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IRLZ44NSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRLZ44NPBF Infineon Technologies AG Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 visit Digikey Buy
IRLZ44NSPBF Infineon Technologies AG Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy

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Part : IRLZ44NPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 9,944 Best Price : £0.3040 Price Each : £0.7240
Part : IRLZ44NSPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 544 Best Price : £0.5290 Price Each : £1.23
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Part : IRLZ44NPBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 4,600 Best Price : $0.57 Price Each : $0.65
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IRLZ44N Datasheet

Part Manufacturer Description PDF Type
IRLZ44N International Rectifier HEXFET Power MOSFET Original
IRLZ44N International Rectifier HEXFET Power MOSFET Original
IRLZ44N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original
IRLZ44N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRLZ44N with Standard Packaging Original
IRLZ44N Toshiba Power MOSFETs Cross Reference Guide Original
IRLZ44N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 55V, 41A, Pkg Style TO-220AB Scan
IRLZ44N N/A Metal oxide N-channel FET, Enhancement Type Scan
IRLZ44NL International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRLZ44NL with Standard Packaging Original
IRLZ44NL International Rectifier HEXFET Power MOSFET Original
IRLZ44NL Toshiba Power MOSFETs Cross Reference Guide Original
IRLZ44NLPBF International Rectifier Original
IRLZ44NLPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRLZ44NL with Lead Free Packaging Original
IRLZ44NPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRLZ44NPBF with Standard Packaging Original
IRLZ44NPBF International Rectifier 55V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220AB package Original
IRLZ44NS International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRLZ44NS with Standard Packaging Original
IRLZ44NS International Rectifier HEXFET Power MOSFET Original
IRLZ44NS Toshiba Power MOSFETs Cross Reference Guide Original
IRLZ44NS International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier Scan
IRLZ44NSPBF International Rectifier Original
IRLZ44NSPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRLZ44NS with Lead Free Packaging Original
Showing first 20 results.

IRLZ44N

Catalog Datasheet MFG & Type PDF Document Tags

IRLZ44N

Abstract: Previous Datasheet Index Next Data Sheet PD - 9.1346A IRLZ44N PRELIMINARY HEXFET , /6/96 Previous Datasheet Index Next Data Sheet IRLZ44N Electrical Characteristics @ TJ , Order Revision Date 4/30/96 Previous Datasheet Index Next Data Sheet IRLZ44N 1000 , Datasheet Index Next Data Sheet IRLZ44N 2400 C , C a p a cita n ce (p F ) C is s V GS , To Order 100 Previous Datasheet Index Next Data Sheet IRLZ44N 50 RD VDS VGS
International Rectifier
Original

IRLZ44N

Abstract: 7A25A PD - 9.1346B IRLZ44N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced , IRLZ44N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS/TJ Parameter , ) Pulse width 300µs; duty cycle 2%. TJ 175°C D S IRLZ44N 1000 1000 VGS 15V 12V , ) Fig 4. Normalized On-Resistance Vs. Temperature IRLZ44N 2400 C , C a p a cita n ce (p F , Safe Operating Area 100 IRLZ44N 50 RD VDS VGS I D , Drain Current (A) 40 D.U.T
International Rectifier
Original
7A25A

IRLZ44N

Abstract: PD - 9.1346A IRLZ44N PRELIMINARY HEXFET® Power MOSFET l l l l l l Logic-Level , ­­­­ 1.8 ­­­­ 62 °C/W 11/6/96 IRLZ44N Electrical Characteristics @ TJ = 25°C (unless , ) Pulse width 300µs; duty cycle 2%. TJ 175°C Revision Date 4/30/96 IRLZ44N 1000 1000 , , Junction T em perature (°C ) Fig 4. Normalized On-Resistance Vs. Temperature IRLZ44N 2400 C , . Maximum Safe Operating Area 100 IRLZ44N 50 RD VDS VGS ID , D ra in C u rre n t (A m p s
International Rectifier
Original
Abstract: IRLZ44N H EXFET® Power M O S F E T Description Fifth Generation HEXFET® Power MOSFETs )from , Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient C -7 0 5 IRLZ44N Electrical , Rectifier 1000 IRLZ44N b · Drain-to-Source Current (A) 1 10 100 VDS , Drain-to-Source , . Normalized On-Resistance Vs. Temperature C -7 0 7 IRLZ44N International IGR Rectifier 1 10 , International IQR Rectifier IRLZ44N LU O c a > w k _ D c Q Q 2 c < X > o c jCO to > JZ -
OCR Scan

