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ISL28113SOT23EVAL1Z Intersil Corporation Single General Purpose Micropower, RRIO Operational Amplifier; Package: Eval Board visit Intersil
ISL28114SOT23EVAL1Z Intersil Corporation Single General Purpose Micropower, RRIO Operational Amplifiers; Package: Eval Board visit Intersil
EL5144CW Intersil Corporation VIDEO AMPLIFIER, PDSO5, SOT-23, 5 PIN visit Intersil
EL5192CW-T7 Intersil Corporation VIDEO AMPLIFIER, PDSO5, SOT-23, 5 PIN visit Intersil

IRLML6401 SOT-23

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MOSFET SMD Type HEXFET Power MOSFET IRLML6401 SOT-23 â  Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Ultra low on-resistance. 1 0.55 ● Fast switching. +0.1 1.3-0.1 +0.1 2.4-0.1 ● P-Channel MOSFET. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain , .copper FR4 board,steady state. www.kexin.com.cn 1 MOSFET SMD Type IRLML6401 â  Electrical Kexin
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IRLML6401

Abstract: marking bad sot-23 . Typical On-Resistance Vs. Drain Current 6 www.irf.com IRLML6401 Package Outline SOT-23 Outline , www.irf.com 7 IRLML6401 Tape & Reel Information SOT-23 Dimensions are shown in millimeters (inches , PD- 93756 IRLML6401 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile ( , standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This
International Rectifier
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marking bad sot-23 marking 43A sot23

IRLML6401 SOT-23

Abstract: marking SH SOT23 mosfet PD- 93756B IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 , has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the , IRLML6401 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , steady state. RG = 25, IAS = -4.3A. 2 www.irf.com IRLML6401 100 100 VGS -7.0V -5.0V , ) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLML6401 10 VGS = 0V, f = 1 MHZ Ciss =
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EIA-541 IRLML6401 SOT-23 marking SH SOT23 mosfet EIA-481

marking code IRLML6401

Abstract: IRLML6401 PD - 93756D IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 , has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the , IRLML6401 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , steady state. RG = 25, IAS = -4.3A. 2 www.irf.com IRLML6401 100 100 VGS -7.0V -5.0V , . Normalized On-Resistance Vs. Temperature 3 IRLML6401 10 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs
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IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 marking code IRLML6401 IRLML2502
Abstract: P D -93756 International 3BR Rectifier IRLML6401 HEXFET® Power MOSFET â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Ultra Low O n-R esistance P-Channel M O SFET SO T-23 Footprint Low Profile ( , large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power , 100 °c/w 1 9/1/99 IRLML6401 In te rn a tio n a l IQ R R e c tifie r Electrical , j = 2 5 ° C, L = 1.9mH Rg = 25Q, lAS = -4.3A. 2 w w w .irf.com IRLML6401 International -
OCR Scan
Abstract: PD - 93756E IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 , Temperature 6 www.irf.com IRLML6401 Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are , leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the , 100 °C/W 1 03/16/11 IRLML6401 Electrical Characteristics @ TJ = 25°C (unless otherwise , 2 www.irf.com IRLML6401 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V -1.5V BOTTOM International Rectifier
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ml2803

Abstract: Y1 SOT-23 PD- 93756C IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 , has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the , IRLML6401 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , steady state. RG = 25, IAS = -4.3A. 2 www.irf.com IRLML6401 100 100 VGS -7.0V -5.0V , ) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLML6401 10 VGS = 0V, f = 1 MHZ Ciss =
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ml2803 Y1 SOT-23 43a sot23 ML2803 IRLML5203

sot-23 marking code pe

Abstract: IRLML6401 SOT-23 IRLML2402 Package Outline HEXFET MICRO3 (SOT-23) Outline Dimensions are shown in millimeters , . Part Marking Information HEXFET MICRO3 (SOT-23) E X A M P L E : T H IS IS A N IR L M L 6 30 2 , IRLML2402 Tape & Reel Information HEXFET MICRO3 (SOT-23) Dimensions are shown in millimeters (inches) 2 , subject to change without notice. 8/97 Micro3 (SOT-23 / TO-236AB) Notes: T his part marking , IRLML6402 IRLML6401 IRLML2502 IRLML5203 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000
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sot-23 marking code pe MARKING tAN SOT-23 gi 9532 MARKING EK SOT-23 N D E Z sot23 marking code IRLML2502

irlml2803 B

Abstract: IRLML6401 Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile ( , incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest , * IRLML2803 Package Outline SOT-23 Outline Dimensions are shown in millimeters (inches) D -B- LEAD , Marking Information SOT-23 Notes : T his part marking information applies to devices produced before , = 1H = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203
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irlml2803 B 9532 mosfet IRLML2502 G irlml5103 1D IRLML5203 H marking 1F SOT-23 91258D

