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IRf451 Datasheet

Part Manufacturer Description PDF Type
IRF451 Intersil 11A and 13A, 450V and 500V, 0.4 and 0.5 ?, N-Channel Power MOSFETs Original
IRF451 FCI POWER MOSFETs Scan
IRF451 Frederick Components Power MOSFET Selection Guide Scan
IRF451 General Electric Power Transistor Data Book 1985 Scan
IRF451 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. Scan
IRF451 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF451 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan
IRF451 International Rectifier N-Channel Power MOSFETs Scan
IRF451 International Rectifier TO-3 N-Channel HEXFETs Scan
IRF451 IXYS High Voltage Power MOSFETs Scan
IRF451 IXYS HIGH VOLTAGE POWER MOSFET DIE Scan
IRF451 IXYS High Voltage Power MOSFETs Scan
IRF451 Motorola Switchmode Datasheet Scan
IRF451 Motorola European Master Selection Guide 1986 Scan
IRF451 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan
IRF451 N/A Shortform Datasheet & Cross References Data Scan
IRF451 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF451 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRF451 N/A Semiconductor Master Cross Reference Guide Scan
IRF451 N/A FET Data Book Scan
Showing first 20 results.

IRf451

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: S E M I C O N D U C T O R IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and , Components to PC Boards" Symbol Ordering Information D PART NUMBER IRF450 IRF451 IRF452 IRF453 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF450 IRF451 IRF452 IRF453 S G NOTE: When , IRF450, IRF451, IRF452, IRF453 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF450 , IRF451 450 450 13 8.1 52 ±20 125 1.2 860 -55 to 150 300 260 IRF452 500 500 11 7.2 44 ±20 125 1.2 860 -55 Harris Semiconductor
Original
TA17435 TB334
Abstract: IRF451 IRF452 IRF453 HEXFET TRANSISTORS N-CHANNEL 500 Volt, 0.40 Ohm HEXFET TO-204AA (TO , fast switching, ease of paralleling and temperature stability of the electrical parameters. IRF451 , -1 7 5 IRF450, IRF451, IRF452, IRF453 Devices 11E D | 4Ã"SSMS2 G O O im a | INTERNATIONAL R E C TIFIE R T-39-13 Absolute Maximum Ratings IRF450, IRF451 IRF452, IRF453 Units , 260(iA - S (0) - 0.35 0.40 IRF452 IRF453 - 0.40 0.50 IRF450 IRF451 -
OCR Scan
IRF45Q G-180 G-181 G-182
Abstract: iH A R R is S E U IC 0 N D U C T 0 R November 1997 IRF450, IRF451, IRF452, IRF453 11A and 13A , . Formerly developmental type TA17435. Symbol Ordering Information PART NUM BER IRF450 IRF451 IRF452 IRF453 PACKAGE TO -204AA TO -204AA TO -204AA TO-2Q4AA BRAND IRF450 IRF451 IRF452 IRF453 NOTE: W hen , tio n 1 9 9 7 ^ , File Number 1827.2 IRF450, IRF451,1RF452,1RF453 Absolute Maximum Ratings , 1.2 860 -55 to 150 300 260 IRF451 450 450 13 8.1 52 ±20 125 1.2 860 -55 to 150 300 260 IRF452 500 500 -
OCR Scan
diode F451 RF452