data IRLZ44N

Abstract: IRLZ44N International TOR Rectifier PD - 9.1346B IRLZ44N HEXFET® Power MOSFET â'¢ Logic-Level Gate , 0.50 ReJA Junction-to-Ambient 62 8/25/97 IRLZ44N International _IQR Rectifier Electrical , ., IAS = 25A. (See Figure 12) International IOR Rectifier IRLZ44N 0.1 1 10 100 VDS , Drain-to-Source , . Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLZ44N International , . Maximum Safe Operating Area International IOR Rectifier IRLZ44N Fig 9. Maximum Drain Current Vs. Case
-
OCR Scan
IRF1010 ISR9246 data IRLZ44N IQR 2400 022CI
Abstract: PD - 9.1346B IRLZ44N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive , IRLZ44N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) âV(BR)DSS/âTJ , ‰¤ 300µs; duty cycle ≤ 2%. TJ ≤ 175°C D S IRLZ44N 1000 1000 VGS 15V 12V 10V , . Normalized On-Resistance Vs. Temperature IRLZ44N 2400 C , C a p a cita n ce (p F ) C is s V , . Maximum Safe Operating Area 100 IRLZ44N 50 RD VDS VGS I D , Drain Current (A) 40 International Rectifier
Original

IRLZ44N

Abstract: PD - 9.1346B IRLZ44N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced , IRLZ44N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS/TJ Parameter , ) Pulse width 300µs; duty cycle 2%. TJ 175°C D S IRLZ44N 1000 1000 VGS 15V 12V , ) Fig 4. Normalized On-Resistance Vs. Temperature IRLZ44N 2400 C , C a p a cita n ce (p F , Safe Operating Area 100 IRLZ44N 50 RD VDS VGS I D , Drain Current (A) 40 D.U.T
International Rectifier
Original

12 volt audio amplifier class D schematic

Abstract: high power fet audio amplifier schematic POS_LO_DRIVE R18 10.0 R34 6.8 +5V_REG Q8 C26 3300pF IRLZ44N C18 0.10uF R19 49.9 R20 , Q18 IRLZ44N C21 0.10uF R30 49.9 R31 Q19 Q20 BSS138 BSS138 10.0 LINFINITY , Transistor, FET, BSS138 SOT23 General Purpose N Channel Transistor, FET, IRLZ44N TO220 Power N Channel
Microsemi
Original
12 volt audio amplifier class D schematic high power fet audio amplifier schematic TRANSISTOR SMD p1 3 volt audio amplifier class D schematic 1 watt diode zener 200 watt audio amplifier ic LXE1711-100 LX1711-100

high power fet audio amplifier schematic

Abstract: 12 volt audio amplifier class D schematic POS_LO_DRIVE R18 10.0 R34 6.8 +5V_REG Q8 C26 3300pF IRLZ44N C18 0.10uF R19 49.9 R20 , 10.0 5.6 1W NEG_LO_DRIVE R29 10.0 R37 6.8 +5V_REG C28 3300pF Q18 IRLZ44N , , BSS138 SOT23 General Purpose N Channel Transistor, FET, IRLZ44N TO220 Power N Channel Diode, Zener
Microsemi
Original
150W TRANSISTOR AUDIO AMPLIFIER IRF5305 Speaker 80W LXE1711 SMD TRANSISTOR fet smd transistor p5 AN-16

IRF3205 equivalent

Abstract: IRF 9732 82 IRLZ44N 9733 100 50 IRF3205 9733 100 85 IRF3710 9645 100 99 IRF4905 9718 100 85 , IRFZ44N 9729 170 1000 0 0 0 IRLZ44N 9733 85 1000 0 0 0 IRFZ46N 9750 340 1000 0 0 0 , IRF6215S IRF6215S IRFZ44N IRLZ44N IRF6215 IRF9Z34 IRF730 IRF840 IRF840 IRF540 IRL3803 IRL3803 , IRFZ44N 9729 170 96 0 IRFZ44N 9733 85 96 0 IRLZ44N 9733 85 96 0 IRFZ46N 9721 20 96 0 , 0.034 34 IRLZ24N 9733 175 50 1000 0 2.7E+07 0.034 34 IRLZ44N 9733 175 50 1000 0 2.7E+07
International Rectifier
Original
IRF3205 equivalent IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent IRF9630 IRF9510L IRF9520 IRF9510 IRF9Z14 IRF9Z24