IRLML6401 SOT-23

Abstract: j y w sot23 Micro3 (SOT-23 / TO-236AB) W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR PART NUMBER Y = YEAR YEAR Y WORK WEEK W LOT CODE PART NUMBER CODE REFERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LETTER YEAR WORK WEEK W 2001 2002 2003 1994 1995 1996
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OCR Scan
j y w sot23 h d 2001 Micro3 IRL*5103 IRLML6402 micro3

IRLML5203 IR

Abstract: IRLML2402 Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile ( , incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest , Typ. -0.029 3.4 0.52 1.1 10 8.2 23 16 75 37 18 Max. Units Conditions , . For P-Channel HEXFETS [ISD] IRLML5103 Package Outline SOT-23 Outline Dimensions are shown in , ( .037 ) 2X IRLML5103 Part Marking Information SOT-23 Notes : T his part marking information
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IRLML5203 IR 91260E
Abstract: PD - 93757C IRLML2502 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile ( , incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest , IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 Y 2001 2002 2003 1994 1995 1996 , IRLML6402 IRLML6401 IRLML2502 IRLML5203 YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 International Rectifier
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IRLML6402

Abstract: AN-994 PD - 93755B IRLML6402 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile ( , into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest , 1F = 1G = 1H = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 , IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 YEAR Y 2001
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AN-994 application IRLML2502

marking code IRLML2502

Abstract: irlml PD - 93757C IRLML2502 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile ( , into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest , = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 Y , IRLML 2402 IRLML2803 IRLML 6302 IRLML 5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 YEAR Y
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irlml for IRLML2502

IRLML6404

Abstract: IRLML6403 PD - 95828 IRLC6401B HEXFET® l l D 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film Power MOSFET Die in Wafer Form G Key Electrical Characteristics (SOT-23 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown , results, die attach temperature should not exceed 300 °C IRLML6401 NOT ES : 1. ALL DIME NS IONS ARE S , IRF 5808 IRF 5816 IRLML2502 IRLML5203 IRLML6401 IRLML6402 IRLML6403 IRLML6404 IRLML6501 G 0.61
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irlml6402 equivalent

IRLML6302 marking

Abstract: marking code IRLML2502 Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile ( , incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest , [ISD] IRLML6302 Package Outline SOT-23 Outline Dimensions are shown in millimeters (inches) D , IRLML6302 Part Marking Information SOT-23 Notes : T his part marking information applies to devices , 1F = 1G = 1H = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502
International Rectifier
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IRLML6302 marking 91259E

irlml2502

Abstract: IRLML5103 Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile ( , incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest , 0.52 1.1 10 8.2 23 16 75 37 18 Max. Units Conditions V VGS = 0V, ID = -250µA V/°C , Package Outline SOT-23 Outline Dimensions are shown in millimeters (inches) D -B- LEAD , Marking Information SOT-23 Notes : T his part marking information applies to devices produced before
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IRLML5103 -30V

ML5203

Abstract: ML5103 application note #AN-994. 2 IRLML6402PbF Micro3 (SOT-23/TO-263AB) Package Outline Dimensions are , 0.95 [.0375] 0.802 [.031] 1.90 [.075] Micro3 (SOT-23/TO-236AB) Part Marking Information W , ML6302 IRL ML5103 IRLML6402 IRLML6401 IRLML2502 IRL ML5203 YEAR Y 2001 2002 2003 1994 , 28 29 30 A B C D 50 51 52 X Y Z 7 IRLML6402PbF Micro3TM(SOT-23/TO
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sot23-5 code BBB SOT-23 marking code BS marking BS SOT-23 marking code pe sot-23 MOSFET IRL IRLML6402PBF IRLML6402P O-236AB

diode marking 355 SOT23

Abstract: IRLML2402 Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile ( , has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the , 3.4 0.52 1.1 10 8.2 23 16 75 37 18 Max. Units Conditions V VGS = 0V, ID = -250µA V , IRLML5103PbF Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) S Y M B O L , ] Micro3 (SOT-23/TO-236AB) Part Marking Information W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
International Rectifier
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diode marking 355 SOT23 A2 SOT-23 mosfet IRLML5103PbF IRLML5103P

IRLML2402

Abstract: IRLML2803 = 3.5mH RG = 25, IAS = -4.3A. 2 IRLML6401PbF Micro3 (SOT-23) Package Outline Dimensions , LINE T O-236AB. 0.95 [.0375] 3X 0.802 [.031] 1.90 [.075] Micro3 (SOT-23/TO , = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 YEAR Y 2001
International Rectifier
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43A MARKING CODE IRLML6401P
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