Abstract: Standard Power MOSFETs. File Number 1827 Power MOS Field-Effect Transistors IRF450, IRF451 , N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The IRF450, IRF451, IRF452 and IRF453 are n-channel , 92CS-3780I JEDEC TO-2Q4AA Absolute Maximum Ratings Parameter IRF450 IRF451 IRF452 IRF453 Units V0g Drain , ,6mm) from case for 10s) °C 3-129 Standard Power MOSFETs. IRF450, IRF451, IRF452, IRF453 , Conditions BVfcSS Dtain â'¢ Source Breakdown Voltage IRF450 IRF452 500 - - V VGS = OV l0 = 250(iA IRF451 -
OCR Scan
mosfet IRF450 IRF 450 MOSFET sim 300s
Abstract: h a f r r is November 1997 IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and , Components to PC Boards" Symboi Ordering Information PART NUMBER IRF450 IRF451 IRF452 IRF453 PACKAGE TO-204AA TO-204AA TO-204AA TO-2Q4AA BRAND IRF450 IRF451 IRF452 IRF453 NOTE: When ordering, include the , Corporation 1997 , O" I File Number 1827 2 IRF450, IRF451, ÌRF452, IRF453 Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified IRF450 IRF451 450 450 13 8.1 52 ±20 125 1.2 860 -55 to 150 -
OCR Scan
T0-204AA
Abstract: File Number 1827 Power MOS Field-Effect Transistors IRF450, IRF451, IRF452, IRF453 N-Channel , TERMINAL DIAGRAM The IRF450, IRF451, IRF452 and IRF453 are n-channel enhancement-mode silicon-gate power , -204AA Absolute Maximum Ratings Parameter IRF450 IRF451 IRF452 IRF453 Units Vos Drain â'¢ Source Voltage © 500 , I IRF450, IRF451, IRF452, IRF453 " â  Electrical Characteristics @Tc = 25°C (Unless Otherwise , IRF460 IRF452 500 - - V Vgs = ov lD = 250pA IRF451 IRF463 460 - - V VQsith) Gate Threshold Voltage -
OCR Scan
100-C IRF461 1F45 MOSFET IRF460 TQ-204AA
Abstract: IRF451. 2.0%. m Adc nAdc nAdc v GS(th| rDS(on) IRF450, IRF451 IRF452 *D(on) IRF450, IRF451 IRF452 9FS IRF450, IRF451 IRF452 2.0 4.0 Vdc Ohm - - 0.4 0.5 Ade - - 13 12 6.0 6.0 , MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF450 IRF451 IRF452 Part Number IRF450 IRF451 IRF452 V d SS 500 V 450 V 500 V rDS(on) 0.4 n 0.4 n 0.5 n >D 13 A 13 A 12 A N-CHANNEL ENHANCEMENT-MODE , ) Characteristic j Symbol j Min J M ax |~ Unit V|BR|DSS IRF451 IRF450, IRF452 'DSS *GSSF -
OCR Scan
IRF450 transistor mosfet 452
Abstract: 500V 0.5Q 12A IRF253 450V 0.50 12A MAXIMUM RATINGS Characteristic Symbol IRF450 IRF451 IRF452 IRF4S3 , Vgs=0V b=250/iA IRF451 IRF453 450 - - V Gate Threshold Voltage V(3S(lti) ALL 2.0 â'" 4.0 V , ) lofon) IRF450 IRF451 13 - - A VDS>lD(on)XRDS|on) max., Vqs=10V IRF452 IRF453 12 - - A Static Drain-Source On-State Resistance (2) RDS(on) IRF450 IRF451 - 0.38 0.4 Q Vgs=10V, Id=7.0A IRF452 IRF453 - 0.4 , Conditions Continuous Source Current (Body Diode) Is IRF450 IRF451 - - 13 A IRF452 IRF453 - - 12 A -
OCR Scan
IRF250 IRF251 IRF252 th414 b250 rectifier hd250 0D0S14M IRF450/451/452/453 D05144
Abstract: 3.0 2.5 40 IRF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF451 450 0.5 12.0 150 IRF453 450 , 120 0.25 12.0 100 VN1201A *200"C Rating 1-4 Siliconix IRF450 â  IRF451 â  IRF452 â  IRF453 , "dsion) Id Package IRF450 500V 0.4Q 13A IRF451 450V TO-3 IRF452 500V 0.5Q 12A IRF453 450V s , .500V IRF451 .450V IRF452 , IRF451 -