1RL540N

Abstract: RL3103 International Iö R Rectifier HEXFE1® Power MOSFETs d *D V(BR)DSS Continuous R© Pd Drain-to-Source ^DS(on) Continuous Drain Current On-State Drain Current Max. Thermal Max. Power Breakdown 100° Resistance Part VoHage Resistance Dissipation 2S°C r c /w ) {wj (A) Number (V) (A) Fax on Case Demand Outline Number K«y Through-Hole Packages N-Channel IRL3302 IRL3202 IR L 3I02 IRL3402 IRL3502 IRL2703 IRL3303 [RL3103 IRL2203N IRL3803 IRLZ24N IRLZ34N IRLZ44N IRL3705N [RL2505 IRL520N (RL530N 1RL540N [RL2910
-
OCR Scan

IRLZ44N equivalent

Abstract: IRLIZ44NPBF =60s, =60Hz Uses IRLZ44N data and test conditions D S IRLIZ44NPbF TO-220 Full-Pak Package Outline
International Rectifier
Original
IRLZ44N equivalent IRLIZ44NPBF IRLIZ44NP

1RFPC50

Abstract: 1RFPC50LC IRL3803 IRL3705N IRLZ14 IRLZ24N IRLZ34N IRLZ44N IRL510 IRL520 IRL530 IRL540 IRL620 IRL630 Logic Level
-
OCR Scan
IRF840LC 1RFPC50LC 1RFPC50 1RFPc IRFz44n IRF540n T0-220AB IRF740LC IRFBC40LC IRFZ34N IRF1010N

IRF4905 equivalent

Abstract: 800v irf 91344 IRFIZ34N 91489 IRLIZ34N 91329 IRFIZ44N 91403 IRLZ44N 91346 IRFZ46N 91277 IRFZ48N
International Rectifier
Original
IRFP064N IRFP448 IRFPS473LC 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent irf510 switch IRF1010E IRL3102 IRL3103 IRLI2203N IRLI3803 IRF1104 IRL1004

gs 069

Abstract: IRLZ44N PD - 95156 IRLZ44NS/LPbF Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully , can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ44NL , Junction-to-Ambient ( PCB Mounted,steady-state)* Typ. Max. Units 1.4 40 °C/W IRLZ44NS/LPbF , ) TJ 175°C Uses IRLZ44N data and test conditions * When mounted on 1" square PCB ( FR-4 or G
International Rectifier
Original
gs 069 AN-994 IRLZ44NS/LP EIA-418
Abstract: " Pulse width ≤ 300µs; duty cycle ≤ 2%.  t=60s, ƒ=60Hz  Uses IRLZ44N data and test conditions International Rectifier
Original

irf1010e equivalent

Abstract: irfp250n equivalent IRL3705N* 55 0.0100 77.00 130.00 IRFP250N 200 0.0750 30.00 214.00 IRFU320 400 1.8000 3.10 42.00 IRLZ44N
Allied Electronics Catalog
Original
irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF730A equivalent IRF9540N equivalent IRFZ24N IRFIZ24N IRFD024 IRFI1310N IRFD014 IRFZ44E

C-671

Abstract: IR*2905 is measured between lead and center of die contact ® Uses IRLZ44N data and test conditions. * When
-
OCR Scan
C-671 IR*2905 IRLZ44 irlr2905 IRLR2905 IRLU2905 1334B IRLR/U2905 C-674

IRLZ44N

Abstract: =60s, =60Hz Uses IRLZ44N data and test conditions D S IRLIZ44NPbF 1000 1000 VGS 15V 12V
International Rectifier
Original

IRLZ44N equivalent

Abstract: IRLZ44N =60s, =60Hz Uses IRLZ44N data and test conditions D S IRLIZ44NPbF 1000 1000 VGS 15V 12V
International Rectifier
Original
isd 1700

IRF5905

Abstract: MOSFET IRF 9732 Data IRLZ44 IRLZ44N IRLZ44NS IRLZ44S 3.3.1.2 3.3.1.6 3.3.1.6 3.3.1.2 Cycling Data 3.3.2.1 3.3.2.2
International Rectifier
Original
IRF5905 MOSFET IRF 9732 IRF3205 application irf2807 equivalent HTGB IRD110

LS8297 LS8297CT

Abstract: , Q4 are MOSFET Power Transistors suitable for 5V Gate Drive Typical P/Ns = IRLZ44N and IRF3708
LSI Computer Systems
Original
LS8297 LS8297CT LS8297 LS8297CT A3800 74HC08
Abstract: NOTE: Q1, Q2, Q3, Q4 are MOSFET Power Transistors suitable for 5V Gate Drive Typical P/Ns = IRLZ44N LSI Computer Systems
Original
LS7290 LS7290-S LS7290-TS CD4001 CD4071 74HC04
Abstract: )DSS, TJ & 175°C Â" Pulse width &%300µs; duty cycle%& 2%.  Uses IRLZ44N data and test International Rectifier
Original
Showing first 20 results.