manufacturer | Description | Type |
| IXFH140N10P Buy | VDSS (V)=100, ID@TC=25°C(A)=140, RDS(on) max @TJ=25°C(Ohm)=0.0110 | FQH140N10 Buy | Fairchild Semiconductor | VDSS (V)=100, ID@TC=25°C(A)=140, RDS(on) max @TJ=25°C(Ohm)=0.0100 | Close |