OCR Scan
IRF840 IRF440 VNP002A IRF820 IRF350 IRF740 Siliconix Selector Guide IRF340 VN5001D/IRF830 VN5001A/IRF430
Abstract: 500 3.0 2.5 40 IRF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF451 450 0.5 12.0 150 IRF453 , 120 0.25 12.0 100 VN1201A *200"C Rating 1-4 Siliconix IRF450 â  IRF451 â  IRF452 â  IRF453 , "dsion) Id Package IRF450 500V 0.4Q 13A IRF451 450V TO-3 IRF452 500V 0.5Q 12A IRF453 450V s , .500V IRF451 .450V IRF452 , IRF451 -
OCR Scan
IRF442 VN5001A IRF430 VN5002A IRF432 IRF441
Abstract: 3.0 2.5 40 IRF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF451 450 0.5 12.0 150 IRF453 450 , 120 0.25 12.0 100 VN1201A *200"C Rating 1-4 Siliconix IRF450 â  IRF451 â  IRF452 â  IRF453 , "dsion) Id Package IRF450 500V 0.4Q 13A IRF451 450V TO-3 IRF452 500V 0.5Q 12A IRF453 450V s , .500V IRF451 .450V IRF452 , IRF451 -
OCR Scan
IRF522 VN1000A IRF540 IRF632 IRF640 IRF240 IRF450 equivalent buz 350 equivalent sony 2sj54 2SJ54 sony VN0108N2 2sk173 VN1000D
Abstract: .Ó 52 13 8.0 52 ± 1 .5 150 1.2 - 5 5 to 150 300 IRF450 500 500 · IRF451 450 450 ±20 12 7.0 48 12 7.0 48 , unless otherwise .specified) Typ Drain-Source Breakdown Voltage BVdss IRF450 500 IRF452 IRF451 , On-State Drain-Source Current (2) lofon) IRF450 13 IRF451 IRF452 12 IRF453 IRF450 IRF451 IRF452 , Current (Body Diode) Symbol Type Min IRF450 IRF451 IRF452 IRF453 - IRF450 IRF451 Typ Max Units 13 12 52 , Diode Forward Voltage (2) V sd IRF452 IRF4.53 IRF450 IRF451 IRF452 IRF453 - Reverse Recovery -
OCR Scan
LTI 222 diode irf4 00GS435
Abstract: Æ 7 S G S -T H O M S O N " /# , M M o)IÜ IigïO M ïffl(S § IRF 450 - 451 IRF 452 - 453 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF450 IRF451 IRF452 IRF453 V DSS ^ D , IRF451/IRF453 VGS= 0 500 450 Tc = 125°C 250 1000 ±100 V V nA mA nA Id s s lGSS VDS= Max Rating , ^ G S for IRF450/IRF451 for IRF452/IRF453 R OS (on) 13 11 lD= 7.2 A 0.4 0.5 Static drain-source on resistance v GS= 10 V for IRF450/IRF451 for IRF452/IRF453 fi fi DYNAMIC gfs * Ciss -
OCR Scan
irf 44 n irf 44 ns IRF 450 irf 451 IRF P channel irf transistors T0350W
Abstract: G J M .7 TM SGS-THOMSON LKêTÏÏM M ÊS IRF 450 - 451 IRF 452 - 453 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF450 IRF451 IRF452 IRF453 V DSS R DS(on) 500 V 450 V 500 V , ) I q - 250 for IRF450/IRF452 for IRF451/IRF453 Vq s -0 500 450 v v 250 1000 ±100 tass , fiA 2 13 11 4 V A A V DS> *D (on) x R DS(on) max V G S = 1 ^ V for IRF450/IRF451 for IRF452/IRF453 R DS (on) Static drain-source on resistance VGS= 10 V for IRF450/IRF451 for IRF452 -
OCR Scan
CURRENT-11A UPT0350W
Abstract: S-THOMSÔN TYPE IRF450 IRF451 IRF452 IRF453 VDSS 500 V 450 V 500 V 450 V · HIGH VOLTAGE - 450V FOR , ) Gate-body leakage current (VDS = 0) lp - 250 jtiA for IRF450/IRF452 for IRF451/IRF453 V qq- 0 500 , 250 yA 2 13 11 4 V A A b(on) V DS > for IRF450/IRF451 for IRF452/IRF453 R d s (on , VGS= 10 V for IRF450/IRF451 for IRF452/IRF453 lD= 7.2 A 0.4 0.5 n Q DYNAMIC gfs * Ciss Coss -
OCR Scan
350w schematic diagram motor control SC-02
Abstract: IRF450 IRF451 IRF452 IRF453 IRF510 IRF511 IRF512 IRF513 IRF520 IRF520FI IRF520P IRF521 IRF521FI IRF521P , IRF350 IRF350 IRF350 IRF350 SGSP579 SGSP579 SGSP579 SGSP579 IRF450 IRF451 IRF452 IRF453 IRF510 IRF511 , MTH40N06 MTH40N06FI MTH40N06FI SGSP574 SGSP579 SGSP575 SGSP575 SGSP577 SGSP577 IRF350 IRF350 IRF451 IRF450 , S G S -TH O M S O N S G S -TH O M S O N N E A R E S T IRF451 SGSP577 SGSP577 IRF142 IRF142 IRF141 , SGSP592 SGSP591 SGSP577 SGSP577 SGSP579 SGSP579 SGSP577 SGSP577 IRF451 IRF542 IRF543 IRF543 IRF540 IRF540 -
OCR Scan
2SK350 IRF722FI IRF540FI SGSP381 BUZ71 SGSP3055 IRF722P IRF732P IRF730P SGSP312 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312
Abstract: ber IRFP450/IRF450 IRFP451 /IRF451 IRFP452/IRF452 IRFP453/IRF453 Vos 500V 450V 500V 450V RüS(on , Voltage (1) Drain-Gate Voltage (R g s = 1 Symbol V dss IRFP450 IRF450 5 00 5 00 IRFP4S1 IRF451 , Symbol Characteristic Drain-Source Breakdown Voltage IR FP 450/452/IR F450/452 IRFP451 /453/IRF451 /4 5 3 -
OCR Scan
IRF450/451 451 MOSFET tr irfp450 ir 451 irfp450 mosfet irfp450 ir irf450 switching IRFP450/451/452/453 IRFP452 IRFP453
Abstract: IRF352 IRF353 IRF440 IRF441 IRF442 IRF443 IRF450 IRF451 IRF452 IRF453 IRF510 IRF511 IRF512 IRF513 IRF520 , SGSP579 SGSP579 SGSP579 IRF450 IRF451 IRF452 IRF453 IRF510 IRF511 IRF512 IRF513 IRF520 IRF520FI IRF520FI , SGSP574 SGSP579 SGSP575 SGSP575 SG SP577 SG SP577 IRF350 IRF350 IRF451 IRF450 IRF142 IRF142 IRF141 IRF141 , SGSP301 SGSP302 SG S P 311 SGSP312 SGS-THOMSON SGS-THOMSON NEAREST IRF451 SGSP577 SGSP577 IRF142 , SGSP577 SGSP579 SGSP579 SG SP577 SGSP577 IRF451 IRF542 IRF543 IRF543 IRF540 IRF540 SGSP201 SGSP201 -
OCR Scan
TP3055A TP8N10 th15n20 TH7N50 TP10N05 TP4N10 IRFP350FI 2SK313 2SK319 2SK320 2SK324 2SK345 2SK346
Abstract: paralleling maximum ratings (Tq = 25° C) (unless otherwise specified) RATING SYMBOL IRF450/D86FR2 IRF451 , Drain-Source Breakdown Voltage IRF450/D86FR2 (VQS = 0V, lD = 250 fiA) IRF451/D86FR1 bvdss 500 450 â'" â'" Volts -
OCR Scan
IRF451/D86FR1
Abstract: 25 V, starting T j * +25°C, L - 9.2mHt RGS = 250, IpEAK " 13A5ee Figure 15. IRF451 IRF451R 450 450 , Drain-Source Breakdown Voltage IR F450/452, IRF450R/452R IRF451 /453, IRF451R/453R Gate Threshold Voltage , (FLANGE) GATE · High Input Impedance D escription The IRF450, IRF451, IRF452, and IRF453 are n-channel enhancement-mode silicon-gate power field-effect transis tors. IRF450R, IRF451R, IRF452R and -
OCR Scan
F450 RF-45 IRF453R
Abstract: . 40 6.0 3000 350* 75* TO-3 IRF451 ±100 IRF452 ±20 150 ±100 0.25 0. 50 7. 2 3000 350 , 1. 1 7 TO-3 1RF450 SAMSUNG N 500 0.4 13 TO-3 IRF451 SAMSUNG N 450 , 3000 600 200 25 TO-204AA IRF451 SILICONIX N 450 ±20 13 150 ±100 ±20 250 450 2.0 4.0 0.1 10 7.0 13 -
OCR Scan
IRF360 IRF421 IRF433 IRF448 IRF449 irf413 irf362 IRF362 TQ-204AE
Showing first 20 results.